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EP0296015B1 - Power line impedance testing appliance, and its use in a pyrotecnical device firing test - Google Patents

Power line impedance testing appliance, and its use in a pyrotecnical device firing test Download PDF

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Publication number
EP0296015B1
EP0296015B1 EP19880401366 EP88401366A EP0296015B1 EP 0296015 B1 EP0296015 B1 EP 0296015B1 EP 19880401366 EP19880401366 EP 19880401366 EP 88401366 A EP88401366 A EP 88401366A EP 0296015 B1 EP0296015 B1 EP 0296015B1
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Prior art keywords
current
circuit
test
power line
power
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EP19880401366
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German (de)
French (fr)
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EP0296015A1 (en
Inventor
Jean-Jacques Maurice Derksema
Pierre Fernand Coutin
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R Alkan et Cie
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R Alkan et Cie
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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F42AMMUNITION; BLASTING
    • F42DBLASTING
    • F42D1/00Blasting methods or apparatus, e.g. loading or tamping
    • F42D1/04Arrangements for ignition
    • F42D1/045Arrangements for electric ignition
    • F42D1/05Electric circuits for blasting
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F42AMMUNITION; BLASTING
    • F42CAMMUNITION FUZES; ARMING OR SAFETY MEANS THEREFOR
    • F42C21/00Checking fuzes; Testing fuzes

Definitions

  • the invention relates to a device for testing the impedance of a power line and its application to testing primers of pyrotechnic means with electric ignition.
  • this defect can have serious consequences and it is advisable to ensure beforehand that the impedance of the power line does not exceed a predetermined value and, correlatively, that its electrical continuity is well ensured.
  • EP-A-0061 860 describes an apparatus and a method for testing a detonating module, the firing of which is ensured by supplying it with an alternating current of given intensity via a transformer.
  • the test current must also be alternating and of sufficient intensity to allow precise measurement of the impedance of the detonating module.
  • a test under an alternating current of given frequency and constant amplitude would require an electrical power source of excessive capacity and size for a device supposed to be portable.
  • the apparatus therefore includes a capacitor which, when testing a detonating module, is preloaded to a predetermined voltage. The discharge of the capacitor generates between the terminals of the transformer primary a voltage peak which is representative of the impedance of the detonating module.
  • Such a primer comprises in known manner the assembly of an electrical charge, that is to say a heating resistor, and a small pyrotechnic pellet capable of detonating in the event of sufficient heating. It is noted that excessive heating, but less than the minimum heating causing the detonation, can gradually create a kind of chemical fatigue of the pellet, which then introduces drifts of its detonation characteristics relative to those it initially had. Such deterioration is hereinafter called "phlegmatization”.
  • French patent application FR-A-2 611 883 filed on March 4, 1987 by the Applicant and published after the priority date of this application, describes a device and a method for the selective firing of cartridges for aircraft or other apparatus.
  • This device includes modular chargers each containing several cartridges and electronic circuits ensuring the management of cartridge loading and the selective distribution of firing orders to the primers of the different cartridges.
  • these circuits construct firing tables containing only the addresses of the cartridges whose firing line comprising a power stage and a primer is correct. Each line of fire must therefore have been tested during the initialization of the device and / or prior to the firing order of the cartridge.
  • FIG. 1 shows a simplified electrical circuit of the prior art forming part of the general knowledge of those skilled in the art, comprising a primer symbolized by a load resistor Rc, a power stage T2 consisting of two transistors mounted in Darlington circuit between a current supply source SC and the load Rc, and a switching transistor T1 allowing the selection of the firing line from the electronic circuits of the aforementioned selective firing device.
  • the base of transistor T1 is attacked via a resistor Rb1, its emitter is connected to ground via a resistor Re and its collector is connected to the base of the Darlington circuit T2 via of a resistance Rb2.
  • the impedance of the firing line can be determined by measuring the voltage Vm at its terminals when a direct test current Im is injected into it by the current source SC.
  • Vm 2Vbe + Vcel + Rb2Ib2 + ReIe (input circuit) with, Im being the intensity at the source SC:
  • Im ( ⁇ T2 + 1)
  • ⁇ T2 being the current gain of the Darlington circuit.
  • Vm (input) 2Vbe + Vce1sat + Rb2Ib2 + Re (Ib1 + Ib2)
  • Rcc being the value of the load resistance which, for a given current Ic, brings the transistor T2 to saturation.
  • the minimum current which must pass through a primer of the aforementioned type to ensure its ignition is 3A. If the available electrical voltage is 24V, we note that a firing channel can only be declared operational if the value of the firing line impedance is at most equal to 8 ⁇ .
  • the invention aims to provide a device for testing a power line which overcomes this difficulty.
  • the power stage 10 in FIG. 2 is similar to that in FIG. 1. It includes a Darlington T2 circuit made up of two PNP transistors.
  • the emitter of T2 is connected to a current supply source SC and its base is connected to the collector of a switching transistor T1 via a resistor Rb2.
  • the emitter of transistor T1 is connected to ground via a resistor Re and its base is attacked by an addressing circuit (not shown) through a resistor Rb1.
  • the collector of T2 is connected to the electrical load Rc via a power diode D.
  • Vm (output) Vce2sat + VD + RccIc.
  • the saturation of the circuit T2 is reached for a lower value R′cc of the load Rc: the output voltage of the power stage then has the shape represented by the curve V ′ m in dashed lines.
  • the minimum value of the offset voltage VD was 0.1 V.
  • this value must be greater to ensure that the measurement under low direct current takes place in the linear variation zone of Vm as a function of Rc.
  • the offset voltage introduced by the dipole interposed in the collector circuit of T2 remains substantially unchanged when this line is crossed by the high nominal current (at least 3 amperes) intended to ensure the ignition of the primer Rc.
  • a power diode is particularly well suited, since it generates an offset voltage of the order of 0.6 to 0.8 V for currents ranging from a few tens of milliamps to several amps.
  • the invention is not limited to this type of component and any other electrical dipole capable of generating a substantially constant offset voltage of the desired order of magnitude would be perfectly suitable.
  • diode D could be connected, not between the circuit T2 and the load Rc, but between the load Rc and the ground.
  • This second configuration has the advantage of requiring only a single diode for testing a certain number of power lines in parallel, by means of a single test circuit 20 as shown in FIG. 4A.
  • diode Di associated with each load Rci if, for example, the overall configuration of the circuits does not make it possible to have a good common ground.
  • the diode Di can be connected between the power stage and the load as shown in FIG. 4B, or between the load and the ground.
  • this configuration can also be justified if the manufacturing technology used (hybrid circuits for example) allows the power stage 10i and the corresponding diode Di to be integrated into the same substrate.
  • FIGS. 4A and 4B differ only in the position and the number of diodes used, they will be the subject of a common description.
  • the test circuit 20 comprising the current source SC, is connected in parallel to all the stages of power 10 l ... 10i ... 10n which should be tested. It will be assumed below that the power stages 10i, the charges Rci and the diodes Di have the same intrinsic characteristics in each power line Ll .... Li .... Ln and that the same current is circulated there. continuous test Im.
  • the test circuit 20 has an input E for test control and an output S for reading the response to the test.
  • the blocks 21 and 22 shown for the record show respectively a circuit for generating the nominal direct current for supplying the loads Rci and an addressing circuit for the power stages 10 l ... 10i ... 10n .
  • the addressing circuit 22 selects the address of the input Ai of the power stage 10i which should be tested or supplied under the nominal current.
  • the test circuit 20 comprises the current source SC and a circuit for measuring the voltage Vm.
  • the test is triggered by applying an appropriate command to the input E and by selecting the address of the power stage forming part of the power line Ll .... Li .... Ln whose l should be measured. 'impedance. This is provided by measuring the voltage Vm between point P and ground.
  • the measured voltage Vm is compared with a predetermined threshold value and the result of this comparison may or may not validate the power line tested.
  • the circuits generating a threshold and comparison value can be part of the test circuit 20 or be external to it.
  • the output S then delivers a signal capable of taking one or the other of two logical states depending on the result of the comparison.
  • the variation of the saturation voltage of the power transistor (T2) Vce2sat is 15 ⁇ 5 mV for a variation ⁇ Im of 15 mA, in the temperature range between -55 and + 100 ° C.
  • the variation of the forward voltage of the ⁇ VD diode in the same conditions is 15 mV ⁇ 5 mV.
  • FIG. 5 shows a differential measurement test circuit applicable in particular to the test of cartridge primers in the context of the device which is the subject of the above-mentioned French patent application No. FR-A-2 611 883.
  • the test circuit 20 comprises at the input an optoelectronic isolation circuit 201 to which the test trigger commands are applied to its input E.
  • the output of the isolation circuit 201 attacks the trigger input of a first monostable circuit 202 having a time constant of 40 ⁇ s, an input of an AND gate 203 and the trigger input of a second monostable circuit 204 having a time constant of 65 ⁇ s.
  • the inverted output Q of the first monostable 202 attacks the second input of the AND gate 203 and its non-inverted output Q drives a first current source 205 generating a first direct measurement current of 35 mA, as well as an authorization input d '' an analog memory 206.
  • the output of the AND gate 203 controls a second current source 207 generating a second direct measurement current of 50 mA, as well as the authorization input of a measurement circuit 208.
  • the current sources 205 and 207 are connected in parallel to the different power stages of the lines to be tested (only one of which has been shown for the sake of simplicity) by means of a diode 214. Similarly, the generator circuit 21 shooting current is connected to these same power stages via a diode 215.
  • the diodes 214 and 215 together play the role of an OR gate.
  • the outputs of the analog memory 206 and of the measurement circuit 208 are applied to a measurement comparator 209 whose output is connected to a logic memory 210.
  • the clock input of the logic memory 210 is attacked by the output of a read circuit 211 itself controlled by the monostable circuit 204.
  • the result of the measurement present at the output Q of the logic memory 210 is transmitted to the output S of the test circuit 20 via an optoelectronic isolation circuit 212 and an adapter output circuit 213.
  • a test of the power line Li is triggered by selecting the input Ai of the power stage 10i and by applying a test command signal to the input E.
  • Cellui transmitted by the circuit d isolation 201 (photocoupler), causes the generation of a 40 ⁇ s pulse by the monostable circuit 202. This pulse controls the current source 205 which circulates a direct current of 35 mA in the power line Li. Simultaneously, this 40 ⁇ s pulse applied to analog memory 206 authorizes the latter to memorize the voltage developed at point P.
  • the Q output of the monostable circuit 202 changes to "0" and its Q output changes to "1".
  • the output of the AND gate 203 also changes to "1" and the current source 207 circulates a direct current of 50 mA in the power line Li.
  • the level "1" at the output of the AND gate 203 also allows the circuit 208 to measure the voltage at point P.
  • Comparator 209 compares to a predetermined threshold value the difference ⁇ Vm between the voltages generated at point P by the currents of 50 and 35 mA respectively or, which is equivalent, compares the output of the measuring circuit 208 at the sum of the threshold value and the memorized value present at the output of the analog memory 206.
  • ⁇ Vm is greater than the threshold value, that is to say if the impedance of the load Rci is greater than the predetermined admitted value, the output of the comparator takes the logic value "0". Otherwise, it takes the logical value "1". Alternatively, one can naturally adapt a reverse logic.
  • the monostable circuit 204 causes the emission of a pulse by the read circuit 211.
  • the logic state of the comparator 209 applied to the input D of the logic memory 20 is transferred to its output Q. This logic state is transmitted to the output S via the optoelectronic output circuit 212 and the adapter output circuit 213.
  • the output S of the test circuit 20 is in state “1" if the power line Li associated with the primer Rci is operational and in state "0" if the latter is defective.
  • the invention allows, with good precision, a low resistance measurement across a power stage, this by overcoming the dispersion (intrinsic and related to temperature) of the characteristics of the constituent components. the measurement line.
  • the measurement performed corresponds to the total impedance, line (L), transistor plus load (Rc). It would be possible, knowing the impedance of the line (cable L) without load and an approximate value of the dynamic impedances of the power transistor, to obtain a measurement of the load resistance with good accuracy.
  • the device described also makes it possible to use only one test circuit for any number of lines to be tested, which ensures a significant gain in components compared to a solution using a circuit. test per line. This results in better reliability of the device and a reduced cost.
  • the purpose of the test carried out by means of the device described may be to ensure that the impedance of the line is not less, but more than a predetermined value. If the load is supplied by a voltage source instead of a current source, the power line impedance test will then protect it or the source against overcurrents.

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Relating To Insulation (AREA)

Description

L'invention concerne un dispositif de test de l'impédance d'une ligne de puissance et son application au test d'amorces de moyens pyrotechniques à mise à feu électrique.The invention relates to a device for testing the impedance of a power line and its application to testing primers of pyrotechnic means with electric ignition.

Il existe de nombreux circuits électroniques dans lesquels une charge électrique doit pouvoir être alimentée sous un courant nominal élevé, par exemple de quelques ampères à quelques dizaines d'ampères, par l'intermédiaire d'un étage de puissance. Si l'impédance de la ligne de puissance constituée par la connexion série de l'étage de puissance avec la charge électrique est trop élevée, la source d'alimentation électrique en courant ou en tension ne sera pas toujours en mesure de faire circuler dans la charge le courant nominal ou, à tout le moins, un courant minimal susceptible de provoquer l'effet recherché par l'alimentation de la charge.There are many electronic circuits in which an electrical load must be able to be supplied under a high nominal current, for example from a few amps to a few tens of amps, via a power stage. If the impedance of the power line constituted by the serial connection of the power stage with the electrical load is too high, the source of electrical current or voltage will not always be able to circulate in the loads the nominal current or, at the very least, a minimum current capable of causing the effect sought by the supply of the load.

Dans un certain nombre d'applications ce défaut peut avoir de graves conséquences et il convient de s'assurer préalablement que l'impédance de la ligne de puissance ne dépasse pas une valeur prédéterminée et, corrélativement, que sa continuité électrique est bien assurée.In a certain number of applications this defect can have serious consequences and it is advisable to ensure beforehand that the impedance of the power line does not exceed a predetermined value and, correlatively, that its electrical continuity is well ensured.

EP-A-0061 860 décrit un appareil et un procédé pour tester un module détonant dont la mise à feu est assurée en l'alimentant sous un courant alternatif d'intensité donné par l'intermédiaire d'un transformateur.EP-A-0061 860 describes an apparatus and a method for testing a detonating module, the firing of which is ensured by supplying it with an alternating current of given intensity via a transformer.

Le courant de test doit être également alternatif et d'une intensité suffisante pour permettre une mesure précise de l'impédance du module détonant. Un test sous un courant alternatif de fréquence donnée et d'amplitude constante nécessiterait une source d'alimentation électrique de capacité et d'encombrement excessifs pour un appareil censé être portable. L'appareil comporte en conséquence un condensateur qui, lors du test d'un module détonant, est préchargé à une tension prédéterminée. La décharge du condensateur engendre entre les bornes du primaire du transformateur un pic de tension qui est représentatif de l'impédance du module détonant.The test current must also be alternating and of sufficient intensity to allow precise measurement of the impedance of the detonating module. A test under an alternating current of given frequency and constant amplitude would require an electrical power source of excessive capacity and size for a device supposed to be portable. The apparatus therefore includes a capacitor which, when testing a detonating module, is preloaded to a predetermined voltage. The discharge of the capacitor generates between the terminals of the transformer primary a voltage peak which is representative of the impedance of the detonating module.

Toutefois, la solution décrite à ce document n'est pas transposable au test -----> de lignes de puissances électriques -----> alimentées en courant continu. Or, en dehors de toute considération de capacité ou d'encombrement de la source d'alimentation électrique, il n'est pas toujours possible de tester une ligne de puissance sous un courant continu élevé, soit par ce que la charge est un organe consommable (par exemple une amorce d'un élément pyrotechnique), soit encore parce que l'effet direct ou indirect (électrique, magnétique, thermique, mécanique, etc...) qui en résulterait est incompatible, pour des raisons de sécurité ou autres, avec les conditions du test. D'autre part, la charge électrique ne peut pas toujours être testée indépendamment de l'étage de puissance, ne serait-ce qu'en raison de son inaccessibilité.However, the solution described in this document cannot be transposed to the test -----> of electric power lines -----> supplied with direct current. However, apart from any consideration of capacity or size of the electrical power source, it is not always possible to test a power line under a high direct current, either because the load is a consumable member (for example, the initiation of a pyrotechnic element), either because the direct or indirect effect (electrical, magnetic, thermal, mechanical, etc.) which would result therefrom is incompatible, for safety or other reasons, with the test conditions. On the other hand, the electrical charge cannot always be tested independently of the power stage, if only because of its inaccessibility.

Ces différentes contraintes font qu'il est nécessaire de disposer d'un dispositif permettant de tester sous un faible courant continu l'impédance d'une ligne de puissance comprenant une charge électrique connectée à un étage de puissance susceptible de l'alimenter sous un courant continu nominal élevé.These various constraints make it necessary to have a device making it possible to test under a low direct current the impedance of a power line comprising an electrical load connected to a power stage capable of supplying it with a current. high nominal continuous.

Cette nécessité, et les difficultés rencontrées, seront illustrées à propos du test d'une amorce de cartouche à mise à feu électrique. Une telle amorce comporte de façon connue l'assemblage d'une charge électrique, c'est-à-dire une résistance de chauffe, et d'une petite pastille pyrotechnique apte à détoner en cas d'échauffement suffisant. On note que des échauffements excessifs, mais inférieurs à l'échauffement minimal provoquant la détonation, peuvent créer peu à peu une sorte de fatigue chimique de la pastille, ce qui introduit alors des dérives de ses caractéristiques de détonation relativement à celles qu'elle avait initialement. Une telle détérioration est appelée ci-après "flegmatisation".This need, and the difficulties encountered, will be illustrated in connection with the test of an electric fired cartridge primer. Such a primer comprises in known manner the assembly of an electrical charge, that is to say a heating resistor, and a small pyrotechnic pellet capable of detonating in the event of sufficient heating. It is noted that excessive heating, but less than the minimum heating causing the detonation, can gradually create a kind of chemical fatigue of the pellet, which then introduces drifts of its detonation characteristics relative to those it initially had. Such deterioration is hereinafter called "phlegmatization".

La demande de brevet français FR-A-2 611 883, déposée le 4 mars 1987 par la Demanderesse et plubliée après la date de priorité de la présente demande, décrit un dispositif et un procédé de tir sélectif de cartouches pour aéronef ou autre appareil. Ce dispositif comprend des chargeurs modulaires contenant chacun plusieurs cartouches et des circuits électroniques assurant la gestion du chargement en cartouches et la distribution sélective des ordres de mise à feu aux amorces des différentes cartouches. A cet effet, ces circuits construisent des tables de tir contenant uniquement les adresses des cartouches dont la ligne de tir comprenant un étage de puissance et une amorce est correcte. Chaque ligne de tir doit donc avoir été testée lors de l'initialisation du dispositif et/ou préalablement à l'ordre de mise à feu de la cartouche.French patent application FR-A-2 611 883, filed on March 4, 1987 by the Applicant and published after the priority date of this application, describes a device and a method for the selective firing of cartridges for aircraft or other apparatus. This device includes modular chargers each containing several cartridges and electronic circuits ensuring the management of cartridge loading and the selective distribution of firing orders to the primers of the different cartridges. To this end, these circuits construct firing tables containing only the addresses of the cartridges whose firing line comprising a power stage and a primer is correct. Each line of fire must therefore have been tested during the initialization of the device and / or prior to the firing order of the cartridge.

On a représenté à la figure 1 un circuit électrique simplifié de l'art antérieur faisant partie des connaissances générales de l'homme de métier, comprenant une amorce symbolisée par une résistance de charge Rc, un étage de puissance T2 constitué de deux transistors montés en circuit de Darlington entre une source d'alimentation en courant SC et la charge Rc, et un transistor de commutation T1 permettant la sélection de la ligne de tir à partir des circuits électroniques du dispositif de tir sélectif précité. La base du transistor T1 est attaquée par l'intermédiaire d'une résistance Rb1, son émetteur est connecté à la masse par l'intermédiaire d'une résistance Re et son collecteur est connecté à la base du circuit de Darlington T2 par l'intermédiaire d'une résistance Rb2.FIG. 1 shows a simplified electrical circuit of the prior art forming part of the general knowledge of those skilled in the art, comprising a primer symbolized by a load resistor Rc, a power stage T2 consisting of two transistors mounted in Darlington circuit between a current supply source SC and the load Rc, and a switching transistor T1 allowing the selection of the firing line from the electronic circuits of the aforementioned selective firing device. The base of transistor T1 is attacked via a resistor Rb1, its emitter is connected to ground via a resistor Re and its collector is connected to the base of the Darlington circuit T2 via of a resistance Rb2.

L'impédance de la ligne de tir pourra être déterminée en mesurant la tension Vm à ses bornes lorsqu'un courant continu de test Im lui est injecté par la source de courant SC. On a : Vm = Vr + Vce2 = RcIc + Vce2 (circuit de sortie)

Figure imgb0001
Vm = 2Vbe + Vcel + Rb2Ib2 + ReIe (circuit d'entrée)
Figure imgb0002
avec, Im étant l'intensité à la source SC : Im = (βT2 + 1) Ib2
Figure imgb0003
Ic = Im - Ib2
Figure imgb0004
Ie = Ib1 + Ib2
Figure imgb0005
The impedance of the firing line can be determined by measuring the voltage Vm at its terminals when a direct test current Im is injected into it by the current source SC. We have : Vm = Vr + Vce2 = RcIc + Vce2 (output circuit)
Figure imgb0001
Vm = 2Vbe + Vcel + Rb2Ib2 + ReIe (input circuit)
Figure imgb0002
with, Im being the intensity at the source SC: Im = (βT2 + 1) Ib2
Figure imgb0003
Ic = Im - Ib2
Figure imgb0004
Ie = Ib1 + Ib2
Figure imgb0005

βT2 étant le gain en courant du circuit de Darlington.βT2 being the current gain of the Darlington circuit.

Pour que la mesure de Vm soit significative, il faut que ses variations soient fonction de la valeur de la résistance de la charge (amorce) Rc. Cela signifie que le test (mesure de Vm) ne pourra se faire que lorsque le transistor T2 (circuit de Darlington) est saturé. On a alors : Vm (entrée) = 2Vbe + Vce1sat + Rb2Ib2 + Re(Ib1+Ib2)

Figure imgb0006
Vm (sortie) = Vce2sat + RccIc, d'où :
Figure imgb0007
Rcc = 2Vbe+Vce1sat+Rb2Ib2+Re(Ib1+Ib2)-Vce2sat Ic
Figure imgb0008
For the measurement of Vm to be significant, its variations must be a function of the value of the resistance of the charge (primer) Rc. This means that the test (measurement of Vm) can only be done when the transistor T2 (Darlington circuit) is saturated. We then have: Vm (input) = 2Vbe + Vce1sat + Rb2Ib2 + Re (Ib1 + Ib2)
Figure imgb0006
Vm (output) = Vce2sat + RccIc, hence:
Figure imgb0007
Rcc = 2Vbe + Vce1sat + Rb2Ib2 + Re (Ib1 + Ib2) -Vce2sat Ic
Figure imgb0008

Rcc étant la valeur de la résistance de charge qui, pour un courant Ic donné, porte le transistor T2 à saturation.Rcc being the value of the load resistance which, for a given current Ic, brings the transistor T2 to saturation.

Dans un exemple spécifique de réalisation où l'on utilise une amorce de type "1A1W 5 minutes non feu", le courant de test maximal autorisé permettant d'éviter la flegmatisation de l'amorce est une courant continu de 50 mA. Si l'on utilise pour les transistgors T1 et T2 les composants 2N2222A et BDX64C dont les caractéristiques fournies par les constructeurs sont les suivantes :

Vce1sat = 0,1V
2VbcT2 = 1,2V
Vce2sat = 0,8V
βT2 = 100
   et dans cet exemple
Figure imgb0009
le courant Ic traversant la charge est sensiblement égal à 50 mA.In a specific exemplary embodiment where a “1A1W 5 minutes fire-free” type primer is used, the maximum authorized test current enabling the phlegmatization of the primer to be avoided is a direct current of 50 mA. If the 2N2222A and BDX64C components are used for the T1 and T2 transistors, the characteristics provided by the manufacturers are as follows:
Vce1sat = 0.1V
2VbcT2 = 1.2V
Vce2sat = 0.8V
βT2 = 100
and in this example
Figure imgb0009
the current Ic passing through the load is substantially equal to 50 mA.

Si l'on reporte ces valeurs dans l'expression 8, on obtient : Rcc # 10Ω.If we transfer these values to expression 8, we obtain: Rcc # 10Ω.

Or, le courant minimal qui doit traverser une amorce du type précité pour assurer sa mise à feu est de 3A. Dans le cas où la tension électrique disponible est de 24V, on constate qu'une voie de tir ne pourra être déclarée opérationnelle que si la valeur de l'impédance de la ligne de tir est au plus égale à 8 Ω.However, the minimum current which must pass through a primer of the aforementioned type to ensure its ignition is 3A. If the available electrical voltage is 24V, we note that a firing channel can only be declared operational if the value of the firing line impedance is at most equal to 8 Ω.

Le résultat précédent permet de conclure qu'il sera impossible, sous un courant continu de 50 mA, de mesurer une valeur inférieure à 8 Ω pour ce type de montage.The previous result allows to conclude that it will be impossible, under a direct current of 50 mA, to measure a value lower than 8 Ω for this type of assembly.

L'invention vise à fournir un dispositif de test d'une ligne de puissance qui permette de surmonter cette difficulté.The invention aims to provide a device for testing a power line which overcomes this difficulty.

A cet effet, elle a pour objet un dispositif de test en courant continu de l'impédance d'au moins une ligne de puissance, chaque ligne comprenant une charge électrique connectée à un étage de puissance susceptible de l'alimenter sous un courant continu nominal élevé, caractérisé en ce qu'il comprend :

  • des moyens générateurs de courant constant aptes à faire circuler dans chaque ligne un courant continu de test de faible valeur par rapport au courant nominal,
  • un dipôle électrique connecté dans chaque ligne de puissance pour engendrer une tension de décalage sensiblement constante lorsque ladite ligne de puissance est parcourue par le courant continu de test ou le courant nominal, ladite tension de décalage s'ajoutant à la chute de tension aux bornes de la charge pour porter l'étage de puissance à saturation lorsque la charge est parcourue par le courant continu de test,
  • des moyens de mesure de la chute de tension aux bornes de chaque ligne de puissance, et
  • des moyens d'exploitation du résultat de ladite mesure de tension.
To this end, it relates to a DC test device for the impedance of at least one power line, each line comprising an electrical load connected to a power stage capable of supplying it with a nominal DC current. high, characterized in that it comprises:
  • constant current generating means able to circulate in each line a direct test current of low value compared to the nominal current,
  • an electrical dipole connected in each power line to generate a substantially constant offset voltage when said power line is traversed by the test direct current or the nominal current, said offset voltage being added to the voltage drop across the terminals of the load to bring the power stage to saturation when the load is traversed by the direct test current,
  • means for measuring the voltage drop across each power line, and
  • means for exploiting the result of said voltage measurement.

D'autres caractéristiques et avantages de l'invention résulteront de la description qui va suivre d'un mode de réalisation donné uniquement à titre d'exemple et illustré par les dessins annexés sur lesquels :

  • la figure 1 est un schéma électrique d'un étage de puissance suivant l'état de la technique ;
  • la figure 2 est un schéma analogue à celui de la figure 1 représentant un étage de puissance modifié conformément à l'invention ;
  • la figure 3 est un graphique illustrant l'effet original obtenu au moyen du circuit modifié de la figure 2 ;
  • la figure 4A est un schéma synoptique d'un dispositif permettant le test d'une pluralité de lignes de puissance adressables sélectivement :
  • la figure 4B est une vue analogue à la figure 4A d'un dispositif de test suivant une variante de réalisation ; et
  • la figure 5 est un schéma synoptique plus détaillé du circuit de test proprement dit des figures 4A et 4B.
Other characteristics and advantages of the invention will result from the description which follows of an embodiment given solely by way of example and illustrated by the appended drawings in which:
  • Figure 1 is an electrical diagram of a power stage according to the state of the art;
  • Figure 2 is a diagram similar to that of Figure 1 showing a power stage modified according to the invention;
  • Figure 3 is a graph illustrating the original effect obtained by means of the modified circuit of Figure 2;
  • FIG. 4A is a block diagram of a device allowing the testing of a plurality of selectively addressable power lines:
  • Figure 4B is a view similar to Figure 4A of a test device according to an alternative embodiment; and
  • Figure 5 is a more detailed block diagram of the actual test circuit of Figures 4A and 4B.

L'étage du puissance 10 de la figure 2 est similaire à celui de la figure 1. Il comprend un circuit de Darlington T2 constitué de deux transistors PNP. L'émetteur de T2 est connecté à une source d'alimentation en courant SC et sa base est connectée au collecteur d'un transistor de commutation T1 par l'intermédiaire d'une résistance Rb2. L'émetteur du transistor T1 est connecté à la masse par l'intermédiaire d'une résistance Re et sa base est attaquée par un circuit d'adressage (non représenté) à travers une résistance Rb1.The power stage 10 in FIG. 2 is similar to that in FIG. 1. It includes a Darlington T2 circuit made up of two PNP transistors. The emitter of T2 is connected to a current supply source SC and its base is connected to the collector of a switching transistor T1 via a resistor Rb2. The emitter of transistor T1 is connected to ground via a resistor Re and its base is attacked by an addressing circuit (not shown) through a resistor Rb1.

A la différence du circuit de la figure 1, le collecteur de T2 est connecté à la charge électrique Rc par l'intermédiaire d'une diode de puissance D.Unlike the circuit of Figure 1, the collector of T2 is connected to the electrical load Rc via a power diode D.

Les courants et tensions présents en différents points du circuit ont été représentés sur la figure 2 et l'on supposera que les composants électriques utilisés sont identiques à ceux de circuit de la figure 1.The currents and voltages present at different points on the circuit have been shown in FIG. 2 and it will be assumed that the electrical components used are identical to those of the circuit in FIG. 1.

Compte tenu du la présence de la diode D qui introduit une tension de décalage VD, la formule (7) exprimant la valeur de la tension Vm du côté de la sortie de l'étage de puissance se trouve modifiée comme suit : Vm (sortie) = Vce2sat + VD + RccIc.

Figure imgb0010
Given the presence of the diode D which introduces an offset voltage VD, the formula (7) expressing the value of the voltage Vm on the output side of the power stage is modified as follows: Vm (output) = Vce2sat + VD + RccIc.
Figure imgb0010

L'expression (8) devient alors : Rcc = 2Vbe+Vce1sat+Rb2Ib2+Re(Ib1+Ib2)-Vce2sat-VD Ic

Figure imgb0011
Expression (8) then becomes: Rcc = 2Vbe + Vce1sat + Rb2Ib2 + Re (Ib1 + Ib2) -Vce2sat-VD Ic
Figure imgb0011

Si l'on reporte les valeurs numériques précitées dans l'expression 10, on constate qu'il est désormais possible, pour une résistance Rcc d'environ 8Ω, d'obtenir la saturation du circuit T2 si la tension de déclage VD est au moins égale à 0,1V environ.If we carry over the numerical values mentioned above in expression 10, we see that it is now possible, for a resistance Rcc of approximately 8Ω, to obtain the saturation of the circuit T2 if the switching voltage VD is at least equal to about 0.1V.

Ce phénomène sera mieux compris en examinant le graphique de la figure 3 où l'on a tracé, pour un courant continue Ic donné, l'évolution de la tension Vm de sortie de l'étage de puissance et de la tension RcIc aux bornes de la charge Rcen fonction de l'impédance de cette dernière.This phenomenon will be better understood by examining the graph in FIG. 3 where we have traced, for a given direct current Ic, the evolution of the output stage voltage Vm and of the voltage RcIc across the terminals of the load Rcen as a function of the latter's impedance.

En l'absence de la diode D, la tension de sortie Vm reste constante tant que Rc est inférieure à une valeur Rcc telle que la différence entre la tension Vm et la tension RcIc est égale à la tension de saturation Vce2sat de T2. Pour les valeurs supérieures de Rc, Vm varie linéairement avec Rc.In the absence of the diode D, the output voltage Vm remains constant as long as Rc is less than a value Rcc such that the difference between the voltage Vm and the voltage RcIc is equal to the saturation voltage Vce2sat of T2. For higher values of Rc, Vm varies linearly with Rc.

En présence d'une tension de décalage VD, la saturation du circuit T2 est atteinte pour une valeur inférieure R′cc de la charge Rc : la tension de sortie de l'étage de puissance présente alors l'allure représentée par la courbe V′m en traits mixtes.In the presence of an offset voltage VD, the saturation of the circuit T2 is reached for a lower value R′cc of the load Rc: the output voltage of the power stage then has the shape represented by the curve V ′ m in dashed lines.

La mesure de la tension de sortie Vm, V′m n'étant le reflet de l'impédance de la ligne de puissance que lorsque la saturation de T2 est atteinte, on observe que pour un courant Ic donné, le circuit modifié de la figure 2 permet une telle mesure pour des valeurs plus faibles de la résistance de charge Rc.The measurement of the output voltage Vm, V′m being the reflection of the impedance of the power line only when the saturation of T2 is reached, we observe that for a given current Ic, the modified circuit of figure 2 allows such a measurement for lower values of the load resistance Rc.

Dans l'exemple numérique précité, on a calculé que la valeur minimale de la tension de décalage VD était de 0,1 V. En réalité, compte tenu de la dispersion intrinsèque des caractéristiques des composants et de leur dispersion liée à la température, cette valeur devra être supérieure pour assurer que la mesure sous faible courant continu a bien lieu dans la zone de variation linéaire de Vm en fonction de Rc. De plus, pour que la mesure effectuée sous le faible courant de mesure Im soit une image fidèle de l'impédance de la ligne de puissance, il est nécessaire que la tension de décalage introduite par le dipôle intercalé dans le circuit collecteur de T2 demeure sensiblement inchangée lorsque cette ligne est parcourue par le courant nominal élevé (au moins 3 ampères) destiné à assurer la mise à feu de l'amorce Rc.In the aforementioned digital example, it was calculated that the minimum value of the offset voltage VD was 0.1 V. In reality, taking into account the intrinsic dispersion of the characteristics of the components and their dispersion linked to the temperature, this value must be greater to ensure that the measurement under low direct current takes place in the linear variation zone of Vm as a function of Rc. In addition, for the measurement carried out under the low measurement current Im to be a faithful image of the impedance of the power line, it is necessary that the offset voltage introduced by the dipole interposed in the collector circuit of T2 remains substantially unchanged when this line is crossed by the high nominal current (at least 3 amperes) intended to ensure the ignition of the primer Rc.

C'est la raison pour laquelle une diode de puissance est particulièrement bien adaptée, car elle engendre une tension de décalage de l'ordre de 0,6 à 0,8 V pour des courants allant de quelques dizaines de milliampères à plusieurs ampères. Néanmoins, l'invention n'est pas limitée à ce type de composant et tout autre dipôle électrique susceptible d'engendrer une tension de décalage sensiblement constante de l'ordre de grandeur voulu serait parfaitement approprié.This is the reason why a power diode is particularly well suited, since it generates an offset voltage of the order of 0.6 to 0.8 V for currents ranging from a few tens of milliamps to several amps. However, the invention is not limited to this type of component and any other electrical dipole capable of generating a substantially constant offset voltage of the desired order of magnitude would be perfectly suitable.

On notera également que la diode D pourrait être connectée, non pas entre le circuit T2 et la charge Rc, mais entre la charge Rc et la masse.It will also be noted that the diode D could be connected, not between the circuit T2 and the load Rc, but between the load Rc and the ground.

Cette seconde configuration présente l'avantage de ne nécessiter qu'une seule diode pour le test d'un certain nombre de lignes de puissance en parallèle, au moyen d'un circuit de test unique 20 comme représenté à la figure 4A.This second configuration has the advantage of requiring only a single diode for testing a certain number of power lines in parallel, by means of a single test circuit 20 as shown in FIG. 4A.

Toutefois, il peut être préférable de prévoir une diode Di associée à chaque charge Rci si, par exemple, la configuration d'ensemble des circuits ne permet pas de disposer d'une bonne masse commune. La diode Di peut être connectée entre l'étage de puissance et la charge comme représenté à la figure 4B, ou entre la charge et la masse. Malgré la multiplication du nombre de diodes Di, cette configuration peut également se justifier si la technologie de fabrication utilisée (circuits hybrides par exemple) permet d'intégrer dans le même substrat l'étage de puissance 10i et la diode correspondante Di.However, it may be preferable to provide a diode Di associated with each load Rci if, for example, the overall configuration of the circuits does not make it possible to have a good common ground. The diode Di can be connected between the power stage and the load as shown in FIG. 4B, or between the load and the ground. Despite the multiplication of the number of diodes Di, this configuration can also be justified if the manufacturing technology used (hybrid circuits for example) allows the power stage 10i and the corresponding diode Di to be integrated into the same substrate.

Les dispositifs des figures 4A et 4B ne diffèrent que par la position et le nombre de diodes utilisées, ils feront l'objet d'une description commune.The devices of FIGS. 4A and 4B differ only in the position and the number of diodes used, they will be the subject of a common description.

Le circuit de test 20, comprenant la source de courant SC, est connecté en parallèle à tous les étages de puissance 10l...10i... 10n qu'il convient de tester. On supposera dans la suite que les étages de puissance 10i, les charges Rci et les diodes Di ont les mêmes caractéristiques intrinsèques dans chaque ligne de puissance Ll....Li....Ln et qu'on y fait circuler le même courant continu de test Im. Le circuit de test 20 présente une entrée E de commande de test et une sortie S de lecture de la réponse au test.The test circuit 20, comprising the current source SC, is connected in parallel to all the stages of power 10 l ... 10i ... 10n which should be tested. It will be assumed below that the power stages 10i, the charges Rci and the diodes Di have the same intrinsic characteristics in each power line Ll .... Li .... Ln and that the same current is circulated there. continuous test Im. The test circuit 20 has an input E for test control and an output S for reading the response to the test.

Les blocs 21 et 22 représentés pour mémoire figurent respectivement un circuit générateur du courant continu nominal d'alimentation des charges Rci et un circuit d'adressage des étages de puissance 10l...10i...10n. Le circuit d'adressage 22 sélectionne l'adresse de l'entrée Ai de l'étage de puissance 10i qu'il convient de tester ou d'alimenter sous le courant nominal.The blocks 21 and 22 shown for the record show respectively a circuit for generating the nominal direct current for supplying the loads Rci and an addressing circuit for the power stages 10 l ... 10i ... 10n . The addressing circuit 22 selects the address of the input Ai of the power stage 10i which should be tested or supplied under the nominal current.

Dans une forme de réalisation particulièrement simple de l'invention, le circuit de test 20 comprend la source de courant SC et un circuit de mesure de la tension Vm. Le test est déclenché en appliquant une commande appropriée à l'entrée E et en sélectionnant l'adresse de l'étage du puissance faisant partie de la ligne de puissance Ll....Li....Ln dont il convient de mesurer l'impédance. Celle-ci est fournie par la mesure de la tension Vm entre le point P et la masse.In a particularly simple embodiment of the invention, the test circuit 20 comprises the current source SC and a circuit for measuring the voltage Vm. The test is triggered by applying an appropriate command to the input E and by selecting the address of the power stage forming part of the power line Ll .... Li .... Ln whose l should be measured. 'impedance. This is provided by measuring the voltage Vm between point P and ground.

De préférence, la tension mesurée Vm est comparée à une valeur de seuil prédéterminée et le résultat de cette comparaison permet ou non de valider la ligne de puissance testée. Les circuits générateurs d'une valeur de seuil et de comparaison peuvent faire partie du circuit de test 20 ou être extérieurs à celui-ci. Dans le premier cas, la sortie S délivre alors un signal susceptible de prendre l'un ou l'autre de deux états logiques suivant le résultat de la comparaison.Preferably, the measured voltage Vm is compared with a predetermined threshold value and the result of this comparison may or may not validate the power line tested. The circuits generating a threshold and comparison value can be part of the test circuit 20 or be external to it. In the first case, the output S then delivers a signal capable of taking one or the other of two logical states depending on the result of the comparison.

Les opérations d'alimentation de la charge sous le courant continu de test Im, de mesure de la tension Vm et éventuellement de comparaison sont répétées pour chaque ligne de puissance à tester.The operations of supplying the load under the direct test current Im, of measuring the voltage Vm and possibly of comparison are repeated for each power line to be tested.

Néanmoins, la dispersion intrinsèque des caractéristiques des composants ainsi que leur dispersion liée à la température fait que la précision de la mesure obtenue par cette forme simplifiée de réalisation ne sera pas suffisante dans certaines applications. On pourra alors recourir à un circuit de test mettant en oeuvre une mesure différentielle et dont un exemple de réalisation est donné à la figure 5.Nevertheless, the intrinsic dispersion of the characteristics of the components as well as their dispersion linked to the temperature means that the precision of the measurement obtained by this simplified embodiment will not be sufficient in certain applications. We can then use a test circuit implementing a differential measurement and an exemplary embodiment of which is given in FIG. 5.

Cette mesure sera effectuée par une variation du courant continu de test Im dans un temps très court (quelques microsecondes), ce qui permettra de considérer la température des composatns comme constante. Si l'on reprend l'étage de puissance de la figure 2, on a le système d'équation suivant : Vm1 = (Vce2sat)1 + VD1 + RcIm1

Figure imgb0012
Vm2 = (Vce2sat)2 + VD2 + RcIm2
Figure imgb0013
This measurement will be made by a variation of the direct current of test Im in a very short time (a few microseconds), which will allow to consider the temperature of the composites as constant. If we take again the power stage of figure 2, we have the following system of equation: Vm1 = (Vce2sat) 1 + VD1 + RcIm1
Figure imgb0012
Vm2 = (Vce2sat) 2 + VD2 + RcIm2
Figure imgb0013

Si on choisit Im2>Im1, on a : Rc = ΔVm - (ΔVce2sat + ΔVD) ΔIm , où :

Figure imgb0014
ΔIm = Im2 - Im1, est la variation connue du courant de test,
ΔVm = Vm2 - Vm1, est la variation de la tension Vm mesurée aux bornes de la ligne de puissance testée,
ΔVce2sat est la variation de la tension de saturation du circuit T2 pour la variation de courant ΔIm,
ΔVD est la variation de la tension de décalage de la diode D pour la variation de courant ΔIm.
ΔVce2 et ΔVD sont fonction des composants utilisés et seront à déterminer une fois pour toutes.If we choose Im2> Im1, we have: Rc = ΔVm - (ΔVce2sat + ΔVD) ΔIm , or :
Figure imgb0014
ΔIm = Im2 - Im1, is the known variation of the test current,
ΔVm = Vm2 - Vm1, is the variation of the voltage Vm measured at the terminals of the power line tested,
ΔVce2sat is the variation of the saturation voltage of circuit T2 for the variation of current ΔIm,
ΔVD is the variation of the offset voltage of diode D for the variation of current ΔIm.
ΔVce2 and ΔVD are a function of the components used and will be determined once and for all.

A titre d'exemple, pour les valeurs numériques envisagées précédemment à propose des figures 1 et 2, le bon fonctionnement de l'étage de puissance 10 est assuré pour des courants compris entre 35 et 50 mA, ce qui conduit à adopter ΔIm = 15 mA. La variation de la tension de saturation du transistor de puissance (T2)Vce2sat est de 15±5 mV pour une variation ΔIm de 15 mA, dans la gamme des températures comprises entre -55 et +100°C. La variation de la tension directe de la diode ΔVD dans les mêmes conditions est de 15 mV ± 5 mV.By way of example, for the numerical values considered above with reference to FIGS. 1 and 2, the correct operation of the power stage 10 is ensured for currents between 35 and 50 mA, which leads to adopt ΔIm = 15 my. The variation of the saturation voltage of the power transistor (T2) Vce2sat is 15 ± 5 mV for a variation ΔIm of 15 mA, in the temperature range between -55 and + 100 ° C. The variation of the forward voltage of the ΔVD diode in the same conditions is 15 mV ± 5 mV.

Il en résulte que le seuil de détection pour une valeur de la charge égale à 8Ω est :
ΔVm = 8x15x10⁻³ + (15 + 15) x 10⁻³

Figure imgb0015
soit ΔVm = 150 mV.
Figure imgb0016
It follows that the detection threshold for a load value equal to 8Ω is:
ΔVm = 8x15x10⁻³ + (15 + 15) x 10⁻³
Figure imgb0015
is ΔVm = 150 mV.
Figure imgb0016

Si le circuit de mesure de ΔVm est réglé sur cette valeur, l'erreur liée aux variations de ΔVce2sat et ΔVD est de ± 0,7 . (+10 mV) (+15 mA)

Figure imgb0017
, soit
   R mesure = 8Ω ± 0,7ΩIf the measurement circuit of ΔVm is set to this value, the error linked to variations in ΔVce2sat and ΔVD is ± 0.7. (+10 mV) (+15 mA)
Figure imgb0017
, is
R measurement = 8Ω ± 0.7Ω

On se reportera maintenant à la figure 5 qui montre un circuit de test par mesure différentielle applicable notamment au test d'amorces de cartouches dans le cadre du dispositif objet de la demande de brevet français No. FR-A-2 611 883 précitée.Reference will now be made to FIG. 5 which shows a differential measurement test circuit applicable in particular to the test of cartridge primers in the context of the device which is the subject of the above-mentioned French patent application No. FR-A-2 611 883.

Le circuit de test 20 comporte en entrée un circuit d'isolement optoélectronique 201 auquel sont appliquées les commandes de déclenchement de test sur son entrée E. La sortie du circuit d'isolement 201 attaque l'entrée de déclenchement d'un premier circuit monostable 202 ayant une constante de temps de 40 µs, une entrée d'une porte ET 203 et l'entrée de déclenchement d'un deuxième circuit monostable 204 ayant une constante de temps de 65 µs.The test circuit 20 comprises at the input an optoelectronic isolation circuit 201 to which the test trigger commands are applied to its input E. The output of the isolation circuit 201 attacks the trigger input of a first monostable circuit 202 having a time constant of 40 µs, an input of an AND gate 203 and the trigger input of a second monostable circuit 204 having a time constant of 65 µs.

La sortie inversée Q du premier monostable 202 attaque la deuxième entrée de la porte ET 203 et sa sortie non inversée Q pilote une première source de courant 205 engendrant un premier courant continu de mesure de 35 mA, ainsi qu'une entrée d'autorisation d'une mémoire analogique 206.The inverted output Q of the first monostable 202 attacks the second input of the AND gate 203 and its non-inverted output Q drives a first current source 205 generating a first direct measurement current of 35 mA, as well as an authorization input d '' an analog memory 206.

La sortie de la porte ET 203 pilote une deuxième source de courant 207 engendrant un second courant continu de mesure de 50 mA, ainsi que l'entrée d'autorisation d'un circuit de mesure 208.The output of the AND gate 203 controls a second current source 207 generating a second direct measurement current of 50 mA, as well as the authorization input of a measurement circuit 208.

Les sources de courant 205 et 207 sont connectées en parallèle aux différents étages de puissance des lignes à tester (dont une seule a été représentée dans un but de simplicité) par l'intermédiaire d'une diode 214. De même, le circuit 21 générateur du courant de tir est connecté à ces mêmes étages de puissance par l'intermédiaire d'une diode 215. Les diodes 214 et 215 jouent ensemble le rôle d'une porte OU.The current sources 205 and 207 are connected in parallel to the different power stages of the lines to be tested (only one of which has been shown for the sake of simplicity) by means of a diode 214. Similarly, the generator circuit 21 shooting current is connected to these same power stages via a diode 215. The diodes 214 and 215 together play the role of an OR gate.

Les sorties de la mémoire analogique 206 et du circuit de mesure 208 sont appliquées à un comparateur de mesure 209 dont la sortie est connectée à une mémoire logique 210.The outputs of the analog memory 206 and of the measurement circuit 208 are applied to a measurement comparator 209 whose output is connected to a logic memory 210.

L'entrée d'horloge de la mémoire logique 210 est attaquée par la sortie d'un circuit de lecture 211 lui-même piloté par le circuit monostable 204.The clock input of the logic memory 210 is attacked by the output of a read circuit 211 itself controlled by the monostable circuit 204.

Le résultat de la mesure présent à la sortie Q de la mémoire logique 210 est transmis à la sortie S du circuit de test 20 par l'intermédiaire d'un circuit d'isolement optoélectronique 212 et d'un circuit de sortie adaptateur 213.The result of the measurement present at the output Q of the logic memory 210 is transmitted to the output S of the test circuit 20 via an optoelectronic isolation circuit 212 and an adapter output circuit 213.

En fonctionnement, un test de la ligne de puissance Li est déclenché en sélectionnant l'entrée Ai de l'étage de puissance 10i et en appliquant un signal de commande de test à l'entrée E. Cellui-ci, transmis par le circuit d'isolement 201 (photocoupleur), provoque la génération d'une impulsion de 40 µs par le circuit monostable 202. Cette impulsion commande la source de courant 205 qui fait circuler un courant continu de 35 mA dans la ligne de puissance Li. Simultanément, cette impulsion de 40µs appliquée à la mémoire analogique 206 autorise cette dernière à mémoriser la tension dévoloppée au point P.In operation, a test of the power line Li is triggered by selecting the input Ai of the power stage 10i and by applying a test command signal to the input E. Cellui, transmitted by the circuit d isolation 201 (photocoupler), causes the generation of a 40 µs pulse by the monostable circuit 202. This pulse controls the current source 205 which circulates a direct current of 35 mA in the power line Li. Simultaneously, this 40µs pulse applied to analog memory 206 authorizes the latter to memorize the voltage developed at point P.

Au bout de 40µs, la sortie Q du circuit monostable 202 passe à "0" et sa sortie Q passe à "1".After 40 µs, the Q output of the monostable circuit 202 changes to "0" and its Q output changes to "1".

La sortie de la porte ET 203 passe également à "1" et la source de courant 207 fait circuler un courant continu de 50 mA dans la ligne de puissance Li. Le niveau "1" à la sortie de la porte ET 203 autorise également le circuit 208 à mesurer la tension au point P. Le comparateur 209 compare à une valeur de seuil prédéterminé la différence ΔVm entre les tensions engendrées au point P par les courants de 50 et 35 mA respectivement ou, ce qui est équivalent, compare la sortie du circuit de mesure 208 à la somme de la valeur de seuil et de la valeur mémorisée présente à la sortie de la mémoire analogique 206. Bien entendu, on peut encore retrancher la valeur de seuil de la sortie du circuit de mesure 208 et comparer cette différence à la sortie de la mémoire analogique 206.The output of the AND gate 203 also changes to "1" and the current source 207 circulates a direct current of 50 mA in the power line Li. The level "1" at the output of the AND gate 203 also allows the circuit 208 to measure the voltage at point P. Comparator 209 compares to a predetermined threshold value the difference ΔVm between the voltages generated at point P by the currents of 50 and 35 mA respectively or, which is equivalent, compares the output of the measuring circuit 208 at the sum of the threshold value and the memorized value present at the output of the analog memory 206. Of course, it is also possible to subtract the threshold value from the output of the measurement circuit 208 and compare this difference to the output of the analog memory 206.

Si ΔVm est supérieur à la valeur de seuil, c'est-à-dire si l'impédance de la charge Rci est supérieure à la valeur admise prédéterminée, la sortie du comparateur prend la valeur logique "0". Dans le cas contraire, elle prend la valeur logique "1". En variante, on peut naturellement adapter une logique inversée.If ΔVm is greater than the threshold value, that is to say if the impedance of the load Rci is greater than the predetermined admitted value, the output of the comparator takes the logic value "0". Otherwise, it takes the logical value "1". Alternatively, one can naturally adapt a reverse logic.

Au bout de 65µs, le circuit monostable 204 provoque l'émission d'une impulsion par le circuit de lecture 211. L'état logique du comparateur 209 appliqué à l'entrée D de la mémoire logique 20 est transféré à sa sortie Q. Cet état logique est transmis à la sortie S par l'intermédiaire du circuit de sortie optoélectronique 212 et du circuit de sortie adaptateur 213.At the end of 65 μs, the monostable circuit 204 causes the emission of a pulse by the read circuit 211. The logic state of the comparator 209 applied to the input D of the logic memory 20 is transferred to its output Q. This logic state is transmitted to the output S via the optoelectronic output circuit 212 and the adapter output circuit 213.

La sortie S du circuit de test 20 est à l'état "1" si la ligne de puissance Li associée à l'amorce Rci est opérationnelle et à l'état "0" si celle-ci est défectueuse.The output S of the test circuit 20 is in state "1" if the power line Li associated with the primer Rci is operational and in state "0" if the latter is defective.

Il résulte de ce qui précède que l'invention permet, avec une bonne précision, une mesure de résistance faible à travers un étage de puissance, ceci en s'affranchissant de la dispersion (intrinsèque et liée à la température) des caractéristiques des composants constituant la ligne de mesure.It follows from the above that the invention allows, with good precision, a low resistance measurement across a power stage, this by overcoming the dispersion (intrinsic and related to temperature) of the characteristics of the constituent components. the measurement line.

Actuellement la mesure effectuée correspond à l'impédance totale, ligne (L), transistor plus charge (Rc). Il serait possible, connaissant l'impédance de la ligne (câble L) hors charge et une valeur approximative des impédances dynamique du transistor de puissance, d'obtenir une mesure de la résistance de charge avec une bonne précision.Currently the measurement performed corresponds to the total impedance, line (L), transistor plus load (Rc). It would be possible, knowing the impedance of the line (cable L) without load and an approximate value of the dynamic impedances of the power transistor, to obtain a measurement of the load resistance with good accuracy.

Le dispositif décrit permet également de n'utiliser qu'un seul circuit de test pour un nombre quelconque de lignes à tester, ce qui assure un gain important de composants par rapport à une solution faisant appel à un circuit de test par ligne. Il en résulte une meilleure fiabilité du dispositif et un coût réduit.The device described also makes it possible to use only one test circuit for any number of lines to be tested, which ensures a significant gain in components compared to a solution using a circuit. test per line. This results in better reliability of the device and a reduced cost.

Par ailleurs, il est possible de tester des lignes de puissance de caractéristiques différentes au moyen d'un même circuit de test, en adaptant le seuil de comparaison et/ou l'intensité du courant continu de mesure à chaque ligne de puissance adressée. A cet effet, on peut utiliser, par exemple, un générateur de courant programmable et/ou un circuit qui appliquera au comparateur 209 une valeur de seuil fonction de la ligne de puissance Li sélectionnée.Furthermore, it is possible to test power lines of different characteristics by means of the same test circuit, by adapting the comparison threshold and / or the intensity of the measurement direct current to each power line addressed. For this purpose, it is possible to use, for example, a programmable current generator and / or a circuit which will apply to the comparator 209 a threshold value depending on the selected power line Li.

On notera enfin que le test effectué au moyen du dispositif décrit peut avoir pour objet de s'assurer que l'impédance de la ligne est, non pas inférieure, mais supérieure à une valeur prédéterminée. Si la charge est alimentée par une source de tension au lieu d'une source de courant, le test de l'impédance de la ligne de puissance permettra alors de protéger celle-ci ou la source contre des surintensités.Finally, it should be noted that the purpose of the test carried out by means of the device described may be to ensure that the impedance of the line is not less, but more than a predetermined value. If the load is supplied by a voltage source instead of a current source, the power line impedance test will then protect it or the source against overcurrents.

Il va de soi que les modes de réalisation décrits ne sont que des exemples et qu'on pourrait les modifier, notamment par substitution d'équivalents techniques, sans sortir pour cela du cadre de l'invention.It goes without saying that the embodiments described are only examples and that they could be modified, in particular by substitution of technical equivalents, without departing from the scope of the invention.

Claims (12)

1. Device for direct current testing of the impedance of at least one power line, each line comprising an electrical load connected to a power stage capable of supplying it at a high nominal direct current, characterised in that it comprises:
- means for generating steady current (SC; 205, 207) capable of causing to flow in each line (Li) a DC test current (Im) of low value compared with the nominal current,
- an electric dipole (D; Di) connected in each power line in order to generate an offset voltage (VD) which is substantially constant when the DC test current or the nominal current passes through the said power line, the said offse voltage (VD) being added to the voltage drop at the terminals of the load (Rc; Rci) to put the power stage (10; 10i) at saturation when the DC test current passes through the load,
- means (206, 208) for measuring the voltage drop at the terminals of each power line, and
- means (209-213) for using the result of the said voltage measurement.
2. Device according to claim 1, characterised in that the electric dipole is a power diode (D).
3. Device according to either of claims 1 and 2, characterised in that each power stage (10; 10i) comprises two transistors configured in a Darlington circuit.
4. Device according to any one of claims 1 to 3, characterised in that the steady current generating means (Sc; 205, 207) are suitable for causing to pass through each power line (Li), successively a first (Im1) and a second (Im2) DC test current greater than the first and in that the said means of use comprise a comparator (209) for comparing the voltage drops generated at the terminals of the power line respectively by the first and second DC test currents.
5. Device according to claim 4, characterised in that the measuring means comprise an analogue memory (206) in which is stored the voltage drop generated by the first test current and a circuit (208) for measuring the voltage drop generated by the second test current and in that the said comparator (209) compares the difference between the said voltage drops with a predetermined threshold.
6. Device according to claim 5, characterised in that it comprises a first time delay circuit (202) controlling the steady current generating means (205) and the analogue memory (206) to cause the first test current to pass for a predetermined period of time and to store the resulting voltage drop at the terminals of each power line and a logic gate (203) controlling the steady current generating means (207) and the measuring circuit (208) to cause the second test current to flow and to measure the resulting voltage drop at the terminals of each power line after the elapse of the said predetermined time period.
7. Device according to claim 6, characterised in that the comparator (209) applies to the input of a logic memory (210) a logic signal capable of adopting one or other of two states depending on the result of the said comparison and in that the said device comprises a second delay circuit (204) with a time constant greater than that of the first time delay circuit (202) controlling a circuit (211) for reading the logic state applied by the comparator to the said logic memory (210).
8. Device according to any one of claims 1 to 7 for measuring the impedance of several power lines, each power stage of which is addressable selectively, comprising, in parallel with the said power lines (Li), a common test circuit (20) incorporating the steady current generating means, the measuring means and the means of use.
9. Device according to claim 8, characterised in that the electrical loads (Rci) of the different power lines (Li) are connected in parallel to earth through a common electric dipole (D).
10. Device according to claim 8, characterised in that each power line (Li) comprises an electric dipole (Di).
11. Device according to claim 10, characterised in that each electric dipole (Di) is connected between the power stage (10i) and the electrical load (Rci).
12. Application of the device according to any one of claims 1 to 11 to the testing of primers for pyrotechnic devices with electrical ignition resistive elements, characterised in that the said resistances constitute the electrical loads (Rci) of the power lines (Li) and the test current or currents have a value less than the current liable to cause the "flegmatisation" of the said primers.
EP19880401366 1987-06-15 1988-06-06 Power line impedance testing appliance, and its use in a pyrotecnical device firing test Expired - Lifetime EP0296015B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8708266A FR2616548B1 (en) 1987-06-15 1987-06-15 DEVICE FOR TESTING THE IMPEDANCE OF A POWER LINE AND ITS APPLICATION TO TESTING PRIMERS OF PYROCHNIC MEANS
FR8708266 1987-06-15

Publications (2)

Publication Number Publication Date
EP0296015A1 EP0296015A1 (en) 1988-12-21
EP0296015B1 true EP0296015B1 (en) 1992-01-29

Family

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Application Number Title Priority Date Filing Date
EP19880401366 Expired - Lifetime EP0296015B1 (en) 1987-06-15 1988-06-06 Power line impedance testing appliance, and its use in a pyrotecnical device firing test

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EP (1) EP0296015B1 (en)
DE (1) DE3868150D1 (en)
ES (1) ES2029893T3 (en)
FR (1) FR2616548B1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU663242B2 (en) * 1993-02-18 1995-09-28 Csir A testing circuit
AR046498A1 (en) * 2003-07-15 2005-12-14 Detnet South Africa Pty Ltd DETECTION OF THE STATE OF A DETONATOR FUSE
CN103017608B (en) * 2012-12-20 2015-05-06 北京电子工程总体研究所 Activation circuit tester
AT524354B1 (en) * 2020-10-19 2022-04-15 Juergen Hoff ignition device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2976485A (en) * 1959-03-30 1961-03-21 Bendix Corp Continuity testing device for explosive igniting circuits
NL7116040A (en) * 1970-12-04 1972-06-06
CA1193661A (en) * 1981-03-27 1985-09-17 Bohumil M.J. Plichta Apparatus for and a method of testing detonating systems
DE3427540A1 (en) * 1984-07-26 1986-02-06 Dr.Ing.H.C. F. Porsche Ag, 7000 Stuttgart FUSE CHECKING DEVICE

Also Published As

Publication number Publication date
FR2616548B1 (en) 1989-12-01
ES2029893T3 (en) 1992-10-01
EP0296015A1 (en) 1988-12-21
FR2616548A1 (en) 1988-12-16
DE3868150D1 (en) 1992-03-12

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