DE69500600D1 - Halbleiterlaservorrichtung - Google Patents

Halbleiterlaservorrichtung

Info

Publication number: DE69500600D1
Authority: DE; Germany
Prior art keywords: semiconductor laser; laser device; semiconductor; laser
Prior art date: 1994-06-07
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69500600T

Other languages

English (en)

Other versions

DE69500600T2 (de

Inventor

Shoji Kitamura

Satoru Nagano

Yoichi Shindo

Katsumi Oguri

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fuji Electric Co Ltd

Original Assignee

Fuji Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1994-06-07

Filing date

1995-06-06

Publication date

1997-10-02

1995-06-06 Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd

1997-10-02 Publication of DE69500600D1 publication Critical patent/DE69500600D1/de

1998-04-09 Application granted granted Critical

1998-04-09 Publication of DE69500600T2 publication Critical patent/DE69500600T2/de

2015-06-07 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0231—Stems
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0232—Lead-frames
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
- H01S5/02234—Resin-filled housings; the housings being made of resin
- H10W72/5522—
- H10W90/756—

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Semiconductor Lasers (AREA)
Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

DE69500600T 1994-06-07 1995-06-06 Halbleiterlaservorrichtung Expired - Fee Related DE69500600T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP6124815A JPH07335980A (ja)	1994-06-07	1994-06-07	半導体レーザ装置

Publications (2)

Publication Number	Publication Date
DE69500600D1 true DE69500600D1 (de)	1997-10-02
DE69500600T2 DE69500600T2 (de)	1998-04-09

Family

ID=14894806

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69500600T Expired - Fee Related DE69500600T2 (de)	1994-06-07	1995-06-06	Halbleiterlaservorrichtung

Country Status (6)

Country	Link
US (1)	US5614735A (de)
EP (1)	EP0687042B1 (de)
JP (1)	JPH07335980A (de)
KR (1)	KR960002998A (de)
DE (1)	DE69500600T2 (de)
TW (1)	TW283270B (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0492655A1 (de) *	1990-12-17	1992-07-01	Isuzu Motors Limited	Amphibisches Kraftfahrzeug
EP0646971B1 (de)	1993-09-30	1997-03-12	Siemens Aktiengesellschaft	Zweipoliges SMT-Miniatur-Gehäuse für Halbleiterbauelemente und Verfahren zu dessen Herstellung
US5808325A (en) *	1996-06-28	1998-09-15	Motorola, Inc.	Optical transmitter package assembly including lead frame having exposed flange with key
US5723881A (en) *	1996-12-04	1998-03-03	Quarton Inc.	Dual-beam laser diode
JP2907186B2 (ja) *	1997-05-19	1999-06-21	日本電気株式会社	半導体装置、その製造方法
EP1004145B1 (de)	1997-07-29	2005-06-01	Osram Opto Semiconductors GmbH	Optoelektronisches bauelement
US6396133B1 (en) *	1998-09-03	2002-05-28	Micron Technology, Inc.	Semiconductor device with heat-dissipating lead-frame and process of manufacturing same
US6236116B1 (en) *	1998-09-03	2001-05-22	Micron Technology, Inc.	Semiconductor device having a built-in heat sink and process of manufacturing same
EP1160881A1 (de) *	2000-05-27	2001-12-05	Mu-Chin Yu	Gekapselte, lichtemittierende Diode und Kapselungsverfahren
US7095101B2 (en) *	2000-11-15	2006-08-22	Jiahn-Chang Wu	Supporting frame for surface-mount diode package
ATE324671T1 (de) *	2000-12-04	2006-05-15	Mu-Chin Yu	Licht-emittierende diode mit verbesserter wärmezerstreuung
JP3735033B2 (ja) *	2000-12-07	2006-01-11	シャープ株式会社	半導体レーザ装置
US6577656B2 (en) *	2001-03-13	2003-06-10	Finisar Corporation	System and method of packaging a laser/detector
JP4262937B2 (ja) *	2001-07-26	2009-05-13	シャープ株式会社	半導体レーザ装置
JP2003133627A (ja) *	2001-10-19	2003-05-09	Sharp Corp	半導体レーザ装置
JP3987716B2 (ja)	2001-12-10	2007-10-10	シャープ株式会社	半導体レーザ装置およびその製造方法
WO2003081735A1 (fr) *	2002-03-25	2003-10-02	Sanyo Electric Co., Ltd.	Dispositif a faisceau laser a semi-conducteurs
JP3947495B2 (ja) *	2003-06-02	2007-07-18	ローム株式会社	モールド型半導体レーザ
JP4031748B2 (ja) *	2003-10-06	2008-01-09	ローム株式会社	半導体レーザ
JP3909853B2 (ja) *	2004-04-26	2007-04-25	株式会社東芝	半導体レーザ装置及び半導体レーザ組立体
US7705365B2 (en) *	2006-01-24	2010-04-27	Denso Corporation	Lighting device and light emitting module for the same
JP4970924B2 (ja)	2006-03-28	2012-07-11	三菱電機株式会社	光素子用パッケージとこれを用いた光半導体装置
US20080303127A1 (en)	2007-06-05	2008-12-11	Mitsubishi Electric Corporation	Cap-less package and manufacturing method thereof
US8492179B2 (en) *	2008-07-11	2013-07-23	Koninklijke Philips N.V.	Method of mounting a LED module to a heat sink
US8101955B2 (en) *	2009-04-17	2012-01-24	Avago Technologies Ecbu Ip (Singapore) Pte. Ltd.	PLCC package with a reflector cup surrounded by an encapsulant
US8089075B2 (en) *	2009-04-17	2012-01-03	Avago Technologies Ecbu Ip (Singapore) Pte. Ltd.	LFCC package with a reflector cup surrounded by a single encapsulant
DE102016101942B4 (de) *	2016-02-04	2022-07-21	OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung	Verfahren zum Herstellen einer optoelektronischen Leuchtvorrichtung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4157486A (en) *	1977-12-19	1979-06-05	Western Electric Company, Inc.	Electroluminescent display and circuit protective device and method of making
JPH02125687A (ja) *	1988-11-04	1990-05-14	Sony Corp	半導体レーザ装置
US5270555A (en) *	1989-05-18	1993-12-14	Murata Manufacturing Co., Ltd.	Pyroelectric IR-sensor with a molded inter connection device substrate having a low thermal conductivity coefficient
US5444726A (en) *	1990-11-07	1995-08-22	Fuji Electric Co., Ltd.	Semiconductor laser device
JPH07170019A (ja) *	1993-12-14	1995-07-04	Fuji Electric Co Ltd	半導体レーザ装置
EP0484887B1 (de) *	1990-11-07	1996-04-03	Fuji Electric Co., Ltd.	Laserdiode mit einer Schutzschicht auf ihrer lichtemittierenden Endfläche
TW253996B (de) *	1992-04-07	1995-08-11	Fuji Electric Co Ltd
US5266817A (en) *	1992-05-18	1993-11-30	Lin Paul Y S	Package structure of multi-chip light emitting diode
DE4311530A1 (de) *	1992-10-02	1994-04-07	Telefunken Microelectron	Optoelektronisches Bauelement mit engem Öffnungswinkel

1994
- 1994-06-07 JP JP6124815A patent/JPH07335980A/ja active Pending
1995
- 1995-06-05 US US08/463,070 patent/US5614735A/en not_active Expired - Fee Related
- 1995-06-06 EP EP95108675A patent/EP0687042B1/de not_active Expired - Lifetime
- 1995-06-06 DE DE69500600T patent/DE69500600T2/de not_active Expired - Fee Related
- 1995-06-07 KR KR1019950015327A patent/KR960002998A/ko not_active Abandoned
- 1995-06-20 TW TW084106296A patent/TW283270B/zh active

Also Published As

Publication number	Publication date
US5614735A (en)	1997-03-25
EP0687042A1 (de)	1995-12-13
JPH07335980A (ja)	1995-12-22
EP0687042B1 (de)	1997-08-27
KR960002998A (ko)	1996-01-26
TW283270B (de)	1996-08-11
DE69500600T2 (de)	1998-04-09

Publication	Publication Date	Title
DE69828942D1 (de)	2005-03-17	Halbleiterlaservorrichtung
DE69500600D1 (de)	1997-10-02	Halbleiterlaservorrichtung
DE69633203D1 (de)	2004-09-23	Halbleiterlaser-Vorrichtungen
DE69326136D1 (de)	1999-09-30	Halbleiterlaservorrichtung
DE69608850D1 (de)	2000-07-20	Halbleiterlaser
DE69433951D1 (de)	2004-09-23	Verbundenes Halbleiterbauelement
DE69606812D1 (de)	2000-04-06	Halbleiterlaser
DE59508581D1 (de)	2000-08-24	Halbleiterbauelement
DE59607521D1 (de)	2001-09-27	Halbleiter-Bauelement-Konfiguration
EP0674368A3 (de)	1996-03-20	Halbleiterlaservorrichtung.
DE69501381D1 (de)	1998-02-12	Halbleitergerät
DE69522789D1 (de)	2001-10-25	Halbleitervorrichtung
DE69517044D1 (de)	2000-06-21	Halbleiterlaservorrichtung
DE69423196D1 (de)	2000-04-06	Halbleiterlaservorrichtung
DE69521719D1 (de)	2001-08-16	Halbleiter-laserelement
DE69725783D1 (de)	2003-12-04	Halbleiterlaser
DE69728503D1 (de)	2004-05-13	Halbleiterlaser
DE69513207D1 (de)	1999-12-16	Halbleitervorrichtung
DE69734384D1 (de)	2005-11-24	Halbleiter-Laservorrichtung
DE69701609D1 (de)	2000-05-11	Halbleiterlaservorrichtung
DE69615331D1 (de)	2001-10-25	Selbstschwingende Halbleiterlaservorrichtung
DE69708582D1 (de)	2002-01-10	Halbleiterlaservorrichtung
DE69815461D1 (de)	2003-07-17	Halbleiterlaservorrichtung
DE69529939D1 (de)	2003-04-24	Laservorrichtung
DE69308082D1 (de)	1997-03-27	Halbleiterlaservorrichtung

Legal Events

Date	Code	Title	Description
1998-09-24	8364	No opposition during term of opposition
2000-09-07	8339	Ceased/non-payment of the annual fee