EP0004033A1 - Procédé pour égaliser l'enlèvement de matière au cours du polissage de plaquettes - Google Patents
Procédé pour égaliser l'enlèvement de matière au cours du polissage de plaquettes Download PDFInfo
- Publication number
- EP0004033A1 EP0004033A1 EP79100602A EP79100602A EP0004033A1 EP 0004033 A1 EP0004033 A1 EP 0004033A1 EP 79100602 A EP79100602 A EP 79100602A EP 79100602 A EP79100602 A EP 79100602A EP 0004033 A1 EP0004033 A1 EP 0004033A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- polishing
- plate
- pressure
- disks
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims abstract description 12
- 235000012431 wafers Nutrition 0.000 title abstract description 18
- 239000000463 material Substances 0.000 title description 3
- 238000005299 abrasion Methods 0.000 claims description 7
- 239000004744 fabric Substances 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 239000004566 building material Substances 0.000 abstract 1
- -1 polyethylene foams Chemical compound 0.000 description 10
- 239000004698 Polyethylene Substances 0.000 description 9
- 238000001816 cooling Methods 0.000 description 9
- 229920000573 polyethylene Polymers 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000004568 cement Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000006260 foam Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- 229920002323 Silicone foam Polymers 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002984 plastic foam Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
Definitions
- the invention relates to a method for equalizing the polishing removal of disks when polishing with polishing machines, which have a polishing plate covered with a polishing cloth, one or more polishing support plates, on the side facing the polishing plate, the polishing plate. Disks are cemented on, as well as pressure stamps that press the polishing carrier plates against the polishing plate covered with a polishing cloth.
- the layer sequences of different conductivity types required for the function of the individual components are produced by successive individual processes, starting from the flat surfaces of the single-crystal semiconductor wafers.
- Wavy, curved or wedge-shaped semiconductor wafers lead to blurring when exposing the photoresist applied to the wafer surface, in particular when using photolithographic methods. Components with a high circuit packing density can therefore no longer be produced from such panes.
- the tolerances with regard to the thickness, the wedge shape or the flatness of the semiconductor wafers used in the processes, which are still accepted by the component manufacturers, are shifting to ever smaller values.
- the slices with their flat - including a marking on the circumference of the slices to identify the crystallographic orientation of the respective slices materials is understood - cemented in the direction of the center of the carrier plate, this results in a wedge-shape perpendicular to the flat, with the flat coming to lie at the tip end of the wedge during the initial polishing runs up to about the tenth polishing run, while after about the thirtieth polishing run the flat is at thick end of the wedge lies. Due to this drive-dependent difference in thickness between the outer ring and the center ring, the roughly ten first polishing runs and the last polishing runs exceeding the number of thirty result in a relatively poor thickness tolerance of the polished discs.
- the measured wedge is generally greater, the greater the difference between the average thickness value in the outer ring and the average thickness value in the middle ring. The thickness value is determined in the center of each slice.
- the invention was therefore based on the object in the polishing process by means of suitable measures, an even pressure distribution and thus to all.
- Set discs with equivalent removal forces in order to be able to guarantee semiconductor wafers with small tolerances with regard to their thickness, taper and ripple.
- This object is achieved in that intermediate layers of soft, elastic bodies are inserted between the pressure stamp and the back of the carrier plate.
- Elastic bodies are generally understood to mean elastic materials which can be compressed and compressed, and which have the tendency to reverse the deformations which occur under the action of deforming forces.
- Particularly suitable are particularly soft, elastic bodies with pressure compensation chambers, for example graphite or silicone foams, plastic foams, such as polyethylene foams, where the pressure compensation chambers can be filled with either gas or liquid.
- Air cushion foils such as in particular polyethylene foils of different thicknesses with air knobs of different diameters, are preferably used.
- Figure 1 shows schematically the part of a conventional polishing machine that is relevant to the invention.
- Figure 2 shows the front of a carrier plate with cemented discs to be polished.
- Figures 3a to 3d show 4 differently shaped elastic intermediate layers.
- polishing semiconductor wafers 1 When polishing semiconductor wafers 1, for example, they are usually cemented in concentric rings onto a flat front side of a carrier plate 2, which is usually made of V2A steel or aluminum. Before the pressure stamp 3 is placed on the back of the carrier plate, a soft, elastic intermediate layer 4 is inserted.
- the pressure stamp 3 of conventional polishing machines is provided with a cooling system which dissipates the frictional heat that occurs during polishing.
- this cooling system consists of a cavity 5, through which a coolant, in the simplest case of water, flows through the feed pipes 6 and 7.
- the pressure with which the disks 1 to be polished are pressed against the polishing cloth 9 clamped on the polishing plate 8 is generated by the pressure cylinder 11 attached to the cylinder rod 10.
- the polishing plate 8 is set in rotation by means of a suitable drive.
- the system of the carrier plate 2 and the plunger 3 with the cooling system 5 (cooling pot), which is connected to the rigid pressure cylinder 11 by means of the sliding bearing 12, is rotated in the same direction.
- a carrier plate 2 is shown, on which silicon disks are cemented in three kit rings, the outer kit ring 13, the middle kit ring 14 and the inner kit ring 15.
- the number of kit rings generally depends on the size of the carrier plates used and the diameter of the discs to be polished.
- a support plate 2 is for example shown, are cemented in which semiconductor wafers in an outer cement ring 13, in a middle cement ring 14 and in an inner cement ring 1. 5
- the average thickness value in the outer kit ring 13 is, however, smaller than the average thickness value of the middle kit ring 14
- circular inserts with a diameter substantially smaller than the carrier plate diameter for example inserts as shown in Figure 3d, must be inserted .
- These deposits transfer the polishing pressure in the plate center. This results in an increase in the polishing removal in the inner plate area.
- there are smaller differences in the thickness values in the outer and middle kit ring and thus lead to an improvement in the thickness spread and in particular the wedge shape perpendicular to the flat.
- the removal in the inner plate area is increased, the smaller the diameter of these center inserts.
- the influences of the back of the carrier plate and the pressure stamp or the underside of the cooling pot can be largely eliminated.
- the influence of the polishing cloth can also be reduced by the choice of inexpensive insert forms, whereby a considerable improvement with regard to the scatter of thickness and the wedge shape of polished discs of a polishing carrier plate is achieved.
- each slice was measured in 5 points, namely in the middle and in four points, each separated by 90 ° on the circumference of the slice, starting in the middle of the flat.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2809274 | 1978-03-03 | ||
| DE19782809274 DE2809274A1 (de) | 1978-03-03 | 1978-03-03 | Verfahren zur vergleichmaessigung des polierabtrages von scheiben beim polieren |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP0004033A1 true EP0004033A1 (fr) | 1979-09-19 |
| EP0004033B1 EP0004033B1 (fr) | 1981-01-07 |
Family
ID=6033513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP79100602A Expired EP0004033B1 (fr) | 1978-03-03 | 1979-03-01 | Procédé pour égaliser l'enlèvement de matière au cours du polissage de plaquettes |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4270316A (fr) |
| EP (1) | EP0004033B1 (fr) |
| JP (1) | JPS54120490A (fr) |
| DE (2) | DE2809274A1 (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5980361A (en) * | 1996-12-12 | 1999-11-09 | Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag | Method and device for polishing semiconductor wafers |
| US6095898A (en) * | 1997-10-30 | 2000-08-01 | Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag | Process and device for polishing semiconductor wafers |
| US6404557B2 (en) * | 1999-09-10 | 2002-06-11 | Inviso, Inc. | Display illumination system |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5789551A (en) * | 1980-11-17 | 1982-06-03 | Toshiba Corp | Grinding process for sapphire wafer |
| US5040336A (en) * | 1986-01-15 | 1991-08-20 | The United States Of America As Represented By The Secretary Of The Air Force | Non-contact polishing |
| US4850157A (en) * | 1987-11-23 | 1989-07-25 | Magnetic Peripherals Inc. | Apparatus for guiding the flow of abrasive slurry over a lapping surface |
| US4930259A (en) * | 1988-02-19 | 1990-06-05 | Magnetic Perpherals Inc. | Magnetic disk substrate polishing assembly |
| US5193316A (en) * | 1991-10-29 | 1993-03-16 | Texas Instruments Incorporated | Semiconductor wafer polishing using a hydrostatic medium |
| DE4139205A1 (de) * | 1991-11-28 | 1993-06-03 | Wacker Chemitronic | Verfahren zur herstellung lagerstabiler oberflaechen von siliciumscheiben mit vorteilhaften oxidationseigenschaften |
| US5205082A (en) * | 1991-12-20 | 1993-04-27 | Cybeq Systems, Inc. | Wafer polisher head having floating retainer ring |
| US5472374A (en) * | 1992-08-10 | 1995-12-05 | Sumitomo Metal Mining Co., Ltd. | Polishing method and polishing device using the same |
| MY114512A (en) * | 1992-08-19 | 2002-11-30 | Rodel Inc | Polymeric substrate with polymeric microelements |
| US5562529A (en) * | 1992-10-08 | 1996-10-08 | Fujitsu Limited | Apparatus and method for uniformly polishing a wafer |
| US5377451A (en) * | 1993-02-23 | 1995-01-03 | Memc Electronic Materials, Inc. | Wafer polishing apparatus and method |
| US5443416A (en) * | 1993-09-09 | 1995-08-22 | Cybeq Systems Incorporated | Rotary union for coupling fluids in a wafer polishing apparatus |
| JP3311116B2 (ja) * | 1993-10-28 | 2002-08-05 | 株式会社東芝 | 半導体製造装置 |
| US5643053A (en) * | 1993-12-27 | 1997-07-01 | Applied Materials, Inc. | Chemical mechanical polishing apparatus with improved polishing control |
| JP3042293B2 (ja) * | 1994-02-18 | 2000-05-15 | 信越半導体株式会社 | ウエーハのポリッシング装置 |
| JPH07241764A (ja) * | 1994-03-04 | 1995-09-19 | Fujitsu Ltd | 研磨装置と研磨方法 |
| US5681215A (en) * | 1995-10-27 | 1997-10-28 | Applied Materials, Inc. | Carrier head design for a chemical mechanical polishing apparatus |
| US6024630A (en) * | 1995-06-09 | 2000-02-15 | Applied Materials, Inc. | Fluid-pressure regulated wafer polishing head |
| US6746565B1 (en) * | 1995-08-17 | 2004-06-08 | Semitool, Inc. | Semiconductor processor with wafer face protection |
| US5762544A (en) * | 1995-10-27 | 1998-06-09 | Applied Materials, Inc. | Carrier head design for a chemical mechanical polishing apparatus |
| USRE38854E1 (en) * | 1996-02-27 | 2005-10-25 | Ebara Corporation | Apparatus for and method for polishing workpiece |
| US5738568A (en) * | 1996-10-04 | 1998-04-14 | International Business Machines Corporation | Flexible tilted wafer carrier |
| US6036587A (en) * | 1996-10-10 | 2000-03-14 | Applied Materials, Inc. | Carrier head with layer of conformable material for a chemical mechanical polishing system |
| US5716258A (en) * | 1996-11-26 | 1998-02-10 | Metcalf; Robert L. | Semiconductor wafer polishing machine and method |
| US6442975B1 (en) | 1996-12-26 | 2002-09-03 | Hoya Corporation | Method of manufacturing thin-plate glass article, method of manufacturing glass substrate for information recording medium, and method of manufacturing magnetic recording medium |
| US5851140A (en) * | 1997-02-13 | 1998-12-22 | Integrated Process Equipment Corp. | Semiconductor wafer polishing apparatus with a flexible carrier plate |
| US6056632A (en) * | 1997-02-13 | 2000-05-02 | Speedfam-Ipec Corp. | Semiconductor wafer polishing apparatus with a variable polishing force wafer carrier head |
| US6244946B1 (en) | 1997-04-08 | 2001-06-12 | Lam Research Corporation | Polishing head with removable subcarrier |
| US6425812B1 (en) | 1997-04-08 | 2002-07-30 | Lam Research Corporation | Polishing head for chemical mechanical polishing using linear planarization technology |
| US5885135A (en) * | 1997-04-23 | 1999-03-23 | International Business Machines Corporation | CMP wafer carrier for preferential polishing of a wafer |
| TW375550B (en) * | 1997-06-19 | 1999-12-01 | Komatsu Denshi Kinzoku Kk | Polishing apparatus for semiconductor wafer |
| US5931719A (en) * | 1997-08-25 | 1999-08-03 | Lsi Logic Corporation | Method and apparatus for using pressure differentials through a polishing pad to improve performance in chemical mechanical polishing |
| US5975998A (en) * | 1997-09-26 | 1999-11-02 | Memc Electronic Materials , Inc. | Wafer processing apparatus |
| US6336845B1 (en) | 1997-11-12 | 2002-01-08 | Lam Research Corporation | Method and apparatus for polishing semiconductor wafers |
| US5948699A (en) * | 1997-11-21 | 1999-09-07 | Sibond, L.L.C. | Wafer backing insert for free mount semiconductor polishing apparatus and process |
| US5993302A (en) * | 1997-12-31 | 1999-11-30 | Applied Materials, Inc. | Carrier head with a removable retaining ring for a chemical mechanical polishing apparatus |
| US6080050A (en) * | 1997-12-31 | 2000-06-27 | Applied Materials, Inc. | Carrier head including a flexible membrane and a compliant backing member for a chemical mechanical polishing apparatus |
| US6531397B1 (en) | 1998-01-09 | 2003-03-11 | Lsi Logic Corporation | Method and apparatus for using across wafer back pressure differentials to influence the performance of chemical mechanical polishing |
| US6020262A (en) * | 1998-03-06 | 2000-02-01 | Siemens Aktiengesellschaft | Methods and apparatus for chemical mechanical planarization (CMP) of a semiconductor wafer |
| US6129610A (en) * | 1998-08-14 | 2000-10-10 | International Business Machines Corporation | Polish pressure modulation in CMP to preferentially polish raised features |
| US6231428B1 (en) | 1999-03-03 | 2001-05-15 | Mitsubishi Materials Corporation | Chemical mechanical polishing head assembly having floating wafer carrier and retaining ring |
| US6368189B1 (en) * | 1999-03-03 | 2002-04-09 | Mitsubishi Materials Corporation | Apparatus and method for chemical-mechanical polishing (CMP) head having direct pneumatic wafer polishing pressure |
| US6431968B1 (en) | 1999-04-22 | 2002-08-13 | Applied Materials, Inc. | Carrier head with a compressible film |
| US6431959B1 (en) * | 1999-12-20 | 2002-08-13 | Lam Research Corporation | System and method of defect optimization for chemical mechanical planarization of polysilicon |
| KR100780099B1 (ko) * | 2000-03-29 | 2007-11-29 | 신에쯔 한도타이 가부시키가이샤 | 연마용 워크지지반, 연마장치 및 연마방법 |
| US6666756B1 (en) | 2000-03-31 | 2003-12-23 | Lam Research Corporation | Wafer carrier head assembly |
| US20060180486A1 (en) * | 2003-04-21 | 2006-08-17 | Bennett David W | Modular panel and storage system for flat items such as media discs and holders therefor |
| US11691241B1 (en) * | 2019-08-05 | 2023-07-04 | Keltech Engineering, Inc. | Abrasive lapping head with floating and rigid workpiece carrier |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DD29614A (fr) * | ||||
| US2565590A (en) * | 1948-03-12 | 1951-08-28 | Earl J Bullard | Lapping machine |
| US3631634A (en) * | 1970-01-26 | 1972-01-04 | John L Weber | Polishing machine |
| US3888053A (en) * | 1973-05-29 | 1975-06-10 | Rca Corp | Method of shaping semiconductor workpiece |
| DE2608427A1 (de) * | 1976-03-01 | 1977-09-08 | Wacker Chemitronic | Verfahren zum aufkitten von halbleiterscheiben |
| DE2712521A1 (de) * | 1977-03-22 | 1978-09-28 | Wacker Chemitronic | Verfahren zum aufkitten von scheiben |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1014873B (de) | 1953-01-13 | 1957-08-29 | Hahn & Kolb | Vorrichtung zum einseitigen Laeppen von Werkstuecken auf Laeppmaschinen |
| US3449870A (en) * | 1967-01-24 | 1969-06-17 | Geoscience Instr Corp | Method and apparatus for mounting thin elements |
| US3603042A (en) * | 1967-09-20 | 1971-09-07 | Speedfam Corp | Polishing machine |
| US3754359A (en) * | 1970-09-16 | 1973-08-28 | Spam D Avray | Abrasion tools |
| US4020600A (en) * | 1976-08-13 | 1977-05-03 | Spitfire Tool & Machine Co., Inc. | Polishing fixture |
| US4132037A (en) * | 1977-02-28 | 1979-01-02 | Siltec Corporation | Apparatus for polishing semiconductor wafers |
-
1978
- 1978-03-03 DE DE19782809274 patent/DE2809274A1/de not_active Withdrawn
- 1978-12-27 JP JP16028078A patent/JPS54120490A/ja active Pending
-
1979
- 1979-02-23 US US06/014,458 patent/US4270316A/en not_active Expired - Lifetime
- 1979-03-01 DE DE7979100602T patent/DE2960114D1/de not_active Expired
- 1979-03-01 EP EP79100602A patent/EP0004033B1/fr not_active Expired
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DD29614A (fr) * | ||||
| US2565590A (en) * | 1948-03-12 | 1951-08-28 | Earl J Bullard | Lapping machine |
| US3631634A (en) * | 1970-01-26 | 1972-01-04 | John L Weber | Polishing machine |
| US3888053A (en) * | 1973-05-29 | 1975-06-10 | Rca Corp | Method of shaping semiconductor workpiece |
| DE2608427A1 (de) * | 1976-03-01 | 1977-09-08 | Wacker Chemitronic | Verfahren zum aufkitten von halbleiterscheiben |
| DE2712521A1 (de) * | 1977-03-22 | 1978-09-28 | Wacker Chemitronic | Verfahren zum aufkitten von scheiben |
Non-Patent Citations (1)
| Title |
|---|
| SOLID STATE TECHNOLOGY, Band 20, Oktober 1977, Long Island N.Y., A.C. BONORA "Flex-Mount Polishing of Silicon Wafers", Seiten 55 bis 58 * Seite 57, rechte Spalte unten, Seite 58 * * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6433935B2 (en) | 1996-07-02 | 2002-08-13 | Three-Five Systems, Inc. | Display illumination system |
| US5980361A (en) * | 1996-12-12 | 1999-11-09 | Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag | Method and device for polishing semiconductor wafers |
| US6095898A (en) * | 1997-10-30 | 2000-08-01 | Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag | Process and device for polishing semiconductor wafers |
| US6404557B2 (en) * | 1999-09-10 | 2002-06-11 | Inviso, Inc. | Display illumination system |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0004033B1 (fr) | 1981-01-07 |
| DE2960114D1 (en) | 1981-02-26 |
| US4270316A (en) | 1981-06-02 |
| JPS54120490A (en) | 1979-09-19 |
| DE2809274A1 (de) | 1979-09-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
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