DE60320440D1 - Stickstoff-oxidierung der geätzten mos-gate-struktur - Google Patents

Stickstoff-oxidierung der geätzten mos-gate-struktur

Info

Publication number: DE60320440D1
Authority: DE; Germany
Prior art keywords: gate structure; nitrogen oxidation; mos; applied mos; oxidation
Prior art date: 2002-10-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE60320440T

Other languages

English (en)

Other versions

DE60320440T2 (de

Inventor

Yue-Song He

Richard M Fastow

Zhi-Gang Wang

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Spansion LLC

Original Assignee

Spansion LLC

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-10-30

Filing date

2003-06-10

Publication date

2008-05-29

2003-06-10 Application filed by Spansion LLC filed Critical Spansion LLC

2008-05-29 Publication of DE60320440D1 publication Critical patent/DE60320440D1/de

2009-06-18 Application granted granted Critical

2009-06-18 Publication of DE60320440T2 publication Critical patent/DE60320440T2/de

2023-06-11 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
- H10D64/01354—
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/031—Manufacture or treatment of data-storage electrodes
- H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

DE60320440T 2002-10-30 2003-06-10 Stickstoff-oxidierung der geätzten mos-gate-struktur Expired - Lifetime DE60320440T2 (de)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US284866		2002-10-30
US10/284,866 US6867119B2 (en)	2002-10-30	2002-10-30	Nitrogen oxidation to reduce encroachment
PCT/US2003/018447 WO2004042808A1 (en)	2002-10-30	2003-06-10	Nitrogen oxidation of etched mos gate structure

Publications (2)

Publication Number	Publication Date
DE60320440D1 true DE60320440D1 (de)	2008-05-29
DE60320440T2 DE60320440T2 (de)	2009-06-18

Family

ID=32175000

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE60320440T Expired - Lifetime DE60320440T2 (de)	2002-10-30	2003-06-10	Stickstoff-oxidierung der geätzten mos-gate-struktur

Country Status (9)

Country	Link
US (1)	US6867119B2 (de)
EP (1)	EP1556887B1 (de)
JP (1)	JP2006505135A (de)
KR (1)	KR100960136B1 (de)
CN (1)	CN100437913C (de)
AU (1)	AU2003301768A1 (de)
DE (1)	DE60320440T2 (de)
TW (1)	TWI329339B (de)
WO (1)	WO2004042808A1 (de)

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KR100611491B1 (ko) *	2004-08-26	2006-08-10	엘지이노텍 주식회사	질화물 반도체 발광소자 및 그 제조방법
JP4907999B2 (ja) *	2006-01-20	2012-04-04	株式会社東芝	半導体装置の製造方法
KR100752192B1 (ko) *	2006-09-06	2007-08-27	동부일렉트로닉스 주식회사	단일 폴리 구조의 플래시 메모리 소자 및 그 제조 방법
US9512538B2 (en)	2008-12-10	2016-12-06	Novellus Systems, Inc.	Plating cup with contoured cup bottom
US9221081B1 (en)	2011-08-01	2015-12-29	Novellus Systems, Inc.	Automated cleaning of wafer plating assembly
US10066311B2 (en)	2011-08-15	2018-09-04	Lam Research Corporation	Multi-contact lipseals and associated electroplating methods
US9988734B2 (en)	2011-08-15	2018-06-05	Lam Research Corporation	Lipseals and contact elements for semiconductor electroplating apparatuses
US9228270B2 (en)	2011-08-15	2016-01-05	Novellus Systems, Inc.	Lipseals and contact elements for semiconductor electroplating apparatuses
KR102112881B1 (ko)	2012-03-28	2020-05-19	노벨러스 시스템즈, 인코포레이티드	전자도금 기판 홀더들을 세정하기 위한 방법들 및 장치들
KR102092416B1 (ko)	2012-03-30	2020-03-24	노벨러스 시스템즈, 인코포레이티드	역전류 디플레이팅을 이용한 전기도금 기판 홀더의 클리닝
US10416092B2 (en)	2013-02-15	2019-09-17	Lam Research Corporation	Remote detection of plating on wafer holding apparatus
US9746427B2 (en)	2013-02-15	2017-08-29	Novellus Systems, Inc.	Detection of plating on wafer holding apparatus
CN104617080B (zh) *	2013-11-05	2017-08-25	中芯国际集成电路制造(上海)有限公司	测试键结构及其形成方法
US9627608B2 (en) *	2014-09-11	2017-04-18	Lam Research Corporation	Dielectric repair for emerging memory devices
US10053793B2 (en)	2015-07-09	2018-08-21	Lam Research Corporation	Integrated elastomeric lipseal and cup bottom for reducing wafer sticking

Family Cites Families (14)

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Publication number	Priority date	Publication date	Assignee	Title
DE69019746T2 (de) *	1990-08-29	1996-01-25	Ibm	Überlastungsschutzschaltung.
JPH0677497A (ja) *	1992-08-27	1994-03-18	Mitsubishi Electric Corp	半導体装置およびその製造方法
JPH06350093A (ja) *	1993-06-04	1994-12-22	Toshiba Corp	不揮発性半導体記憶装置の製造方法
JP3236706B2 (ja) *	1993-07-30	2001-12-10	三菱電機株式会社	不揮発性半導体記憶装置およびその製造方法
JP2663892B2 (ja) *	1994-12-26	1997-10-15	日本電気株式会社	不揮発性半導体メモリ装置及びその製造方法
JPH09307106A (ja) *	1996-05-20	1997-11-28	Nec Corp	半導体装置の製造方法
US5792761A (en) *	1996-08-12	1998-08-11	Merck & Co., Inc.	Thrombin inhibitors
JPH1197561A (ja) *	1997-09-22	1999-04-09	Sony Corp	不揮発性半導体記憶装置およびその製造方法
US5972761A (en)	1997-12-29	1999-10-26	Texas Instruments - Acer Incorporated	Method of making MOS transistors with a gate-side air-gap structure and an extension ultra-shallow S/D junction
JP2000260867A (ja) *	1999-03-09	2000-09-22	Toshiba Corp	半導体装置および半導体装置の製造方法
US6200840B1 (en)	1999-06-25	2001-03-13	United Microelectronics Corp.	Method for producing PMOS devices
JP2001045364A (ja) *	1999-07-30	2001-02-16	Fuji Photo Film Co Ltd	ディジタル・カメラおよびその動作制御方法
US6211045B1 (en)	1999-11-30	2001-04-03	Vlsi Technology, Inc.	Incorporation of nitrogen-based gas in polysilicon gate re-oxidation to improve hot carrier performance
KR100444604B1 (ko) *	2001-12-22	2004-08-16	주식회사 하이닉스반도체	플래쉬 메모리 셀의 제조 방법

2002
- 2002-10-30 US US10/284,866 patent/US6867119B2/en not_active Expired - Lifetime
2003
- 2003-06-10 CN CNB038248379A patent/CN100437913C/zh not_active Expired - Fee Related
- 2003-06-10 DE DE60320440T patent/DE60320440T2/de not_active Expired - Lifetime
- 2003-06-10 AU AU2003301768A patent/AU2003301768A1/en not_active Abandoned
- 2003-06-10 WO PCT/US2003/018447 patent/WO2004042808A1/en not_active Ceased
- 2003-06-10 EP EP03741930A patent/EP1556887B1/de not_active Expired - Lifetime
- 2003-06-10 KR KR1020057007330A patent/KR100960136B1/ko not_active Expired - Fee Related
- 2003-06-10 JP JP2004549909A patent/JP2006505135A/ja active Pending
- 2003-08-03 TW TW092122218A patent/TWI329339B/zh not_active IP Right Cessation

Also Published As

Publication number	Publication date
KR20050075760A (ko)	2005-07-21
US20040084711A1 (en)	2004-05-06
KR100960136B1 (ko)	2010-05-27
WO2004042808A1 (en)	2004-05-21
JP2006505135A (ja)	2006-02-09
AU2003301768A1 (en)	2004-06-07
DE60320440T2 (de)	2009-06-18
EP1556887A1 (de)	2005-07-27
EP1556887B1 (de)	2008-04-16
US6867119B2 (en)	2005-03-15
TWI329339B (en)	2010-08-21
TW200410296A (en)	2004-06-16
CN100437913C (zh)	2008-11-26
CN1695231A (zh)	2005-11-09

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DE60328426D1 (de)	2009-08-27	Gestaltung der Verschlusselemente
DE60325448D1 (de)	2009-02-05	ste
DE60320440D1 (de)	2008-05-29	Stickstoff-oxidierung der geätzten mos-gate-struktur
DE60326836D1 (de)	2009-05-07	Metallseil
EP1490107A4 (de)	2005-11-09	Modulation der angiogenese
NO20016398D0 (no)	2001-12-27	Mini-kraftomformer I
DE60310171D1 (de)	2007-01-18	Wellenlängenumsetzer
NO20052356D0 (no)	2005-05-12	Redningsskoyte
ITMI20022179A1 (it)	2004-04-16	Il manopoliero
NO20016399D0 (no)	2001-12-27	Mini-kraftomformer II
FI20020530A0 (fi)	2002-03-20	Interferometri
DE50109369D1 (de)	2006-05-18	Klebebänder
DE60213622D1 (de)	2006-09-14	Abwärtswandler
FR2843451B1 (fr)	2005-10-28	Fronde du type lance-pierres
DE50307596D1 (de)	2007-08-16	Flurförderzeug
DE50112288D1 (de)	2007-05-16	Klebebänder
DE50203807D1 (de)	2005-09-08	Klebestreifen
DE60235314D1 (de)	2010-03-25	Katalytischer Umwandler
DE50109277D1 (de)	2006-05-11	Klebebänder
FR2827905B1 (fr)	2004-06-18	Echelles securisees
DE50312853D1 (de)	2010-08-12	Analog-digital-wandler
DE60235550D1 (de)	2010-04-15	Bestimmung der zellanzahl
FI20011758A0 (fi)	2001-09-05	Henkilökohtainen virtsauslaite
FR2821994B1 (fr)	2003-07-04	Convertisseur electro-magneto-mecanique

Legal Events

Date	Code	Title	Description
2009-05-07	8364	No opposition during term of opposition