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DE60139406D1 - Sputtering-target, das wenig partikel produziert, belagträgerplatte mit dem target und verfahren zur herstellung des targets - Google Patents

Sputtering-target, das wenig partikel produziert, belagträgerplatte mit dem target und verfahren zur herstellung des targets

Info

Publication number
DE60139406D1
DE60139406D1 DE60139406T DE60139406T DE60139406D1 DE 60139406 D1 DE60139406 D1 DE 60139406D1 DE 60139406 T DE60139406 T DE 60139406T DE 60139406 T DE60139406 T DE 60139406T DE 60139406 D1 DE60139406 D1 DE 60139406D1
Authority
DE
Germany
Prior art keywords
target
manufacturing
carrier plate
producing little
little particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60139406T
Other languages
English (en)
Inventor
T Okabe
Y Yamakoshi
H Miyashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Mining Holdings Inc
Original Assignee
Nippon Mining and Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining and Metals Co Ltd filed Critical Nippon Mining and Metals Co Ltd
Application granted granted Critical
Publication of DE60139406D1 publication Critical patent/DE60139406D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)
DE60139406T 2000-11-17 2001-05-23 Sputtering-target, das wenig partikel produziert, belagträgerplatte mit dem target und verfahren zur herstellung des targets Expired - Lifetime DE60139406D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000350475 2000-11-17
PCT/JP2001/004297 WO2002040733A1 (en) 2000-11-17 2001-05-23 Sputtering target producing few particles, backing plate or sputtering apparatus and sputtering method producing few particles

Publications (1)

Publication Number Publication Date
DE60139406D1 true DE60139406D1 (de) 2009-09-10

Family

ID=18823699

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60139406T Expired - Lifetime DE60139406D1 (de) 2000-11-17 2001-05-23 Sputtering-target, das wenig partikel produziert, belagträgerplatte mit dem target und verfahren zur herstellung des targets

Country Status (7)

Country Link
US (1) US6858116B2 (de)
EP (1) EP1312695B1 (de)
JP (1) JP3895277B2 (de)
KR (1) KR100631275B1 (de)
DE (1) DE60139406D1 (de)
TW (1) TWI249581B (de)
WO (1) WO2002040733A1 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100600973B1 (ko) * 2001-12-19 2006-07-13 닛코킨조쿠 가부시키가이샤 자성체 타겟트와 배킹 플레이트와의 접합방법 및 자성체 타겟트와 배킹 플레이트와의 조립체
JP2004165655A (ja) * 2002-10-25 2004-06-10 Semiconductor Energy Lab Co Ltd スパッタリング装置及び薄膜の作製方法
US20040084305A1 (en) * 2002-10-25 2004-05-06 Semiconductor Energy Laboratory Co., Ltd. Sputtering system and manufacturing method of thin film
JP4422975B2 (ja) * 2003-04-03 2010-03-03 株式会社コベルコ科研 スパッタリングターゲットおよびその製造方法
US7297247B2 (en) * 2003-05-06 2007-11-20 Applied Materials, Inc. Electroformed sputtering target
US7682667B2 (en) 2003-10-22 2010-03-23 Nishinippon Plant Engineering And Construction Co., Ltd. Method of thermal spraying
JP4502622B2 (ja) * 2003-10-22 2010-07-14 九州電力株式会社 溶射方法
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
US9472383B2 (en) * 2003-12-25 2016-10-18 Jx Nippon Mining & Metals Corporation Copper or copper alloy target/copper alloy backing plate assembly
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
EP2236644A3 (de) * 2004-11-17 2012-01-04 JX Nippon Mining & Metals Corporation Trägerplattenanordnung Für Sputtertargets Und Filmabscheidungssystem
JP4894158B2 (ja) * 2005-04-20 2012-03-14 東ソー株式会社 真空装置用部品
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
KR20080031473A (ko) * 2005-07-27 2008-04-08 어플라이드 머티어리얼스, 인코포레이티드 입자 형성을 방지하기 위한 ｃｖｄ 차단 플레이트용 부동화기술
US7554052B2 (en) * 2005-07-29 2009-06-30 Applied Materials, Inc. Method and apparatus for the application of twin wire arc spray coatings
US7762114B2 (en) * 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8647484B2 (en) 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
JP4910465B2 (ja) * 2006-04-18 2012-04-04 東ソー株式会社 真空装置部材、その製造方法および真空装置
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
KR101040076B1 (ko) * 2006-06-29 2011-06-09 Jx닛코 닛세끼 킨조쿠 가부시키가이샤 스퍼터링 타겟트/배킹 플레이트 접합체
JP5215192B2 (ja) * 2007-01-05 2013-06-19 株式会社東芝 スパッタリングターゲット
US7981262B2 (en) * 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
EP2806048B1 (de) * 2007-02-09 2017-10-11 JX Nippon Mining & Metals Corporation Aus einer sinterungsresistenten Metalllegierung mit hohem Schmelzpunkt geformtes Target, Metallsilicid mit hohem Schmelzpunkt, Metallcarbid mit hohem Schmelzpunkt, Metallnitrid mit hohem Schmelzpunkt oder Metallborid mit hohem Schmelzpunkt, Verfahren zur Herstellung des Targets, Anordnung für eine Sputter-Target-Rückplatte und Herstellungsverfahren dafür
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8968536B2 (en) * 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US20090084317A1 (en) * 2007-09-28 2009-04-02 Applied Materials, Inc. Atomic layer deposition chamber and components
US7901552B2 (en) * 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
MX2010004438A (es) * 2007-11-01 2010-05-05 Sumitomo Metal Ind Punzon de perforacion y laminacion para uso reciclado en un tren de perforacion y laminacion a ser empleado en la perforacion y laminacion de tubos de acero sin costura, procedimiento y linea de equipos para regenerar dicho punzon.
US20100089744A1 (en) * 2008-10-10 2010-04-15 Chia-Liang Chueh Method for Improving Adhesion of Films to Process Kits
JP5694360B2 (ja) 2010-10-27 2015-04-01 Jx日鉱日石金属株式会社 スパッタリングターゲット−バッキングプレート接合体及びその製造方法
JP6755802B2 (ja) * 2014-09-30 2020-09-16 株式会社東芝 スパッタリングターゲット構造体およびスパッタリングターゲット構造体の製造方法
JP6116632B2 (ja) * 2015-08-28 2017-04-19 三菱マテリアル株式会社 スパッタリング用シリコンターゲット材及びそのターゲット材に割れ防止層を形成する方法
US10655212B2 (en) * 2016-12-15 2020-05-19 Honeywell Internatonal Inc Sputter trap having multimodal particle size distribution
US11584985B2 (en) 2018-08-13 2023-02-21 Honeywell International Inc. Sputter trap having a thin high purity coating layer and method of making the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0774436B2 (ja) * 1990-09-20 1995-08-09 富士通株式会社 薄膜形成方法
JP2642556B2 (ja) * 1992-02-05 1997-08-20 新日本製鐵株式会社 溶射皮膜形成方法
US5965278A (en) 1993-04-02 1999-10-12 Ppg Industries Ohio, Inc. Method of making cathode targets comprising silicon
JPH09272965A (ja) * 1996-04-09 1997-10-21 Toshiba Corp 真空成膜装置用部品とそれを用いた真空成膜装置、およびターゲット、バッキングプレート
US6030514A (en) * 1997-05-02 2000-02-29 Sony Corporation Method of reducing sputtering burn-in time, minimizing sputtered particulate, and target assembly therefor
JPH11236663A (ja) * 1998-02-25 1999-08-31 Seiko Epson Corp スパッタリングターゲット、スパッタリング装置およびスパッタリング方法
JP3791829B2 (ja) * 2000-08-25 2006-06-28 株式会社日鉱マテリアルズ パーティクル発生の少ないスパッタリングターゲット

Also Published As

Publication number Publication date
JP3895277B2 (ja) 2007-03-22
KR20030051835A (ko) 2003-06-25
EP1312695A1 (de) 2003-05-21
EP1312695A4 (de) 2005-11-09
US20030116425A1 (en) 2003-06-26
KR100631275B1 (ko) 2006-10-02
WO2002040733A1 (en) 2002-05-23
EP1312695B1 (de) 2009-07-29
US6858116B2 (en) 2005-02-22
JPWO2002040733A1 (ja) 2004-03-25
TWI249581B (en) 2006-02-21

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