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DE602006005867D1 - Lichtemittierende Vorrichtung und deren Herstellung - Google Patents

Lichtemittierende Vorrichtung und deren Herstellung

Info

Publication number
DE602006005867D1
DE602006005867D1 DE602006005867T DE602006005867T DE602006005867D1 DE 602006005867 D1 DE602006005867 D1 DE 602006005867D1 DE 602006005867 T DE602006005867 T DE 602006005867T DE 602006005867 T DE602006005867 T DE 602006005867T DE 602006005867 D1 DE602006005867 D1 DE 602006005867D1
Authority
DE
Germany
Prior art keywords
manufacture
light emitting
emitting device
light
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006005867T
Other languages
English (en)
Inventor
Hyunjae Lee
Junseok Ha
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
LG Innotek Co Ltd
Original Assignee
LG Electronics Inc
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Electronics Inc, LG Innotek Co Ltd filed Critical LG Electronics Inc
Publication of DE602006005867D1 publication Critical patent/DE602006005867D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
DE602006005867T 2005-07-05 2006-07-05 Lichtemittierende Vorrichtung und deren Herstellung Active DE602006005867D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050060091A KR100606551B1 (ko) 2005-07-05 2005-07-05 발광소자 제조방법

Publications (1)

Publication Number Publication Date
DE602006005867D1 true DE602006005867D1 (de) 2009-05-07

Family

ID=37074609

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006005867T Active DE602006005867D1 (de) 2005-07-05 2006-07-05 Lichtemittierende Vorrichtung und deren Herstellung

Country Status (6)

Country Link
US (1) US7435606B2 (de)
EP (2) EP1783841A3 (de)
JP (1) JP5095143B2 (de)
KR (1) KR100606551B1 (de)
CN (1) CN100448043C (de)
DE (1) DE602006005867D1 (de)

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KR20070047114A (ko) * 2005-11-01 2007-05-04 주식회사 엘지화학 플렉서블 기판을 구비한 소자의 제조방법 및 이에 의해제조된 플렉서블 기판을 구비한 소자
KR100752717B1 (ko) 2006-09-20 2007-08-29 삼성전기주식회사 수직구조 질화갈륨계 발광 다이오드 소자의 제조방법
WO2009004980A1 (ja) * 2007-06-29 2009-01-08 Showa Denko K.K. 発光ダイオードの製造方法
DE102007043902A1 (de) 2007-09-14 2009-03-19 Osram Opto Semiconductors Gmbh Verfahren zum Vereinzeln metallisierter Halbleiterbauelemente
JPWO2009119847A1 (ja) * 2008-03-28 2011-07-28 京セラ株式会社 光学デバイスおよび光学デバイスの製造方法
US8236582B2 (en) 2008-07-24 2012-08-07 Philips Lumileds Lighting Company, Llc Controlling edge emission in package-free LED die
US10147843B2 (en) 2008-07-24 2018-12-04 Lumileds Llc Semiconductor light emitting device including a window layer and a light-directing structure
DE102008049535A1 (de) * 2008-09-29 2010-04-08 Osram Opto Semiconductors Gmbh LED-Modul und Herstellungsverfahren
JP4799606B2 (ja) 2008-12-08 2011-10-26 株式会社東芝 光半導体装置及び光半導体装置の製造方法
JP4994401B2 (ja) 2009-02-04 2012-08-08 エンパイア テクノロジー ディベロップメント エルエルシー 半導体デバイスの製造方法
WO2011069242A1 (en) * 2009-12-09 2011-06-16 Cooledge Lighting Inc. Semiconductor dice transfer-enabling apparatus and method for manufacturing transfer-enabling apparatus
US20110151588A1 (en) * 2009-12-17 2011-06-23 Cooledge Lighting, Inc. Method and magnetic transfer stamp for transferring semiconductor dice using magnetic transfer printing techniques
US8334152B2 (en) * 2009-12-18 2012-12-18 Cooledge Lighting, Inc. Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate
US9461023B2 (en) 2011-10-28 2016-10-04 Bridgelux, Inc. Jetting a highly reflective layer onto an LED assembly
US8652860B2 (en) 2011-01-09 2014-02-18 Bridgelux, Inc. Packaging photon building blocks having only top side connections in a molded interconnect structure
JP5985322B2 (ja) 2012-03-23 2016-09-06 株式会社東芝 半導体発光装置及びその製造方法
TWI528578B (zh) * 2012-03-28 2016-04-01 鴻海精密工業股份有限公司 發光二極體製造方法
WO2013171632A1 (en) * 2012-05-17 2013-11-21 Koninklijke Philips N.V. Method of separating a wafer of semiconductor devices
KR102301870B1 (ko) * 2014-12-26 2021-09-15 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 및 발광 소자 패키지
CN112582509B (zh) * 2019-09-30 2022-07-08 成都辰显光电有限公司 微发光二极管芯片及显示面板
KR20220068059A (ko) 2020-11-18 2022-05-25 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 제조방법

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JPH01115174A (ja) * 1987-10-28 1989-05-08 Nec Corp 発光ダイオードアレイ
JPH02251181A (ja) * 1989-03-24 1990-10-08 Oki Electric Ind Co Ltd 発光ダイオード装置
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JPH10275936A (ja) 1997-03-28 1998-10-13 Rohm Co Ltd 半導体発光素子の製法
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JP2000260760A (ja) 1999-03-11 2000-09-22 Toshiba Corp ウェーハ及び半導体装置の製造方法
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US7053413B2 (en) * 2000-10-23 2006-05-30 General Electric Company Homoepitaxial gallium-nitride-based light emitting device and method for producing
DE10221858A1 (de) * 2002-02-25 2003-09-11 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung desselben
US6818532B2 (en) * 2002-04-09 2004-11-16 Oriol, Inc. Method of etching substrates
US8294172B2 (en) * 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US20030189215A1 (en) * 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
JP2004165226A (ja) * 2002-11-08 2004-06-10 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
DE10253911A1 (de) * 2002-09-30 2004-04-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung
JP4143732B2 (ja) * 2002-10-16 2008-09-03 スタンレー電気株式会社 車載用波長変換素子
JP4295669B2 (ja) * 2003-05-22 2009-07-15 パナソニック株式会社 半導体素子の製造方法
US7019330B2 (en) * 2003-08-28 2006-03-28 Lumileds Lighting U.S., Llc Resonant cavity light emitting device
JP4834951B2 (ja) * 2003-09-29 2011-12-14 ソニー株式会社 Ｌｅｄ素子形成方法
US6884646B1 (en) * 2004-03-10 2005-04-26 Uni Light Technology Inc. Method for forming an LED device with a metallic substrate
JP2007535804A (ja) * 2004-03-15 2007-12-06 ティンギ テクノロジーズ プライベート リミテッド 半導体デバイスの製造
US7064356B2 (en) * 2004-04-16 2006-06-20 Gelcore, Llc Flip chip light emitting diode with micromesas and a conductive mesh

Also Published As

Publication number Publication date
KR100606551B1 (ko) 2006-08-01
JP2007019511A (ja) 2007-01-25
US20070020789A1 (en) 2007-01-25
EP1783841A2 (de) 2007-05-09
EP1748499B1 (de) 2009-03-25
JP5095143B2 (ja) 2012-12-12
EP1783841A3 (de) 2007-05-23
EP1748499A3 (de) 2007-02-28
CN1933196A (zh) 2007-03-21
EP1748499A2 (de) 2007-01-31
US7435606B2 (en) 2008-10-14
CN100448043C (zh) 2008-12-31

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