DE60020737D1 - Sic-einkristall und herstellungsverfahren dafür - Google Patents

Sic-einkristall und herstellungsverfahren dafür

Info

Publication number: DE60020737D1
Authority: DE; Germany
Prior art keywords: einkristall; sic; manufacturing; method therefor; therefor
Prior art date: 1999-09-06
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE60020737T

Other languages

English (en)

Other versions

DE60020737T2 (de

Inventor

Hiromu Shiomi

Tsunenobu Kimoto

Hiroyuki Matsunami

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sumitomo Electric Industries Ltd

Original Assignee

Mitsubishi Corp

Kansai Electric Power Co Inc

Sixon Inc

Sumitomo Electric Industries Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1999-09-06

Filing date

2000-09-06

Publication date

2005-07-14

2000-09-06 Application filed by Mitsubishi Corp, Kansai Electric Power Co Inc, Sixon Inc, Sumitomo Electric Industries Ltd filed Critical Mitsubishi Corp

2005-07-14 Publication of DE60020737D1 publication Critical patent/DE60020737D1/de

2006-03-16 Application granted granted Critical

2006-03-16 Publication of DE60020737T2 publication Critical patent/DE60020737T2/de

2020-09-07 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

DE60020737T 1999-09-06 2000-09-06 Sic-einkristall und herstellungsverfahren dafür Expired - Lifetime DE60020737T2 (de)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP25157299		1999-09-06
JP25157299		1999-09-06
PCT/JP2000/006054 WO2001018286A1 (en)	1999-09-06	2000-09-06	Sic SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME

Publications (2)

Publication Number	Publication Date
DE60020737D1 true DE60020737D1 (de)	2005-07-14
DE60020737T2 DE60020737T2 (de)	2006-03-16

Family

ID=17224820

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE60020737T Expired - Lifetime DE60020737T2 (de)	1999-09-06	2000-09-06	Sic-einkristall und herstellungsverfahren dafür

Country Status (6)

Country	Link
US (1)	US6660084B1 (de)
EP (1)	EP1243674B1 (de)
JP (1)	JP3692076B2 (de)
DE (1)	DE60020737T2 (de)
TW (1)	TW526300B (de)
WO (1)	WO2001018286A1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE60033829T2 (de)	1999-09-07	2007-10-11	Sixon Inc.	SiC-HALBLEITERSCHEIBE, SiC-HALBLEITERBAUELEMENT SOWIE HERSTELLUNGSVERFAHREN FÜR EINE SiC-HALBLEITERSCHEIBE
JP4253974B2 (ja) *	1999-12-22	2009-04-15	住友電気工業株式会社	ＳｉＣ単結晶およびその成長方法
JP4716558B2 (ja) *	2000-12-12	2011-07-06	株式会社デンソー	炭化珪素基板
JP4581270B2 (ja) *	2001-03-05	2010-11-17	住友電気工業株式会社	ＳｉＣ半導体のイオン注入層及びその製造方法
TW583354B (en) *	2001-05-25	2004-04-11	Mitsui Shipbuilding Eng	Method for producing amorphous SiC wafer
EP1403404A4 (de) *	2001-06-04	2007-08-01	New Ind Res Organization	Einkristallines siliciumcarbid und verfahren zu seiner herstellung
JP4317189B2 (ja) *	2003-07-30	2009-08-19	関西電力株式会社	高耐熱半導体装置
JP2010076967A (ja) *	2008-09-25	2010-04-08	Sumitomo Electric Ind Ltd	炭化ケイ素基板の製造方法および炭化ケイ素基板
WO2010140564A1 (ja) *	2009-06-01	2010-12-09	三菱化学株式会社	窒化物半導体結晶およびその製造方法
JP5415853B2 (ja) *	2009-07-10	2014-02-12	東京エレクトロン株式会社	表面処理方法
EP2518757A1 (de) *	2009-12-25	2012-10-31	Sumitomo Electric Industries, Ltd.	Siliciumcarbidsubstrat
JP2011243770A (ja) *	2010-05-19	2011-12-01	Sumitomo Electric Ind Ltd	炭化珪素基板、半導体装置、炭化珪素基板の製造方法
DE112011105073T5 (de) *	2011-03-22	2013-12-24	Sumitomo Electric Industries, Ltd.	Siliziumkarbidsubstrat
JP5879770B2 (ja) *	2011-06-27	2016-03-08	住友電気工業株式会社	半導体装置およびその製造方法
JP5742657B2 (ja) *	2011-10-20	2015-07-01	住友電気工業株式会社	炭化珪素半導体装置およびその製造方法
CN102592976B (zh) *	2012-03-22	2014-04-02	西安电子科技大学	P型重掺杂碳化硅薄膜外延制备方法
JP5943509B2 (ja) *	2012-03-30	2016-07-05	国立研究開発法人産業技術総合研究所	炭化珪素基板への成膜方法
US8860040B2 (en)	2012-09-11	2014-10-14	Dow Corning Corporation	High voltage power semiconductor devices on SiC
US9018639B2 (en)	2012-10-26	2015-04-28	Dow Corning Corporation	Flat SiC semiconductor substrate
US9797064B2 (en)	2013-02-05	2017-10-24	Dow Corning Corporation	Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9017804B2 (en)	2013-02-05	2015-04-28	Dow Corning Corporation	Method to reduce dislocations in SiC crystal growth
US9738991B2 (en)	2013-02-05	2017-08-22	Dow Corning Corporation	Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US8940614B2 (en)	2013-03-15	2015-01-27	Dow Corning Corporation	SiC substrate with SiC epitaxial film
US9279192B2 (en)	2014-07-29	2016-03-08	Dow Corning Corporation	Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
JP2016132604A (ja) *	2015-01-21	2016-07-25	住友電気工業株式会社	炭化珪素基板および炭化珪素基板の製造方法
WO2017064913A1 (ja)	2015-10-13	2017-04-20	住友電気工業株式会社	半導体積層体
KR20240037346A (ko)	2021-08-05	2024-03-21	와커 헤미 아게	2'-푸코실락토오스의 생체촉매 합성을 위한 특이적 알파-1,2-푸코실트랜스퍼라제
EP4415024A4 (de) *	2021-10-05	2025-12-31	Kwansei Gakuin Educational Found	Verfahren zur reduzierung von stapelfehlern in siliciumcarbid und mit diesem verfahren hergestellte struktur

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5948792B2 (ja)	1982-08-17	1984-11-28	工業技術院長	炭化けい素結晶成長法
JPH0637353B2 (ja)	1988-04-13	1994-05-18	新日本製鐵株式会社	炭化珪素単結晶成長方法および装置
JPH0416597A (ja) *	1990-05-09	1992-01-21	Sharp Corp	炭化珪素単結晶の製造方法
JPH07267795A (ja) *	1994-03-25	1995-10-17	Nippon Steel Corp	ＳｉＣ単結晶の成長方法
JP2804860B2 (ja)	1991-04-18	1998-09-30	新日本製鐵株式会社	ＳｉＣ単結晶およびその成長方法
US6063185A (en) *	1998-10-09	2000-05-16	Cree, Inc.	Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy

2000
- 2000-09-06 TW TW089118248A patent/TW526300B/zh not_active IP Right Cessation
- 2000-09-06 WO PCT/JP2000/006054 patent/WO2001018286A1/ja not_active Ceased
- 2000-09-06 US US10/069,503 patent/US6660084B1/en not_active Expired - Lifetime
- 2000-09-06 EP EP00956965A patent/EP1243674B1/de not_active Expired - Lifetime
- 2000-09-06 DE DE60020737T patent/DE60020737T2/de not_active Expired - Lifetime
- 2000-09-06 JP JP2001521813A patent/JP3692076B2/ja not_active Expired - Fee Related

Also Published As

Publication number	Publication date
TW526300B (en)	2003-04-01
EP1243674A1 (de)	2002-09-25
DE60020737T2 (de)	2006-03-16
JP3692076B2 (ja)	2005-09-07
US6660084B1 (en)	2003-12-09
EP1243674B1 (de)	2005-06-08
EP1243674A4 (de)	2003-02-05
WO2001018286A1 (en)	2001-03-15

Publication	Publication Date	Title
DE60020737D1 (de)	2005-07-14	Sic-einkristall und herstellungsverfahren dafür
DE69926404D1 (de)	2005-09-01	Mikrofasern und herstellungsverfahren
DE69929456D1 (de)	2006-04-06	Nahfeldabtastkopf und herstellungsverfahren
DE60037057D1 (de)	2007-12-27	Halbleiterelement und Herstellungsverfahren dafür
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DE69834561D1 (de)	2006-06-22	Halbleiteranordnung und herstellungsverfahren dafür
DE60143666D1 (de)	2011-01-27	Flachbatterie und herstellungsverfahren dafür
DE60030931D1 (de)	2006-11-09	Halbleiteranordnung und Herstellungsverfahren dafür
DE60045755D1 (de)	2011-05-05	Halbleiterbauelement und dessen Herstellungsverfahren
DE69924155D1 (de)	2005-04-14	Fluoren-copolymere und daraus hergestellte vorrichtungen
DE69936461D1 (de)	2007-08-16	Magnetsensor und zugehöriges herstellungsverfahren
DE60042866D1 (de)	2009-10-15	Niederspannungs-MOS-Anordnung und entsprechendes Herstellungsverfahren
ATE285951T1 (de)	2005-01-15	Orginalitätsverschluss und herstellungverfahren
DE60233444D1 (de)	2009-10-01	Teileanbringvorrichtung und teileanbringverfahren
DE60033906D1 (de)	2007-04-26	Treibriemen und herstellungsverfahren dafür
DE69904731D1 (de)	2003-02-06	Feinzerkleinerer und feinzerkleinerungsverfahren
DE60024378D1 (de)	2006-01-05	Poröser Gegenstand und Herstellungsverfahren dafür
DE60039547D1 (de)	2008-08-28	Bestückungsverfahren und Bestückungsvorrichtung
DE69941874D1 (de)	2010-02-11	Optielektronisches bauelement und herstellungsverfahren
DE60026278D1 (de)	2006-04-27	Anzeigevorrichtung und herstellungsverfahren
DE60038110D1 (de)	2008-04-03	Dämpfer und herstellungsmethode dafür
DE60231538D1 (de)	2009-04-23	Sputtertarget und herstellungsverfahren dafür
DE69937109D1 (de)	2007-10-25	Zahnbürste und herstellungsverfahren
DE69915335D1 (de)	2004-04-08	Vollscheibenfahrzeugrad und herstellungsverfahren
DE69941531D1 (de)	2009-11-26	ie, und Herstellungsverfahren

Legal Events

Date	Code	Title	Description
2006-07-06	8364	No opposition during term of opposition
2008-11-27	8327	Change in the person/name/address of the patent owner	Owner name: SIXON LTD., KYOTO, JP Owner name: SUMITOMO ELECTRIC INDUSTRIES, LTD., OSAKA, JP
2008-12-04	8327	Change in the person/name/address of the patent owner	Owner name: SUMITOMO ELECTRIC INDUSTRIES, LTD., OSAKA, JP

Date

Code

Title

Description

2006-07-06

8364

No opposition during term of opposition

2008-11-27

8327

Change in the person/name/address of the patent owner

Owner name: SIXON LTD., KYOTO, JP

Owner name: SUMITOMO ELECTRIC INDUSTRIES, LTD., OSAKA, JP

2008-12-04