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DE60028629D1 - Halbleiterdiode - Google Patents

Halbleiterdiode

Info

Publication number
DE60028629D1
DE60028629D1 DE60028629T DE60028629T DE60028629D1 DE 60028629 D1 DE60028629 D1 DE 60028629D1 DE 60028629 T DE60028629 T DE 60028629T DE 60028629 T DE60028629 T DE 60028629T DE 60028629 D1 DE60028629 D1 DE 60028629D1
Authority
DE
Germany
Prior art keywords
semiconductor diode
diode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60028629T
Other languages
English (en)
Other versions
DE60028629T2 (de
Inventor
Noriyuki Iwamuro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of DE60028629D1 publication Critical patent/DE60028629D1/de
Application granted granted Critical
Publication of DE60028629T2 publication Critical patent/DE60028629T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
DE60028629T 1999-03-02 2000-01-27 Halbleiterdiode Expired - Fee Related DE60028629T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5348399 1999-03-02
JP11053483A JP2000252477A (ja) 1999-03-02 1999-03-02 半導体装置

Publications (2)

Publication Number Publication Date
DE60028629D1 true DE60028629D1 (de) 2006-07-27
DE60028629T2 DE60028629T2 (de) 2006-10-12

Family

ID=12944102

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60028629T Expired - Fee Related DE60028629T2 (de) 1999-03-02 2000-01-27 Halbleiterdiode

Country Status (4)

Country Link
US (1) US6346740B1 (de)
EP (1) EP1033761B1 (de)
JP (1) JP2000252477A (de)
DE (1) DE60028629T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016051973A1 (ja) 2014-10-03 2016-04-07 富士電機株式会社 半導体装置および半導体装置の製造方法
DE102020119349B4 (de) 2020-07-22 2025-06-18 Infineon Technologies Austria Ag Einzelchipleistungsdiode und Verfahren zur Herstellung einer Einzelchipleistungsdiode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61269370A (ja) * 1985-05-24 1986-11-28 Fujitsu Ltd 半導体装置
JP3146650B2 (ja) * 1992-07-15 2001-03-19 富士電機株式会社 パワー集積回路
EP0810670B1 (de) * 1996-05-31 2004-07-28 STMicroelectronics S.r.l. Vertikaler Leistungsbipolartransistor mit integriertem Fühlwiderstand
JP3807023B2 (ja) * 1997-05-27 2006-08-09 富士電機デバイステクノロジー株式会社 電力用ダイオード
JP3287269B2 (ja) * 1997-06-02 2002-06-04 富士電機株式会社 ダイオードとその製造方法

Also Published As

Publication number Publication date
US6346740B1 (en) 2002-02-12
EP1033761A3 (de) 2002-03-13
EP1033761B1 (de) 2006-06-14
JP2000252477A (ja) 2000-09-14
EP1033761A2 (de) 2000-09-06
DE60028629T2 (de) 2006-10-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee