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DE602005007827D1 - Methode zur Bestimmung einer Beleuchtungseinstellung und Methode zur Übertragung einer Maskenstruktur - Google Patents

Methode zur Bestimmung einer Beleuchtungseinstellung und Methode zur Übertragung einer Maskenstruktur

Info

Publication number
DE602005007827D1
DE602005007827D1 DE602005007827T DE602005007827T DE602005007827D1 DE 602005007827 D1 DE602005007827 D1 DE 602005007827D1 DE 602005007827 T DE602005007827 T DE 602005007827T DE 602005007827 T DE602005007827 T DE 602005007827T DE 602005007827 D1 DE602005007827 D1 DE 602005007827D1
Authority
DE
Germany
Prior art keywords
transmitting
determining
mask structure
lighting setting
lighting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005007827T
Other languages
English (en)
Inventor
Steven George Hansen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of DE602005007827D1 publication Critical patent/DE602005007827D1/de
Anticipated expiration legal-status Critical
Active legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE602005007827T 2004-10-12 2005-09-27 Methode zur Bestimmung einer Beleuchtungseinstellung und Methode zur Übertragung einer Maskenstruktur Active DE602005007827D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US61708504P 2004-10-12 2004-10-12
US11/090,697 US7372540B2 (en) 2004-10-12 2005-03-28 Lithographic apparatus and device manufacturing method

Publications (1)

Publication Number Publication Date
DE602005007827D1 true DE602005007827D1 (de) 2008-08-14

Family

ID=35229667

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005007827T Active DE602005007827D1 (de) 2004-10-12 2005-09-27 Methode zur Bestimmung einer Beleuchtungseinstellung und Methode zur Übertragung einer Maskenstruktur

Country Status (8)

Country Link
US (2) US7372540B2 (de)
EP (1) EP1647862B1 (de)
JP (1) JP2006114898A (de)
KR (1) KR100700367B1 (de)
CN (1) CN1760764B (de)
DE (1) DE602005007827D1 (de)
SG (1) SG121948A1 (de)
TW (1) TWI322335B (de)

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US7372540B2 (en) 2004-10-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070121090A1 (en) * 2005-11-30 2007-05-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007317921A (ja) * 2006-05-26 2007-12-06 Toshiba Corp リソグラフィ・シミュレーション方法及びプログラム
US7493590B1 (en) * 2006-07-11 2009-02-17 Kla-Tencor Technologies Corporation Process window optical proximity correction
US20090191468A1 (en) * 2008-01-29 2009-07-30 International Business Machines Corporation Contact Level Mask Layouts By Introducing Anisotropic Sub-Resolution Assist Features
US20090250760A1 (en) * 2008-04-02 2009-10-08 International Business Machines Corporation Methods of forming high-k/metal gates for nfets and pfets
JP5300354B2 (ja) * 2008-07-11 2013-09-25 キヤノン株式会社 生成方法、原版作成方法、露光方法、デバイス製造方法及びプログラム
US7975246B2 (en) 2008-08-14 2011-07-05 International Business Machines Corporation MEEF reduction by elongation of square shapes
US7943274B2 (en) * 2008-10-07 2011-05-17 United Microelectronics Corp. Mask pattern correction and layout method
US8498469B2 (en) * 2010-03-01 2013-07-30 Synopsys, Inc. Full-field mask error enhancement function
US8631360B2 (en) * 2012-04-17 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Methodology of optical proximity correction optimization
CN104364605B (zh) * 2012-04-18 2017-06-06 科磊股份有限公司 针对极紫外线光罩的临界尺寸均匀性监测
US8881068B2 (en) * 2013-02-05 2014-11-04 Globalfoundries Inc. Optimized optical proximity correction handling for lithographic fills
CN105988300B (zh) * 2015-02-04 2018-03-30 中芯国际集成电路制造(上海)有限公司 用于光学邻近修正的方法
US10216096B2 (en) 2015-08-14 2019-02-26 Kla-Tencor Corporation Process-sensitive metrology systems and methods

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US5253040A (en) * 1990-11-09 1993-10-12 Mitsubishi Denki Kabushiki Kaisha Projection aligner
KR950004968B1 (ko) * 1991-10-15 1995-05-16 가부시키가이샤 도시바 투영노광 장치
JPH06163364A (ja) 1992-11-16 1994-06-10 Fujitsu Ltd 露光装置及びパターン形成方法
US5851701A (en) * 1997-04-01 1998-12-22 Micron Technology, Inc. Atom lithographic mask having diffraction grating and attenuated phase shifters
DE69931690T2 (de) * 1998-04-08 2007-06-14 Asml Netherlands B.V. Lithographischer Apparat
US6930754B1 (en) * 1998-06-30 2005-08-16 Canon Kabushiki Kaisha Multiple exposure method
JP2000147741A (ja) 1998-11-09 2000-05-26 Hitachi Ltd ホトマスク、ホトマスクの製造方法及びパターン形成方法
US6671035B2 (en) * 1999-09-29 2003-12-30 Asml Netherlands B.V. Illuminator for a lithography apparatus, a lithography apparatus comprising such an illuminator, and a manufacturing method employing such a lithography apparatus
US6335130B1 (en) * 2000-05-01 2002-01-01 Asml Masktools Netherlands B.V. System and method of providing optical proximity correction for features using phase-shifted halftone transparent/semi-transparent features
US6358856B1 (en) * 2000-11-21 2002-03-19 Advanced Micro Devices, Inc. Bright field image reversal for contact hole patterning
TWI285295B (en) * 2001-02-23 2007-08-11 Asml Netherlands Bv Illumination optimization in lithography
US6738201B2 (en) * 2001-03-30 2004-05-18 Intel Corporation Combined on-axis and off-axis illumination
JP3937903B2 (ja) 2001-04-24 2007-06-27 キヤノン株式会社 露光方法及び装置
JP2002324743A (ja) 2001-04-24 2002-11-08 Canon Inc 露光方法及び装置
US7217503B2 (en) 2001-04-24 2007-05-15 Canon Kabushiki Kaisha Exposure method and apparatus
TW530336B (en) * 2001-08-21 2003-05-01 Asml Masktools Bv Lithographic method and lithographic apparatus
US6664011B2 (en) * 2001-12-05 2003-12-16 Taiwan Semiconductor Manufacturing Company Hole printing by packing and unpacking using alternating phase-shifting masks
WO2003075328A1 (en) * 2002-03-01 2003-09-12 Nikon Corporation Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method, exposure device, program, and device manufacturing method
EP1349003A3 (de) * 2002-03-25 2004-04-07 ASML Masktools B.V. Verfahren und Vorrichtung zum regelbasierten Schrumpfen von Gates zur Benutzung mit Dipolbelichtung
JP3759914B2 (ja) 2002-04-30 2006-03-29 松下電器産業株式会社 フォトマスク及びそれを用いたパターン形成方法
ATE432506T1 (de) * 2002-07-01 2009-06-15 Tibotec Pharm Ltd Mutationsprofile bei mit phänotypischer medikamentenresistenz korrelierter hiv-1-protease
JP3971255B2 (ja) 2002-07-03 2007-09-05 株式会社東芝 露光量モニタ方法及び半導体デバイスの製造方法
US7172838B2 (en) * 2002-09-27 2007-02-06 Wilhelm Maurer Chromeless phase mask layout generation
DE10253679A1 (de) * 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
TWI257524B (en) * 2002-12-09 2006-07-01 Asml Netherlands Bv A method for determining parameters for lithographic projection, a computer system and computer program therefor, a method of manufacturing a device and a device manufactured thereby
TWI277827B (en) * 2003-01-14 2007-04-01 Asml Masktools Bv Method of optical proximity correction design for contact hole mask
US6839125B2 (en) * 2003-02-11 2005-01-04 Asml Netherlands B.V. Method for optimizing an illumination source using full resist simulation and process window response metric
US7030966B2 (en) * 2003-02-11 2006-04-18 Asml Netherlands B.V. Lithographic apparatus and method for optimizing an illumination source using photolithographic simulations
JP2004251969A (ja) 2003-02-18 2004-09-09 Renesas Technology Corp 位相シフトマスク、位相シフトマスクを用いたパターンの形成方法および電子デバイスの製造方法
JP4886169B2 (ja) 2003-02-21 2012-02-29 キヤノン株式会社 マスク及びその設計方法、露光方法、並びに、デバイス製造方法
US7506299B2 (en) * 2003-12-19 2009-03-17 Asml Holding N.V. Feature optimization using interference mapping lithography
US7372540B2 (en) 2004-10-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060146307A1 (en) * 2004-12-30 2006-07-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101054946B1 (ko) * 2005-02-23 2011-08-08 삼성전자주식회사 전압 레벨 조정 기능을 가진 시스템 온 칩 및 전압 레벨 조정 방법
US20060256311A1 (en) * 2005-05-16 2006-11-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
EP1647862B1 (de) 2008-07-02
US20060078805A1 (en) 2006-04-13
US7372540B2 (en) 2008-05-13
US20080180649A1 (en) 2008-07-31
SG121948A1 (en) 2006-05-26
KR100700367B1 (ko) 2007-03-28
CN1760764A (zh) 2006-04-19
TW200627078A (en) 2006-08-01
US7898644B2 (en) 2011-03-01
CN1760764B (zh) 2011-02-16
TWI322335B (en) 2010-03-21
EP1647862A1 (de) 2006-04-19
KR20060092965A (ko) 2006-08-23
JP2006114898A (ja) 2006-04-27

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