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DE60043505D1 - Apparat für die plasma-behandlung - Google Patents

Apparat für die plasma-behandlung

Info

Publication number
DE60043505D1
DE60043505D1 DE60043505T DE60043505T DE60043505D1 DE 60043505 D1 DE60043505 D1 DE 60043505D1 DE 60043505 T DE60043505 T DE 60043505T DE 60043505 T DE60043505 T DE 60043505T DE 60043505 D1 DE60043505 D1 DE 60043505D1
Authority
DE
Germany
Prior art keywords
plasma treatment
plasma
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60043505T
Other languages
English (en)
Inventor
Akira Koshiishi
Keizo Hirose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP12563799A external-priority patent/JP4322350B2/ja
Priority claimed from JP12687899A external-priority patent/JP4454718B2/ja
Priority claimed from JP12969699A external-priority patent/JP4831853B2/ja
Priority claimed from JP14120999A external-priority patent/JP4467667B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE60043505D1 publication Critical patent/DE60043505D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H10P50/242—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3323—Problems associated with coating uniformity

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
DE60043505T 1999-05-06 2000-04-27 Apparat für die plasma-behandlung Expired - Lifetime DE60043505D1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP12563799A JP4322350B2 (ja) 1999-05-06 1999-05-06 プラズマ処理装置
JP12687899A JP4454718B2 (ja) 1999-05-07 1999-05-07 プラズマ処理装置およびそれに用いられる電極
JP12969699A JP4831853B2 (ja) 1999-05-11 1999-05-11 容量結合型平行平板プラズマエッチング装置およびそれを用いたプラズマエッチング方法
JP14120999A JP4467667B2 (ja) 1999-05-21 1999-05-21 プラズマ処理装置

Publications (1)

Publication Number Publication Date
DE60043505D1 true DE60043505D1 (de) 2010-01-21

Family

ID=27471132

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60043505T Expired - Lifetime DE60043505D1 (de) 1999-05-06 2000-04-27 Apparat für die plasma-behandlung

Country Status (6)

Country Link
US (2) US7537672B1 (de)
EP (1) EP1193746B1 (de)
KR (2) KR100748798B1 (de)
DE (1) DE60043505D1 (de)
TW (1) TW462092B (de)
WO (1) WO2000068985A1 (de)

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US6879870B2 (en) * 2002-04-16 2005-04-12 Steven C. Shannon Method and apparatus for routing harmonics in a plasma to ground within a plasma enhanced semiconductor wafer processing chamber
AU2003263746A1 (en) * 2002-07-03 2004-01-23 Tokyo Electron Limited Method and apparatus for non-invasive measurement and analysis of semiconductor process parameters
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JP4388287B2 (ja) 2003-02-12 2009-12-24 東京エレクトロン株式会社 プラズマ処理装置及び高周波電力供給装置
US20110104381A1 (en) * 2004-01-15 2011-05-05 Stefan Laure Plasma Treatment of Large-Scale Components
CN102157372B (zh) * 2004-06-21 2012-05-30 东京毅力科创株式会社 等离子体处理装置和方法
US7951262B2 (en) * 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
CN1984523B (zh) * 2004-06-21 2014-06-11 东京毅力科创株式会社 等离子体处理装置和方法
US7988816B2 (en) 2004-06-21 2011-08-02 Tokyo Electron Limited Plasma processing apparatus and method
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US7740737B2 (en) * 2004-06-21 2010-06-22 Tokyo Electron Limited Plasma processing apparatus and method
JP2006101480A (ja) 2004-07-12 2006-04-13 Applied Materials Inc プラズマチャンバーとともに使用する固定インピーダンス変換回路網用の装置および方法
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JP4704087B2 (ja) * 2005-03-31 2011-06-15 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US7993489B2 (en) 2005-03-31 2011-08-09 Tokyo Electron Limited Capacitive coupling plasma processing apparatus and method for using the same
US7692916B2 (en) 2005-03-31 2010-04-06 Tokyo Electron Limited Capacitive coupling plasma processing apparatus and method
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US20080099437A1 (en) * 2006-10-30 2008-05-01 Richard Lewington Plasma reactor for processing a transparent workpiece with backside process endpoint detection
US9218944B2 (en) * 2006-10-30 2015-12-22 Applied Materials, Inc. Mask etch plasma reactor having an array of optical sensors viewing the workpiece backside and a tunable element controlled in response to the optical sensors
US8002946B2 (en) * 2006-10-30 2011-08-23 Applied Materials, Inc. Mask etch plasma reactor with cathode providing a uniform distribution of etch rate
US7967930B2 (en) * 2006-10-30 2011-06-28 Applied Materials, Inc. Plasma reactor for processing a workpiece and having a tunable cathode
US8017029B2 (en) * 2006-10-30 2011-09-13 Applied Materials, Inc. Plasma mask etch method of controlling a reactor tunable element in accordance with the output of an array of optical sensors viewing the mask backside
US20080099450A1 (en) * 2006-10-30 2008-05-01 Applied Materials, Inc. Mask etch plasma reactor with backside optical sensors and multiple frequency control of etch distribution
US8012366B2 (en) * 2006-10-30 2011-09-06 Applied Materials, Inc. Process for etching a transparent workpiece including backside endpoint detection steps
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KR100938782B1 (ko) 2009-07-06 2010-01-27 주식회사 테스 플라즈마 발생용 전극 및 플라즈마 발생장치
JP5443127B2 (ja) * 2009-10-28 2014-03-19 東京エレクトロン株式会社 プラズマ処理装置
JP5809396B2 (ja) * 2010-06-24 2015-11-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP5650479B2 (ja) * 2010-09-27 2015-01-07 東京エレクトロン株式会社 電極及びプラズマ処理装置
KR101405502B1 (ko) * 2011-08-26 2014-06-27 주식회사 엔씰텍 줄 가열을 이용한 유기막 증착 장치 및 이를 이용한 유기전계발광표시 소자의 제조 장치
JP5534366B2 (ja) * 2012-06-18 2014-06-25 株式会社京三製作所 高周波電力供給装置、及びイグニッション電圧選定方法
KR101682155B1 (ko) 2015-04-20 2016-12-02 주식회사 유진테크 기판 처리 장치
US10203604B2 (en) 2015-11-30 2019-02-12 Applied Materials, Inc. Method and apparatus for post exposure processing of photoresist wafers
KR20170073757A (ko) * 2015-12-18 2017-06-29 삼성전자주식회사 플라즈마 처리 장치용 상부 전극 및 이를 포함하는 플라즈마 처리 장치
US10435789B2 (en) * 2016-12-06 2019-10-08 Asm Ip Holding B.V. Substrate treatment apparatus
TWI693863B (zh) 2017-06-27 2020-05-11 日商佳能安內華股份有限公司 電漿處理裝置
EP3648551B1 (de) * 2017-06-27 2021-08-18 Canon Anelva Corporation Plasmabehandlungsvorrichtung
EP4017223B1 (de) * 2017-06-27 2025-10-15 Canon Anelva Corporation Plasmaverarbeitungsvorrichtung
PL3648550T3 (pl) 2017-06-27 2021-11-22 Canon Anelva Corporation Urządzenie do przetwarzania plazmowego
FI3817517T3 (fi) 2018-06-26 2024-09-03 Canon Anelva Corp Plasmakäsittelylaite, plasmakäsittelymenetelmä, ohjelma ja muistiväline
KR102189323B1 (ko) 2019-07-16 2020-12-11 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102173465B1 (ko) * 2019-10-15 2020-11-03 주성엔지니어링(주) 기판형 태양 전지의 도핑 장치

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Also Published As

Publication number Publication date
KR100748798B1 (ko) 2007-08-13
EP1193746A4 (de) 2007-04-18
WO2000068985A1 (en) 2000-11-16
KR20020027310A (ko) 2002-04-13
KR20050047139A (ko) 2005-05-19
EP1193746A1 (de) 2002-04-03
KR100880767B1 (ko) 2009-02-02
EP1193746B1 (de) 2009-12-09
US8080126B2 (en) 2011-12-20
TW462092B (en) 2001-11-01
US20080308041A1 (en) 2008-12-18
US7537672B1 (en) 2009-05-26

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