GB2131407B - Method of formation of silicon dioxide layer - Google Patents

Method of formation of silicon dioxide layer

Info

Publication number: GB2131407B
Authority: GB; United Kingdom
Prior art keywords: formation; silicon dioxide; dioxide layer; layer; silicon
Prior art date: 1982-11-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

GB08329380A

Other versions

GB2131407A (en

GB8329380D0 (en

Inventor

Lorenzo Faraone

Robert Daniel Vibronek

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

RCA Corp

Original Assignee

RCA Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1982-11-12

Filing date

1983-11-03

Publication date

1987-02-04

1983-11-03 Application filed by RCA Corp filed Critical RCA Corp

1983-12-07 Publication of GB8329380D0 publication Critical patent/GB8329380D0/en

1984-06-20 Publication of GB2131407A publication Critical patent/GB2131407A/en

1987-02-04 Application granted granted Critical

1987-02-04 Publication of GB2131407B publication Critical patent/GB2131407B/en

Status Expired legal-status Critical Current

Classifications

- H10P14/6308—

GB08329380A 1982-11-12 1983-11-03 Method of formation of silicon dioxide layer Expired GB2131407B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US44137282A	1982-11-12	1982-11-12

Publications (3)

Publication Number	Publication Date
GB8329380D0 GB8329380D0 (en)	1983-12-07
GB2131407A GB2131407A (en)	1984-06-20
GB2131407B true GB2131407B (en)	1987-02-04

Family

ID=23752622

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB08329380A Expired GB2131407B (en)	1982-11-12	1983-11-03	Method of formation of silicon dioxide layer

Country Status (6)

Country	Link
JP (1)	JPH06101466B2 (en)
DE (1)	DE3340583A1 (en)
FR (1)	FR2536208B1 (en)
GB (1)	GB2131407B (en)
IT (1)	IT1171798B (en)
SE (1)	SE500975C2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4814291A (en) *	1986-02-25	1989-03-21	American Telephone And Telegraph Company, At&T Bell Laboratories	Method of making devices having thin dielectric layers
US4874716A (en) *	1986-04-01	1989-10-17	Texas Instrument Incorporated	Process for fabricating integrated circuit structure with extremely smooth polysilicone dielectric interface
EP0281233A1 (en) *	1987-01-30	1988-09-07	AT&T Corp.	Improved formation of dielectric on deposited silicon
US5851871A (en) *	1987-12-23	1998-12-22	Sgs-Thomson Microelectronics, S.R.L.	Process for manufacturing integrated capacitors in MOS technology
EP0608503B1 (en) *	1989-02-14	1997-05-28	Seiko Epson Corporation	A semiconductor device and its manufacturing method
EP0545585A3 (en) *	1991-12-03	1996-11-06	American Telephone & Telegraph	Integrated circuit fabrication comprising a locos process
US5712177A (en) *	1994-08-01	1998-01-27	Motorola, Inc.	Method for forming a reverse dielectric stack
US5665620A (en) *	1994-08-01	1997-09-09	Motorola, Inc.	Method for forming concurrent top oxides using reoxidized silicon in an EPROM
EP1192646B1 (en)	1999-06-25	2008-08-13	Massachusetts Institute Of Technology	Cyclic thermal anneal for dislocation reduction
CN112992672B (en) *	2019-12-16	2022-10-14	山东有研半导体材料有限公司	Preparation method of silicon-based silicon dioxide back sealing film

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3900345A (en) *	1973-08-02	1975-08-19	Motorola Inc	Thin low temperature epi regions by conversion of an amorphous layer
JPS5910060B2 (en) *	1976-03-01	1984-03-06	株式会社日立製作所	Manufacturing method of semiconductor device
IT1089298B (en) *	1977-01-17	1985-06-18	Mostek Corp	PROCEDURE FOR MANUFACTURING A SEMICONDUCTIVE DEVICE
US4166919A (en) *	1978-09-25	1979-09-04	Rca Corporation	Amorphous silicon solar cell allowing infrared transmission
JPS55115341A (en) *	1979-02-28	1980-09-05	Chiyou Lsi Gijutsu Kenkyu Kumiai	Manufacture of semiconductor device
JPS5676537A (en) *	1979-11-27	1981-06-24	Fujitsu Ltd	Manufacture of semiconductor device
US4479831A (en) *	1980-09-15	1984-10-30	Burroughs Corporation	Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment
US4358326A (en) *	1980-11-03	1982-11-09	International Business Machines Corporation	Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing
US4441249A (en) *	1982-05-26	1984-04-10	Bell Telephone Laboratories, Incorporated	Semiconductor integrated circuit capacitor

1983
- 1983-11-03 GB GB08329380A patent/GB2131407B/en not_active Expired
- 1983-11-04 SE SE8306071A patent/SE500975C2/en unknown
- 1983-11-10 DE DE19833340583 patent/DE3340583A1/en active Granted
- 1983-11-10 FR FR8317930A patent/FR2536208B1/en not_active Expired
- 1983-11-11 IT IT23691/83A patent/IT1171798B/en active
- 1983-11-11 JP JP58213177A patent/JPH06101466B2/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
JPH06101466B2 (en)	1994-12-12
SE500975C2 (en)	1994-10-10
SE8306071D0 (en)	1983-11-04
DE3340583A1 (en)	1984-05-17
SE8306071L (en)	1984-05-13
JPS59103347A (en)	1984-06-14
DE3340583C2 (en)	1993-04-29
FR2536208A1 (en)	1984-05-18
GB2131407A (en)	1984-06-20
IT8323691A0 (en)	1983-11-11
GB8329380D0 (en)	1983-12-07
FR2536208B1 (en)	1987-03-20
IT1171798B (en)	1987-06-10

Similar Documents

Publication	Publication Date	Title
JPS5627937A (en)	1981-03-18	Method of forming silicon dioxide layer
JPS5796518A (en)	1982-06-15	Method of forming polycrystalline silicon layer
GB2144733B (en)	1987-02-25	Methods of making silicon dioxide coatings
DE3473531D1 (en)	1988-09-22	Method of forming semiconductor devices
EG16216A (en)	1987-10-30	Method for production of puire silicon
DE3380615D1 (en)	1989-10-26	Method of producing semiconductor device
JPS57113267A (en)	1982-07-14	Method of producing semiconductor device
JPS5749235A (en)	1982-03-23	Method of producing semiconductor device
JPS5734367A (en)	1982-02-24	Method of producing semiconductor device
JPS57115871A (en)	1982-07-19	Method of producing semiconductor device
JPS57133678A (en)	1982-08-18	Method of producing semiconductor device
JPS56131965A (en)	1981-10-15	Method of producing semiconductor device
GB2120011B (en)	1985-12-18	Method of fabricating dielectrically isolated semiconductor regions
JPS5731180A (en)	1982-02-19	Method of producing semiconductor device
GB8415146D0 (en)	1984-07-18	Formation of layer of multiconstituent
JPS5627938A (en)	1981-03-18	Method of forming silicon dioxide layer
JPS5759323A (en)	1982-04-09	Method of producing semiconductor device
JPS57141925A (en)	1982-09-02	Method of producing semiconductor device
DE3166037D1 (en)	1984-10-18	Method for manufacture of silicon nitride
GB2131407B (en)	1987-02-04	Method of formation of silicon dioxide layer
EP0107363A3 (en)	1986-10-15	Method of producing anisotropically-conducting layers
JPS5752136A (en)	1982-03-27	Method of producing semiconductor device
JPS57126146A (en)	1982-08-05	Method of producing semiconductor device
ZA844870B (en)	1985-02-27	Method of making silicon nitride comprising objects
JPS5791559A (en)	1982-06-07	Method of producing semiconductor device

Legal Events

Date	Code	Title	Description
2003-11-26	PE20	Patent expired after termination of 20 years	Effective date: 20031102