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DE60302214D1 - Pumpenanschlusstück für prozesskammer für einzelne halbleiterscheiben frei von emissivitätsänderungen - Google Patents

Pumpenanschlusstück für prozesskammer für einzelne halbleiterscheiben frei von emissivitätsänderungen

Info

Publication number
DE60302214D1
DE60302214D1 DE60302214T DE60302214T DE60302214D1 DE 60302214 D1 DE60302214 D1 DE 60302214D1 DE 60302214 T DE60302214 T DE 60302214T DE 60302214 T DE60302214 T DE 60302214T DE 60302214 D1 DE60302214 D1 DE 60302214D1
Authority
DE
Germany
Prior art keywords
process chamber
single semiconductor
pump connector
emissivity changes
semiconductor discs
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60302214T
Other languages
English (en)
Other versions
DE60302214T2 (de
Inventor
Xiaoliang Jin
Shulin Wang
Lee Luo
Henry Ho
A Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE60302214D1 publication Critical patent/DE60302214D1/de
Publication of DE60302214T2 publication Critical patent/DE60302214T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H10P72/0434—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE60302214T 2002-01-15 2003-01-15 Pumpenanschlusstück für prozesskammer für einzelne halbleiterscheiben frei von emissivitätsänderungen Expired - Lifetime DE60302214T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/051,651 US6802906B2 (en) 2000-07-21 2002-01-15 Emissivity-change-free pumping plate kit in a single wafer chamber
US51651 2002-01-15
PCT/US2003/001347 WO2003060189A1 (en) 2002-01-15 2003-01-15 Emissivity-change-free pumping plate kit in a single wafer chamber

Publications (2)

Publication Number Publication Date
DE60302214D1 true DE60302214D1 (de) 2005-12-15
DE60302214T2 DE60302214T2 (de) 2006-07-27

Family

ID=21972569

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60302214T Expired - Lifetime DE60302214T2 (de) 2002-01-15 2003-01-15 Pumpenanschlusstück für prozesskammer für einzelne halbleiterscheiben frei von emissivitätsänderungen

Country Status (8)

Country Link
US (1) US6802906B2 (de)
EP (1) EP1466033B1 (de)
JP (1) JP4953555B2 (de)
KR (1) KR101014916B1 (de)
CN (1) CN100398696C (de)
AU (1) AU2003210542A1 (de)
DE (1) DE60302214T2 (de)
WO (1) WO2003060189A1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6802906B2 (en) * 2000-07-21 2004-10-12 Applied Materials, Inc. Emissivity-change-free pumping plate kit in a single wafer chamber
US7122844B2 (en) * 2002-05-13 2006-10-17 Cree, Inc. Susceptor for MOCVD reactor
US8366830B2 (en) 2003-03-04 2013-02-05 Cree, Inc. Susceptor apparatus for inverted type MOCVD reactor
KR100522727B1 (ko) * 2003-03-31 2005-10-20 주식회사 아이피에스 박막증착용 반응용기
US7037834B2 (en) * 2004-05-22 2006-05-02 International Business Machines Corporation Constant emissivity deposition member
US20060037702A1 (en) * 2004-08-20 2006-02-23 Tokyo Electron Limited Plasma processing apparatus
KR100672828B1 (ko) * 2005-06-29 2007-01-22 삼성전자주식회사 챔버 인서트 및 이를 포함하는 기판 가공 장치
US20070020890A1 (en) * 2005-07-19 2007-01-25 Applied Materials, Inc. Method and apparatus for semiconductor processing
US20070064004A1 (en) * 2005-09-21 2007-03-22 Hewlett-Packard Development Company, L.P. Moving a graphic element
US20080119059A1 (en) * 2006-11-20 2008-05-22 Smith Jacob W Low thermal budget chemical vapor deposition processing
KR101046520B1 (ko) 2007-09-07 2011-07-04 어플라이드 머티어리얼스, 인코포레이티드 내부 챔버 상의 부산물 막 증착을 제어하기 위한 ｐｅｃｖｄ 시스템에서의 소스 가스 흐름 경로 제어
US9202730B2 (en) 2011-11-03 2015-12-01 Applied Materials, Inc. Rapid thermal processing chamber
US9493874B2 (en) * 2012-11-15 2016-11-15 Cypress Semiconductor Corporation Distribution of gas over a semiconductor wafer in batch processing
US9832816B2 (en) * 2013-06-21 2017-11-28 Applied Materials, Inc. Absorbing reflector for semiconductor processing chamber
CN104250849B (zh) * 2013-06-25 2017-03-22 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室及外延生长设备
US9814099B2 (en) * 2013-08-02 2017-11-07 Applied Materials, Inc. Substrate support with surface feature for reduced reflection and manufacturing techniques for producing same
US10559451B2 (en) * 2017-02-15 2020-02-11 Applied Materials, Inc. Apparatus with concentric pumping for multiple pressure regimes
US11685994B2 (en) * 2019-09-13 2023-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. CVD device pumping liner
US20220084845A1 (en) * 2020-09-17 2022-03-17 Applied Materials, Inc. High conductance process kit
EP4386480A1 (de) * 2022-12-15 2024-06-19 ASML Netherlands B.V. Spülsystem und verfahren für eine lithografische vorrichtung

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JP2662365B2 (ja) * 1993-01-28 1997-10-08 アプライド マテリアルズ インコーポレイテッド 改良された排出システムを有する単一基板式の真空処理装置
US5800686A (en) * 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
US5467220A (en) * 1994-02-18 1995-11-14 Applied Materials, Inc. Method and apparatus for improving semiconductor wafer surface temperature uniformity
US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
JPH08188876A (ja) * 1995-01-09 1996-07-23 Fujitsu Ltd 半導体製造装置及び半導体装置の製造方法
US5895530A (en) 1996-02-26 1999-04-20 Applied Materials, Inc. Method and apparatus for directing fluid through a semiconductor processing chamber
US5846332A (en) * 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US5963840A (en) * 1996-11-13 1999-10-05 Applied Materials, Inc. Methods for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions
US5935334A (en) * 1996-11-13 1999-08-10 Applied Materials, Inc. Substrate processing apparatus with bottom-mounted remote plasma system
US6153260A (en) * 1997-04-11 2000-11-28 Applied Materials, Inc. Method for heating exhaust gas in a substrate reactor
US6077764A (en) * 1997-04-21 2000-06-20 Applied Materials, Inc. Process for depositing high deposition rate halogen-doped silicon oxide layer
US6149974A (en) * 1997-05-05 2000-11-21 Applied Materials, Inc. Method for elimination of TEOS/ozone silicon oxide surface sensitivity
US6176929B1 (en) 1997-07-22 2001-01-23 Ebara Corporation Thin-film deposition apparatus
US6258170B1 (en) * 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus
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WO1999049101A1 (en) * 1998-03-23 1999-09-30 Mattson Technology, Inc. Apparatus and method for cvd and thermal processing of semiconductor substrates
US6117244A (en) * 1998-03-24 2000-09-12 Applied Materials, Inc. Deposition resistant lining for CVD chamber
US6423949B1 (en) * 1999-05-19 2002-07-23 Applied Materials, Inc. Multi-zone resistive heater
US6153261A (en) * 1999-05-28 2000-11-28 Applied Materials, Inc. Dielectric film deposition employing a bistertiarybutylaminesilane precursor
US6530992B1 (en) * 1999-07-09 2003-03-11 Applied Materials, Inc. Method of forming a film in a chamber and positioning a substitute in a chamber
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US6261408B1 (en) * 2000-02-16 2001-07-17 Applied Materials, Inc. Method and apparatus for semiconductor processing chamber pressure control
JP4470274B2 (ja) * 2000-04-26 2010-06-02 東京エレクトロン株式会社 熱処理装置
US6582522B2 (en) * 2000-07-21 2003-06-24 Applied Materials, Inc. Emissivity-change-free pumping plate kit in a single wafer chamber
US6802906B2 (en) * 2000-07-21 2004-10-12 Applied Materials, Inc. Emissivity-change-free pumping plate kit in a single wafer chamber
US6559039B2 (en) * 2001-05-15 2003-05-06 Applied Materials, Inc. Doped silicon deposition process in resistively heated single wafer chamber

Also Published As

Publication number Publication date
EP1466033A1 (de) 2004-10-13
JP2005525693A (ja) 2005-08-25
EP1466033B1 (de) 2005-11-09
KR20040081124A (ko) 2004-09-20
JP4953555B2 (ja) 2012-06-13
CN100398696C (zh) 2008-07-02
CN1610768A (zh) 2005-04-27
KR101014916B1 (ko) 2011-02-15
DE60302214T2 (de) 2006-07-27
WO2003060189A1 (en) 2003-07-24
US20020127508A1 (en) 2002-09-12
AU2003210542A1 (en) 2003-07-30
US6802906B2 (en) 2004-10-12

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Legal Events

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8364 No opposition during term of opposition