DE69223534D1 - Trockenätzverfahren und Anwendung davon - Google Patents

Trockenätzverfahren und Anwendung davon

Info

Publication number: DE69223534D1
Authority: DE; Germany
Prior art keywords: application; etching process; dry etching; dry; etching
Prior art date: 1991-03-22
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69223534T

Other languages

English (en)

Other versions

DE69223534T2 (de

Inventor

Masaru Koeda

Tetsuya Nagano

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Shimadzu Corp

Original Assignee

Shimadzu Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-03-22

Filing date

1992-03-20

Publication date

1998-01-29

1991-03-22 Priority claimed from JP3057524A external-priority patent/JP2661390B2/ja

1991-04-25 Priority claimed from JP3094518A external-priority patent/JPH0830764B2/ja

1992-03-20 Application filed by Shimadzu Corp filed Critical Shimadzu Corp

1998-01-29 Application granted granted Critical

1998-01-29 Publication of DE69223534D1 publication Critical patent/DE69223534D1/de

1998-07-09 Publication of DE69223534T2 publication Critical patent/DE69223534T2/de

2012-03-21 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
- C04B41/5338—Etching
- C04B41/5346—Dry etching
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
- H10P50/00—

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Materials Engineering (AREA)
Organic Chemistry (AREA)
General Physics & Mathematics (AREA)
Structural Engineering (AREA)
Optics & Photonics (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Geochemistry & Mineralogy (AREA)
Microelectronics & Electronic Packaging (AREA)
Life Sciences & Earth Sciences (AREA)
Manufacturing & Machinery (AREA)
Diffracting Gratings Or Hologram Optical Elements (AREA)
Drying Of Semiconductors (AREA)

DE69223534T 1991-03-22 1992-03-20 Trockenätzverfahren und Anwendung davon Expired - Fee Related DE69223534T2 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP3057524A JP2661390B2 (ja)	1991-03-22	1991-03-22	ＳｉＣのエッチング方法
JP3094518A JPH0830764B2 (ja)	1991-04-25	1991-04-25	回折格子の製造方法

Publications (2)

Publication Number	Publication Date
DE69223534D1 true DE69223534D1 (de)	1998-01-29
DE69223534T2 DE69223534T2 (de)	1998-07-09

Family

ID=26398586

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69223534T Expired - Fee Related DE69223534T2 (de)	1991-03-22	1992-03-20	Trockenätzverfahren und Anwendung davon

Country Status (5)

Country	Link
US (1)	US5234537A (de)
EP (1)	EP0504912B1 (de)
CN (1)	CN1036868C (de)
DE (1)	DE69223534T2 (de)
SG (1)	SG49673A1 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH07117605B2 (ja) *	1992-03-13	1995-12-18	日本ピラー工業株式会社	回折格子
US5559367A (en) *	1994-07-12	1996-09-24	International Business Machines Corporation	Diamond-like carbon for use in VLSI and ULSI interconnect systems
US5770120A (en) *	1994-12-09	1998-06-23	Olympus Optical Co., Ltd.	Method of manufacturing die and optical element performed by using the die
FR2730725B1 (fr) *	1995-02-16	1997-11-14	Saverglass Verrerie	Procede d'attaque superficielle d'une surface d'un materiau vitreux multicomposants par plasma
JP3407477B2 (ja) *	1995-06-08	2003-05-19	松下電器産業株式会社	位相格子とその作製方法並びに光学式エンコーダ
US5571374A (en) *	1995-10-02	1996-11-05	Motorola	Method of etching silicon carbide
US5843847A (en) *	1996-04-29	1998-12-01	Applied Materials, Inc.	Method for etching dielectric layers with high selectivity and low microloading
US5814563A (en) *	1996-04-29	1998-09-29	Applied Materials, Inc.	Method for etching dielectric using fluorohydrocarbon gas, NH3 -generating gas, and carbon-oxygen gas
IL124592A (en) *	1997-05-23	2002-07-25	Gersan Ets	Method of marking a gemstone or diamond
US6001268A (en) *	1997-06-05	1999-12-14	International Business Machines Corporation	Reactive ion etching of alumina/TiC substrates
US6506315B2 (en) *	1998-12-23	2003-01-14	Illinois Tool Works, Inc.	Method of reproducing colored images on a heat transferable decorative, at least partially metallized and/or 2 D or 3 D holographic film
RU2163409C1 (ru) *	2000-07-21	2001-02-20	Санкт-Петербургский государственный электротехнический университет	СПОСОБ МИКРОПРОФИЛИРОВАНИЯ КОМПОЗИЦИИ "SiC-AlN"
US20060216478A1 (en) *	2000-07-26	2006-09-28	Shimadzu Corporation	Grating, negative and replica gratings of the grating, and method of manufacturing the same
US7432207B2 (en) *	2001-08-31	2008-10-07	Tokyo Electron Limited	Method for etching object to be processed
JP2003077896A (ja) *	2001-08-31	2003-03-14	Tokyo Electron Ltd	エッチング方法
JP2006024749A (ja) *	2004-07-08	2006-01-26	Toyo Tanso Kk	炭化珪素単結晶及びそのエッチング方法
DE102004049233A1 (de) *	2004-10-09	2006-04-20	Schott Ag	Verfahren zur Mikrostrukturierung von Substraten aus Flachglas
JP5061506B2 (ja) *	2006-06-05	2012-10-31	富士電機株式会社	炭化珪素半導体装置の製造方法
JP5509520B2 (ja) *	2006-12-21	2014-06-04	富士電機株式会社	炭化珪素半導体装置の製造方法
WO2011068884A2 (en)	2009-12-01	2011-06-09	University Of Massachusetts	A system for producing patterned silicon carbide structures
CN102468372A (zh) *	2010-11-09	2012-05-23	山东华光光电子有限公司	GaN基垂直结构LED中SiC衬底的剥离方法
CN102360093A (zh)	2011-10-19	2012-02-22	苏州大学	一种全息闪耀光栅制作方法
CN102832167B (zh) *	2012-06-21	2016-01-20	上海华力微电子有限公司	金属硬掩膜层制备方法以及半导体制造方法
CN103513489B (zh) *	2012-06-28	2016-12-21	中国科学院理化技术研究所	一种激光承载及光束变换器件
CN102925969B (zh) *	2012-11-12	2016-01-06	上海应用技术学院	图形化的SiC衬底
WO2014190801A1 (en) *	2013-05-30	2014-12-04	Goldway Technology Limited	Method of marking material and system therefore, and material marked according to same method
US10442727B2 (en) *	2017-01-05	2019-10-15	Magic Leap, Inc.	Patterning of high refractive index glasses by plasma etching
TWI767081B (zh) *	2017-10-30	2022-06-11	美商菲絲博克科技有限公司	利用化學輔助反應離子束蝕刻製造傾斜表面浮雕結構的系統及方法
CN108439329A (zh) *	2018-03-14	2018-08-24	河南科技大学	一种微纳模具型槽的制备方法
CN109143437B (zh) *	2018-10-12	2021-03-02	宁波源禄光电有限公司	一种机械切削-离子束刻蚀制备光栅方法
JP7498191B2 (ja)	2019-03-12	2024-06-11	マジックリープ，インコーポレイテッド	高屈折率材料を伴う導波管およびその加工方法
CN113687460B (zh) *	2021-07-29	2023-06-06	中国工程物理研究院激光聚变研究中心	一种边界快速延伸的声波等离子体光栅产生方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5275341A (en) *	1975-12-19	1977-06-24	Rikagaku Kenkyusho	Method of producing echelette grating
US4155627A (en) *	1976-02-02	1979-05-22	Rca Corporation	Color diffractive subtractive filter master recording comprising a plurality of superposed two-level relief patterns on the surface of a substrate
US4124473A (en) *	1977-06-17	1978-11-07	Rca Corporation	Fabrication of multi-level relief patterns in a substrate
JPS56169776A (en) *	1980-06-03	1981-12-26	Tokyo Ohka Kogyo Co Ltd	Selective dry etching method
DE3615519A1 (de) *	1986-05-07	1987-11-12	Siemens Ag	Verfahren zum erzeugen von kontaktloechern mit abgeschraegten flanken in zwischenoxidschichten
US4865685A (en) *	1987-11-03	1989-09-12	North Carolina State University	Dry etching of silicon carbide
US4981551A (en) *	1987-11-03	1991-01-01	North Carolina State University	Dry etching of silicon carbide
US5005075A (en) *	1989-01-31	1991-04-02	Hoya Corporation	X-ray mask and method of manufacturing an X-ray mask
EP0386518B1 (de) *	1989-02-23	1999-06-09	Seiko Epson Corporation	Ätzverfahren für Verbindungshalbleiter
CA2029674C (en) *	1989-11-13	1997-06-10	Keiji Sakai	Manufacturing method of optical diffraction grating element

1992
- 1992-03-20 US US07/854,684 patent/US5234537A/en not_active Expired - Fee Related
- 1992-03-20 DE DE69223534T patent/DE69223534T2/de not_active Expired - Fee Related
- 1992-03-20 EP EP92104852A patent/EP0504912B1/de not_active Expired - Lifetime
- 1992-03-20 SG SG1996003773A patent/SG49673A1/en unknown
- 1992-03-21 CN CN92102953A patent/CN1036868C/zh not_active Expired - Fee Related

Also Published As

Publication number	Publication date
EP0504912B1 (de)	1997-12-17
DE69223534T2 (de)	1998-07-09
EP0504912A1 (de)	1992-09-23
SG49673A1 (en)	1998-06-15
CN1066512A (zh)	1992-11-25
US5234537A (en)	1993-08-10
CN1036868C (zh)	1997-12-31

Publication	Publication Date	Title
DE69223534D1 (de)	1998-01-29	Trockenätzverfahren und Anwendung davon
DE69415068D1 (de)	1999-01-21	Mikromotor und Herstellungsverfahren desselben
DE69322807D1 (de)	1999-02-11	Zahnprothese und Herstellungsverfahren
DE69228855D1 (de)	1999-05-12	Kondensator und Herstellungsverfahren
DE69418962D1 (de)	1999-07-15	Vernetztes Silikonen-Pulver und Herstellungsverfahren davon
DE69406723D1 (de)	1997-12-18	Organopolysiloxan und Herstellungsverfahren
DE69415157D1 (de)	1999-01-21	Elektrochirurgischer prozessor und anwendung
BR9102840A (pt)	1992-04-28	Produto absorvente e metodo de fazer o mesmo
DE69124571D1 (de)	1997-03-20	Emulgierverfahren und -vorrichtung
DE69012873D1 (de)	1994-11-03	Negativ-Photoresist und seine Anwendung.
DE69525188D1 (de)	2002-03-14	Hoch- und Niederspannungs-CMOS-Bauteil und Herstellungsverfahren
DE69522514D1 (de)	2001-10-11	Halbleiteranordnung und Herstellungsverfahren
DE69228333D1 (de)	1999-03-18	Trockenätzverfahren
DE69527330D1 (de)	2002-08-14	Halbleiteranordnung und Herstellungsverfahren
DE69526539D1 (de)	2002-06-06	Halbleiteranordnung und Herstellungsverfahren
DE69525795D1 (de)	2002-04-18	Halbleiteranordnung und Herstellungsverfahren
DE69214196D1 (de)	1996-11-07	Klare gelförmige Kosmetika und Herstellungsverfahren
FI905484A7 (fi)	1992-05-06	Kuivausmenetelmä ja -laite
DE69126149D1 (de)	1997-06-26	Trockenätzverfahren
DE69307266D1 (de)	1997-02-20	Trockenflussverfahren- und Vorrichtung
PT99693A (pt)	1994-01-31	Secador de cabelo mural
DE69208810D1 (de)	1996-04-11	Photoresist und Ätzverfahren
DE69120842D1 (de)	1996-08-22	Photolackzusammensetzung und Strukturierungsmethode
DE69320882D1 (de)	1998-10-15	Entwicklungsgerät und -verfahren
DE69309572D1 (de)	1997-05-15	Auftragsverfahren und -vorrichtung

Legal Events

Date	Code	Title	Description
1999-01-21	8364	No opposition during term of opposition
2006-01-05	8339	Ceased/non-payment of the annual fee