CN1384980A - 差动放大器输入端防静电放电保护电路 - Google Patents
差动放大器输入端防静电放电保护电路 Download PDFInfo
- Publication number
- CN1384980A CN1384980A CN00815006.0A CN00815006A CN1384980A CN 1384980 A CN1384980 A CN 1384980A CN 00815006 A CN00815006 A CN 00815006A CN 1384980 A CN1384980 A CN 1384980A
- Authority
- CN
- China
- Prior art keywords
- circuit
- pin
- virtual earth
- differential input
- earth node
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/444—Diode used as protection means in an amplifier, e.g. as a limiter or as a switch
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Amplifiers (AREA)
Abstract
Description
| 插针之间的静电放电 | 放电通道 | |
| +ve | -ve | |
| IP | IPB | 二极管30+42 |
| IP | VEE | 二极管30+52R |
| VEE | IP | 二极管52+32 |
| IP | VCC | 二极管30+50 |
| VCC | IP | 二极管32+50R |
Claims (22)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16180199P | 1999-10-27 | 1999-10-27 | |
| US60/161,801 | 1999-10-27 | ||
| US09/541,872 | 2000-04-03 | ||
| US09/541,872 US6400541B1 (en) | 1999-10-27 | 2000-04-03 | Circuit for protection of differential inputs against electrostatic discharge |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1384980A true CN1384980A (zh) | 2002-12-11 |
| CN1175491C CN1175491C (zh) | 2004-11-10 |
Family
ID=26858126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB008150060A Expired - Lifetime CN1175491C (zh) | 1999-10-27 | 2000-10-11 | 差动放大器输入端防静电放电保护电路 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6400541B1 (zh) |
| EP (1) | EP1236229B1 (zh) |
| CN (1) | CN1175491C (zh) |
| DE (1) | DE60040300D1 (zh) |
| WO (1) | WO2001031708A1 (zh) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100449749C (zh) * | 2005-12-20 | 2009-01-07 | 联咏科技股份有限公司 | 具有静电放电保护电路的差动输入输出级 |
| CN1985370B (zh) * | 2004-07-13 | 2010-09-08 | Nxp股份有限公司 | 包含esd器件的电子器件 |
| CN102255626A (zh) * | 2011-06-30 | 2011-11-23 | 清华大学 | 一种基于π型网络带有静电放电保护的毫米波频段接收机 |
| US8179645B2 (en) | 2008-01-31 | 2012-05-15 | Realtek Semiconductor Corp. | Network communication processing apparatus with ESD protection |
| CN101764397B (zh) * | 2008-12-24 | 2013-06-05 | 美格纳半导体有限会社 | 静电放电保护电路 |
| CN103855703A (zh) * | 2012-12-06 | 2014-06-11 | Nxp股份有限公司 | Esd保护 |
| CN107769757A (zh) * | 2017-10-10 | 2018-03-06 | 西安微电子技术研究所 | 一种比较器抗静电电路及其工作方法 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4037029B2 (ja) * | 2000-02-21 | 2008-01-23 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
| KR20020085101A (ko) * | 2001-05-04 | 2002-11-16 | 삼성전자 주식회사 | 다이오드를 이용한 정전기적 방전으로부터의 보호 회로 |
| US6738248B1 (en) * | 2002-10-28 | 2004-05-18 | Lsi Logic Corporation | ESD protection circuit for low amplitude signals |
| TWI268657B (en) * | 2003-03-27 | 2006-12-11 | Realtek Semiconductor Corp | Variable gain amplifier |
| US7026839B1 (en) | 2003-06-26 | 2006-04-11 | Marvell International Ltd. | Circuits, architectures, systems and methods for overvoltage protection |
| JP4114751B2 (ja) * | 2004-03-31 | 2008-07-09 | シャープ株式会社 | 半導体装置 |
| US20060063285A1 (en) * | 2004-09-23 | 2006-03-23 | Miller Joseph P | Methods for measuring die temperature |
| KR100617801B1 (ko) * | 2005-05-27 | 2006-08-28 | 삼성전자주식회사 | 이동통신 단말기의 정전기 및 감전 보호 장치 |
| EP2148434A1 (en) * | 2008-07-24 | 2010-01-27 | Seiko Epson Corporation | Radio frequency circuit with electrostatic protection and impedance matching and method for calibrating the same |
| WO2013120259A1 (en) * | 2012-02-15 | 2013-08-22 | Qualcomm Incorporated | Surge protection for differential input/output interfaces |
| US9219055B2 (en) | 2012-06-14 | 2015-12-22 | International Business Machines Corporation | Structure and method for dynamic biasing to improve ESD robustness of current mode logic (CML) drivers |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3879640A (en) | 1974-02-11 | 1975-04-22 | Rca Corp | Protective diode network for MOS devices |
| US4044313A (en) | 1976-12-01 | 1977-08-23 | Rca Corporation | Protective network for an insulated-gate field-effect (IGFET) differential amplifier |
| DE2751289A1 (de) | 1977-11-16 | 1979-05-17 | Siemens Ag | Mos-fet-differenzverstaerker |
| US4158863A (en) * | 1978-03-07 | 1979-06-19 | American Optical Corporation | Input overload protection circuit |
| NL8100242A (nl) * | 1981-01-20 | 1982-08-16 | Philips Nv | Overspanningsbeveiliging van een lijncircuit. |
| JPH02246613A (ja) | 1989-03-20 | 1990-10-02 | Fujitsu Ltd | 静電破壊保護回路 |
| JPH0722928A (ja) | 1993-06-24 | 1995-01-24 | Nec Corp | 半導体集積回路装置 |
| US5764464A (en) * | 1995-11-17 | 1998-06-09 | Burr-Brown Corporation | Low input bias current circuit |
| JPH1146120A (ja) * | 1997-07-25 | 1999-02-16 | Mitsubishi Electric Corp | 差動増幅回路 |
| US5862031A (en) | 1997-11-26 | 1999-01-19 | Analog Devices, Inc. | ESD protection circuit for integrated circuits having a bipolar differential input |
-
2000
- 2000-04-03 US US09/541,872 patent/US6400541B1/en not_active Expired - Lifetime
- 2000-10-11 CN CNB008150060A patent/CN1175491C/zh not_active Expired - Lifetime
- 2000-10-11 WO PCT/US2000/041118 patent/WO2001031708A1/en not_active Ceased
- 2000-10-11 DE DE60040300T patent/DE60040300D1/de not_active Expired - Lifetime
- 2000-10-11 EP EP00981012A patent/EP1236229B1/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1985370B (zh) * | 2004-07-13 | 2010-09-08 | Nxp股份有限公司 | 包含esd器件的电子器件 |
| CN100449749C (zh) * | 2005-12-20 | 2009-01-07 | 联咏科技股份有限公司 | 具有静电放电保护电路的差动输入输出级 |
| US8179645B2 (en) | 2008-01-31 | 2012-05-15 | Realtek Semiconductor Corp. | Network communication processing apparatus with ESD protection |
| CN101764397B (zh) * | 2008-12-24 | 2013-06-05 | 美格纳半导体有限会社 | 静电放电保护电路 |
| CN102255626A (zh) * | 2011-06-30 | 2011-11-23 | 清华大学 | 一种基于π型网络带有静电放电保护的毫米波频段接收机 |
| CN102255626B (zh) * | 2011-06-30 | 2013-08-21 | 清华大学 | 一种基于∏型网络带有静电放电保护的毫米波频段接收机 |
| CN103855703A (zh) * | 2012-12-06 | 2014-06-11 | Nxp股份有限公司 | Esd保护 |
| CN103855703B (zh) * | 2012-12-06 | 2017-09-22 | 安世有限公司 | Esd保护 |
| CN107769757A (zh) * | 2017-10-10 | 2018-03-06 | 西安微电子技术研究所 | 一种比较器抗静电电路及其工作方法 |
| CN107769757B (zh) * | 2017-10-10 | 2020-12-01 | 西安微电子技术研究所 | 一种比较器抗静电电路及其工作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2001031708A8 (en) | 2001-06-14 |
| EP1236229A1 (en) | 2002-09-04 |
| US6400541B1 (en) | 2002-06-04 |
| EP1236229B1 (en) | 2008-09-17 |
| CN1175491C (zh) | 2004-11-10 |
| DE60040300D1 (de) | 2008-10-30 |
| WO2001031708A1 (en) | 2001-05-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1175491C (zh) | 差动放大器输入端防静电放电保护电路 | |
| US8049250B2 (en) | Circuit and method for power clamp triggered dual SCR ESD protection | |
| US6501630B1 (en) | Bi-directional ESD diode structure | |
| US7023677B2 (en) | ESD protection designs with parallel LC tank for Giga-Hertz RF integrated circuits | |
| JP4896137B2 (ja) | Esd保護回路 | |
| US6674129B1 (en) | ESD diode structure | |
| US6693780B2 (en) | ESD protection devices for a differential pair of transistors | |
| JP5024808B2 (ja) | 集積回路のための入力段esd保護 | |
| US5510947A (en) | Electrostatic discharge protective device having a reduced current leakage | |
| US20050045909A1 (en) | Electrostatic discharge protection for integrated circuit devices | |
| CN100557802C (zh) | 高频集成电路 | |
| US6429489B1 (en) | Electrostatic discharge power clamp circuit | |
| EP0735640A1 (en) | Protection circuit for semiconductor devices | |
| US20110038087A1 (en) | Discharge protection apparatus and method of protecting an electronic device | |
| US7463466B2 (en) | Integrated circuit with ESD protection circuit | |
| US7042689B2 (en) | High voltage tolerant ESD design for analog and RF applications in deep submicron CMOS technologies | |
| JP3899052B2 (ja) | 集積回路 | |
| US6740934B2 (en) | ESD protection scheme for outputs with resistor loading | |
| US8000067B1 (en) | Method and apparatus for improving supply noise rejection | |
| JP2838836B2 (ja) | 半導体集積回路及び半導体集積回路装置 | |
| US6731488B2 (en) | Dual emitter transistor with ESD protection | |
| US7167350B2 (en) | Design implementation to suppress latchup in voltage tolerant circuits | |
| US6831520B2 (en) | Amplifier circuit apparatus and method of EMI suppression | |
| JP3498755B2 (ja) | 増幅器の出力ノードのspu条件下の保護デバイス | |
| JP3022674B2 (ja) | 静電保護回路 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CI01 | Publication of corrected invention patent application |
Correction item: Priority Correct: 1999.10.27 US 60/161,801|2000.04.03 US 09/541,872 False: 2000.04.03 US 09/541,872 Number: 45 Volume: 20 |
|
| CI03 | Correction of invention patent |
Correction item: Priority Correct: 1999.10.27 US 60/161,801|2000.04.03 US 09/541,872 False: 2000.04.03 US 09/541,872 Number: 45 Page: The title page Volume: 20 |
|
| ERR | Gazette correction |
Free format text: CORRECT: PRIORITY; FROM: 2000.4.3 US 09/541,872 TO: 1999.10.27 US 60/161,801 2000.4.3 US 09/541,872 |
|
| ASS | Succession or assignment of patent right |
Owner name: MEDIATEK INC. Free format text: FORMER OWNER: ANALOG DEVICES, INC. Effective date: 20080404 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20080404 Address after: Hsinchu Science Industrial Park, Taiwan Patentee after: MediaTek.Inc Address before: Massachusetts, USA Patentee before: Analog Devices, Inc. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20041110 |