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DE3582036D1 - Integrierbarer mikrowellenbipolartransistor und verfahren zu dessen herstellung. - Google Patents

Integrierbarer mikrowellenbipolartransistor und verfahren zu dessen herstellung.

Info

Publication number
DE3582036D1
DE3582036D1 DE8585402492T DE3582036T DE3582036D1 DE 3582036 D1 DE3582036 D1 DE 3582036D1 DE 8585402492 T DE8585402492 T DE 8585402492T DE 3582036 T DE3582036 T DE 3582036T DE 3582036 D1 DE3582036 D1 DE 3582036D1
Authority
DE
Germany
Prior art keywords
integratable
production
bipolar transistor
microwave bipolar
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585402492T
Other languages
English (en)
Inventor
Anatoly Feygenson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
SGS Thomson Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics Inc
Application granted granted Critical
Publication of DE3582036D1 publication Critical patent/DE3582036D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H10P14/24—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H10D10/054—Forming extrinsic base regions on silicon substrate after insulating device isolation in vertical BJTs having single crystalline emitter, collector or base regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/311—Thin-film BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10P14/2905—
    • H10P14/3211—
    • H10P14/3238—
    • H10P14/3248—
    • H10P14/3256—
    • H10P14/3411—
    • H10P14/3458—
    • H10P14/3802—
DE8585402492T 1984-12-18 1985-12-13 Integrierbarer mikrowellenbipolartransistor und verfahren zu dessen herstellung. Expired - Lifetime DE3582036D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/683,152 US4651410A (en) 1984-12-18 1984-12-18 Method of fabricating regions of a bipolar microwave integratable transistor

Publications (1)

Publication Number Publication Date
DE3582036D1 true DE3582036D1 (de) 1991-04-11

Family

ID=24742786

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585402492T Expired - Lifetime DE3582036D1 (de) 1984-12-18 1985-12-13 Integrierbarer mikrowellenbipolartransistor und verfahren zu dessen herstellung.

Country Status (3)

Country Link
US (1) US4651410A (de)
EP (1) EP0186578B1 (de)
DE (1) DE3582036D1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0214802B1 (de) * 1985-08-26 1991-06-05 Matsushita Electric Industrial Co., Ltd. Halbleiterbauelement mit einem abrupten Übergang und Verfahren zu seiner Herstellung mittels Epitaxie
JPS6445166A (en) * 1987-08-14 1989-02-17 Toshiba Corp Manufacture of semiconductor device
JP2798769B2 (ja) * 1990-02-22 1998-09-17 三洋電機株式会社 薄膜トランジスタの製造方法
US5252143A (en) * 1990-10-15 1993-10-12 Hewlett-Packard Company Bipolar transistor structure with reduced collector-to-substrate capacitance
US5866461A (en) * 1990-12-30 1999-02-02 Stmicroelectronics S.R.L. Method for forming an integrated emitter switching configuration using bipolar transistors
JPH04261026A (ja) * 1991-01-08 1992-09-17 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5266504A (en) * 1992-03-26 1993-11-30 International Business Machines Corporation Low temperature emitter process for high performance bipolar devices
EP0590804B1 (de) * 1992-09-03 1997-02-05 STMicroelectronics, Inc. Vertikal isolierter, monolithischer Hochleistungsbipolartransistor mit Topkollektor
US6468871B1 (en) * 2000-11-07 2002-10-22 National Semiconductor Corporation Method of forming bipolar transistor salicided emitter using selective laser annealing
DE102004038699A1 (de) * 2004-08-10 2006-02-23 Atmel Germany Gmbh Kaskode, Kaskodenschaltung und Verfahren zur vertikalen Integration von zwei Bipolartransistoren zu einer Kaskodenanordnung
DE102005009725A1 (de) * 2005-03-03 2006-09-07 Atmel Germany Gmbh Verfahren zur Integration von zwei Bipolartransistoren in einen Halbleiterkörper, Halbleiteranordnung in einem Halbleiterkörper und Kaskodenschaltung
US7604819B2 (en) * 2006-05-26 2009-10-20 Z-Medica Corporation Clay-based hemostatic agents and devices for the delivery thereof
US11510418B2 (en) 2017-07-24 2022-11-29 Upfield Europe B.V. Process for mixing liquid edible oil and a melted edible fat

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5539677A (en) * 1978-09-14 1980-03-19 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device and its manufacturing
JPS55130176A (en) * 1979-03-30 1980-10-08 Hitachi Ltd Field effect semiconductor element and method of fabricating the same
US4269631A (en) * 1980-01-14 1981-05-26 International Business Machines Corporation Selective epitaxy method using laser annealing for making filamentary transistors
US4381201A (en) * 1980-03-11 1983-04-26 Fujitsu Limited Method for production of semiconductor devices
JPS56135969A (en) * 1980-03-27 1981-10-23 Fujitsu Ltd Manufacture of semiconductor device
US4487639A (en) * 1980-09-26 1984-12-11 Texas Instruments Incorporated Localized epitaxy for VLSI devices
JPS57211267A (en) * 1981-06-22 1982-12-25 Toshiba Corp Semiconductor device and manufacture thereof
EP0073487B1 (de) * 1981-08-31 1988-07-20 Kabushiki Kaisha Toshiba Verfahren zur Herstellung einer dreidimensionalen Halbleitervorrichtung
US4489478A (en) * 1981-09-29 1984-12-25 Fujitsu Limited Process for producing a three-dimensional semiconductor device
JPS5873156A (ja) * 1981-10-28 1983-05-02 Hitachi Ltd 半導体装置
JPS58164219A (ja) * 1982-03-25 1983-09-29 Agency Of Ind Science & Technol 積層型半導体装置の製造方法
US4546539A (en) * 1982-12-08 1985-10-15 Harris Corporation I2 L Structure and fabrication process compatible with high voltage bipolar transistors
FR2547954B1 (fr) * 1983-06-21 1985-10-25 Efcis Procede de fabrication de composants semi-conducteurs isoles dans une plaquette semi-conductrice
US4523370A (en) * 1983-12-05 1985-06-18 Ncr Corporation Process for fabricating a bipolar transistor with a thin base and an abrupt base-collector junction

Also Published As

Publication number Publication date
EP0186578A2 (de) 1986-07-02
EP0186578A3 (en) 1988-01-07
EP0186578B1 (de) 1991-03-06
US4651410A (en) 1987-03-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SGS-THOMSON MICROELECTRONICS INC. (N.D.GES.DES STA

8339 Ceased/non-payment of the annual fee