[go: up one dir, main page]

DE69909987D1 - Sputtertarget, transparenter leitender film und verfahren zu dessen herstellung - Google Patents

Sputtertarget, transparenter leitender film und verfahren zu dessen herstellung

Info

Publication number
DE69909987D1
DE69909987D1 DE69909987T DE69909987T DE69909987D1 DE 69909987 D1 DE69909987 D1 DE 69909987D1 DE 69909987 T DE69909987 T DE 69909987T DE 69909987 T DE69909987 T DE 69909987T DE 69909987 D1 DE69909987 D1 DE 69909987D1
Authority
DE
Germany
Prior art keywords
sputtertarget
production
leading film
transparent leading
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69909987T
Other languages
English (en)
Other versions
DE69909987T2 (de
Inventor
Akira Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Application granted granted Critical
Publication of DE69909987D1 publication Critical patent/DE69909987D1/de
Publication of DE69909987T2 publication Critical patent/DE69909987T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
DE69909987T 1998-03-05 1999-03-04 Sputtertarget, transparenter leitender film und verfahren zu dessen herstellung Expired - Fee Related DE69909987T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5389998 1998-03-05
JP5389998 1998-03-05
PCT/JP1999/001046 WO1999045163A1 (en) 1998-03-05 1999-03-04 Sputtering target, transparent conductive film, and method for producing the same

Publications (2)

Publication Number Publication Date
DE69909987D1 true DE69909987D1 (de) 2003-09-04
DE69909987T2 DE69909987T2 (de) 2004-05-27

Family

ID=12955578

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69909987T Expired - Fee Related DE69909987T2 (de) 1998-03-05 1999-03-04 Sputtertarget, transparenter leitender film und verfahren zu dessen herstellung

Country Status (4)

Country Link
US (1) US6596135B1 (de)
EP (1) EP1063317B1 (de)
DE (1) DE69909987T2 (de)
WO (1) WO1999045163A1 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10209821A1 (de) 2002-03-06 2003-09-25 Biotechnologie Ges Mittelhesse Kopplung von Proteinen an ein modifiziertes Polysaccharid
DE10209822A1 (de) * 2002-03-06 2003-09-25 Biotechnologie Ges Mittelhesse Kopplung niedermolekularer Substanzen an ein modifiziertes Polysaccharid
JP3679771B2 (ja) * 2002-03-19 2005-08-03 三洋電機株式会社 光起電力装置、及び光起電力装置の製造方法
CN100348618C (zh) * 2002-09-11 2007-11-14 弗雷泽纽斯卡比德国有限公司 生产羟烷基淀粉衍生物的方法
DE10306925A1 (de) * 2003-02-19 2004-09-02 GfE Gesellschaft für Elektrometallurgie mbH PVD-Beschichtungsmaterial
DE10329338A1 (de) * 2003-06-30 2005-02-10 FNE Forschungsinstitut für Nichteisen-Metalle Freiberg GmbH Sinterkörper aus ZnO
WO2005014655A2 (en) * 2003-08-08 2005-02-17 Fresenius Kabi Deutschland Gmbh Conjugates of hydroxyalkyl starch and a protein
HRP20110056T1 (hr) * 2003-08-08 2011-02-28 Fresenius Kabi Deutschland Gmbh Konjugati hidroksialkil škroba i g-csf
EP2279752A3 (de) * 2004-03-11 2011-08-24 Fresenius Kabi Deutschland GmbH Konjugate von hydroxyalkylstärke und einem protein hergestellt durch native chemische ligation
EA010501B1 (ru) * 2004-03-11 2008-10-30 Фрезениус Каби Дойчланд Гмбх Конъюгаты гидроксиалкилкрахмала и белка, полученные восстановительным аминированием
US7537677B2 (en) * 2005-01-19 2009-05-26 Guardian Industries Corp. Method of making low-E coating using ceramic zinc inclusive target, and target used in same
KR20070110902A (ko) * 2005-03-11 2007-11-20 프레제니우스 카비 도이치란트 게엠베하 비활성 출발 물질로부터 생물활성 당단백질의 생산
US7597962B2 (en) * 2005-06-07 2009-10-06 Centre Luxembourgeois De Recherches Pour Le Verre Et La Ceramique S.A. (C.R.V.C.) Coated article with IR reflecting layer and method of making same
EP1762250A1 (de) * 2005-09-12 2007-03-14 Fresenius Kabi Deutschland GmbH Konjugate welche durch chemische Ligation zwischen Hydroxyalkylstärken und aktiven Substanzen mit Bildung eines Thiazolidin-Ringes entstehen
US7964788B2 (en) 2006-11-02 2011-06-21 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8012317B2 (en) * 2006-11-02 2011-09-06 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US8076571B2 (en) 2006-11-02 2011-12-13 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8203073B2 (en) 2006-11-02 2012-06-19 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8334452B2 (en) 2007-01-08 2012-12-18 Guardian Industries Corp. Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like
US20080169021A1 (en) * 2007-01-16 2008-07-17 Guardian Industries Corp. Method of making TCO front electrode for use in photovoltaic device or the like
JP5082928B2 (ja) * 2007-03-09 2012-11-28 三菱マテリアル株式会社 ＺｎＯ蒸着材及びその製造方法並びにそれにより形成されたＺｎＯ膜
EP2028695A1 (de) * 2007-07-12 2009-02-25 Applied Materials, Inc. Verfahren zur Erzeugung einer transparenten leitfähigen Oxidbeschichtung
KR101208380B1 (ko) 2007-09-27 2012-12-05 미쓰비시 마테리알 가부시키가이샤 ＺｎＯ 증착재와 그 제조 방법, 및 ＺｎＯ 막
JP5499453B2 (ja) * 2007-09-27 2014-05-21 三菱マテリアル株式会社 ＺｎＯ蒸着材とその製造方法、およびそのＺｎＯ膜形成方法
JP5516838B2 (ja) * 2007-09-27 2014-06-11 三菱マテリアル株式会社 ＺｎＯ蒸着材の製造方法
US7888594B2 (en) 2007-11-20 2011-02-15 Guardian Industries Corp. Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index
US8409717B2 (en) 2008-04-21 2013-04-02 Guardian Industries Corp. Coated article with IR reflecting layer and method of making same
US8022291B2 (en) 2008-10-15 2011-09-20 Guardian Industries Corp. Method of making front electrode of photovoltaic device having etched surface and corresponding photovoltaic device
CN101580384B (zh) * 2009-06-10 2012-09-26 东莞南玻陶瓷科技有限公司 一种钇掺杂的azo靶材及其制备方法
JP6677885B2 (ja) * 2015-02-18 2020-04-08 三菱マテリアル株式会社 スパッタリングターゲット、及び、積層膜
WO2016132825A1 (ja) * 2015-02-18 2016-08-25 三菱マテリアル株式会社 スパッタリングターゲット、及び、積層膜

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5236632A (en) * 1989-08-10 1993-08-17 Tosoh Corporation Zinc oxide sintered body, and preparation process and use thereof
US5532062A (en) 1990-07-05 1996-07-02 Asahi Glass Company Ltd. Low emissivity film
JP2994812B2 (ja) * 1991-09-26 1999-12-27 キヤノン株式会社 太陽電池
DE69305794T2 (de) 1992-07-10 1997-06-12 Asahi Glass Co Ltd Transparenter, leitfähiger Film und Target und Material zur Gasphasenabscheidung für seine Herstellung
JP3366046B2 (ja) * 1993-03-30 2003-01-14 旭硝子株式会社 非晶質透明導電膜
JPH0769715A (ja) * 1993-08-31 1995-03-14 Mamoru Omori 高靱性酸化物セラミックスおよびその製造方法
US5736267A (en) 1994-08-17 1998-04-07 Asahi Glass Company Ltd. Transparent conductive film and method for its production, and sputtering target

Also Published As

Publication number Publication date
WO1999045163A1 (en) 1999-09-10
US6596135B1 (en) 2003-07-22
DE69909987T2 (de) 2004-05-27
EP1063317A4 (de) 2002-04-17
EP1063317A1 (de) 2000-12-27
EP1063317B1 (de) 2003-07-30

Similar Documents

Publication Publication Date Title
DE69909987D1 (de) Sputtertarget, transparenter leitender film und verfahren zu dessen herstellung
DE69829780D1 (de) Optischer film und verfahren zu dessen herstellung
DE69915132D1 (de) Mikroporöser polyolefinfilm und verfahren zu dessen herstellung
DE69915131D1 (de) Mikroporöser polyolefinfilm und verfahren zu dessen herstellung
ATE379971T1 (de) Disinfektionsmittel und verfahren zu dessen herstellung
DE69941054D1 (de) Isosorbid enthaltende poyester und verfahren zu deren herstellung
DE69929311D1 (de) Oximanderivate und verfahren zu ihrer herstellung
ATE551940T1 (de) Mehrschichtfolie und verfahren zu deren herstellung
DE69942382D1 (de) Sensor und verfahren zu dessen herstellung
DE60033156D1 (de) Glasscheibe und verfahren zu dessen herstellung
DE69804217D1 (de) Dekorfolie und verfahren zu deren herstellung
DE59914732D1 (de) Festelektrolyt-gassensor und verfahren zu dessen herstellung
DE69922815D1 (de) Gipsplatte und verfahren zu ihrer herstellung
DE69932361D1 (de) Trennschicht und verfahren zu deren herstellung
ATE288577T1 (de) Ladeluftkühler und verfahren zu dessen herstellung
DE69924980D1 (de) Feuerverzögernde konzentrate und verfahren zu deren herstellung
DE69833799D1 (de) Klebefolie und verfahren zu deren herstellung
DE59912124D1 (de) Wurzelkanalinstrument und verfahren zu dessen herstellung
DE69932358D1 (de) FLüSSIGKRISTALLINES, OPTISCHES ELEMENT UND VERFAHREN ZU DESSEN HERSTELLUNG
DE60022660D1 (de) Gasdichte beschichtungszusammensetzung, verfahren zu deren herstellung und gasdichter beschichtungsfilm
DE59904632D1 (de) Epithilonderivate, verfahren zu deren herstellung und deren verwendung
DE69721989D1 (de) Trennfolie und verfahren zu deren herstellung
EP1054607A4 (de) Mikrohaftverschluss und verfahren zu dessen herstellung
DE59914950D1 (de) Feldeffektgesteuerter transistor und verfahren zu dessen herstellung
DE60218734D1 (de) Dehnbare verbundfolie und verfahren zu ihrer herstellung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee