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DE69431181D1 - Integrierte Leistungsschaltung ("PIC") und Verfahren zur Herstellung derselben - Google Patents

Integrierte Leistungsschaltung ("PIC") und Verfahren zur Herstellung derselben

Info

Publication number
DE69431181D1
DE69431181D1 DE69431181T DE69431181T DE69431181D1 DE 69431181 D1 DE69431181 D1 DE 69431181D1 DE 69431181 T DE69431181 T DE 69431181T DE 69431181 T DE69431181 T DE 69431181T DE 69431181 D1 DE69431181 D1 DE 69431181D1
Authority
DE
Germany
Prior art keywords
pic
making
same
integrated circuit
power integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69431181T
Other languages
English (en)
Inventor
Raffaele Zambrano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Application granted granted Critical
Publication of DE69431181D1 publication Critical patent/DE69431181D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS
DE69431181T 1994-05-19 1994-05-19 Integrierte Leistungsschaltung ("PIC") und Verfahren zur Herstellung derselben Expired - Lifetime DE69431181D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP94830229A EP0683521B1 (de) 1994-05-19 1994-05-19 Integrierte Leistungsschaltung ("PIC") und Verfahren zur Herstellung derselben

Publications (1)

Publication Number Publication Date
DE69431181D1 true DE69431181D1 (de) 2002-09-19

Family

ID=8218442

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69431181T Expired - Lifetime DE69431181D1 (de) 1994-05-19 1994-05-19 Integrierte Leistungsschaltung ("PIC") und Verfahren zur Herstellung derselben

Country Status (4)

Country Link
US (2) US5602416A (de)
EP (1) EP0683521B1 (de)
JP (1) JP3051045B2 (de)
DE (1) DE69431181D1 (de)

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EP0751573A1 (de) * 1995-06-30 1997-01-02 STMicroelectronics S.r.l. Integrierte Leistungsschaltung und Verfahren zur Herstellung derselben
CN1156904C (zh) * 1996-03-06 2004-07-07 皇家菲利浦电子有限公司 制造pic(功率集成电路)器件的方法以及这种方法制造的pic器件
EP0809293B1 (de) * 1996-05-21 2001-08-29 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Leistungshalbleiterstruktur mit einem durch den Vertikaltransistor gesteuerten Lateraltransistor
US5811350A (en) 1996-08-22 1998-09-22 Micron Technology, Inc. Method of forming contact openings and an electronic component formed from the same and other methods
US6261948B1 (en) 1998-07-31 2001-07-17 Micron Technology, Inc. Method of forming contact openings
US6380023B2 (en) 1998-09-02 2002-04-30 Micron Technology, Inc. Methods of forming contacts, methods of contacting lines, methods of operating integrated circuitry, and integrated circuits
IT1309699B1 (it) * 1999-02-18 2002-01-30 St Microelectronics Srl Dispositivo con transistore bipolare e transistore mosfet integratiin configurazione emitter switching
SE518797C2 (sv) * 2000-07-19 2002-11-19 Ericsson Telefon Ab L M Effekt-LDMOS-transistor innefattande ett flertal parallellkopplade transistorsegment med olika tröskelspänningar
US6525394B1 (en) * 2000-08-03 2003-02-25 Ray E. Kuhn Substrate isolation for analog/digital IC chips
US6492710B1 (en) * 2001-06-07 2002-12-10 Cypress Semiconductor Corp. Substrate isolated transistor
DE10202274B4 (de) * 2002-01-22 2012-12-27 Infineon Technologies Ag Integrierte Halbleiterschaltungsanordnung
US20050145915A1 (en) * 2004-01-06 2005-07-07 Badredin Fatemizadeh Selective epi-region method for integration of vertical power MOSFET and lateral driver devices
JP2006013450A (ja) * 2004-05-27 2006-01-12 Renesas Technology Corp 半導体装置およびその製造方法
KR100582374B1 (ko) * 2004-09-08 2006-05-22 매그나칩 반도체 유한회사 고전압 트랜지스터 및 그 제조 방법
US20060197153A1 (en) * 2005-02-23 2006-09-07 Chih-Feng Huang Vertical transistor with field region structure
CN1855538A (zh) * 2005-04-28 2006-11-01 崇贸科技股份有限公司 用于单片集成具有隔离结构的mos场效晶体管及其制作方法
GB2451121A (en) * 2007-07-20 2009-01-21 X Fab Uk Ltd Triple well CMOS process
US8299532B2 (en) * 2009-08-20 2012-10-30 United Microelectronics Corp. ESD protection device structure
WO2011158647A1 (ja) * 2010-06-17 2011-12-22 富士電機株式会社 半導体装置およびその製造方法
US9147690B2 (en) * 2012-03-08 2015-09-29 Ememory Technology Inc. Erasable programmable single-ploy nonvolatile memory
CN103594491B (zh) * 2012-08-14 2016-07-06 北大方正集团有限公司 一种cdmos制作方法
US9383512B2 (en) * 2012-12-31 2016-07-05 Infinera Corporation Light absorption and scattering devices in a photonic integrated circuit that minimize optical feedback and noise
TWI521683B (zh) * 2013-05-13 2016-02-11 力旺電子股份有限公司 具可程式可抹除的單一多晶矽層非揮發性記憶體
CN104425489B (zh) * 2013-08-20 2017-03-01 上海华虹宏力半导体制造有限公司 高压器件和低压器件集成结构和集成方法
JP6230455B2 (ja) * 2014-03-19 2017-11-15 株式会社東芝 半導体装置
US11437466B2 (en) * 2020-08-11 2022-09-06 Taiwan Semiconductor Manufacturing Company Limited Avalanche-protected transistors using a bottom breakdown current path and methods of forming the same

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US34025A (en) * 1861-12-24 de brame
US4001860A (en) * 1973-11-12 1977-01-04 Signetics Corporation Double diffused metal oxide semiconductor structure with isolated source and drain and method
JPS52132684A (en) * 1976-04-29 1977-11-07 Sony Corp Insulating gate type field effect transistor
JPS5846863B2 (ja) * 1977-08-25 1983-10-19 松下電器産業株式会社 半導体集積回路装置
US4344081A (en) * 1980-04-14 1982-08-10 Supertex, Inc. Combined DMOS and a vertical bipolar transistor device and fabrication method therefor
JPS58165374A (ja) * 1982-03-26 1983-09-30 Hitachi Ltd 複合トランジスタ
JPS612355A (ja) * 1984-06-15 1986-01-08 Hitachi Ltd 複合半導体素子
JPH073854B2 (ja) * 1985-12-18 1995-01-18 株式会社日立製作所 複合半導体装置
IT1188465B (it) * 1986-03-27 1988-01-14 Sgs Microelettronica Spa Rpocedimento per la fabbricazione di circuiti integrati a semiconduttore includenti dispositiv cmos e dispositivi elettronici ad alta tensione
JPH0685441B2 (ja) * 1986-06-18 1994-10-26 日産自動車株式会社 半導体装置
JP2515745B2 (ja) * 1986-07-14 1996-07-10 株式会社日立製作所 半導体装置の製造方法
JPS63150957A (ja) * 1986-12-15 1988-06-23 Nissan Motor Co Ltd 半導体装置
USRE34025E (en) * 1987-02-13 1992-08-11 Kabushiki Kaisha Toshiba Semiconductor device with isolation between MOSFET and control circuit
JPS6445159A (en) * 1987-08-13 1989-02-17 Nissan Motor Semiconductor device
JPH01189155A (ja) * 1988-01-25 1989-07-28 Sharp Corp 半導体装置
US5156989A (en) * 1988-11-08 1992-10-20 Siliconix, Incorporated Complementary, isolated DMOS IC technology
JPH02143454A (ja) * 1988-11-25 1990-06-01 Hitachi Ltd 半導体デバイス
IT1234252B (it) * 1989-06-16 1992-05-14 Sgs Thomson Microelectronics Dispositivo a semiconduttore comprendente un circuito di comando e uno stadio di potenza a flusso di corrente verticale integrati in modo monolitico nella stessa piastrina e relativo processo di fabbricazione
US5246871A (en) * 1989-06-16 1993-09-21 Sgs-Thomson Microelectronics S.R.L. Method of manufacturing a semiconductor device comprising a control circuit and a power stage with a vertical current flow, integrated in monolithic form on a single chip
JPH056960A (ja) * 1991-06-27 1993-01-14 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3226053B2 (ja) * 1992-06-03 2001-11-05 富士電機株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JP3051045B2 (ja) 2000-06-12
US5602416A (en) 1997-02-11
US5591662A (en) 1997-01-07
JPH07321214A (ja) 1995-12-08
EP0683521A1 (de) 1995-11-22
EP0683521B1 (de) 2002-08-14

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