[go: up one dir, main page]

DE60044493D1 - Fluorierte photoresists und verfahren für die mikrolithographie - Google Patents

Fluorierte photoresists und verfahren für die mikrolithographie

Info

Publication number
DE60044493D1
DE60044493D1 DE60044493T DE60044493T DE60044493D1 DE 60044493 D1 DE60044493 D1 DE 60044493D1 DE 60044493 T DE60044493 T DE 60044493T DE 60044493 T DE60044493 T DE 60044493T DE 60044493 D1 DE60044493 D1 DE 60044493D1
Authority
DE
Germany
Prior art keywords
phototests
microlithography
fluorinated
methods
fluorinated phototests
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60044493T
Other languages
English (en)
Inventor
Andrew Edward Feiring
Jerald Feldman
Frank Leonard Schadt Iii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Application granted granted Critical
Publication of DE60044493D1 publication Critical patent/DE60044493D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18Monomers containing fluorine
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18Monomers containing fluorine
    • C08F214/186Monomers containing fluorine with non-fluorinated comonomers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE60044493T 1999-05-04 2000-04-28 Fluorierte photoresists und verfahren für die mikrolithographie Expired - Lifetime DE60044493D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13237399P 1999-05-04 1999-05-04
PCT/US2000/011539 WO2000067072A1 (en) 1999-05-04 2000-04-28 Fluorinated polymers, photoresists and processes for microlithography

Publications (1)

Publication Number Publication Date
DE60044493D1 true DE60044493D1 (de) 2010-07-15

Family

ID=22453723

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60044493T Expired - Lifetime DE60044493D1 (de) 1999-05-04 2000-04-28 Fluorierte photoresists und verfahren für die mikrolithographie

Country Status (10)

Country Link
EP (1) EP1183571B1 (de)
JP (1) JP4402304B2 (de)
KR (1) KR20020012206A (de)
CN (1) CN1227569C (de)
AU (1) AU4678100A (de)
DE (1) DE60044493D1 (de)
HK (1) HK1047797B (de)
IL (1) IL145653A0 (de)
TW (1) TWI227373B (de)
WO (1) WO2000067072A1 (de)

Families Citing this family (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US6593058B1 (en) 1998-09-23 2003-07-15 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
EP1177184B1 (de) 1999-05-04 2004-08-25 E.I. Du Pont De Nemours And Company Polyfluorierte epoxide und assozierte polymere und verfahren
US6468712B1 (en) 2000-02-25 2002-10-22 Massachusetts Institute Of Technology Resist materials for 157-nm lithography
EP1275666A4 (de) * 2000-04-04 2007-10-24 Daikin Ind Ltd Neues fluorpolymer mit säureaktiver gruppe und chemisch verstärkte photoresistzusammensetzungen die dieses enthalten
SG100729A1 (en) * 2000-06-16 2003-12-26 Jsr Corp Radiation-sensitive resin composition
AU2001274579A1 (en) 2000-06-21 2002-01-02 Asahi Glass Company, Limited Resist composition
JP4190167B2 (ja) 2000-09-26 2008-12-03 富士フイルム株式会社 ポジ型レジスト組成物
AU2001296737A1 (en) 2000-10-12 2002-04-22 North Carolina State University Co2-processes photoresists, polymers, and photoactive compounds for microlithography
WO2002039186A2 (en) * 2000-11-09 2002-05-16 E. I. Du Pont De Nemours And Company Photoacid generators in photoresist compositions for microlithography
WO2002044811A2 (en) * 2000-11-29 2002-06-06 E. I. Du Pont De Nemours And Company Polymers blends and their use in photoresist compositions for microlithography
JP2004534961A (ja) * 2000-11-29 2004-11-18 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー フォトレジスト組成物を含有する多層エレメントおよびマイクロリソグラフィでのそれらの使用
US6469220B2 (en) * 2000-12-25 2002-10-22 Shin-Etsu Chemical Co., Ltd. Tertiary alcohol compounds having an alicyclic structure
WO2002065212A1 (en) 2001-02-09 2002-08-22 Asahi Glass Company, Limited Resist composition
WO2002066526A1 (en) * 2001-02-23 2002-08-29 Daikin Industries, Ltd. Ethylenic fluoromonomer containing hydroxyl or fluoroalkylcarbonyl group and fluoropolymer obtained by polymerizing the same
US6794109B2 (en) * 2001-02-23 2004-09-21 Massachusetts Institute Of Technology Low abosorbing resists for 157 nm lithography
US6787286B2 (en) 2001-03-08 2004-09-07 Shipley Company, L.L.C. Solvents and photoresist compositions for short wavelength imaging
TWI226973B (en) 2001-03-19 2005-01-21 Fuji Photo Film Co Ltd Positive resist composition
AU2002257066A1 (en) * 2001-03-22 2002-10-28 Shipley Company, L.L.C. Photoresist compositions comprising solvents for short wavelength imaging
US6858379B2 (en) 2001-03-22 2005-02-22 Shipley Company, L.L.C. Photoresist compositions for short wavelength imaging
WO2002077712A2 (en) * 2001-03-22 2002-10-03 Shipley Company, L.L.C. Photoresist composition
US6875819B2 (en) 2001-04-27 2005-04-05 Mitsui Chemicals, Inc. Fluorinated cycloolefin polymers, processes for preparation of fluorinated cycloofefin monomers and polymers thereof, and use of the same
US6936398B2 (en) 2001-05-09 2005-08-30 Massachusetts Institute Of Technology Resist with reduced line edge roughness
US6686429B2 (en) 2001-05-11 2004-02-03 Clariant Finance (Bvi) Limited Polymer suitable for photoresist compositions
US6737215B2 (en) 2001-05-11 2004-05-18 Clariant Finance (Bvi) Ltd Photoresist composition for deep ultraviolet lithography
US6958123B2 (en) 2001-06-15 2005-10-25 Reflectivity, Inc Method for removing a sacrificial material with a compressed fluid
DE10131144B4 (de) * 2001-06-28 2006-01-19 Infineon Technologies Ag Verstärkung von Resiststrukturen aus fluorierten Resistpolymeren durch strukturelles Aufwachsen der Strukturen mittels gezieltem chemischem Anbinden von fluorierten Oligomeren
US20040234899A1 (en) * 2001-07-12 2004-11-25 Minoru Toriumi Method of forming fine pattern
KR100493015B1 (ko) * 2001-08-25 2005-06-07 삼성전자주식회사 감광성 폴리머 및 이를 포함하는 포토레지스트 조성물
JP4856826B2 (ja) * 2001-08-30 2012-01-18 株式会社ダイセル ビニルエーテル化合物の製造法
WO2003036390A1 (fr) * 2001-10-03 2003-05-01 Semiconductor Leading Edge Technologies, Inc. Procede de formation d'un motif fin
KR20050039699A (ko) 2001-10-26 2005-04-29 이 아이 듀폰 디 네모아 앤드 캄파니 에스테르기를 갖는 플루오르화 중합체 및마이크로리소그래피용 포토레지스트
US6723488B2 (en) 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
JP2003186197A (ja) * 2001-12-19 2003-07-03 Sony Corp レジスト材料及び露光方法
JP2003186198A (ja) * 2001-12-19 2003-07-03 Sony Corp レジスト材料及び露光方法
US6800416B2 (en) * 2002-01-09 2004-10-05 Clariant Finance (Bvi) Ltd. Negative deep ultraviolet photoresist
JP3841400B2 (ja) 2002-02-26 2006-11-01 富士写真フイルム株式会社 ポジ型レジスト組成物
US7019092B2 (en) 2002-03-01 2006-03-28 E. I. Du Pont De Nemours And Company Fluorinated copolymers for microlithography
TW200401164A (en) 2002-03-01 2004-01-16 Shipley Co Llc Photoresist compositions
TW200403522A (en) * 2002-03-01 2004-03-01 Shipley Co Llc Photoresist compositions
EP1481282A4 (de) * 2002-03-04 2009-10-28 Shipley Co Llc Negativ-photoresist für die kurzwellenlängenabbildung
JP4010160B2 (ja) 2002-03-04 2007-11-21 旭硝子株式会社 レジスト組成物
GB0207134D0 (en) * 2002-03-27 2002-05-08 Cambridge Display Tech Ltd Method of preparation of organic optoelectronic and electronic devices and devices thereby obtained
TWI307819B (en) 2002-05-28 2009-03-21 Arch Spec Chem Inc Acetal protected polymers and photoresist compositions thereof
US6806026B2 (en) 2002-05-31 2004-10-19 International Business Machines Corporation Photoresist composition
KR100955454B1 (ko) * 2002-05-31 2010-04-29 후지필름 가부시키가이샤 포지티브 레지스트 조성물
US20030235775A1 (en) 2002-06-13 2003-12-25 Munirathna Padmanaban Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
AU2003254112A1 (en) * 2002-07-26 2004-02-16 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
CN1675179A (zh) * 2002-08-09 2005-09-28 E.I.内穆尔杜邦公司 用作光致抗蚀剂的具有稠合的4-元杂环的多环基团的氟化单体,氟化聚合物和用于微石印术的方法
JP4578971B2 (ja) * 2002-08-19 2010-11-10 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー フォトレジストとして有用なフッ素化ポリマーおよび微細平版印刷のための方法
US7022457B2 (en) * 2002-10-03 2006-04-04 E. I. Du Pont De Nemours And Company Photoresists with hydroxylated, photoacid-cleavable groups
WO2004041760A2 (en) * 2002-11-05 2004-05-21 Honeywell International Inc. Fluorinated polymers
JPWO2004041877A1 (ja) 2002-11-07 2006-03-09 旭硝子株式会社 含フッ素ポリマー
US7264913B2 (en) 2002-11-21 2007-09-04 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
JP2006335774A (ja) * 2003-01-15 2006-12-14 Daikin Ind Ltd レジスト用含フッ素重合体の製造方法
US6919160B2 (en) 2003-02-20 2005-07-19 Air Products And Chemicals, Inc. Acrylic compounds for sub-200 nm photoresist compositions and methods for making and using same
EP1597627A4 (de) * 2003-02-20 2008-01-09 Promerus Llc Auflösungsgeschwindigkeitsmodifikatoren für photoresistzusammensetzungen
US20040166434A1 (en) 2003-02-21 2004-08-26 Dammel Ralph R. Photoresist composition for deep ultraviolet lithography
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
JP4166598B2 (ja) * 2003-03-12 2008-10-15 富士フイルム株式会社 ポジ型レジスト組成物
JP2005099646A (ja) * 2003-03-28 2005-04-14 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用レジスト組成物および該レジスト組成物を用いたレジストパターン形成方法
US7700257B2 (en) 2003-03-28 2010-04-20 Tokyo Ohka Kogyo Co., Ltd. Photoresist composition and resist pattern formation method by the use thereof
US7150957B2 (en) * 2003-04-25 2006-12-19 International Business Machines Corporation Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions
JP4386710B2 (ja) 2003-04-28 2009-12-16 東京応化工業株式会社 ホトレジスト組成物、該ホトレジスト組成物用低分子化合物および高分子化合物
US7138550B2 (en) * 2003-08-04 2006-11-21 Air Products And Chemicals, Inc. Bridged carbocyclic compounds and methods of making and using same
JP2005055697A (ja) 2003-08-05 2005-03-03 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4383810B2 (ja) * 2003-09-10 2009-12-16 信越化学工業株式会社 含フッ素重合性環状オレフィン化合物
US7408013B2 (en) 2003-09-23 2008-08-05 Commonwealth Scientific And Industrial Research Organization Low-polydispersity photoimageable polymers and photoresists and processes for microlithography
US7473512B2 (en) 2004-03-09 2009-01-06 Az Electronic Materials Usa Corp. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
US7081511B2 (en) 2004-04-05 2006-07-25 Az Electronic Materials Usa Corp. Process for making polyesters
WO2005118656A2 (en) 2004-05-20 2005-12-15 E.I. Dupont De Nemours And Company Photoresists comprising polymers derived from fluoroalcohol-substituted polycyclic monomers
JP4551701B2 (ja) * 2004-06-14 2010-09-29 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
US7691556B2 (en) 2004-09-15 2010-04-06 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
US7595141B2 (en) 2004-10-26 2009-09-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
WO2006051769A1 (ja) * 2004-11-15 2006-05-18 Tokyo Ohka Kogyo Co., Ltd. レジストパターンの形成方法
US7358035B2 (en) * 2005-06-23 2008-04-15 International Business Machines Corporation Topcoat compositions and methods of use thereof
US7553905B2 (en) 2005-10-31 2009-06-30 Az Electronic Materials Usa Corp. Anti-reflective coatings
JP2007131704A (ja) 2005-11-09 2007-05-31 Fujifilm Corp 環状オレフィン系重合体、およびそれを用いた光学材料、偏光板および液晶表示装置
US20070191560A1 (en) * 2006-02-13 2007-08-16 Kipp Brian E Norbornenylmethyl fluoroalkyl ethers
JP5430821B2 (ja) 2006-09-19 2014-03-05 東京応化工業株式会社 レジストパターン形成方法
US7923200B2 (en) 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
CN101543135B (zh) 2007-05-31 2011-04-13 松下电器产业株式会社 有机电致发光元件和其制造方法
US7745077B2 (en) 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
EP2391187B1 (de) 2009-06-04 2013-04-24 Panasonic Corporation Organische el-anzeigetafel und verfahren zu ihrer herstellung
US8729534B2 (en) 2009-06-29 2014-05-20 Panasonic Corporation Organic EL display panel
EP2640163A4 (de) 2010-12-20 2013-10-09 Panasonic Corp Organische el-anzeigetafel und verfahren zu ihrer herstellung
US9746776B2 (en) * 2014-11-25 2017-08-29 E I Du Pont De Nemours And Company Low surface energy photoresist composition and process
CN111155349A (zh) * 2020-01-09 2020-05-15 浙江理工大学 一种负性光刻胶用纤维素基成膜树脂的制备方法
WO2024223739A1 (en) 2023-04-27 2024-10-31 Merck Patent Gmbh Photoactive compounds

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4207261C2 (de) * 1992-03-07 2000-03-16 Clariant Gmbh Styrol-Monomere mit 2,2-Bis-trifluormethyl-oxaethano-Brückengliedern, Polymere und deren Verwendung
DE4207264B4 (de) * 1992-03-07 2005-07-28 Clariant Gmbh Negativ arbeitendes strahlungsempfindliches Gemisch und damit hergestelltes Aufzeichnungsmaterial
JP3804138B2 (ja) * 1996-02-09 2006-08-02 Jsr株式会社 ArFエキシマレーザー照射用感放射線性樹脂組成物
US6593058B1 (en) * 1998-09-23 2003-07-15 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography

Also Published As

Publication number Publication date
EP1183571A1 (de) 2002-03-06
CN1227569C (zh) 2005-11-16
HK1047797A1 (en) 2003-03-07
JP4402304B2 (ja) 2010-01-20
HK1047797B (zh) 2006-07-28
TWI227373B (en) 2005-02-01
EP1183571B1 (de) 2010-06-02
CN1357116A (zh) 2002-07-03
JP2002543469A (ja) 2002-12-17
KR20020012206A (ko) 2002-02-15
WO2000067072A1 (en) 2000-11-09
AU4678100A (en) 2000-11-17
IL145653A0 (en) 2002-06-30

Similar Documents

Publication Publication Date Title
DE60044493D1 (de) Fluorierte photoresists und verfahren für die mikrolithographie
DE69940275D1 (de) Fotoresiste und verfahren für die microlithographie
DE69926532D1 (de) Photoresists, polymere und verfahren für die mikrolithographie
DE60223630D1 (de) Lithographisches Gerät und zugehöriges Herstellungsverfahren
DE60113215D1 (de) Halbleitervorrichtung und Verfahren zu dessen Herstellung
DE60233058D1 (de) Silsesquioxanderivate und verfahren zu ihrer herstellung
DE60133260D1 (de) Verfahren und Gerät für strahlentomographische Bilderzeugung
DE60028245D1 (de) Projektionsobjektiv für mikrolithographische reduzierung
DE60020638D1 (de) Lithographischer Projektionsapparat
DE60118669D1 (de) Lithographischer Projektionsapparat
DE60020620D1 (de) Lithographischer Projektionsapparat
DE60026461D1 (de) Lithographischer Projektionsapparat
DE69728634D1 (de) Reinigung- und Entschichtungsverfahren für die Lithographie
DE60126235D1 (de) Belichtungsverfahren und -system
DE60143673D1 (de) Dichtemodulierte dynamische ditherschaltungen und verfahren für einen delta-sigma-umsetzer
DE50214717D1 (de) Und verfahren zu seiner herstellung
DE60134922D1 (de) Lithographischer Apparat
DE60200749D1 (de) Süssungsmittel und Verfahren zu deren Herstellung
DE60331803D1 (de) Verfahren und Vorrichtung für transparente LAN-Dienste
DE60207327D1 (de) Spuleneinheit und Verfahren zu deren Herstellung
DE60131203D1 (de) Lithographischer Apparat
DE69918466D1 (de) Beleuchtungsvorrichtung und verfahren zu ihrer herstellung
DE60036713D1 (de) System und verfahren für gesicherte netzwerkstransaktionen
DE50007947D1 (de) Hohlgegossenes Bauteil und Verfahren zu dessen Herstellung
DE60234678D1 (de) Leiterplatte und verfahren zu ihrer herstellung