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DE60335337D1 - Vorrichtung und Verfahren zur Herstellung von dünnen Schichten - Google Patents

Vorrichtung und Verfahren zur Herstellung von dünnen Schichten

Info

Publication number
DE60335337D1
DE60335337D1 DE60335337T DE60335337T DE60335337D1 DE 60335337 D1 DE60335337 D1 DE 60335337D1 DE 60335337 T DE60335337 T DE 60335337T DE 60335337 T DE60335337 T DE 60335337T DE 60335337 D1 DE60335337 D1 DE 60335337D1
Authority
DE
Germany
Prior art keywords
thin films
producing thin
producing
films
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60335337T
Other languages
English (en)
Inventor
Yusuke Fukuoka
Yasushi Fujioka
Katsushi Kishimoto
Hiroyuki Fukuda
Katsuhiko Nomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE60335337D1 publication Critical patent/DE60335337D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
DE60335337T 2002-10-11 2003-10-09 Vorrichtung und Verfahren zur Herstellung von dünnen Schichten Expired - Lifetime DE60335337D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002299069 2002-10-11

Publications (1)

Publication Number Publication Date
DE60335337D1 true DE60335337D1 (de) 2011-01-27

Family

ID=32064229

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60335337T Expired - Lifetime DE60335337D1 (de) 2002-10-11 2003-10-09 Vorrichtung und Verfahren zur Herstellung von dünnen Schichten

Country Status (3)

Country Link
US (1) US7032536B2 (de)
EP (1) EP1420081B1 (de)
DE (1) DE60335337D1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050277302A1 (en) * 2004-05-28 2005-12-15 Nguyen Son V Advanced low dielectric constant barrier layers
EP1858061B1 (de) * 2005-03-07 2011-10-19 Sharp Kabushiki Kaisha Plasmabehandlungsvorrichtung und halbleiter-dünnfilm-herstellungsverfahren damit
JP4728345B2 (ja) * 2005-11-25 2011-07-20 シャープ株式会社 プラズマ処理装置およびプラズマ処理方法
EP2037721A1 (de) * 2006-06-23 2009-03-18 Sharp Kabushiki Kaisha Plasmaverarbeitungsvorrichtung, plasmaverarbeitungsverfahren und fotoelektrisches umsetzungselement
US8203071B2 (en) 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
KR100924287B1 (ko) * 2007-05-10 2009-10-30 한국과학기술연구원 양광주가 존재하지 않는 직류 전원 플라스마 증착 장치와,양광주를 배제한 상태에서의 물질 증착 방법 및 이에 의해제조된 다이아몬드 박막
EP2215652A4 (de) * 2007-11-02 2011-10-05 Applied Materials Inc Plasmabehandlung zwischen abscheidungsprozessen
US20090130827A1 (en) * 2007-11-02 2009-05-21 Soo Young Choi Intrinsic amorphous silicon layer
US9068262B2 (en) * 2010-05-21 2015-06-30 Applied Materials, Inc. Tightly fitted ceramic insulator on large area electrode
EP2453472A1 (de) * 2010-11-16 2012-05-16 Applied Materials, Inc. Palette für die Hochtemperaturverarbeitung
KR101760316B1 (ko) * 2015-09-11 2017-07-21 주식회사 유진테크 기판처리장치
EP3648551B1 (de) 2017-06-27 2021-08-18 Canon Anelva Corporation Plasmabehandlungsvorrichtung
PL3648550T3 (pl) 2017-06-27 2021-11-22 Canon Anelva Corporation Urządzenie do przetwarzania plazmowego
EP4017223B1 (de) 2017-06-27 2025-10-15 Canon Anelva Corporation Plasmaverarbeitungsvorrichtung
TWI693863B (zh) 2017-06-27 2020-05-11 日商佳能安內華股份有限公司 電漿處理裝置
FI3817517T3 (fi) * 2018-06-26 2024-09-03 Canon Anelva Corp Plasmakäsittelylaite, plasmakäsittelymenetelmä, ohjelma ja muistiväline
DE102018133007A1 (de) * 2018-12-20 2020-06-25 Bayerische Motoren Werke Aktiengesellschaft Verfahren zum Herstellen eines Hochvoltspeichers
US20230011958A1 (en) * 2019-12-04 2023-01-12 Jiangsu Favored Nanotechnology Co., Ltd. Coating equipment

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5933251B2 (ja) * 1977-10-19 1984-08-14 株式会社日立製作所 プラズマ気相処理装置
US4264393A (en) 1977-10-31 1981-04-28 Motorola, Inc. Reactor apparatus for plasma etching or deposition
US4885074A (en) * 1987-02-24 1989-12-05 International Business Machines Corporation Plasma reactor having segmented electrodes
JPH04326725A (ja) * 1991-04-26 1992-11-16 Tokyo Electron Ltd プラズマ装置
JP3146112B2 (ja) * 1993-12-24 2001-03-12 シャープ株式会社 プラズマｃｖｄ装置
JPH08288096A (ja) * 1995-02-13 1996-11-01 Mitsubishi Electric Corp プラズマ処理装置
JP3238082B2 (ja) * 1996-05-16 2001-12-10 シャープ株式会社 電子デバイス製造装置
JP3940190B2 (ja) * 1996-09-30 2007-07-04 松下電器産業株式会社 真空処理装置
JP3598717B2 (ja) * 1997-03-19 2004-12-08 株式会社日立製作所 プラズマ処理装置
JP3544136B2 (ja) * 1998-02-26 2004-07-21 キヤノン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2961103B1 (ja) * 1998-04-28 1999-10-12 三菱重工業株式会社 プラズマ化学蒸着装置
US6377437B1 (en) * 1999-12-22 2002-04-23 Lam Research Corporation High temperature electrostatic chuck

Also Published As

Publication number Publication date
US20040069230A1 (en) 2004-04-15
EP1420081A3 (de) 2006-05-03
EP1420081B1 (de) 2010-12-15
EP1420081A2 (de) 2004-05-19
US7032536B2 (en) 2006-04-25

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