DE60128647D1 - Sigec halbleiterkristall und seine herstellung - Google Patents

Sigec halbleiterkristall und seine herstellung

Info

Publication number: DE60128647D1
Authority: DE; Germany
Prior art keywords: manufacture; semiconductor crystal; sigec semiconductor; sigec; crystal
Prior art date: 2000-03-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE60128647T

Other languages

English (en)

Other versions

DE60128647T2 (de

Inventor

Tohru Saitoh

Yoshihiko Kanzawa

Katsuya Nozawa

Minoru Kubo

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Panasonic Corp

Original Assignee

Matsushita Electric Industrial Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2000-03-27

Filing date

2001-03-27

Publication date

2007-07-12

2001-03-27 Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd

2007-07-12 Application granted granted Critical

2007-07-12 Publication of DE60128647D1 publication Critical patent/DE60128647D1/de

2007-09-20 Publication of DE60128647T2 publication Critical patent/DE60128647T2/de

2021-03-28 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H10P95/90—
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
- H10P14/24—
- H10P14/3208—
- H10P14/3211—
- H10P14/3252—
- H10P14/3408—
- H10P14/3411—
- H10P14/3444—
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12674—Ge- or Si-base component
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Inorganic Chemistry (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Bipolar Transistors (AREA)
Recrystallisation Techniques (AREA)
Chemical Vapour Deposition (AREA)
Junction Field-Effect Transistors (AREA)

DE60128647T 2000-03-27 2001-03-27 Sigec halbleiterkristall und seine herstellung Expired - Lifetime DE60128647T2 (de)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2000086154		2000-03-27
JP2000086154		2000-03-27
PCT/JP2001/002524 WO2001073852A1 (en)	2000-03-27	2001-03-27	Sigec semiconductor crystal and production method thereof

Publications (2)

Publication Number	Publication Date
DE60128647D1 true DE60128647D1 (de)	2007-07-12
DE60128647T2 DE60128647T2 (de)	2007-09-20

Family

ID=18602367

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE60128647T Expired - Lifetime DE60128647T2 (de)	2000-03-27	2001-03-27	Sigec halbleiterkristall und seine herstellung

Country Status (8)

Country	Link
US (2)	US6537369B1 (de)
EP (1)	EP1220320B1 (de)
JP (1)	JP4077629B2 (de)
KR (1)	KR100467179B1 (de)
CN (1)	CN1180483C (de)
DE (1)	DE60128647T2 (de)
TW (1)	TW515100B (de)
WO (1)	WO2001073852A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP1020900B1 (de) *	1999-01-14	2009-08-05	Panasonic Corporation	Halbleiterbauelement und Verfahren zu dessen Herstellung
TW515100B (en) *	2000-03-27	2002-12-21	Matsushita Electric Industrial Co Ltd	SiGeC semiconductor crystal and production method thereof
US6852602B2 (en) *	2001-01-31	2005-02-08	Matsushita Electric Industrial Co., Ltd.	Semiconductor crystal film and method for preparation thereof
JP2003045884A (ja) *	2001-07-31	2003-02-14	Fujitsu Ltd	半導体装置及びその製造方法
JP3719998B2 (ja) *	2002-04-01	2005-11-24	松下電器産業株式会社	半導体装置の製造方法
AU2003266021A1 (en) *	2002-09-10	2004-04-30	California Institute Of Technology	High-capacity nanostructured silicon and lithium alloys thereof
US6909186B2 (en) *	2003-05-01	2005-06-21	International Business Machines Corporation	High performance FET devices and methods therefor
US20040235228A1 (en) *	2003-05-22	2004-11-25	Chidambaram Pr.	System and method for depositing a graded carbon layer to enhance critical layer stability
TWI263709B (en) *	2004-02-17	2006-10-11	Ind Tech Res Inst	Structure of strain relaxed thin Si/Ge epitaxial layer and fabricating method thereof
WO2005083161A1 (ja) *	2004-02-27	2005-09-09	Japan Science And Technology Agency	遷移金属又は稀土類金属などの磁性不純物を含まず、不完全な殻を持つ元素を固溶した透明強磁性化合物及びその強磁性特性の調整方法
US7781102B2 (en) *	2004-04-22	2010-08-24	California Institute Of Technology	High-capacity nanostructured germanium-containing materials and lithium alloys thereof
US7658026B2 (en) *	2006-10-27	2010-02-09	Laser Band, Llc	Wristband with snap closure and patent id label
KR100593747B1 (ko) *	2004-10-11	2006-06-28	삼성전자주식회사	실리콘게르마늄층을 구비하는 반도체 구조물 및 그 제조방법
US7391058B2 (en) *	2005-06-27	2008-06-24	General Electric Company	Semiconductor devices and methods of making same
DE102005036669A1 (de) *	2005-08-04	2007-02-08	Forschungszentrum Rossendorf E.V.	Verfahren zur Behandlung von Halbleitersubstratoberflächen, die mittels intensiven Lichtimpulsen kurzzeitig aufgeschmolzen werden
US7560354B2 (en) *	2007-08-08	2009-07-14	Freescale Semiconductor, Inc.	Process of forming an electronic device including a doped semiconductor layer
SE533944C2 (sv) *	2008-12-19	2011-03-08	Henry H Radamson	En flerlagersstruktur
JP2016139698A (ja) *	2015-01-27	2016-08-04	フェニテックセミコンダクター株式会社	炭化珪素半導体装置の製造方法及び炭化珪素半導体装置
US20200135489A1 (en) *	2018-10-31	2020-04-30	Atomera Incorporated	Method for making a semiconductor device including a superlattice having nitrogen diffused therein

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2569058B2 (ja)	1987-07-10	1997-01-08	株式会社日立製作所	半導体装置
JP2798576B2 (ja)	1993-01-27	1998-09-17	日本電気株式会社	シリコン膜の成長方法
US5523592A (en) *	1993-02-03	1996-06-04	Hitachi, Ltd.	Semiconductor optical device, manufacturing method for the same, and opto-electronic integrated circuit using the same
EP0799495A4 (de) *	1994-11-10	1999-11-03	Lawrence Semiconductor Researc	Silizium-germanium-kohlenstoff-verbindung und dazugehörende prozesse
US6403975B1 (en)	1996-04-09	2002-06-11	Max-Planck Gesellschaft Zur Forderung Der Wissenschafteneev	Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates
EP0812023A1 (de) *	1996-04-09	1997-12-10	Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.	Halbleiterbauteile, insbesondere Photodetektoren, lichtemittierende Dioden, optische Modulatoren und Wellenleiter mit einer auf einem Siliziumsubstrat angebrachten Mehrschichtstruktur
US6399970B2 (en) *	1996-09-17	2002-06-04	Matsushita Electric Industrial Co., Ltd.	FET having a Si/SiGeC heterojunction channel
CN1168147C (zh) *	1999-01-14	2004-09-22	松下电器产业株式会社	半导体结晶的制造方法
JP3516623B2 (ja) *	1999-01-14	2004-04-05	松下電器産業株式会社	半導体結晶の製造方法
TW515100B (en) *	2000-03-27	2002-12-21	Matsushita Electric Industrial Co Ltd	SiGeC semiconductor crystal and production method thereof

2001
- 2001-03-27 TW TW090107221A patent/TW515100B/zh not_active IP Right Cessation
- 2001-03-27 WO PCT/JP2001/002524 patent/WO2001073852A1/ja not_active Ceased
- 2001-03-27 CN CNB018006876A patent/CN1180483C/zh not_active Expired - Fee Related
- 2001-03-27 KR KR10-2001-7015162A patent/KR100467179B1/ko not_active Expired - Fee Related
- 2001-03-27 JP JP2001571476A patent/JP4077629B2/ja not_active Expired - Fee Related
- 2001-03-27 DE DE60128647T patent/DE60128647T2/de not_active Expired - Lifetime
- 2001-03-27 EP EP01915872A patent/EP1220320B1/de not_active Expired - Lifetime
- 2001-03-27 US US09/979,881 patent/US6537369B1/en not_active Expired - Lifetime
2003
- 2003-03-10 US US10/383,743 patent/US6660393B2/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
WO2001073852A1 (en)	2001-10-04
DE60128647T2 (de)	2007-09-20
EP1220320B1 (de)	2007-05-30
EP1220320A1 (de)	2002-07-03
US6660393B2 (en)	2003-12-09
KR20020019036A (ko)	2002-03-09
TW515100B (en)	2002-12-21
JP4077629B2 (ja)	2008-04-16
CN1180483C (zh)	2004-12-15
US20030165697A1 (en)	2003-09-04
EP1220320A4 (de)	2004-12-29
KR100467179B1 (ko)	2005-01-24
CN1365522A (zh)	2002-08-21
US6537369B1 (en)	2003-03-25

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Legal Events

Date	Code	Title	Description
2008-06-19	8364	No opposition during term of opposition
2009-05-07	8327	Change in the person/name/address of the patent owner	Owner name: PANASONIC CORP., KADOMA, OSAKA, JP