DE60320440D1 - NITROGEN OXIDATION OF THE APPLIED MOS-GATE STRUCTURE - Google Patents

NITROGEN OXIDATION OF THE APPLIED MOS-GATE STRUCTURE

Info

Publication number: DE60320440D1
Authority: DE; Germany
Prior art keywords: gate structure; nitrogen oxidation; mos; applied mos; oxidation
Prior art date: 2002-10-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE60320440T

Other languages

German (de)

Other versions

DE60320440T2 (en

Inventor

Yue-Song He

Richard M Fastow

Zhi-Gang Wang

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Spansion LLC

Original Assignee

Spansion LLC

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-10-30

Filing date

2003-06-10

Publication date

2008-05-29

2003-06-10 Application filed by Spansion LLC filed Critical Spansion LLC

2008-05-29 Publication of DE60320440D1 publication Critical patent/DE60320440D1/en

2009-06-18 Application granted granted Critical

2009-06-18 Publication of DE60320440T2 publication Critical patent/DE60320440T2/en

2023-06-11 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
- H10D64/01354—
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/031—Manufacture or treatment of data-storage electrodes
- H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

DE60320440T 2002-10-30 2003-06-10 NITROGEN OXIDATION OF THE APPLIED MOS-GATE STRUCTURE Expired - Lifetime DE60320440T2 (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US284866		2002-10-30
US10/284,866 US6867119B2 (en)	2002-10-30	2002-10-30	Nitrogen oxidation to reduce encroachment
PCT/US2003/018447 WO2004042808A1 (en)	2002-10-30	2003-06-10	Nitrogen oxidation of etched mos gate structure

Publications (2)

Publication Number	Publication Date
DE60320440D1 true DE60320440D1 (en)	2008-05-29
DE60320440T2 DE60320440T2 (en)	2009-06-18

Family

ID=32175000

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE60320440T Expired - Lifetime DE60320440T2 (en)	2002-10-30	2003-06-10	NITROGEN OXIDATION OF THE APPLIED MOS-GATE STRUCTURE

Country Status (9)

Country	Link
US (1)	US6867119B2 (en)
EP (1)	EP1556887B1 (en)
JP (1)	JP2006505135A (en)
KR (1)	KR100960136B1 (en)
CN (1)	CN100437913C (en)
AU (1)	AU2003301768A1 (en)
DE (1)	DE60320440T2 (en)
TW (1)	TWI329339B (en)
WO (1)	WO2004042808A1 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR100611491B1 (en) *	2004-08-26	2006-08-10	엘지이노텍 주식회사	Nitride semiconductor light emitting device and manufacturing method
JP4907999B2 (en) *	2006-01-20	2012-04-04	株式会社東芝	Manufacturing method of semiconductor device
KR100752192B1 (en) *	2006-09-06	2007-08-27	동부일렉트로닉스 주식회사	Flash memory device with single poly structure and manufacturing method thereof
US9512538B2 (en)	2008-12-10	2016-12-06	Novellus Systems, Inc.	Plating cup with contoured cup bottom
US9221081B1 (en)	2011-08-01	2015-12-29	Novellus Systems, Inc.	Automated cleaning of wafer plating assembly
US10066311B2 (en)	2011-08-15	2018-09-04	Lam Research Corporation	Multi-contact lipseals and associated electroplating methods
US9988734B2 (en)	2011-08-15	2018-06-05	Lam Research Corporation	Lipseals and contact elements for semiconductor electroplating apparatuses
US9228270B2 (en)	2011-08-15	2016-01-05	Novellus Systems, Inc.	Lipseals and contact elements for semiconductor electroplating apparatuses
KR102112881B1 (en)	2012-03-28	2020-05-19	노벨러스 시스템즈, 인코포레이티드	Methods and apparatuses for cleaning electroplating substrate holders
KR102092416B1 (en)	2012-03-30	2020-03-24	노벨러스 시스템즈, 인코포레이티드	Cleaning electroplating substrate holders using reverse current deplating
US10416092B2 (en)	2013-02-15	2019-09-17	Lam Research Corporation	Remote detection of plating on wafer holding apparatus
US9746427B2 (en)	2013-02-15	2017-08-29	Novellus Systems, Inc.	Detection of plating on wafer holding apparatus
CN104617080B (en) *	2013-11-05	2017-08-25	中芯国际集成电路制造(上海)有限公司	Test key structure and forming method thereof
US9627608B2 (en) *	2014-09-11	2017-04-18	Lam Research Corporation	Dielectric repair for emerging memory devices
US10053793B2 (en)	2015-07-09	2018-08-21	Lam Research Corporation	Integrated elastomeric lipseal and cup bottom for reducing wafer sticking

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE69019746T2 (en) *	1990-08-29	1996-01-25	Ibm	Overload protection circuit.
JPH0677497A (en) *	1992-08-27	1994-03-18	Mitsubishi Electric Corp	Semiconductor device and its manufacture
JPH06350093A (en) *	1993-06-04	1994-12-22	Toshiba Corp	Method of manufacturing nonvolatile semiconductor memory device
JP3236706B2 (en) *	1993-07-30	2001-12-10	三菱電機株式会社	Nonvolatile semiconductor memory device and method of manufacturing the same
JP2663892B2 (en) *	1994-12-26	1997-10-15	日本電気株式会社	Nonvolatile semiconductor memory device and method of manufacturing the same
JPH09307106A (en) *	1996-05-20	1997-11-28	Nec Corp	Method for manufacturing semiconductor device
US5792761A (en) *	1996-08-12	1998-08-11	Merck & Co., Inc.	Thrombin inhibitors
JPH1197561A (en) *	1997-09-22	1999-04-09	Sony Corp	Nonvolatile semiconductor memory device and method of manufacturing the same
US5972761A (en)	1997-12-29	1999-10-26	Texas Instruments - Acer Incorporated	Method of making MOS transistors with a gate-side air-gap structure and an extension ultra-shallow S/D junction
JP2000260867A (en) *	1999-03-09	2000-09-22	Toshiba Corp	Semiconductor device and method of manufacturing semiconductor device
US6200840B1 (en)	1999-06-25	2001-03-13	United Microelectronics Corp.	Method for producing PMOS devices
JP2001045364A (en) *	1999-07-30	2001-02-16	Fuji Photo Film Co Ltd	Digital camera and operation control method therefor
US6211045B1 (en)	1999-11-30	2001-04-03	Vlsi Technology, Inc.	Incorporation of nitrogen-based gas in polysilicon gate re-oxidation to improve hot carrier performance
KR100444604B1 (en) *	2001-12-22	2004-08-16	주식회사 하이닉스반도체	Method of manufacturing a flash memory cell

2002
- 2002-10-30 US US10/284,866 patent/US6867119B2/en not_active Expired - Lifetime
2003
- 2003-06-10 CN CNB038248379A patent/CN100437913C/en not_active Expired - Fee Related
- 2003-06-10 DE DE60320440T patent/DE60320440T2/en not_active Expired - Lifetime
- 2003-06-10 AU AU2003301768A patent/AU2003301768A1/en not_active Abandoned
- 2003-06-10 WO PCT/US2003/018447 patent/WO2004042808A1/en not_active Ceased
- 2003-06-10 EP EP03741930A patent/EP1556887B1/en not_active Expired - Lifetime
- 2003-06-10 KR KR1020057007330A patent/KR100960136B1/en not_active Expired - Fee Related
- 2003-06-10 JP JP2004549909A patent/JP2006505135A/en active Pending
- 2003-08-03 TW TW092122218A patent/TWI329339B/en not_active IP Right Cessation

Also Published As

Publication number	Publication date
KR20050075760A (en)	2005-07-21
US20040084711A1 (en)	2004-05-06
KR100960136B1 (en)	2010-05-27
WO2004042808A1 (en)	2004-05-21
JP2006505135A (en)	2006-02-09
AU2003301768A1 (en)	2004-06-07
DE60320440T2 (en)	2009-06-18
EP1556887A1 (en)	2005-07-27
EP1556887B1 (en)	2008-04-16
US6867119B2 (en)	2005-03-15
TWI329339B (en)	2010-08-21
TW200410296A (en)	2004-06-16
CN100437913C (en)	2008-11-26
CN1695231A (en)	2005-11-09

Publication	Publication Date	Title
DE60304264D1 (en)	2006-05-18	Estimation of the driver load
DE60328426D1 (en)	2009-08-27	Design of the closure elements
DE60325448D1 (en)	2009-02-05	ste
DE60320440D1 (en)	2008-05-29	NITROGEN OXIDATION OF THE APPLIED MOS-GATE STRUCTURE
DE60326836D1 (en)	2009-05-07	METAL ROPE
EP1490107A4 (en)	2005-11-09	MODULATION OF ANGIOGENESIS
NO20016398D0 (en)	2001-12-27	Mini-power converter I
DE60310171D1 (en)	2007-01-18	Wavelength converter
NO20052356D0 (en)	2005-05-12	rescue
ITMI20022179A1 (en)	2004-04-16	THE MANOPOLER
NO20016399D0 (en)	2001-12-27	Mini-power converter II
FI20020530A0 (en)	2002-03-20	Interferometer
DE50109369D1 (en)	2006-05-18	tapes
DE60213622D1 (en)	2006-09-14	down converter
FR2843451B1 (en)	2005-10-28	FRONDE OF THE LANCE-PIERRES TYPE
DE50307596D1 (en)	2007-08-16	Truck
DE50112288D1 (en)	2007-05-16	tapes
DE50203807D1 (en)	2005-09-08	tape
DE60235314D1 (en)	2010-03-25	Catalytic converter
DE50109277D1 (en)	2006-05-11	tapes
FR2827905B1 (en)	2004-06-18	SECURE LADDERS
DE50312853D1 (en)	2010-08-12	ANALOG-DIGITAL CONVERTER
DE60235550D1 (en)	2010-04-15	DETERMINATION OF THE ZELLANZAHL
FI20011758A0 (en)	2001-09-05	Personal urinator
FR2821994B1 (en)	2003-07-04	ELECTRO-MAGNETO-MECHANICAL CONVERTER

Legal Events

Date	Code	Title	Description
2009-05-07	8364	No opposition during term of opposition