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DE69316628D1 - Flüchtige Speicherzelle - Google Patents

Flüchtige Speicherzelle

Info

Publication number
DE69316628D1
DE69316628D1 DE69316628T DE69316628T DE69316628D1 DE 69316628 D1 DE69316628 D1 DE 69316628D1 DE 69316628 T DE69316628 T DE 69316628T DE 69316628 T DE69316628 T DE 69316628T DE 69316628 D1 DE69316628 D1 DE 69316628D1
Authority
DE
Germany
Prior art keywords
memory cell
volatile memory
volatile
cell
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69316628T
Other languages
English (en)
Other versions
DE69316628T2 (de
Inventor
Alexander Kalnitsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
STMicroelectronics lnc USA
Original Assignee
SGS Thomson Microelectronics SA
SGS Thomson Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA, SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics SA
Application granted granted Critical
Publication of DE69316628D1 publication Critical patent/DE69316628D1/de
Publication of DE69316628T2 publication Critical patent/DE69316628T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/91—Controlling charging state at semiconductor-insulator interface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/953—Making radiation resistant device

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
DE69316628T 1993-11-29 1993-11-29 Flüchtige Speicherzelle Expired - Fee Related DE69316628T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP93420474A EP0655788B1 (de) 1993-11-29 1993-11-29 Flüchtige Speicherzelle

Publications (2)

Publication Number Publication Date
DE69316628D1 true DE69316628D1 (de) 1998-02-26
DE69316628T2 DE69316628T2 (de) 1998-05-07

Family

ID=8214793

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69316628T Expired - Fee Related DE69316628T2 (de) 1993-11-29 1993-11-29 Flüchtige Speicherzelle

Country Status (4)

Country Link
US (2) US5608250A (de)
EP (1) EP0655788B1 (de)
JP (2) JP2770759B2 (de)
DE (1) DE69316628T2 (de)

Families Citing this family (97)

* Cited by examiner, † Cited by third party
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DE19600422C1 (de) * 1996-01-08 1997-08-21 Siemens Ag Elektrisch programmierbare Speicherzellenanordnung und Verfahren zu deren Herstellung
DE19632834C2 (de) * 1996-08-14 1998-11-05 Siemens Ag Verfahren zur Herstellung feiner Strukturen und dessen Verwendung zur Herstellung einer Maske und eines MOS-Transistors
KR100265692B1 (ko) * 1997-07-03 2000-09-15 윤덕용 에이에프엠을이용한비휘발성메모리소자와해당메모리소자의운영방법
CN100524633C (zh) * 1998-01-26 2009-08-05 索尼株式会社 半导体装置的制造方法
JP4538693B2 (ja) * 1998-01-26 2010-09-08 ソニー株式会社 メモリ素子およびその製造方法
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US6754104B2 (en) * 2000-06-22 2004-06-22 Progressant Technologies, Inc. Insulated-gate field-effect transistor integrated with negative differential resistance (NDR) FET
US6479862B1 (en) * 2000-06-22 2002-11-12 Progressant Technologies, Inc. Charge trapping device and method for implementing a transistor having a negative differential resistance mode
US6559470B2 (en) 2000-06-22 2003-05-06 Progressed Technologies, Inc. Negative differential resistance field effect transistor (NDR-FET) and circuits using the same
US6596617B1 (en) 2000-06-22 2003-07-22 Progressant Technologies, Inc. CMOS compatible process for making a tunable negative differential resistance (NDR) device
US6594193B2 (en) 2000-06-22 2003-07-15 Progressent Technologies, Inc. Charge pump for negative differential resistance transistor
US6512274B1 (en) * 2000-06-22 2003-01-28 Progressant Technologies, Inc. CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same
US6724655B2 (en) * 2000-06-22 2004-04-20 Progressant Technologies, Inc. Memory cell using negative differential resistance field effect transistors
DE10106606B4 (de) * 2001-02-13 2006-11-02 Tobias Meyer Modifizierte Floating Gate Transistor Struktur mit negativem differentiellen Widerstand
JP2002358795A (ja) * 2001-05-31 2002-12-13 Hitachi Ltd 不揮発性半導体記憶装置および製造方法
TWI230392B (en) * 2001-06-18 2005-04-01 Innovative Silicon Sa Semiconductor device
WO2003019643A1 (fr) * 2001-08-23 2003-03-06 Nec Corporation Dispositif semi-conducteur comportant un film isolant presentant une permittivite elevee et son procede de production
US6894327B1 (en) 2001-12-21 2005-05-17 Progressant Technologies, Inc. Negative differential resistance pull up element
US7453083B2 (en) 2001-12-21 2008-11-18 Synopsys, Inc. Negative differential resistance field effect transistor for implementing a pull up element in a memory cell
EP1355316B1 (de) * 2002-04-18 2007-02-21 Innovative Silicon SA Datenspeichergerät sowie Verfahren zum Auffrischen der auf einem solchen Gerät gespeicherten Daten
EP1357603A3 (de) 2002-04-18 2004-01-14 Innovative Silicon SA Halbleiterbauelement
US7098472B2 (en) 2002-06-28 2006-08-29 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US6795337B2 (en) 2002-06-28 2004-09-21 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US7095659B2 (en) 2002-06-28 2006-08-22 Progressant Technologies, Inc. Variable voltage supply bias and methods for negative differential resistance (NDR) based memory device
US6912151B2 (en) 2002-06-28 2005-06-28 Synopsys, Inc. Negative differential resistance (NDR) based memory device with reduced body effects
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US6847562B2 (en) * 2002-06-28 2005-01-25 Progressant Technologies, Inc. Enhanced read and write methods for negative differential resistance (NDR) based memory device
US6567292B1 (en) 2002-06-28 2003-05-20 Progressant Technologies, Inc. Negative differential resistance (NDR) element and memory with reduced soft error rate
US6864104B2 (en) 2002-06-28 2005-03-08 Progressant Technologies, Inc. Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects
TWI305046B (de) * 2002-09-09 2009-01-01 Macronix Int Co Ltd
FR2846795A1 (fr) 2002-11-05 2004-05-07 St Microelectronics Sa Procede de memorisation d'une donnee binaire dans une cellule-memoire d'un circuit integre de memoire, circuit integre correspondant et procede de fabrication
US6849483B2 (en) 2002-12-09 2005-02-01 Progressant Technologies, Inc. Charge trapping device and method of forming the same
US6980467B2 (en) 2002-12-09 2005-12-27 Progressant Technologies, Inc. Method of forming a negative differential resistance device
US6979580B2 (en) 2002-12-09 2005-12-27 Progressant Technologies, Inc. Process for controlling performance characteristics of a negative differential resistance (NDR) device
US6806117B2 (en) 2002-12-09 2004-10-19 Progressant Technologies, Inc. Methods of testing/stressing a charge trapping device
US6812084B2 (en) * 2002-12-09 2004-11-02 Progressant Technologies, Inc. Adaptive negative differential resistance device
US7012833B2 (en) 2002-12-09 2006-03-14 Progressant Technologies, Inc. Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs)
US7005711B2 (en) 2002-12-20 2006-02-28 Progressant Technologies, Inc. N-channel pull-up element and logic circuit
US6908833B1 (en) * 2003-02-14 2005-06-21 National Semiconductor Corporation Shallow self isolated doped implanted silicon process
US20040228168A1 (en) * 2003-05-13 2004-11-18 Richard Ferrant Semiconductor memory device and method of operating same
KR100540478B1 (ko) * 2004-03-22 2006-01-11 주식회사 하이닉스반도체 전하 트랩을 갖는 게이트유전체를 포함한 휘발성 메모리셀 트랜지스터 및 그 제조 방법
US7301803B2 (en) * 2004-12-22 2007-11-27 Innovative Silicon S.A. Bipolar reading technique for a memory cell having an electrically floating body transistor
US7457180B2 (en) * 2005-05-27 2008-11-25 Agere Systems Inc. Method and apparatus for storing data in a write-once non-volatile memory
US20070023833A1 (en) * 2005-07-28 2007-02-01 Serguei Okhonin Method for reading a memory cell having an electrically floating body transistor, and memory cell and array implementing same
US7606066B2 (en) * 2005-09-07 2009-10-20 Innovative Silicon Isi Sa Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
US7683430B2 (en) * 2005-12-19 2010-03-23 Innovative Silicon Isi Sa Electrically floating body memory cell and array, and method of operating or controlling same
US7542345B2 (en) * 2006-02-16 2009-06-02 Innovative Silicon Isi Sa Multi-bit memory cell having electrically floating body transistor, and method of programming and reading same
US7492632B2 (en) * 2006-04-07 2009-02-17 Innovative Silicon Isi Sa Memory array having a programmable word length, and method of operating same
US7606098B2 (en) 2006-04-18 2009-10-20 Innovative Silicon Isi Sa Semiconductor memory array architecture with grouped memory cells, and method of controlling same
US7933142B2 (en) * 2006-05-02 2011-04-26 Micron Technology, Inc. Semiconductor memory cell and array using punch-through to program and read same
US8069377B2 (en) * 2006-06-26 2011-11-29 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating the same
US7542340B2 (en) * 2006-07-11 2009-06-02 Innovative Silicon Isi Sa Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
WO2008090475A2 (en) 2007-01-26 2008-07-31 Innovative Silicon S.A. Floating-body dram transistor comprising source/drain regions separated from the gated body region
US7652923B2 (en) * 2007-02-02 2010-01-26 Macronix International Co., Ltd. Semiconductor device and memory and method of operating thereof
WO2009031052A2 (en) 2007-03-29 2009-03-12 Innovative Silicon S.A. Zero-capacitor (floating body) random access memory circuits with polycide word lines and manufacturing methods therefor
US8064274B2 (en) 2007-05-30 2011-11-22 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8085594B2 (en) 2007-06-01 2011-12-27 Micron Technology, Inc. Reading technique for memory cell with electrically floating body transistor
US8329535B2 (en) * 2007-06-11 2012-12-11 Macronix International Co., Ltd. Multi-level-cell trapping DRAM
WO2009039169A1 (en) 2007-09-17 2009-03-26 Innovative Silicon S.A. Refreshing data of memory cells with electrically floating body transistors
US7848148B2 (en) * 2007-10-18 2010-12-07 Macronix International Co., Ltd. One-transistor cell semiconductor on insulator random access memory
US8536628B2 (en) 2007-11-29 2013-09-17 Micron Technology, Inc. Integrated circuit having memory cell array including barriers, and method of manufacturing same
US8349662B2 (en) * 2007-12-11 2013-01-08 Micron Technology, Inc. Integrated circuit having memory cell array, and method of manufacturing same
US8773933B2 (en) 2012-03-16 2014-07-08 Micron Technology, Inc. Techniques for accessing memory cells
US8014195B2 (en) 2008-02-06 2011-09-06 Micron Technology, Inc. Single transistor memory cell
US8189376B2 (en) * 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
US7957206B2 (en) * 2008-04-04 2011-06-07 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
US20090303794A1 (en) * 2008-06-04 2009-12-10 Macronix International Co., Ltd. Structure and Method of A Field-Enhanced Charge Trapping-DRAM
US7947543B2 (en) 2008-09-25 2011-05-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US7933140B2 (en) 2008-10-02 2011-04-26 Micron Technology, Inc. Techniques for reducing a voltage swing
US7924630B2 (en) * 2008-10-15 2011-04-12 Micron Technology, Inc. Techniques for simultaneously driving a plurality of source lines
US8223574B2 (en) * 2008-11-05 2012-07-17 Micron Technology, Inc. Techniques for block refreshing a semiconductor memory device
US8213226B2 (en) * 2008-12-05 2012-07-03 Micron Technology, Inc. Vertical transistor memory cell and array
US8319294B2 (en) * 2009-02-18 2012-11-27 Micron Technology, Inc. Techniques for providing a source line plane
US8710566B2 (en) 2009-03-04 2014-04-29 Micron Technology, Inc. Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
US20100238743A1 (en) * 2009-03-23 2010-09-23 James Pan FAST EMBEDDED BiCMOS-THYRISTOR LATCH-UP NONVOLATILE MEMORY
KR20120006516A (ko) 2009-03-31 2012-01-18 마이크론 테크놀로지, 인크. 반도체 메모리 디바이스를 제공하기 위한 기술들
EP2244306B1 (de) 2009-04-22 2014-05-14 Taiwan Semiconductor Manufacturing Co., Ltd. Speicherzelle, Anordnung und Verfahren zur Herstellung einer Speicherzelle
US8139418B2 (en) 2009-04-27 2012-03-20 Micron Technology, Inc. Techniques for controlling a direct injection semiconductor memory device
US8508994B2 (en) 2009-04-30 2013-08-13 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
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US9076543B2 (en) 2009-07-27 2015-07-07 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
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Also Published As

Publication number Publication date
EP0655788B1 (de) 1998-01-21
US5608250A (en) 1997-03-04
JP2770759B2 (ja) 1998-07-02
JP2998728B2 (ja) 2000-01-11
DE69316628T2 (de) 1998-05-07
EP0655788A1 (de) 1995-05-31
JPH07211797A (ja) 1995-08-11
US5633178A (en) 1997-05-27
JPH10154758A (ja) 1998-06-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee