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DE602006007889D1 - Belichtungsverfahren und -vorrichtung - Google Patents

Belichtungsverfahren und -vorrichtung

Info

Publication number
DE602006007889D1
DE602006007889D1 DE602006007889T DE602006007889T DE602006007889D1 DE 602006007889 D1 DE602006007889 D1 DE 602006007889D1 DE 602006007889 T DE602006007889 T DE 602006007889T DE 602006007889 T DE602006007889 T DE 602006007889T DE 602006007889 D1 DE602006007889 D1 DE 602006007889D1
Authority
DE
Germany
Prior art keywords
exposure method
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006007889T
Other languages
English (en)
Inventor
Kenji Yamazoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE602006007889D1 publication Critical patent/DE602006007889D1/de
Anticipated expiration legal-status Critical
Active legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70125Use of illumination settings tailored to particular mask patterns
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566Polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE602006007889T 2005-03-01 2006-02-28 Belichtungsverfahren und -vorrichtung Active DE602006007889D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005056007A JP4612849B2 (ja) 2005-03-01 2005-03-01 露光方法、露光装置及びデバイス製造方法

Publications (1)

Publication Number Publication Date
DE602006007889D1 true DE602006007889D1 (de) 2009-09-03

Family

ID=36589082

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006007889T Active DE602006007889D1 (de) 2005-03-01 2006-02-28 Belichtungsverfahren und -vorrichtung

Country Status (6)

Country Link
US (1) US7359033B2 (de)
EP (1) EP1698940B1 (de)
JP (1) JP4612849B2 (de)
KR (1) KR100752492B1 (de)
DE (1) DE602006007889D1 (de)
TW (1) TWI307115B (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4750525B2 (ja) * 2005-10-14 2011-08-17 キヤノン株式会社 露光方法及びデバイス製造方法
EP1857879A1 (de) * 2006-05-15 2007-11-21 Advanced Mask Technology Center GmbH & Co. KG Beleuchtungssystem und Photolithographiegerät
JP4914272B2 (ja) 2007-04-02 2012-04-11 エルピーダメモリ株式会社 投影露光用のレチクル、該投影露光用のレチクルの製造方法及び該レチクルを用いた半導体装置
JP2009043789A (ja) * 2007-08-06 2009-02-26 Elpida Memory Inc パターン形成方法及びマスク
NL1036123A1 (nl) * 2007-11-13 2009-05-14 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
JP2010199347A (ja) * 2009-02-26 2010-09-09 Canon Inc 露光方法及びデバイス製造方法
NL2005738A (en) * 2009-12-15 2011-06-16 Asml Holding Nv Improved polarization designs for lithographic apparatus.
JP6363903B2 (ja) * 2014-07-31 2018-07-25 株式会社キーエンス 光学的情報読取装置
DE102021211975A1 (de) * 2021-10-25 2023-04-27 Carl Zeiss Smt Gmbh Verfahren zur Nachbildung einer Ziel-Wellenfront eines abbildenden optischen Produktions-Systems sowie Metrologiesystem zur Durchführung des Verfahrens

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3119217B2 (ja) * 1997-10-31 2000-12-18 日本電気株式会社 フォトマスクおよびフォトマスクを使用した露光方法
US7217503B2 (en) 2001-04-24 2007-05-15 Canon Kabushiki Kaisha Exposure method and apparatus
JP3937903B2 (ja) 2001-04-24 2007-06-27 キヤノン株式会社 露光方法及び装置
DE10124803A1 (de) * 2001-05-22 2002-11-28 Zeiss Carl Polarisator und Mikrolithographie-Projektionsanlage mit Polarisator
JP3958163B2 (ja) * 2002-09-19 2007-08-15 キヤノン株式会社 露光方法
EP1429190B1 (de) * 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Belichtungsapparat und -verfahren
JP3997199B2 (ja) * 2002-12-10 2007-10-24 キヤノン株式会社 露光方法及び装置
EP1450206B1 (de) * 2003-02-21 2016-04-20 Canon Kabushiki Kaisha Maske und ihr herstellungs- und belichtungsverfahren, herstellungsprozess für halbleiterbauteile
US7090964B2 (en) * 2003-02-21 2006-08-15 Asml Holding N.V. Lithographic printing with polarized light
KR101503992B1 (ko) * 2003-04-09 2015-03-18 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
JP4684584B2 (ja) * 2003-07-23 2011-05-18 キヤノン株式会社 マスク及びその製造方法、並びに、露光方法
TWI379344B (en) * 2004-02-06 2012-12-11 Nikon Corp Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method
TW200600829A (en) * 2004-06-16 2006-01-01 Nikon Corp Optical system, exposure device, and exposure method
WO2006016469A1 (ja) * 2004-08-10 2006-02-16 Nikon Corporation 照明光学装置、露光装置、および露光方法
TWI453796B (zh) * 2005-01-21 2014-09-21 尼康股份有限公司 偏光變更單元以及元件製造方法

Also Published As

Publication number Publication date
EP1698940A3 (de) 2007-12-05
KR20060096896A (ko) 2006-09-13
US20060197934A1 (en) 2006-09-07
TWI307115B (en) 2009-03-01
JP2006245115A (ja) 2006-09-14
EP1698940B1 (de) 2009-07-22
TW200727337A (en) 2007-07-16
JP4612849B2 (ja) 2011-01-12
EP1698940A2 (de) 2006-09-06
KR100752492B1 (ko) 2007-08-27
US7359033B2 (en) 2008-04-15

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