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DE60045126D1 - Oxidation einer auf einer germaniumschicht aufgebrachten siliziumschicht - Google Patents

Oxidation einer auf einer germaniumschicht aufgebrachten siliziumschicht

Info

Publication number
DE60045126D1
DE60045126D1 DE60045126T DE60045126T DE60045126D1 DE 60045126 D1 DE60045126 D1 DE 60045126D1 DE 60045126 T DE60045126 T DE 60045126T DE 60045126 T DE60045126 T DE 60045126T DE 60045126 D1 DE60045126 D1 DE 60045126D1
Authority
DE
Germany
Prior art keywords
oxidation
layer
germanium
silicon layer
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60045126T
Other languages
English (en)
Inventor
Hsin-Chiao Luan
Lionel C Kimerling
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Massachusetts Institute of Technology
Original Assignee
Massachusetts Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Institute of Technology filed Critical Massachusetts Institute of Technology
Application granted granted Critical
Publication of DE60045126D1 publication Critical patent/DE60045126D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H10D64/01356—
    • H10P14/24—
    • H10P14/2905—
    • H10P14/3211—
    • H10P14/3411—
    • H10P14/36—
    • H10P14/3802—
    • H10P14/3822—
    • H10P95/90—
    • H10P14/6308—
    • H10P14/6309—
    • H10P14/6322—
    • H10P14/69215—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Formation Of Insulating Films (AREA)
DE60045126T 1999-06-25 2000-06-23 Oxidation einer auf einer germaniumschicht aufgebrachten siliziumschicht Expired - Lifetime DE60045126D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14114299P 1999-06-25 1999-06-25
PCT/US2000/017496 WO2001001466A1 (en) 1999-06-25 2000-06-23 Oxidation of silicon on germanium

Publications (1)

Publication Number Publication Date
DE60045126D1 true DE60045126D1 (de) 2010-12-02

Family

ID=22494354

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60039875T Expired - Lifetime DE60039875D1 (de) 1999-06-25 2000-06-23 Zyklisches thermisches ausheilverfahren zur reduktion von kristallversetzungen
DE60045126T Expired - Lifetime DE60045126D1 (de) 1999-06-25 2000-06-23 Oxidation einer auf einer germaniumschicht aufgebrachten siliziumschicht

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE60039875T Expired - Lifetime DE60039875D1 (de) 1999-06-25 2000-06-23 Zyklisches thermisches ausheilverfahren zur reduktion von kristallversetzungen

Country Status (5)

Country Link
US (2) US6635110B1 (de)
EP (2) EP1192646B1 (de)
DE (2) DE60039875D1 (de)
TW (2) TW449834B (de)
WO (2) WO2001001465A1 (de)

Families Citing this family (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002270516A (ja) * 2001-03-07 2002-09-20 Nec Corp Ｉｉｉ族窒化物半導体の成長方法、ｉｉｉ族窒化物半導体膜およびそれを用いた半導体素子
DE10127073A1 (de) * 2001-06-02 2002-12-12 Rossendorf Forschzent Verfahren zur Behandlung heteroepitaktischer Halbleiterschichten auf Siliziumsubstraten
US20030066998A1 (en) * 2001-08-02 2003-04-10 Lee Howard Wing Hoon Quantum dots of Group IV semiconductor materials
US6576532B1 (en) 2001-11-30 2003-06-10 Motorola Inc. Semiconductor device and method therefor
US20030111013A1 (en) * 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
US6887773B2 (en) * 2002-06-19 2005-05-03 Luxtera, Inc. Methods of incorporating germanium within CMOS process
US6804440B2 (en) 2002-07-26 2004-10-12 Lnl Technologies, Inc. Integrated mode converter, waveguide, and on-chip function
GB0220438D0 (en) 2002-09-03 2002-10-09 Univ Warwick Formation of lattice-turning semiconductor substrates
EP1554413B1 (de) * 2002-10-25 2013-07-24 TEL Solar AG Verfahren zur Herstellung von Halbleiterbauelementen
JP3851950B2 (ja) * 2002-11-19 2006-11-29 国立大学法人名古屋大学 シリコンゲルマニウム膜の作製方法、エピタキシャル成長用基板、多層膜構造体及びヘテロ接合電界効果トランジスタ
US7453129B2 (en) 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
US20040192067A1 (en) * 2003-02-28 2004-09-30 Bruno Ghyselen Method for forming a relaxed or pseudo-relaxed useful layer on a substrate
US7348260B2 (en) * 2003-02-28 2008-03-25 S.O.I.Tec Silicon On Insulator Technologies Method for forming a relaxed or pseudo-relaxed useful layer on a substrate
US7018909B2 (en) 2003-02-28 2006-03-28 S.O.I.Tec Silicon On Insulator Technologies S.A. Forming structures that include a relaxed or pseudo-relaxed layer on a substrate
US7682947B2 (en) * 2003-03-13 2010-03-23 Asm America, Inc. Epitaxial semiconductor deposition methods and structures
WO2005020334A2 (en) * 2003-08-22 2005-03-03 Massachusetts Institute Of Technology High efficiency tandem solar cells on silicon substrates using ultra thin germanium buffer layers
US7138697B2 (en) * 2004-02-24 2006-11-21 International Business Machines Corporation Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector
EP1763893A2 (de) * 2004-02-27 2007-03-21 ASM America, Inc. Abscheidung von germanium
US7282449B2 (en) * 2004-03-05 2007-10-16 S.O.I.Tec Silicon On Insulator Technologies Thermal treatment of a semiconductor layer
FR2867310B1 (fr) * 2004-03-05 2006-05-26 Soitec Silicon On Insulator Technique d'amelioration de la qualite d'une couche mince prelevee
FR2867307B1 (fr) * 2004-03-05 2006-05-26 Soitec Silicon On Insulator Traitement thermique apres detachement smart-cut
US20060014363A1 (en) * 2004-03-05 2006-01-19 Nicolas Daval Thermal treatment of a semiconductor layer
US7498243B2 (en) * 2004-03-17 2009-03-03 The Board Of Trustees Of The Leland Stanford Junior University Crystalline-type device and approach therefor
US7749872B2 (en) * 2004-03-17 2010-07-06 The Board Of Trustees Of The Leland Stanford Junior University Crystalline-type device and approach therefor
FR2868202B1 (fr) 2004-03-25 2006-05-26 Commissariat Energie Atomique Procede de preparation d'une couche de dioxyde de silicium par oxydation a haute temperature sur un substrat presentant au moins en surface du germanium ou un alliage sicicium- germanium.
ES2363089T3 (es) * 2004-04-30 2011-07-20 Dichroic Cell S.R.L. Método para producir sustratos de ge virtuales para la integración iii/v sobre si (001).
US7135391B2 (en) * 2004-05-21 2006-11-14 International Business Machines Corporation Polycrystalline SiGe junctions for advanced devices
US7217578B1 (en) * 2004-08-02 2007-05-15 Advanced Micro Devices, Inc. Advanced process control of thermal oxidation processes, and systems for accomplishing same
EP1655767B1 (de) 2004-10-13 2017-03-22 Imec Verfahren zur Herstellung eines passivierten Halbleitersubstrats
US7247545B2 (en) * 2004-11-10 2007-07-24 Sharp Laboratories Of America, Inc. Fabrication of a low defect germanium film by direct wafer bonding
FR2880988B1 (fr) * 2005-01-19 2007-03-30 Soitec Silicon On Insulator TRAITEMENT D'UNE COUCHE EN SI1-yGEy PRELEVEE
US20080121932A1 (en) * 2006-09-18 2008-05-29 Pushkar Ranade Active regions with compatible dielectric layers
US7220632B2 (en) * 2005-02-24 2007-05-22 Freescale Semiconductor, Inc. Method of forming a semiconductor device and an optical device and structure thereof
US7008813B1 (en) * 2005-02-28 2006-03-07 Sharp Laboratories Of America, Inc.. Epitaxial growth of germanium photodetector for CMOS imagers
KR100610465B1 (ko) * 2005-03-25 2006-08-08 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
FR2886457B1 (fr) * 2005-05-27 2007-12-07 Soitec Silicon On Insulator Procede de fabrication d'une structure a couche d'oxyde d'epaisseur desiree,notammentt sur substrat de ge ou sige
US7413939B2 (en) * 2005-06-10 2008-08-19 Sharp Laboratories Of America, Inc. Method of growing a germanium epitaxial film on insulator for use in fabrication of CMOS integrated circuit
US7037856B1 (en) 2005-06-10 2006-05-02 Sharp Laboratories Of America, Inc. Method of fabricating a low-defect strained epitaxial germanium film on silicon
US7626246B2 (en) 2005-07-26 2009-12-01 Amberwave Systems Corporation Solutions for integrated circuit integration of alternative active area materials
US7495254B2 (en) 2005-08-30 2009-02-24 International Business Machines Corporation Test structure and method for detecting and studying crystal lattice dislocation defects in integrated circuit devices
US20070054467A1 (en) * 2005-09-07 2007-03-08 Amberwave Systems Corporation Methods for integrating lattice-mismatched semiconductor structure on insulators
US7638842B2 (en) * 2005-09-07 2009-12-29 Amberwave Systems Corporation Lattice-mismatched semiconductor structures on insulators
US7266263B2 (en) * 2005-11-08 2007-09-04 Massachusetts Institute Of Technology Integrated waveguide photodetector apparatus with matching propagation constants and related coupling methods
US20070104441A1 (en) * 2005-11-08 2007-05-10 Massachusetts Institute Of Technology Laterally-integrated waveguide photodetector apparatus and related coupling methods
US7305157B2 (en) * 2005-11-08 2007-12-04 Massachusetts Institute Of Technology Vertically-integrated waveguide photodetector apparatus and related coupling methods
WO2007112066A2 (en) 2006-03-24 2007-10-04 Amberwave Systems Corporation Lattice-mismatched semiconductor structures and related methods for device fabrication
US20070235345A1 (en) * 2006-04-07 2007-10-11 Applied Materials, Inc. Polishing method that suppresses hillock formation
EP2062290B1 (de) 2006-09-07 2019-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Defektreduzierung durch kontrolle des aspektverhältnisses
US20080070355A1 (en) * 2006-09-18 2008-03-20 Amberwave Systems Corporation Aspect ratio trapping for mixed signal applications
WO2008039534A2 (en) 2006-09-27 2008-04-03 Amberwave Systems Corporation Quantum tunneling devices and circuits with lattice- mismatched semiconductor structures
WO2008039495A1 (en) 2006-09-27 2008-04-03 Amberwave Systems Corporation Tri-gate field-effect transistors formed by aspect ratio trapping
WO2008051503A2 (en) 2006-10-19 2008-05-02 Amberwave Systems Corporation Light-emitter-based devices with lattice-mismatched semiconductor structures
US7651880B2 (en) * 2006-11-04 2010-01-26 Sharp Laboratories Of America, Inc. Ge short wavelength infrared imager
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US7825328B2 (en) * 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
CN101836295A (zh) * 2007-08-08 2010-09-15 新加坡科技研究局 半导体装置及其制备方法
JP2010538495A (ja) 2007-09-07 2010-12-09 アンバーウェーブ・システムズ・コーポレーション 多接合太陽電池
US7851378B2 (en) * 2007-09-11 2010-12-14 National Applied Research Laboratories Method for growing Ge expitaxial layer on patterned structure with cyclic annealing
US8257997B2 (en) * 2007-10-17 2012-09-04 Sifotonics Technologies (Usa) Inc. Semiconductor photodetectors
US7723206B2 (en) 2007-12-05 2010-05-25 Fujifilm Corporation Photodiode
US20090184382A1 (en) * 2008-01-23 2009-07-23 Katherine Hartman Method to reduce dislocation density in silicon
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US7732886B2 (en) * 2008-07-15 2010-06-08 United Microelectronics Corp. Pin photodiode structure
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
US8034697B2 (en) 2008-09-19 2011-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Formation of devices by epitaxial layer overgrowth
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
US8138066B2 (en) 2008-10-01 2012-03-20 International Business Machines Corporation Dislocation engineering using a scanned laser
DE102009001379B4 (de) * 2009-03-06 2015-08-06 Pacific Speed Ltd. Halbleiterverbund-Epitaxialwafer und dessen Herstellungsverfahren
CN102379046B (zh) 2009-04-02 2015-06-17 台湾积体电路制造股份有限公司 从晶体材料的非极性平面形成的器件及其制作方法
US8623728B2 (en) * 2009-07-28 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming high germanium concentration SiGe stressor
SG169922A1 (en) * 2009-09-24 2011-04-29 Taiwan Semiconductor Mfg Improved semiconductor sensor structures with reduced dislocation defect densities and related methods for the same
US8389999B2 (en) * 2009-09-28 2013-03-05 Massachusetts Institute Of Technology Method to reduce dislocation density in silicon using stress
TWI562195B (en) 2010-04-27 2016-12-11 Pilegrowth Tech S R L Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication
US9127345B2 (en) 2012-03-06 2015-09-08 Asm America, Inc. Methods for depositing an epitaxial silicon germanium layer having a germanium to silicon ratio greater than 1:1 using silylgermane and a diluent
KR101240537B1 (ko) * 2012-05-07 2013-03-11 (주)실리콘화일 이종접합 구조의 칩 적층 이미지센서 및 그 제조방법
US9171715B2 (en) 2012-09-05 2015-10-27 Asm Ip Holding B.V. Atomic layer deposition of GeO2
DE102013201644A1 (de) 2012-09-19 2014-03-20 Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik Germanium PIN-Fotodiode für die Integration in eine CMOS- oder BiCMOS-Technologie
KR101419533B1 (ko) * 2012-12-31 2014-07-14 성균관대학교산학협력단 저마늄을 이용한 반도체 소자의 접합 영역에서의 결함 치유 방법
US9218963B2 (en) 2013-12-19 2015-12-22 Asm Ip Holding B.V. Cyclical deposition of germanium
WO2016100373A1 (en) * 2014-12-15 2016-06-23 Stratio, Inc. Reduction of surface roughness in epitaxially grown germanium by controlled thermal oxidation
US9864138B2 (en) 2015-01-05 2018-01-09 The Research Foundation For The State University Of New York Integrated photonics including germanium
TWI646581B (zh) 2015-02-09 2019-01-01 聯華電子股份有限公司 製作鍺磊晶層之方法以及應用其之製作元件之方法
FI127415B (en) 2015-04-16 2018-05-31 Turun Yliopisto Preparation of foreign oxide in a semiconductor
TW201718930A (zh) 2015-09-04 2017-06-01 南洋理工大學 具有經減低之線差排密度的基材之製造方法
US10435814B2 (en) 2015-10-30 2019-10-08 The Board Of Trustees Of The Leland Stanford Junior University Single metal crystals
US10976491B2 (en) 2016-11-23 2021-04-13 The Research Foundation For The State University Of New York Photonics interposer optoelectronics
FR3064398B1 (fr) * 2017-03-21 2019-06-07 Soitec Structure de type semi-conducteur sur isolant, notamment pour un capteur d'image de type face avant, et procede de fabrication d'une telle structure
US10698156B2 (en) 2017-04-27 2020-06-30 The Research Foundation For The State University Of New York Wafer scale bonded active photonics interposer
EP3776074B1 (de) 2018-04-04 2023-11-22 The Research Foundation for the State University of New York Heterogene struktur auf einer integrierten photonikplattform
US10816724B2 (en) 2018-04-05 2020-10-27 The Research Foundation For The State University Of New York Fabricating photonics structure light signal transmission regions
TWI851601B (zh) 2018-11-21 2024-08-11 紐約州立大學研究基金會 光子光電系統及其製造方法
US11029466B2 (en) 2018-11-21 2021-06-08 The Research Foundation For The State University Of New York Photonics structure with integrated laser
US11550099B2 (en) 2018-11-21 2023-01-10 The Research Foundation For The State University Of New York Photonics optoelectrical system
US11791159B2 (en) * 2019-01-17 2023-10-17 Ramesh kumar Harjivan Kakkad Method of fabricating thin, crystalline silicon film and thin film transistors
JP2022536793A (ja) 2019-06-18 2022-08-18 ザ・リサーチ・ファウンデーション・フォー・ザ・ステイト・ユニヴァーシティ・オブ・ニューヨーク フォトニクス構造導電経路の作製

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2131407B (en) 1982-11-12 1987-02-04 Rca Corp Method of formation of silicon dioxide layer
US4632712A (en) 1983-09-12 1986-12-30 Massachusetts Institute Of Technology Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth
US5091333A (en) * 1983-09-12 1992-02-25 Massachusetts Institute Of Technology Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth
US4604304A (en) 1985-07-03 1986-08-05 Rca Corporation Process of producing thick layers of silicon dioxide
US4814291A (en) 1986-02-25 1989-03-21 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making devices having thin dielectric layers
US4876210A (en) 1987-04-30 1989-10-24 The University Of Delaware Solution growth of lattice mismatched and solubility mismatched heterostructures
JPH01220834A (ja) * 1988-02-29 1989-09-04 Nippon Telegr & Teleph Corp <Ntt> 薄膜形成方法
US4987095A (en) 1988-06-15 1991-01-22 International Business Machines Corp. Method of making unpinned oxide-compound semiconductor structures
US5019882A (en) 1989-05-15 1991-05-28 International Business Machines Corporation Germanium channel silicon MOSFET
US5210052A (en) 1989-05-18 1993-05-11 Fujitsu Limited Method for fabricating a semiconductor substrate
US5089428A (en) * 1989-12-27 1992-02-18 Texas Instruments Incorporated Method for forming a germanium layer and a heterojunction bipolar transistor
US5168330A (en) 1990-12-03 1992-12-01 Research Triangle Institute Semiconductor device having a semiconductor substrate interfaced to a dissimilar material by means of a single crystal pseudomorphic interlayer
US5091767A (en) 1991-03-18 1992-02-25 At&T Bell Laboratories Article comprising a lattice-mismatched semiconductor heterostructure
US5268324A (en) 1992-05-27 1993-12-07 International Business Machines Corporation Modified silicon CMOS process having selectively deposited Si/SiGe FETS
US5466949A (en) * 1994-08-04 1995-11-14 Texas Instruments Incorporated Silicon oxide germanium resonant tunneling
JP3441277B2 (ja) * 1995-12-26 2003-08-25 株式会社東芝 半導体装置およびその製造方法
US6130144A (en) * 1997-01-02 2000-10-10 Texas Instruments Incorporated Method for making very shallow junctions in silicon devices
AU9674498A (en) 1997-10-10 1999-05-03 Cornell Research Foundation Inc. Methods for growing defect-free heteroepitaxial layers

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US6635110B1 (en) 2003-10-21
DE60039875D1 (de) 2008-09-25
EP1192646B1 (de) 2008-08-13
EP1192647B1 (de) 2010-10-20
EP1192646A1 (de) 2002-04-03
TW449834B (en) 2001-08-11
WO2001001466A1 (en) 2001-01-04
EP1192647A1 (de) 2002-04-03
TW484234B (en) 2002-04-21
WO2001001465A1 (en) 2001-01-04

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