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DE69840589D1 - erungsvorrichtung - Google Patents

erungsvorrichtung

Info

Publication number
DE69840589D1
DE69840589D1 DE69840589T DE69840589T DE69840589D1 DE 69840589 D1 DE69840589 D1 DE 69840589D1 DE 69840589 T DE69840589 T DE 69840589T DE 69840589 T DE69840589 T DE 69840589T DE 69840589 D1 DE69840589 D1 DE 69840589D1
Authority
DE
Germany
Prior art keywords
erungsvorrichtung
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69840589T
Other languages
English (en)
Inventor
Toru Koizumi
Tetsunobu Kochi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69840589D1 publication Critical patent/DE69840589D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/623—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by evacuation via the output or reset lines
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
  • Light Receiving Elements (AREA)
DE69840589T 1997-10-06 1998-09-30 erungsvorrichtung Expired - Lifetime DE69840589D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27257897A JP3466886B2 (ja) 1997-10-06 1997-10-06 固体撮像装置

Publications (1)

Publication Number Publication Date
DE69840589D1 true DE69840589D1 (de) 2009-04-09

Family

ID=17515876

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69840589T Expired - Lifetime DE69840589D1 (de) 1997-10-06 1998-09-30 erungsvorrichtung

Country Status (7)

Country Link
US (1) US6650369B2 (de)
EP (1) EP0908957B1 (de)
JP (1) JP3466886B2 (de)
KR (1) KR100279305B1 (de)
CN (1) CN1175655C (de)
DE (1) DE69840589D1 (de)
TW (1) TW419835B (de)

Families Citing this family (89)

* Cited by examiner, † Cited by third party
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EP1662773B1 (de) 1997-08-15 2014-01-22 Sony Corporation Festkörper-Bildaufnahmevorrichtung und Steuerverfahren dafür
JP4006075B2 (ja) * 1998-01-30 2007-11-14 キヤノン株式会社 Ｃｍｏｓセンサ及び撮像システム
JP4305970B2 (ja) 1998-06-05 2009-07-29 ソニー株式会社 固体撮像素子の駆動方法
JP4200545B2 (ja) 1998-06-08 2008-12-24 ソニー株式会社 固体撮像素子およびその駆動方法、並びにカメラシステム
US7015964B1 (en) * 1998-11-02 2006-03-21 Canon Kabushiki Kaisha Solid-state image pickup device and method of resetting the same
US6850278B1 (en) * 1998-11-27 2005-02-01 Canon Kabushiki Kaisha Solid-state image pickup apparatus
US7324144B1 (en) * 1999-10-05 2008-01-29 Canon Kabushiki Kaisha Solid image pickup device, image pickup system and method of driving solid image pickup device
EP1091409B1 (de) 1999-10-05 2010-08-18 Canon Kabushiki Kaisha Festkörperbildaufnahmevorrichtung und Bildaufnahmesystem
WO2001048826A1 (en) * 1999-12-24 2001-07-05 Hamamatsu Photonics K.K. Semiconductor energy sensor
JP2001189893A (ja) * 1999-12-28 2001-07-10 Toshiba Corp 固体撮像装置
US6995800B2 (en) * 2000-01-27 2006-02-07 Canon Kabushiki Kaisha Image pickup apparatus utilizing a plurality of converging lenses
US6965408B2 (en) * 2000-02-28 2005-11-15 Canon Kabushiki Kaisha Solid-state image pickup device having a photoelectric conversion unit and a punch-through current suppression circuit
EP2290952A3 (de) * 2000-07-27 2011-08-17 Canon Kabushiki Kaisha Bildaufnahmevorrichtung
JP3750502B2 (ja) * 2000-08-03 2006-03-01 ソニー株式会社 固体撮像装置およびカメラシステム
JP3667214B2 (ja) * 2000-08-25 2005-07-06 キヤノン株式会社 固体撮像装置およびその駆動方法
US7012644B1 (en) * 2000-09-06 2006-03-14 Hewlett-Packard Development Company, L.P. Multiple output node charge coupled device
US6888572B1 (en) * 2000-10-26 2005-05-03 Rockwell Science Center, Llc Compact active pixel with low-noise image formation
JP4597354B2 (ja) * 2000-12-20 2010-12-15 ルネサスエレクトロニクス株式会社 Ｍｏｓ型イメージセンサ
US6541772B2 (en) * 2000-12-26 2003-04-01 Honeywell International Inc. Microbolometer operating system
JP3899236B2 (ja) * 2001-02-16 2007-03-28 シャープ株式会社 イメージセンサの製造方法
US7180544B2 (en) * 2001-03-05 2007-02-20 Matsushita Electric Industrial Co., Ltd. Solid state image sensor
CN100347859C (zh) * 2001-03-05 2007-11-07 松下电器产业株式会社 固体摄象装置
JP2002330351A (ja) * 2001-04-27 2002-11-15 Mitsubishi Electric Corp 固体撮像素子
JP3962561B2 (ja) * 2001-07-12 2007-08-22 キヤノン株式会社 固体撮像装置及びそれを用いた撮像システム
JP4681767B2 (ja) * 2001-07-17 2011-05-11 キヤノン株式会社 撮像装置およびカメラ
JP4195802B2 (ja) * 2001-09-21 2008-12-17 イーエヌジー株式会社 半導体撮像素子
WO2003054922A2 (en) 2001-12-21 2003-07-03 Koninklijke Philips Electronics N.V. Image pick-up device and camera system comprising an image pick-up device
KR100940637B1 (ko) * 2002-02-12 2010-02-05 소니 주식회사 고체 촬상 장치 및 카메라 시스템
JP4323772B2 (ja) * 2002-10-31 2009-09-02 キヤノン株式会社 固体撮像装置、カメラ及びカメラ制御システム
JP2004153705A (ja) * 2002-10-31 2004-05-27 Matsushita Electric Ind Co Ltd 増幅型固体撮像装置及びそれを用いた撮像システム
JP3988189B2 (ja) * 2002-11-20 2007-10-10 ソニー株式会社 固体撮像装置
JP4355148B2 (ja) * 2003-02-28 2009-10-28 パナソニック株式会社 固体撮像装置の駆動方法
JP3794637B2 (ja) 2003-03-07 2006-07-05 松下電器産業株式会社 固体撮像装置
JP4283014B2 (ja) * 2003-03-19 2009-06-24 パナソニック株式会社 固体撮像装置、固体撮像装置の駆動方法およびカメラ
JP3562649B1 (ja) * 2003-03-20 2004-09-08 松下電器産業株式会社 固体撮像装置およびその駆動方法
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US7518759B2 (en) * 2003-04-22 2009-04-14 Xerox Corporation Readout system for a CMOS-based image sensor array
JP4231328B2 (ja) * 2003-04-24 2009-02-25 浜松ホトニクス株式会社 固体撮像装置
JP4207659B2 (ja) 2003-05-16 2009-01-14 ソニー株式会社 固体撮像装置およびその駆動方法、ならびにカメラ装置
CN1574370A (zh) * 2003-05-30 2005-02-02 松下电器产业株式会社 固体摄像器件
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JP4378137B2 (ja) * 2003-09-04 2009-12-02 キヤノン株式会社 読み出し回路、固体撮像装置、及びこれを用いたカメラシステム
JP3829831B2 (ja) * 2003-09-09 2006-10-04 セイコーエプソン株式会社 固体撮像装置及びその駆動方法
JP2005229373A (ja) * 2004-02-13 2005-08-25 Sony Corp 固体撮像装置および固体撮像装置の駆動方法
JP4434797B2 (ja) * 2004-03-19 2010-03-17 オリンパス株式会社 撮像素子および撮像装置
JP4074599B2 (ja) * 2004-03-26 2008-04-09 シャープ株式会社 増幅型固体撮像装置
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JP4654623B2 (ja) * 2004-07-08 2011-03-23 ソニー株式会社 固体撮像装置の製造方法
JP4229884B2 (ja) * 2004-07-29 2009-02-25 シャープ株式会社 増幅型固体撮像装置
CN101069418A (zh) * 2005-02-28 2007-11-07 松下电器产业株式会社 固体摄像装置及其驱动方法
JP4340640B2 (ja) 2005-04-20 2009-10-07 シャープ株式会社 増幅型固体撮像装置
JP5340374B2 (ja) * 2005-06-09 2013-11-13 キヤノン株式会社 撮像装置及び撮像システム
JP5247007B2 (ja) * 2005-06-09 2013-07-24 キヤノン株式会社 撮像装置及び撮像システム
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JP4979375B2 (ja) * 2006-12-28 2012-07-18 キヤノン株式会社 固体撮像装置及び撮像システム
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JP4921615B2 (ja) 2010-01-25 2012-04-25 パナソニック株式会社 プロテインａを自己組織化膜上に固定する方法
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KR101728713B1 (ko) * 2010-10-08 2017-04-21 (주) 지안 넓은 동적범위를 갖는 씨모스 이미지 센서 및 이미지 센싱 방법
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Also Published As

Publication number Publication date
EP0908957A3 (de) 2000-04-05
CN1217618A (zh) 1999-05-26
KR100279305B1 (ko) 2001-02-01
JP3466886B2 (ja) 2003-11-17
TW419835B (en) 2001-01-21
EP0908957A2 (de) 1999-04-14
KR19990036904A (ko) 1999-05-25
JPH11112018A (ja) 1999-04-23
US20030137594A1 (en) 2003-07-24
CN1175655C (zh) 2004-11-10
US6650369B2 (en) 2003-11-18
EP0908957B1 (de) 2009-02-25

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