DE3275682D1 - Semiconductor processing - Google Patents

Semiconductor processing

Info

Publication number: DE3275682D1
Authority: DE; Germany
Prior art keywords: semiconductor processing; semiconductor; processing
Prior art date: 1981-09-17
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

DE8282304869T

Other languages

English (en)

Inventor

Peter Denis Scovell

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

TDK Micronas GmbH

ITT Inc

Original Assignee

Deutsche ITT Industries GmbH

ITT Industries Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-09-17

Filing date

1982-09-15

Publication date

1987-04-16

1982-09-15 Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH

1987-04-16 Application granted granted Critical

1987-04-16 Publication of DE3275682D1 publication Critical patent/DE3275682D1/de

Status Expired legal-status Critical Current

Classifications

- H10P72/0436—
- H10P95/90—

DE8282304869T 1981-09-17 1982-09-15 Semiconductor processing Expired DE3275682D1 (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
GB08128127A GB2106709B (en)	1981-09-17	1981-09-17	Semiconductor processing

Publications (1)

Publication Number	Publication Date
DE3275682D1 true DE3275682D1 (en)	1987-04-16

Family

ID=10524568

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8282304869T Expired DE3275682D1 (en)	1981-09-17	1982-09-15	Semiconductor processing

Country Status (5)

Country	Link
US (2)	US4490183A (de)
EP (1)	EP0075439B1 (de)
JP (1)	JPS5861635A (de)
DE (1)	DE3275682D1 (de)
GB (1)	GB2106709B (de)

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JPS5922323A (ja) *	1982-07-28	1984-02-04	Fujitsu Ltd	半導体装置の製造方法
JPH0669027B2 (ja) *	1983-02-21	1994-08-31	株式会社日立製作所	半導体ウエハの薄膜形成方法
GB8504725D0 (en) *	1985-02-23	1985-03-27	Standard Telephones Cables Ltd	Integrated circuits
GB8507601D0 (en) *	1985-03-23	1985-05-01	Standard Telephones Cables Ltd	Integrated circuits
US5380702A (en) *	1987-07-17	1995-01-10	Henty; David L.	Method for texturing high temperature superconductors
US4931424A (en) *	1987-09-04	1990-06-05	Henty David L	Method for formation of high temperature superconductor films with reduced substrate heating
US5099096A (en) *	1990-04-05	1992-03-24	Martin Marietta Energy Systems, Inc.	Microwave furnace having microwave compatible dilatometer
US5154779A (en) *	1990-04-20	1992-10-13	Martin Marietta Energy Systems, Inc.	Method of nitriding, carburizing, or oxidizing refractory metal articles using microwaves
US5108670A (en) *	1990-04-20	1992-04-28	Martin Marietta Energy Systems, Inc.	Process for making a titanium diboride-chromium diboride-yttrium titanium oxide ceramic composition
US5164130A (en) *	1990-04-20	1992-11-17	Martin Marietta Energy Systems, Inc.	Method of sintering ceramic materials
JPH05506066A (ja) *	1990-04-20	1993-09-02	マーチン・マリエッタ・エナジー・システムズ・インク	耐熱性金属物品の窒化方法
US5013694A (en) *	1990-04-20	1991-05-07	Martin Marietta Energy Systems, Inc.	Titanium diboride-chromium diboride-yttrium titanium oxide ceramic composition and a process for making the same
FR2670950B1 (fr) *	1990-12-20	1993-04-16	Motorola Semiconducteurs	Procede et appareil pour le traitement de recuit des dispositifs a semiconducteur.
US5519193A (en) *	1992-10-27	1996-05-21	International Business Machines Corporation	Method and apparatus for stressing, burning in and reducing leakage current of electronic devices using microwave radiation
US5707466A (en) *	1995-03-31	1998-01-13	California Institute Of Technology	Method and apparatus for selectively annealing heterostructures using microwave
US5728310A (en) *	1995-08-02	1998-03-17	Forward Systems Automation	Microwave waste sterilizer and method of use
US5750968A (en) *	1995-06-30	1998-05-12	Lambda Technologies, Inc.	System and apparatus for reducing arcing and localized heating during microwave processing
US6051483A (en) *	1996-11-12	2000-04-18	International Business Machines Corporation	Formation of ultra-shallow semiconductor junction using microwave annealing
US6078035A (en) *	1995-12-22	2000-06-20	Lucent Technologies Inc.	Integrated circuit processing utilizing microwave radiation
KR100197157B1 (ko) *	1996-07-16	1999-06-15	박원훈	마이크로파를 이용한 강유전, 고유전, 전왜, 반도성, 또는 전도성 세라믹 박막의 급속 열처리 방법
US6103812A (en) *	1997-11-06	2000-08-15	Lambda Technologies, Inc.	Microwave curable adhesive
KR100481039B1 (ko)	1997-12-31	2005-05-16	삼성전자주식회사	마이크로웨이브를사용한박막형성장치및그방법
US7026229B2 (en) *	2001-11-28	2006-04-11	Vartan Semiconductor Equipment Associates, Inc.	Athermal annealing with rapid thermal annealing system and method
US20030160233A1 (en) *	2002-02-28	2003-08-28	Rendon Michael J.	Method of forming a semiconductor device having an energy absorbing layer and structure thereof
DE10229642B4 (de) *	2002-07-02	2007-03-22	Infineon Technologies Ag	Verfahren zum lokalen Erhitzen eines in einem Halbleitersubstrat angeordneten vergrabenen Bereichs
US7547647B2 (en) *	2004-07-06	2009-06-16	Hewlett-Packard Development Company, L.P.	Method of making a structure
JP2011035371A (ja) *	2009-07-07	2011-02-17	Toshiba Corp	半導体装置の製造方法及び半導体製造装置
US9988713B2 (en)	2013-03-12	2018-06-05	Arizona Board Of Regents On Behalf Of Arizona State University	Thin film devices and methods for preparing thin film devices
US9559249B2 (en)	2014-07-22	2017-01-31	Arizona Board Of Regents	Microwave-annealed indium gallium zinc oxide films and methods of making the same
CN106406210A (zh) *	2016-08-24	2017-02-15	苏州哈度软件有限公司	一种电解槽电气设备控制系统
JP6736436B2 (ja)	2016-09-16	2020-08-05	株式会社東芝	二次電池、電池パック及び車両
CN117936420A (zh) *	2017-11-11	2024-04-26	微材料有限责任公司	用于高压处理腔室的气体输送系统

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* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2480682A (en) *	1946-09-21	1949-08-30	Raytheon Mfg Co	Microwave heating apparatus using circularly polarized horn
US3261959A (en) *	1962-02-20	1966-07-19	F H Peavey & Company	Apparatus for treatment of ore
US3276138A (en) *	1962-09-21	1966-10-04	Miwag Mikrowellen Ag	Microwave drying apparatus
US3551090A (en) *	1968-07-29	1970-12-29	Robert C Brumfield	Microwave reactor and process for asepsis
US3718082A (en) *	1971-04-20	1973-02-27	S Lipoma	Apparatus for continuous electromagnetic sterilization
US4151008A (en) *	1974-11-15	1979-04-24	Spire Corporation	Method involving pulsed light processing of semiconductor devices
US4023004A (en) *	1975-07-16	1977-05-10	Litton Systems, Inc.	Microwave oven power supply and oscillator therefor
JPS5214370A (en) *	1975-07-25	1977-02-03	Hitachi Ltd	Baking device
FR2371226A1 (fr) *	1976-11-17	1978-06-16	Olivier Jean	Applicateur pour soumettre une matiere a des ondes
SE412504B (sv) *	1977-04-07	1980-03-03	Inst For Mikrovagsteknik Vid T	Sett och anordning for att medelst mikrovagsenergi astadkomma en i huvudsak likformig uppvermning
US4140887A (en) *	1977-05-09	1979-02-20	Special Metals Corporation	Method for microwave heating
FR2394173A1 (fr) *	1977-06-06	1979-01-05	Thomson Csf	Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede
US4181538A (en) *	1978-09-26	1980-01-01	The United States Of America As Represented By The United States Department Of Energy	Method for making defect-free zone by laser-annealing of doped silicon
US4168998A (en) *	1978-12-06	1979-09-25	Mitsubishi Monsanto Chemical Co.	Process for manufacturing a vapor phase epitaxial wafer of compound semiconductor without causing breaking of wafer by utilizing a pre-coating of carbonaceous powder
JPS5845177B2 (ja) *	1979-03-09	1983-10-07	富士通株式会社	半導体表面絶縁膜の形成法
US4273950A (en) *	1979-05-29	1981-06-16	Photowatt International, Inc.	Solar cell and fabrication thereof using microwaves
US4324965A (en) *	1979-07-25	1982-04-13	Hermann Berstorff Maschinenbau Gmbh	Microwave heating method and apparatus including adjustable tuning members
US4314128A (en) *	1980-01-28	1982-02-02	Photowatt International, Inc.	Silicon growth technique and apparatus using controlled microwave heating
US4303455A (en) *	1980-03-14	1981-12-01	Rockwell International Corporation	Low temperature microwave annealing of semiconductor devices
CA1159012A (en) *	1980-05-02	1983-12-20	Seitaro Matsuo	Plasma deposition apparatus
JPS5782955A (en) *	1980-11-12	1982-05-24	Hitachi Ltd	Microwave plasma generating apparatus
JPS58177469A (ja) *	1982-04-09	1983-10-18	Fujitsu Ltd	半導体基板の加熱方法及び加熱装置

1981
- 1981-09-17 GB GB08128127A patent/GB2106709B/en not_active Expired
1982
- 1982-08-31 US US06/413,327 patent/US4490183A/en not_active Expired - Fee Related
- 1982-09-14 JP JP57159039A patent/JPS5861635A/ja active Pending
- 1982-09-15 DE DE8282304869T patent/DE3275682D1/de not_active Expired
- 1982-09-15 EP EP82304869A patent/EP0075439B1/de not_active Expired
1986
- 1986-06-18 US US06/876,306 patent/US4683363A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
EP0075439B1 (de)	1987-03-11
EP0075439A3 (en)	1983-12-14
US4683363A (en)	1987-07-28
GB2106709B (en)	1986-11-12
GB2106709A (en)	1983-04-13
EP0075439A2 (de)	1983-03-30
US4490183A (en)	1984-12-25
JPS5861635A (ja)	1983-04-12

Publication	Publication Date	Title
GB2106709B (en)	1986-11-12	Semiconductor processing
GB2075921B (en)	1984-02-08	Processing semiconductor wafers
DE3277268D1 (en)	1987-10-15	Chip-array-constructed semiconductor device
IE821157L (en)	1982-11-15	Semiconductor manufacture
DE3276920D1 (en)	1987-09-10	Semiconductor device
EP0072221A3 (en)	1984-08-01	Improved semiconductor device
JPS57170546A (en)	1982-10-20	Semiconductor element
JPS57154879A (en)	1982-09-24	Semiconductor device
JPS57211773A (en)	1982-12-25	Semiconductor structure
GB2033355B (en)	1982-05-06	Semiconductor processing
KR910001908B1 (en)	1991-03-30	Semiconductor device
JPS57143860A (en)	1982-09-06	Semiconductor device
GB2097585B (en)	1985-02-13	Semiconductor device
MY8700865A (en)	1987-12-31	Soap processing
JPS57191752A (en)	1982-11-25	Work processing
JPS57198643A (en)	1982-12-06	Semiconductor substrate
JPS57153442A (en)	1982-09-22	Semiconductor device
GB8300403D0 (en)	1983-02-09	Semiconductor arrangement
EP0076495A3 (en)	1984-12-05	Photo-detective semiconductor device
GB2095471B (en)	1985-08-21	Semiconductor device
MY8700941A (en)	1987-12-31	Soap processing
DE3275613D1 (en)	1987-04-09	Semiconductor circuit
GB2095907B (en)	1985-05-30	Semiconductor device
IE821143L (en)	1982-11-12	Semiconductor device
MY8700909A (en)	1987-12-31	Soap processing

Legal Events

Date	Code	Title	Description
1988-04-14	8364	No opposition during term of opposition
1988-09-15	8339	Ceased/non-payment of the annual fee