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DE68921286D1 - Anlage zur plasmachemischen Gasphasenabscheidung. - Google Patents

Anlage zur plasmachemischen Gasphasenabscheidung.

Info

Publication number
DE68921286D1
DE68921286D1 DE68921286T DE68921286T DE68921286D1 DE 68921286 D1 DE68921286 D1 DE 68921286D1 DE 68921286 T DE68921286 T DE 68921286T DE 68921286 T DE68921286 T DE 68921286T DE 68921286 D1 DE68921286 D1 DE 68921286D1
Authority
DE
Germany
Prior art keywords
plant
vapor deposition
chemical vapor
plasma chemical
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68921286T
Other languages
English (en)
Other versions
DE68921286T2 (de
Inventor
Yasukazu C O Intellectual Mase
Masahiro C O Intellectual Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE68921286D1 publication Critical patent/DE68921286D1/de
Publication of DE68921286T2 publication Critical patent/DE68921286T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
DE68921286T 1988-11-04 1989-11-03 Anlage zur plasmachemischen Gasphasenabscheidung. Expired - Fee Related DE68921286T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63278793A JP2644309B2 (ja) 1988-11-04 1988-11-04 半導体製造装置

Publications (2)

Publication Number Publication Date
DE68921286D1 true DE68921286D1 (de) 1995-03-30
DE68921286T2 DE68921286T2 (de) 1995-08-03

Family

ID=17602257

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68921286T Expired - Fee Related DE68921286T2 (de) 1988-11-04 1989-11-03 Anlage zur plasmachemischen Gasphasenabscheidung.

Country Status (5)

Country Link
US (1) US5044311A (de)
EP (1) EP0367289B1 (de)
JP (1) JP2644309B2 (de)
KR (1) KR920010728B1 (de)
DE (1) DE68921286T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5900103A (en) * 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
US5891350A (en) 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
JP3257328B2 (ja) 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US6197703B1 (en) * 1998-08-17 2001-03-06 Advanced Micro Devices, Inc. Apparatus and method for manufacturing semiconductors using low dielectric constant materials
JP2001077088A (ja) * 1999-09-02 2001-03-23 Tokyo Electron Ltd プラズマ処理装置
JP2001148378A (ja) * 1999-11-22 2001-05-29 Tokyo Electron Ltd プラズマ処理装置、クラスターツールおよびプラズマ制御方法
DE19959604A1 (de) * 1999-12-10 2001-06-13 Volkswagen Ag Reaktor für Plasmabeschichtungen und Plasmadiffusionsbehandlungen
DE19959603A1 (de) * 1999-12-10 2001-06-13 Volkswagen Ag Verfahren zum Beschichten der inneren Oberfläche eines Reaktorgefäßes eines Reaktors
TWI290589B (en) * 2000-10-02 2007-12-01 Tokyo Electron Ltd Vacuum processing device
JP3910821B2 (ja) * 2000-10-26 2007-04-25 東京エレクトロン株式会社 基板の処理装置
JP3953361B2 (ja) * 2002-05-08 2007-08-08 東京エレクトロン株式会社 基板処理装置および基板処理方法
US20040069223A1 (en) * 2002-10-10 2004-04-15 Taiwan Semiconductor Manufacturing Co., Ltd. Wall liner and slot liner for process chamber
JP4060684B2 (ja) * 2002-10-29 2008-03-12 日本発条株式会社 ステージ
JP4141234B2 (ja) * 2002-11-13 2008-08-27 キヤノンアネルバ株式会社 プラズマ処理装置
KR100715876B1 (ko) * 2006-06-12 2007-05-07 에스케이 텔레콤주식회사 이동 통신 시스템에서의 전력 분배 장치
JP5077748B2 (ja) * 2007-09-06 2012-11-21 富士電機株式会社 成膜装置
US20090297731A1 (en) * 2008-05-30 2009-12-03 Asm Japan K.K. Apparatus and method for improving production throughput in cvd chamber
JP6386394B2 (ja) * 2015-02-18 2018-09-05 東芝メモリ株式会社 複合プロセス装置
KR20170019160A (ko) 2015-08-11 2017-02-21 기초과학연구원 고출력 광대역 고주파 결합기
KR20190046327A (ko) * 2017-10-26 2019-05-07 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
JPS5992520A (ja) * 1982-11-19 1984-05-28 Hitachi Ltd 気体電気化学反応装置
FR2538987A1 (fr) * 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
JPS6057613A (ja) * 1983-09-09 1985-04-03 Hitachi Ltd プラズマｃｖｄ装置
JPS6196724A (ja) * 1984-10-17 1986-05-15 Agency Of Ind Science & Technol 容量結合型プラズマｃｖｄ装置
US4616597A (en) * 1984-10-31 1986-10-14 Rca Corporation Apparatus for making a plasma coating
US4576830A (en) * 1984-11-05 1986-03-18 Chronar Corp. Deposition of materials
JPS63190635A (ja) * 1987-01-29 1988-08-08 Denki Kogyo Kk マイクロ波プラズマ処理装置
JP2555062B2 (ja) * 1987-04-10 1996-11-20 株式会社日立製作所 プラズマ処理装置

Also Published As

Publication number Publication date
KR900008628A (ko) 1990-06-03
JPH02125430A (ja) 1990-05-14
DE68921286T2 (de) 1995-08-03
JP2644309B2 (ja) 1997-08-25
EP0367289A2 (de) 1990-05-09
KR920010728B1 (ko) 1992-12-14
EP0367289B1 (de) 1995-02-22
US5044311A (en) 1991-09-03
EP0367289A3 (en) 1990-06-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee