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DE602005007563D1 - Lithografische Vorrichtung und Verfahren zur Herstellung einer Vorrichtung - Google Patents

Lithografische Vorrichtung und Verfahren zur Herstellung einer Vorrichtung

Info

Publication number
DE602005007563D1
DE602005007563D1 DE602005007563T DE602005007563T DE602005007563D1 DE 602005007563 D1 DE602005007563 D1 DE 602005007563D1 DE 602005007563 T DE602005007563 T DE 602005007563T DE 602005007563 T DE602005007563 T DE 602005007563T DE 602005007563 D1 DE602005007563 D1 DE 602005007563D1
Authority
DE
Germany
Prior art keywords
making
lithographic apparatus
lithographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602005007563T
Other languages
English (en)
Inventor
Patricius A J Tinnemans
Johannes J M Baselmans
Laurentius C Jorritsma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of DE602005007563D1 publication Critical patent/DE602005007563D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
DE602005007563T 2004-12-27 2005-12-15 Lithografische Vorrichtung und Verfahren zur Herstellung einer Vorrichtung Expired - Lifetime DE602005007563D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/020,642 US7126672B2 (en) 2004-12-27 2004-12-27 Lithographic apparatus and device manufacturing method

Publications (1)

Publication Number Publication Date
DE602005007563D1 true DE602005007563D1 (de) 2008-07-31

Family

ID=35892520

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005007563T Expired - Lifetime DE602005007563D1 (de) 2004-12-27 2005-12-15 Lithografische Vorrichtung und Verfahren zur Herstellung einer Vorrichtung

Country Status (8)

Country Link
US (2) US7126672B2 (de)
EP (1) EP1674934B1 (de)
JP (1) JP4223036B2 (de)
KR (1) KR100734594B1 (de)
CN (1) CN100524030C (de)
DE (1) DE602005007563D1 (de)
SG (1) SG123688A1 (de)
TW (1) TW200629000A (de)

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US8994920B1 (en) 2010-05-07 2015-03-31 Kenneth C. Johnson Optical systems and methods for absorbance modulation
US9188874B1 (en) 2011-05-09 2015-11-17 Kenneth C. Johnson Spot-array imaging system for maskless lithography and parallel confocal microscopy
US9097983B2 (en) * 2011-05-09 2015-08-04 Kenneth C. Johnson Scanned-spot-array EUV lithography system
US7126672B2 (en) * 2004-12-27 2006-10-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317510B2 (en) * 2004-12-27 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE602006002044D1 (de) * 2005-02-23 2008-09-18 Asml Masktools Bv Methode und Apparat zur Optimierung der Beleuchtung einer Schicht eines vollständigen Chips
US7209275B2 (en) * 2005-06-30 2007-04-24 Asml Holding N.V. Method and system for maskless lithography real-time pattern rasterization and using computationally coupled mirrors to achieve optimum feature representation
DE102006019963B4 (de) * 2006-04-28 2023-12-07 Envisiontec Gmbh Vorrichtung und Verfahren zur Herstellung eines dreidimensionalen Objekts durch schichtweises Verfestigen eines unter Einwirkung von elektromagnetischer Strahlung verfestigbaren Materials mittels Maskenbelichtung
US7695950B2 (en) * 2006-05-17 2010-04-13 E. I. Du Pont De Nemours And Company Δ5 desaturase and its use in making polyunsaturated fatty acids
US7707538B2 (en) * 2007-06-15 2010-04-27 Brion Technologies, Inc. Multivariable solver for optical proximity correction
US20090199152A1 (en) * 2008-02-06 2009-08-06 Micronic Laser Systems Ab Methods and apparatuses for reducing mura effects in generated patterns
KR101680754B1 (ko) * 2010-02-18 2016-12-13 삼성디스플레이 주식회사 광학 헤드의 중첩 거리 결정 방법 및 이를 이용한 디지털 노광 장치
JP5709465B2 (ja) * 2010-10-29 2015-04-30 キヤノン株式会社 描画装置、および、物品の製造方法
US8660786B2 (en) * 2011-08-17 2014-02-25 Raytheon Company Positioning module
JP5815887B2 (ja) * 2011-11-29 2015-11-17 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置、デバイス製造方法およびコンピュータプログラム
NL2009817A (en) 2011-12-06 2013-06-10 Asml Netherlands Bv A lithography apparatus, an apparatus for providing setpoint data, a device manufacturing method, a method of calculating setpoint data and a computer program.
NL2010020A (en) 2012-01-17 2013-07-18 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
US8584057B2 (en) * 2012-03-01 2013-11-12 Taiwan Semiconductor Manufacturing Copmany, Ltd. Non-directional dithering methods
TWI594081B (zh) 2012-03-26 2017-08-01 尼康股份有限公司 基板處理裝置、處理裝置及元件製造方法
WO2014140047A2 (en) * 2013-03-12 2014-09-18 Micronic Mydata AB Method and device for writing photomasks with reduced mura errors
US9754360B2 (en) 2014-12-22 2017-09-05 The Research Foundation For The State University Of New York Determination of spatial distribution of charged particle beams
JP6723564B2 (ja) * 2018-02-20 2020-07-15 株式会社ピーエムティー 露光方法
KR102637105B1 (ko) * 2018-07-13 2024-02-15 삼성전자주식회사 영상 데이터를 처리하는 방법 및 장치

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US5523193A (en) 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
WO1991017483A1 (de) 1990-05-02 1991-11-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Belichtungsvorrichtung
US5229872A (en) 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
US6219015B1 (en) 1992-04-28 2001-04-17 The Board Of Directors Of The Leland Stanford, Junior University Method and apparatus for using an array of grating light valves to produce multicolor optical images
JP3224041B2 (ja) 1992-07-29 2001-10-29 株式会社ニコン 露光方法及び装置
US5729331A (en) 1993-06-30 1998-03-17 Nikon Corporation Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus
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DE69729659T2 (de) 1996-02-28 2005-06-23 Johnson, Kenneth C., Santa Clara Mikrolinsen-rastereinrichtung für mikrolithografie und für konfokale mikroskopie mit grossem aufnahmefeld
ATE216091T1 (de) 1997-01-29 2002-04-15 Micronic Laser Systems Ab Verfahren und gerät zur erzeugung eines musters auf einem mit fotoresist beschichteten substrat mittels fokusiertem laserstrahl
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SE509062C2 (sv) 1997-02-28 1998-11-30 Micronic Laser Systems Ab Dataomvandlingsmetod för en laserskrivare med flera strålar för mycket komplexa mikrokolitografiska mönster
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US6720565B2 (en) * 1999-06-30 2004-04-13 Applied Materials, Inc. Real-time prediction of and correction of proximity resist heating in raster scan particle beam lithography
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US7050155B2 (en) 2001-10-30 2006-05-23 Pixelligent Technologies Llc Advanced exposure techniques for programmable lithography
JP2005533365A (ja) * 2001-11-07 2005-11-04 アプライド　マテリアルズ　インコーポレイテッド マスクレスの光子−電子スポット格子アレイ印刷装置
EP1446703A2 (de) * 2001-11-07 2004-08-18 Applied Materials, Inc. Matrixbelichtungsgerät
JP3563384B2 (ja) 2001-11-08 2004-09-08 大日本スクリーン製造株式会社 画像記録装置
CN1332267C (zh) 2002-06-12 2007-08-15 Asml荷兰有限公司 光刻装置和器件的制造方法
US6870554B2 (en) 2003-01-07 2005-03-22 Anvik Corporation Maskless lithography with multiplexed spatial light modulators
EP1482373A1 (de) 2003-05-30 2004-12-01 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
SG125970A1 (en) * 2003-12-19 2006-10-30 Asml Masktools Bv Feature optimization using interference mapping lithography
US7317510B2 (en) * 2004-12-27 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7126672B2 (en) 2004-12-27 2006-10-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
TW200629000A (en) 2006-08-16
CN100524030C (zh) 2009-08-05
SG123688A1 (en) 2006-07-26
US7239373B2 (en) 2007-07-03
JP2006186364A (ja) 2006-07-13
JP4223036B2 (ja) 2009-02-12
EP1674934A1 (de) 2006-06-28
US7126672B2 (en) 2006-10-24
CN1797207A (zh) 2006-07-05
US20070030470A1 (en) 2007-02-08
KR100734594B1 (ko) 2007-07-02
US20060139600A1 (en) 2006-06-29
KR20060074870A (ko) 2006-07-03
EP1674934B1 (de) 2008-06-18

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