DE60022221D1 - Apparat für die bearbeitung von halbleitern - Google Patents

Apparat für die bearbeitung von halbleitern

Info

Publication number: DE60022221D1
Authority: DE; Germany
Prior art keywords: semiconductors; machining; machining semiconductors
Prior art date: 1999-10-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE60022221T

Other languages

English (en)

Other versions

DE60022221T2 (de

Inventor

Yuji Maeda

Koji Nakanishi

Nobuo Tokai

Ichiro Kawai

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Applied Materials Inc

Original Assignee

Applied Materials Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1999-10-29

Filing date

2000-10-20

Publication date

2005-09-29

2000-10-20 Application filed by Applied Materials Inc filed Critical Applied Materials Inc

2005-09-29 Publication of DE60022221D1 publication Critical patent/DE60022221D1/de

2006-06-22 Application granted granted Critical

2006-06-22 Publication of DE60022221T2 publication Critical patent/DE60022221T2/de

2020-10-21 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H10P72/7611—
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- H10P72/0436—
- H10P72/74—

Landscapes

Chemical & Material Sciences (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Chemical Vapour Deposition (AREA)
Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

DE60022221T 1999-10-29 2000-10-20 Apparat für die bearbeitung von halbleitern Expired - Fee Related DE60022221T2 (de)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP30954999A JP4592849B2 (ja)	1999-10-29	1999-10-29	半導体製造装置
JP30954999		1999-10-29
PCT/JP2000/007340 WO2001033617A1 (en)	1999-10-29	2000-10-20	Semiconductor-manufacturing apparatus

Publications (2)

Publication Number	Publication Date
DE60022221D1 true DE60022221D1 (de)	2005-09-29
DE60022221T2 DE60022221T2 (de)	2006-06-22

Family

ID=17994361

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE60022221T Expired - Fee Related DE60022221T2 (de)	1999-10-29	2000-10-20	Apparat für die bearbeitung von halbleitern

Country Status (7)

Country	Link
US (1)	US7393417B1 (de)
EP (1)	EP1235257B1 (de)
JP (1)	JP4592849B2 (de)
KR (1)	KR20020031417A (de)
DE (1)	DE60022221T2 (de)
TW (1)	TW460922B (de)
WO (1)	WO2001033617A1 (de)

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JP5444607B2 (ja) *	2007-10-31	2014-03-19	株式会社Ｓｕｍｃｏ	エピタキシャル膜形成装置用のサセプタ、エピタキシャル膜形成装置、エピタキシャルウェーハの製造方法
US8404049B2 (en) *	2007-12-27	2013-03-26	Memc Electronic Materials, Inc.	Epitaxial barrel susceptor having improved thickness uniformity
JP2009270143A (ja)	2008-05-02	2009-11-19	Nuflare Technology Inc	サセプタ、半導体製造装置及び半導体製造方法
US9070590B2 (en)	2008-05-16	2015-06-30	Mattson Technology, Inc.	Workpiece breakage prevention method and apparatus
US8042697B2 (en) *	2008-06-30	2011-10-25	Memc Electronic Materials, Inc.	Low thermal mass semiconductor wafer support
EP2562291A1 (de) *	2008-08-29	2013-02-27	Veeco Instruments Inc.	Waferträger mit veränderlicher thermischer Beständigkeit
US20100098519A1 (en) *	2008-10-17	2010-04-22	Memc Electronic Materials, Inc.	Support for a semiconductor wafer in a high temperature environment
JP5184302B2 (ja) *	2008-11-04	2013-04-17	ＳｕｍｃｏＴｅｃｈｘｉｖ株式会社	サセプタ装置、エピタキシャルウェハの製造装置、および、エピタキシャルウェハの製造方法
JP5620114B2 (ja) *	2010-01-29	2014-11-05	大日本スクリーン製造株式会社	熱処理方法および熱処理装置
US8129284B2 (en)	2009-04-28	2012-03-06	Dainippon Screen Mfg. Co., Ltd.	Heat treatment method and heat treatment apparatus for heating substrate by light irradiation
JP5869899B2 (ja) *	2011-04-01	2016-02-24	株式会社日立国際電気	基板処理装置、半導体装置の製造方法、基板処理方法及びサセプタカバー
KR20130111029A (ko) *	2012-03-30	2013-10-10	삼성전자주식회사	화학 기상 증착 장치용 서셉터 및 이를 구비하는 화학 기상 증착 장치
US10316412B2 (en)	2012-04-18	2019-06-11	Veeco Instruments Inc.	Wafter carrier for chemical vapor deposition systems
US9401271B2 (en)	2012-04-19	2016-07-26	Sunedison Semiconductor Limited (Uen201334164H)	Susceptor assemblies for supporting wafers in a reactor apparatus
US10167571B2 (en)	2013-03-15	2019-01-01	Veeco Instruments Inc.	Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems
US9532401B2 (en) *	2013-03-15	2016-12-27	Applied Materials, Inc.	Susceptor support shaft with uniformity tuning lenses for EPI process
TWI609991B (zh) *	2013-06-05	2018-01-01	維克儀器公司	具有熱一致性改善特色的晶圓舟盒
CN103456672B (zh) *	2013-09-04	2016-03-09	沈阳拓荆科技有限公司	开放式销用支板
JP6189164B2 (ja) *	2013-09-30	2017-08-30	住友電工デバイス・イノベーション株式会社	成長装置
US10658222B2 (en)	2015-01-16	2020-05-19	Lam Research Corporation	Moveable edge coupling ring for edge process control during semiconductor wafer processing
US20170032992A1 (en) *	2015-07-31	2017-02-02	Infineon Technologies Ag	Substrate carrier, a method and a processing device
US10770336B2 (en) *	2017-08-08	2020-09-08	Asm Ip Holding B.V.	Substrate lift mechanism and reactor including same
JP6878212B2 (ja) *	2017-09-07	2021-05-26	昭和電工株式会社	サセプタ、ｃｖｄ装置及びエピタキシャルウェハの製造方法
SG11201907515WA (en)	2017-11-21	2019-09-27	Lam Res Corp	Bottom and middle edge rings
CN108962782B (zh) *	2018-04-28	2025-02-14	北京艾姆希半导体科技有限公司	一种晶片加热装置及晶片加热装置的制造方法
US11798789B2 (en)	2018-08-13	2023-10-24	Lam Research Corporation	Replaceable and/or collapsible edge ring assemblies for plasma sheath tuning incorporating edge ring positioning and centering features
CN112420591B (zh) *	2019-08-20	2022-06-10	长鑫存储技术有限公司	加热板及控制晶圆表面温度的方法
CN112786547B (zh) *	2019-11-01	2023-10-13	神讯电脑(昆山)有限公司	散热架构
CN114761615B (zh) *	2019-12-20	2024-07-05	苏州晶湛半导体有限公司	一种晶圆承载盘及化学气相淀积设备
US12444579B2 (en)	2020-03-23	2025-10-14	Lam Research Corporation	Mid-ring erosion compensation in substrate processing systems
CN113818003A (zh) *	2020-06-19	2021-12-21	拓荆科技股份有限公司	一种薄膜制备方法及设备

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JPS61215289A (ja) *	1985-03-19	1986-09-25	Toshiba Mach Co Ltd	気相成長装置
JPS61288416A (ja) *	1985-06-17	1986-12-18	Toshiba Corp	半導体基板加熱用サセプタ
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1999
- 1999-10-29 JP JP30954999A patent/JP4592849B2/ja not_active Expired - Lifetime
2000
- 2000-10-20 WO PCT/JP2000/007340 patent/WO2001033617A1/ja not_active Ceased
- 2000-10-20 US US10/111,555 patent/US7393417B1/en not_active Expired - Lifetime
- 2000-10-20 KR KR1020027002513A patent/KR20020031417A/ko not_active Ceased
- 2000-10-20 DE DE60022221T patent/DE60022221T2/de not_active Expired - Fee Related
- 2000-10-20 EP EP00969956A patent/EP1235257B1/de not_active Expired - Lifetime
- 2000-10-26 TW TW089122599A patent/TW460922B/zh not_active IP Right Cessation

Also Published As

Publication number	Publication date
EP1235257A4 (de)	2002-10-29
TW460922B (en)	2001-10-21
US7393417B1 (en)	2008-07-01
JP2001126995A (ja)	2001-05-11
DE60022221T2 (de)	2006-06-22
EP1235257A1 (de)	2002-08-28
JP4592849B2 (ja)	2010-12-08
KR20020031417A (ko)	2002-05-01
EP1235257B1 (de)	2005-08-24
WO2001033617A1 (en)	2001-05-10

Publication	Publication Date	Title
DE60022221D1 (de)	2005-09-29	Apparat für die bearbeitung von halbleitern
DE60035759D1 (de)	2007-09-13	Gerät für die Plattierung
DE60043505D1 (de)	2010-01-21	Apparat für die plasma-behandlung
DE59910443D1 (de)	2004-10-14	Bearbeitungsvorrichtung für Werkstücke
DE69936658D1 (de)	2007-09-06	Steuervorrichtung für die positionierung von meeresseismischen kabelstrecken
DE60036291D1 (de)	2007-10-18	Gasverteilungsvorrichtung für die halbleiterbearbeitung
DE10083204T1 (de)	2002-01-31	Gasverteileinrichtung für die Halbleiterbearbeitung
DE69522195D1 (de)	2001-09-20	Herstellungsverfahren für Halbleiteranordnungen
DE19882662T1 (de)	2000-08-03	Wafertransportvorrichtung für Mehrstationswerkzeug
DE69937935D1 (de)	2008-02-21	Einrichtung zum bestücken von bauteilen
DE69834778D1 (de)	2006-07-20	Haltevorrichtung für Halbleiter
FI991186L (fi)	2000-11-26	Menetelmä ternimaidon käsittelemiseksi
IL144414A0 (en)	2002-05-23	Work inspection apparatus
TW578795U (en)	2004-03-01	Workpiece inspection apparatus
DE60042912D1 (de)	2009-10-22	Kühlvorrichtung für v-motor
DE59810022D1 (de)	2003-12-04	Vorrichtung zum Superfinishen bearbeiteter Oberflächen
DE50005030D1 (de)	2004-02-19	Positioniervorrichtung für werkstückträger oder werkstücke
DE59801477D1 (de)	2001-10-18	Spanneinrichtung für werkstücke
DE50008108D1 (de)	2004-11-11	Bearbeitungseinrichtung für plattenförmige werkstücke
DE60000461D1 (de)	2002-10-24	Spannvorrichtung für Werkzeugmaschinen
DE69917191D1 (de)	2004-06-17	Werkstückbearbeitungsvorrichtung
DE69930027D1 (de)	2006-04-27	Metallisierungsverfahren für Halbleiter
DE69918371D1 (de)	2004-08-05	Vorrichtung zum Fördern von Teilen
ID27828A (id)	2001-04-26	Apparatus untuk pembuntutan satelit-satelit tak-serempak
DE59902163D1 (de)	2002-09-05	Spannvorrichtung für Werkzeugspindel

Legal Events

Date	Code	Title	Description
2006-09-14	8364	No opposition during term of opposition
2010-08-19	8339	Ceased/non-payment of the annual fee