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DE60327962D1 - Eingebautes Halbleitermodul im Millimeterwellenband - Google Patents

Eingebautes Halbleitermodul im Millimeterwellenband

Info

Publication number
DE60327962D1
DE60327962D1 DE60327962T DE60327962T DE60327962D1 DE 60327962 D1 DE60327962 D1 DE 60327962D1 DE 60327962 T DE60327962 T DE 60327962T DE 60327962 T DE60327962 T DE 60327962T DE 60327962 D1 DE60327962 D1 DE 60327962D1
Authority
DE
Germany
Prior art keywords
built
millimeter wave
semiconductor module
wave band
band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60327962T
Other languages
English (en)
Inventor
Hideki Iwaki
Yutaka Taguchi
Tetsuyosi Ogura
Yasuhiro Sugaya
Toshiyuki Asahi
Tousaku Nishiyama
Yoshinobu Idogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Application granted granted Critical
Publication of DE60327962D1 publication Critical patent/DE60327962D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10W44/20
    • H10W42/20
    • H10W74/01
    • H10W90/00
    • H10W99/00
    • H10W72/5445
    • H10W72/5449
    • H10W72/5522
    • H10W72/884
DE60327962T 2002-04-03 2003-04-02 Eingebautes Halbleitermodul im Millimeterwellenband Expired - Fee Related DE60327962D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002100959 2002-04-03

Publications (1)

Publication Number Publication Date
DE60327962D1 true DE60327962D1 (de) 2009-07-30

Family

ID=28035926

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60327962T Expired - Fee Related DE60327962D1 (de) 2002-04-03 2003-04-02 Eingebautes Halbleitermodul im Millimeterwellenband

Country Status (4)

Country Link
US (1) US7061100B2 (de)
EP (1) EP1351301B1 (de)
CN (1) CN100346473C (de)
DE (1) DE60327962D1 (de)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3575478B2 (ja) * 2002-07-03 2004-10-13 ソニー株式会社 モジュール基板装置の製造方法、高周波モジュール及びその製造方法
US7488895B2 (en) 2003-09-29 2009-02-10 Panasonic Corporation Method for manufacturing component built-in module, and component built-in module
CN1906529B (zh) * 2003-11-18 2010-05-12 尼康股份有限公司 显示装置制造方法及显示装置
EP1775765B1 (de) * 2004-06-28 2018-05-02 Mitsubishi Electric Corporation Mehrschichtiges dielektrisches substrat und halbleiterkapselung
US20060034029A1 (en) * 2004-08-13 2006-02-16 Cyntec Company Current detector with improved resistance adjustable range and heat dissipation
WO2006043388A1 (ja) * 2004-10-21 2006-04-27 Matsushita Electric Industrial Co., Ltd. 半導体内蔵モジュール及びその製造方法
JP2006120935A (ja) * 2004-10-22 2006-05-11 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7566952B2 (en) * 2005-01-05 2009-07-28 International Business Machines Corporation On-chip circuit pad structure
US7310036B2 (en) * 2005-01-10 2007-12-18 International Business Machines Corporation Heat sink for integrated circuit devices
JP2006210410A (ja) * 2005-01-25 2006-08-10 Toshiba Corp 半導体装置
US7557425B2 (en) * 2005-05-17 2009-07-07 Honeywell International Inc. Package cap with bypass capacitance
DE102005032489B3 (de) * 2005-07-04 2006-11-16 Schweizer Electronic Ag Leiterplatten-Mehrschichtaufbau mit integriertem elektrischem Bauteil und Herstellungsverfahren
JP4810904B2 (ja) 2005-07-20 2011-11-09 ソニー株式会社 高周波スイッチ回路を有する高周波装置
JP5115200B2 (ja) * 2005-11-16 2013-01-09 富士通株式会社 電子素子、それを有するパッケージ及び電子装置
US20070114643A1 (en) * 2005-11-22 2007-05-24 Honeywell International Inc. Mems flip-chip packaging
JP2007157801A (ja) * 2005-12-01 2007-06-21 Matsushita Electric Ind Co Ltd 半導体モジュールとその製造方法
US9252067B1 (en) * 2006-01-25 2016-02-02 Lockheed Martin Corporation Hybrid microwave integrated circuit
JP5165207B2 (ja) 2006-03-29 2013-03-21 オンセミコンダクター・トレーディング・リミテッド 半導体装置の製造方法
TWI328413B (en) * 2007-02-14 2010-08-01 Advanced Semiconductor Eng A device for impedance matching on substrate
JP2009010358A (ja) * 2007-05-28 2009-01-15 Panasonic Corp 電子部品内蔵モジュール及びその製造方法
JP5012896B2 (ja) * 2007-06-26 2012-08-29 株式会社村田製作所 部品内蔵基板の製造方法
DE102007046969B3 (de) * 2007-09-28 2009-04-02 Siemens Ag Elektronische Schaltung aus Teilschaltungen und Verfahren zu deren Herstellung und demgemäßer Umrichter oder Schalter
US7834464B2 (en) * 2007-10-09 2010-11-16 Infineon Technologies Ag Semiconductor chip package, semiconductor chip assembly, and method for fabricating a device
US8198646B2 (en) * 2008-06-24 2012-06-12 Osram Opto Semiconductors Gmbh Light emitting device and method of manufacturing a light emitting device
US7842607B2 (en) * 2008-07-15 2010-11-30 Stats Chippac, Ltd. Semiconductor device and method of providing a thermal dissipation path through RDL and conductive via
JP2010238941A (ja) * 2009-03-31 2010-10-21 Sanyo Electric Co Ltd 発光デバイス
JP5287390B2 (ja) * 2009-03-16 2013-09-11 ソニー株式会社 半導体装置、伝送システム、半導体装置の製造方法及び伝送システムの製造方法
US9355962B2 (en) * 2009-06-12 2016-05-31 Stats Chippac Ltd. Integrated circuit package stacking system with redistribution and method of manufacture thereof
CN101989595B (zh) * 2009-07-30 2012-09-26 比亚迪股份有限公司 功率器件模块
KR100935416B1 (ko) 2009-08-07 2010-03-31 케이피엘써키트(주) 친환경 led 기판 열방지용 메탈 pcb 제조방법
KR20110139462A (ko) * 2010-06-23 2011-12-29 삼성전기주식회사 절연수지 조성물 및 이를 이용하여 제조된 인쇄회로기판
FR2973942B1 (fr) * 2011-04-08 2013-09-06 Continental Automotive France Composant électronique avec pastille de dissipation thermique et carte utilisant ce composant
WO2013035337A1 (ja) * 2011-09-09 2013-03-14 日本特殊陶業株式会社 半導体モジュール、回路基板
CN102569223B (zh) * 2012-01-11 2016-09-14 华为技术有限公司 一种功率器件绝缘散热结构及电路板、电源设备
US8581406B1 (en) * 2012-04-20 2013-11-12 Raytheon Company Flip chip mounted monolithic microwave integrated circuit (MMIC) structure
US9209106B2 (en) * 2012-06-21 2015-12-08 Ati Technologies Ulc Thermal management circuit board for stacked semiconductor chip device
KR101477359B1 (ko) * 2012-12-27 2014-12-29 삼성전기주식회사 전력 반도체 모듈
ITMI20130654A1 (it) * 2013-04-22 2014-10-23 St Microelectronics Srl Assieme elettronico per montaggio su scheda elettronica
DE102013213297B4 (de) 2013-07-01 2019-12-05 Rohde & Schwarz Gmbh & Co. Kg Mikrowellenanordnung zur Übertragung von Hochfrequenzsignalen
US10553557B2 (en) 2014-11-05 2020-02-04 Infineon Technologies Austria Ag Electronic component, system and method
US10192846B2 (en) 2014-11-05 2019-01-29 Infineon Technologies Austria Ag Method of inserting an electronic component into a slot in a circuit board
US10064287B2 (en) * 2014-11-05 2018-08-28 Infineon Technologies Austria Ag System and method of providing a semiconductor carrier and redistribution structure
TWI578472B (zh) * 2014-11-27 2017-04-11 矽品精密工業股份有限公司 封裝基板、半導體封裝件及其製法
US10854531B2 (en) * 2015-06-26 2020-12-01 Pep Innovation Pte Ltd. Semiconductor packaging method, semiconductor package and stacked semiconductor packages
DE102015111307A1 (de) 2015-07-13 2017-01-19 Epcos Ag Bauelement mit verbesserter Wärmeableitung
KR102824610B1 (ko) * 2016-11-14 2025-06-25 삼성전자주식회사 반도체 모듈
KR102576638B1 (ko) 2018-07-02 2023-09-11 삼성전자주식회사 유전 손실이 다른 복수의 유전체들을 갖는 절연층을 포함하는 회로 기판, 및 이를 포함하는 전자 장치
US10923412B2 (en) 2018-08-10 2021-02-16 Cerebras Systems Inc. Apparatuses and methods for implementing a sliding thermal interface between substrates with varying coefficients of thermal expansion
DE112019004661T5 (de) 2018-09-18 2021-08-26 Avx Corporation Oberflächenmontierter Hochleistungsfilter
US11271566B2 (en) * 2018-12-14 2022-03-08 Integrated Device Technology, Inc. Digital logic compatible inputs in compound semiconductor circuits
EP3716321B1 (de) * 2019-03-29 2025-01-29 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Bauelementträger mit eingebettetem halbleiterbauelement und eingebettetem hochleitfähigem block, die miteinander gekoppelt sind
US12245377B2 (en) 2019-03-29 2025-03-04 At&S Austria Technologie & Systemtechnik Aktiengesellschaft Component carrier with embedded semiconductor component and embedded highly-conductive block which are mutually coupled
KR20210013955A (ko) * 2019-07-29 2021-02-08 삼성전기주식회사 반도체 패키지
CN115552801B (zh) * 2020-05-27 2024-07-26 株式会社村田制作所 高频模块以及通信装置
JP7337034B2 (ja) * 2020-09-15 2023-09-01 三菱電機株式会社 半導体パッケージおよび半導体装置
DE102021105529A1 (de) 2021-03-08 2022-09-08 Rogers Germany Gmbh Leiterplatte, Metall-Keramik-Substrat als Einsatz und Verfahren zur Herstellung eines solchen Einsatzes
CN114496808B (zh) * 2022-01-25 2024-03-12 河北博威集成电路有限公司 倒装式塑封的装配方法、屏蔽系统、散热系统及应用

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5401687A (en) * 1993-04-15 1995-03-28 Martin Marietta Corporation Process for high density interconnection of substrates and integrated circuit chips containing sensitive structures
US5461003A (en) * 1994-05-27 1995-10-24 Texas Instruments Incorporated Multilevel interconnect structure with air gaps formed between metal leads
US5524339A (en) * 1994-09-19 1996-06-11 Martin Marietta Corporation Method for protecting gallium arsenide mmic air bridge structures
US5561085A (en) * 1994-12-19 1996-10-01 Martin Marietta Corporation Structure for protecting air bridges on semiconductor chips from damage
US5766975A (en) * 1995-01-09 1998-06-16 Integrated Device Technology, Inc. Packaged integrated circuit having thermal enhancement and reduced footprint size
KR0179921B1 (ko) * 1996-05-17 1999-03-20 문정환 적측형 반도체 패키지
JP3197213B2 (ja) * 1996-05-29 2001-08-13 松下電器産業株式会社 プリント配線板およびその製造方法
JP2856192B2 (ja) 1997-04-10 1999-02-10 日本電気株式会社 半導体装置
JP3051700B2 (ja) 1997-07-28 2000-06-12 京セラ株式会社 素子内蔵多層配線基板の製造方法
JP3375555B2 (ja) * 1997-11-25 2003-02-10 松下電器産業株式会社 回路部品内蔵モジュールおよびその製造方法
US6038133A (en) 1997-11-25 2000-03-14 Matsushita Electric Industrial Co., Ltd. Circuit component built-in module and method for producing the same
US6057600A (en) * 1997-11-27 2000-05-02 Kyocera Corporation Structure for mounting a high-frequency package
US6136131A (en) * 1998-06-02 2000-10-24 Instrument Specialties Company, Inc. Method of shielding and obtaining access to a component on a printed circuit board
FR2780200B1 (fr) 1998-06-22 2003-09-05 Commissariat Energie Atomique Dispositif et procede de formation d'un dispositif presentant une cavite a atmosphere controlee
JP2000252716A (ja) * 1999-03-03 2000-09-14 Sony Corp 分布定数フィルタおよびその製造方法、ならびに分布定数フィルタ回路基板
US6538210B2 (en) * 1999-12-20 2003-03-25 Matsushita Electric Industrial Co., Ltd. Circuit component built-in module, radio device having the same, and method for producing the same
JP3481222B2 (ja) * 2001-09-07 2003-12-22 松下電器産業株式会社 配線構造及びその設計方法
US6683795B1 (en) * 2002-04-10 2004-01-27 Amkor Technology, Inc. Shield cap and semiconductor package including shield cap

Also Published As

Publication number Publication date
US20030189246A1 (en) 2003-10-09
CN100346473C (zh) 2007-10-31
CN1449030A (zh) 2003-10-15
EP1351301A2 (de) 2003-10-08
EP1351301B1 (de) 2009-06-17
EP1351301A3 (de) 2004-02-04
US7061100B2 (en) 2006-06-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee