DE60040300D1 - Schaltkreis zum schutz der signaleingänge differentieller verstärker gegen elektrostatische entladungen - Google Patents
Schaltkreis zum schutz der signaleingänge differentieller verstärker gegen elektrostatische entladungenInfo
- Publication number
- DE60040300D1 DE60040300D1 DE60040300T DE60040300T DE60040300D1 DE 60040300 D1 DE60040300 D1 DE 60040300D1 DE 60040300 T DE60040300 T DE 60040300T DE 60040300 T DE60040300 T DE 60040300T DE 60040300 D1 DE60040300 D1 DE 60040300D1
- Authority
- DE
- Germany
- Prior art keywords
- protection
- circuit
- signal inputs
- differential amplifiers
- against electrostatic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/444—Diode used as protection means in an amplifier, e.g. as a limiter or as a switch
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16180199P | 1999-10-27 | 1999-10-27 | |
| US09/541,872 US6400541B1 (en) | 1999-10-27 | 2000-04-03 | Circuit for protection of differential inputs against electrostatic discharge |
| PCT/US2000/041118 WO2001031708A1 (en) | 1999-10-27 | 2000-10-11 | Circuit for protection of differential amplifier inputs against electrostatic discharge |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE60040300D1 true DE60040300D1 (de) | 2008-10-30 |
Family
ID=26858126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60040300T Expired - Lifetime DE60040300D1 (de) | 1999-10-27 | 2000-10-11 | Schaltkreis zum schutz der signaleingänge differentieller verstärker gegen elektrostatische entladungen |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6400541B1 (de) |
| EP (1) | EP1236229B1 (de) |
| CN (1) | CN1175491C (de) |
| DE (1) | DE60040300D1 (de) |
| WO (1) | WO2001031708A1 (de) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4037029B2 (ja) * | 2000-02-21 | 2008-01-23 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
| KR20020085101A (ko) * | 2001-05-04 | 2002-11-16 | 삼성전자 주식회사 | 다이오드를 이용한 정전기적 방전으로부터의 보호 회로 |
| US6738248B1 (en) * | 2002-10-28 | 2004-05-18 | Lsi Logic Corporation | ESD protection circuit for low amplitude signals |
| TWI268657B (en) * | 2003-03-27 | 2006-12-11 | Realtek Semiconductor Corp | Variable gain amplifier |
| US7026839B1 (en) | 2003-06-26 | 2006-04-11 | Marvell International Ltd. | Circuits, architectures, systems and methods for overvoltage protection |
| JP4114751B2 (ja) * | 2004-03-31 | 2008-07-09 | シャープ株式会社 | 半導体装置 |
| EP1617473A1 (de) * | 2004-07-13 | 2006-01-18 | Koninklijke Philips Electronics N.V. | Elektronisches Bauelement mit ESD Bauelement |
| US20060063285A1 (en) * | 2004-09-23 | 2006-03-23 | Miller Joseph P | Methods for measuring die temperature |
| KR100617801B1 (ko) * | 2005-05-27 | 2006-08-28 | 삼성전자주식회사 | 이동통신 단말기의 정전기 및 감전 보호 장치 |
| CN100449749C (zh) * | 2005-12-20 | 2009-01-07 | 联咏科技股份有限公司 | 具有静电放电保护电路的差动输入输出级 |
| TWI390699B (zh) * | 2008-01-31 | 2013-03-21 | Realtek Semiconductor Corp | 具有靜電保護功能之網路通訊裝置 |
| EP2148434A1 (de) * | 2008-07-24 | 2010-01-27 | Seiko Epson Corporation | Funkfrequenzschaltung mit elektrostatischem Schutz und Impedanzpassung und Verfahren zu ihrer Eichung |
| KR101036208B1 (ko) * | 2008-12-24 | 2011-05-20 | 매그나칩 반도체 유한회사 | 정전기 방전 보호회로 |
| CN102255626B (zh) * | 2011-06-30 | 2013-08-21 | 清华大学 | 一种基于∏型网络带有静电放电保护的毫米波频段接收机 |
| JP5872714B2 (ja) * | 2012-02-15 | 2016-03-01 | クゥアルコム・インコーポレイテッドQualcomm Incorporated | 差動入力/出力インタフェースのためのサージ保護 |
| US9219055B2 (en) | 2012-06-14 | 2015-12-22 | International Business Machines Corporation | Structure and method for dynamic biasing to improve ESD robustness of current mode logic (CML) drivers |
| EP2741330A1 (de) * | 2012-12-06 | 2014-06-11 | Nxp B.V. | ESD-Schutz |
| CN107769757B (zh) * | 2017-10-10 | 2020-12-01 | 西安微电子技术研究所 | 一种比较器抗静电电路及其工作方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3879640A (en) | 1974-02-11 | 1975-04-22 | Rca Corp | Protective diode network for MOS devices |
| US4044313A (en) | 1976-12-01 | 1977-08-23 | Rca Corporation | Protective network for an insulated-gate field-effect (IGFET) differential amplifier |
| DE2751289A1 (de) | 1977-11-16 | 1979-05-17 | Siemens Ag | Mos-fet-differenzverstaerker |
| US4158863A (en) * | 1978-03-07 | 1979-06-19 | American Optical Corporation | Input overload protection circuit |
| NL8100242A (nl) * | 1981-01-20 | 1982-08-16 | Philips Nv | Overspanningsbeveiliging van een lijncircuit. |
| JPH02246613A (ja) | 1989-03-20 | 1990-10-02 | Fujitsu Ltd | 静電破壊保護回路 |
| JPH0722928A (ja) | 1993-06-24 | 1995-01-24 | Nec Corp | 半導体集積回路装置 |
| US5764464A (en) * | 1995-11-17 | 1998-06-09 | Burr-Brown Corporation | Low input bias current circuit |
| JPH1146120A (ja) * | 1997-07-25 | 1999-02-16 | Mitsubishi Electric Corp | 差動増幅回路 |
| US5862031A (en) | 1997-11-26 | 1999-01-19 | Analog Devices, Inc. | ESD protection circuit for integrated circuits having a bipolar differential input |
-
2000
- 2000-04-03 US US09/541,872 patent/US6400541B1/en not_active Expired - Lifetime
- 2000-10-11 DE DE60040300T patent/DE60040300D1/de not_active Expired - Lifetime
- 2000-10-11 WO PCT/US2000/041118 patent/WO2001031708A1/en not_active Ceased
- 2000-10-11 CN CNB008150060A patent/CN1175491C/zh not_active Expired - Lifetime
- 2000-10-11 EP EP00981012A patent/EP1236229B1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1384980A (zh) | 2002-12-11 |
| WO2001031708A1 (en) | 2001-05-03 |
| US6400541B1 (en) | 2002-06-04 |
| WO2001031708A8 (en) | 2001-06-14 |
| EP1236229B1 (de) | 2008-09-17 |
| CN1175491C (zh) | 2004-11-10 |
| EP1236229A1 (de) | 2002-09-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |