DE3786358D1 - Halbleiterspeicher mit system zum seriellen schnellzugriff. - Google Patents
Halbleiterspeicher mit system zum seriellen schnellzugriff.Info
- Publication number
- DE3786358D1 DE3786358D1 DE8787103433T DE3786358T DE3786358D1 DE 3786358 D1 DE3786358 D1 DE 3786358D1 DE 8787103433 T DE8787103433 T DE 8787103433T DE 3786358 T DE3786358 T DE 3786358T DE 3786358 D1 DE3786358 D1 DE 3786358D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor memory
- quick access
- serial
- serial quick
- access
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F5/00—Methods or arrangements for data conversion without changing the order or content of the data handled
- G06F5/06—Methods or arrangements for data conversion without changing the order or content of the data handled for changing the speed of data flow, i.e. speed regularising or timing, e.g. delay lines, FIFO buffers; over- or underrun control therefor
- G06F5/10—Methods or arrangements for data conversion without changing the order or content of the data handled for changing the speed of data flow, i.e. speed regularising or timing, e.g. delay lines, FIFO buffers; over- or underrun control therefor having a sequence of storage locations each being individually accessible for both enqueue and dequeue operations, e.g. using random access memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1018—Serial bit line access mode, e.g. using bit line address shift registers, bit line address counters, bit line burst counters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1039—Read-write modes for single port memories, i.e. having either a random port or a serial port using pipelining techniques, i.e. using latches between functional memory parts, e.g. row/column decoders, I/O buffers, sense amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Dram (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61052886A JPH0823993B2 (ja) | 1986-03-10 | 1986-03-10 | 半導体記憶装置 |
| JP61052885A JPH0814982B2 (ja) | 1986-03-10 | 1986-03-10 | 半導体記憶装置 |
| JP61052887A JPH0746494B2 (ja) | 1986-03-10 | 1986-03-10 | 半導体記憶装置 |
| JP6436486A JPH0812752B2 (ja) | 1986-03-20 | 1986-03-20 | 半導体記置装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3786358D1 true DE3786358D1 (de) | 1993-08-05 |
| DE3786358T2 DE3786358T2 (de) | 1993-10-14 |
Family
ID=27462841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE87103433T Expired - Fee Related DE3786358T2 (de) | 1986-03-10 | 1987-03-10 | Halbleiterspeicher mit System zum seriellen Schnellzugriff. |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4811305A (de) |
| EP (1) | EP0237030B1 (de) |
| DE (1) | DE3786358T2 (de) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1990004849A1 (en) * | 1988-10-20 | 1990-05-03 | David Siu Fu Chung | Memory structure and method of utilization |
| US4951246A (en) * | 1989-08-08 | 1990-08-21 | Cray Research, Inc. | Nibble-mode dram solid state storage device |
| JPH0821233B2 (ja) * | 1990-03-13 | 1996-03-04 | 株式会社東芝 | 画像メモリおよび画像メモリからデータを読み出す方法 |
| US5111436A (en) * | 1990-10-17 | 1992-05-05 | Subotic Nikola S | 2D charge coupled device memory with acoustic charge transport multiplexer |
| US5255242A (en) * | 1990-12-17 | 1993-10-19 | Texas Instruments Incorporated | Sequential memory |
| MY109127A (en) * | 1992-04-16 | 1996-12-31 | Thomson Consumer Electronics Inc | Multi port memory system |
| EP0573800B1 (de) * | 1992-06-09 | 1997-10-15 | Siemens Aktiengesellschaft | Integrierte Halbleiterspeicheranordnung |
| ATE159377T1 (de) * | 1992-06-09 | 1997-11-15 | Siemens Ag | Integrierte halbleiterspeicheranordnung |
| JPH08185695A (ja) * | 1994-08-30 | 1996-07-16 | Mitsubishi Electric Corp | 半導体記憶装置、その動作方法およびその製造方法 |
| JPH11126491A (ja) * | 1997-08-20 | 1999-05-11 | Fujitsu Ltd | 半導体記憶装置 |
| JP2002133876A (ja) * | 2000-10-23 | 2002-05-10 | Hitachi Ltd | 半導体記憶装置 |
| US11133042B2 (en) * | 2016-06-27 | 2021-09-28 | SK Hynix Inc. | Semiconductor memory system and semiconductor memory device, which can be remotely initialized |
| US10181346B2 (en) | 2016-08-02 | 2019-01-15 | SK Hynix Inc. | Semiconductor devices and operations thereof |
| US11217286B2 (en) | 2016-06-27 | 2022-01-04 | SK Hynix Inc. | Semiconductor memory device with power down operation |
| KR102592359B1 (ko) | 2016-06-27 | 2023-10-20 | 에스케이하이닉스 주식회사 | 반도체장치 |
| US10147471B2 (en) * | 2016-08-02 | 2018-12-04 | SK Hynix Inc. | Semiconductor devices and semiconductor systems |
| US12424253B2 (en) | 2016-08-02 | 2025-09-23 | SK Hynix Inc. | Semiconductor device with power-down signal generation |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4120048A (en) * | 1977-12-27 | 1978-10-10 | Rockwell International Corporation | Memory with simultaneous sequential and random address modes |
| JPS5694589A (en) * | 1979-12-27 | 1981-07-31 | Nec Corp | Memory device |
| JPH069114B2 (ja) * | 1983-06-24 | 1994-02-02 | 株式会社東芝 | 半導体メモリ |
-
1987
- 1987-03-10 DE DE87103433T patent/DE3786358T2/de not_active Expired - Fee Related
- 1987-03-10 US US07/024,212 patent/US4811305A/en not_active Expired - Fee Related
- 1987-03-10 EP EP87103433A patent/EP0237030B1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0237030B1 (de) | 1993-06-30 |
| EP0237030A3 (en) | 1990-02-07 |
| EP0237030A2 (de) | 1987-09-16 |
| DE3786358T2 (de) | 1993-10-14 |
| US4811305A (en) | 1989-03-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |