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DE19681602T1 - Verfahren zum Entfernen von Metall - Google Patents

Verfahren zum Entfernen von Metall

Info

Publication number
DE19681602T1
DE19681602T1 DE19681602T DE19681602T DE19681602T1 DE 19681602 T1 DE19681602 T1 DE 19681602T1 DE 19681602 T DE19681602 T DE 19681602T DE 19681602 T DE19681602 T DE 19681602T DE 19681602 T1 DE19681602 T1 DE 19681602T1
Authority
DE
Germany
Prior art keywords
removing metal
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19681602T
Other languages
English (en)
Inventor
Herbert H Sawin
Jane P Chang
Andrew Scott Lawing
Zhe Zhang
Han Xu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Massachusetts Institute of Technology
Original Assignee
Massachusetts Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Institute of Technology filed Critical Massachusetts Institute of Technology
Publication of DE19681602T1 publication Critical patent/DE19681602T1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H10P70/12—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H10D64/011—
    • H10P50/267—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE19681602T 1995-10-19 1996-10-18 Verfahren zum Entfernen von Metall Withdrawn DE19681602T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US562295P 1995-10-19 1995-10-19
PCT/US1996/016731 WO1997015069A1 (en) 1995-10-19 1996-10-18 Metals removal process

Publications (1)

Publication Number Publication Date
DE19681602T1 true DE19681602T1 (de) 1998-11-26

Family

ID=21716831

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19681602T Withdrawn DE19681602T1 (de) 1995-10-19 1996-10-18 Verfahren zum Entfernen von Metall

Country Status (5)

Country Link
US (1) US6083413A (de)
JP (1) JPH11513846A (de)
DE (1) DE19681602T1 (de)
GB (1) GB2322235B (de)
WO (1) WO1997015069A1 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
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US6107166A (en) * 1997-08-29 2000-08-22 Fsi International, Inc. Vapor phase cleaning of alkali and alkaline earth metals
US6042654A (en) * 1998-01-13 2000-03-28 Applied Materials, Inc. Method of cleaning CVD cold-wall chamber and exhaust lines
US6284006B1 (en) * 1999-11-15 2001-09-04 Fsi International, Inc. Processing apparatus for microelectronic devices in which polymeric bellows are used to help accomplish substrate transport inside of the apparatus
US6514866B2 (en) * 2001-01-12 2003-02-04 North Carolina State University Chemically enhanced focused ion beam micro-machining of copper
US6730237B2 (en) * 2001-06-22 2004-05-04 International Business Machines Corporation Focused ion beam process for removal of copper
RU2217389C2 (ru) * 2001-12-27 2003-11-27 Ивановский государственный химико-технологический университет Способ извлечения ионов тяжелых металлов из водных растворов
JP4037770B2 (ja) 2003-02-10 2008-01-23 株式会社東芝 半導体装置の製造方法
DE10332295B4 (de) * 2003-07-16 2005-09-01 Infineon Technologies Ag Verfahren zur Entfernung von Metallspuren aus festem Silizium
US20060196525A1 (en) * 2005-03-03 2006-09-07 Vrtis Raymond N Method for removing a residue from a chamber
US20100062602A1 (en) * 2005-04-28 2010-03-11 Phyzchemix Corporation Etching method, method for producing dielectric film of low dielectric constant, method for producing porous member, etching system and thin film forming equipment
US7501349B2 (en) * 2006-03-31 2009-03-10 Tokyo Electron Limited Sequential oxide removal using fluorine and hydrogen
US20110056513A1 (en) * 2008-06-05 2011-03-10 Axel Hombach Method for treating surfaces, lamp for said method, and irradiation system having said lamp
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9136794B2 (en) 2011-06-22 2015-09-15 Research Triangle Institute, International Bipolar microelectronic device
US9698386B2 (en) 2012-04-13 2017-07-04 Oti Lumionics Inc. Functionalization of a substrate
US8853070B2 (en) * 2012-04-13 2014-10-07 Oti Lumionics Inc. Functionalization of a substrate
US9257638B2 (en) * 2014-03-27 2016-02-09 Lam Research Corporation Method to etch non-volatile metal materials
US9576811B2 (en) 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
US9806252B2 (en) 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US10229837B2 (en) 2016-02-04 2019-03-12 Lam Research Corporation Control of directionality in atomic layer etching
US10727073B2 (en) 2016-02-04 2020-07-28 Lam Research Corporation Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
JP6546872B2 (ja) * 2016-04-07 2019-07-17 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
JP7053991B2 (ja) * 2017-03-28 2022-04-13 セントラル硝子株式会社 ドライエッチング方法、半導体素子の製造方法及びチャンバークリーニング方法
US10559461B2 (en) 2017-04-19 2020-02-11 Lam Research Corporation Selective deposition with atomic layer etch reset
US10832909B2 (en) 2017-04-24 2020-11-10 Lam Research Corporation Atomic layer etch, reactive precursors and energetic sources for patterning applications
KR20240029787A (ko) 2018-03-30 2024-03-06 램 리써치 코포레이션 내화성 금속들 및 다른 고 표면 결합 에너지 재료들의 원자 층 에칭 및 평활화 (smoothing)
EP3971322B1 (de) * 2019-05-15 2025-06-04 Resonac Corporation Verfahren zur entfernung von metallen und verfahren zur herstellung eines halbleiterelements
CN113950735A (zh) * 2019-07-18 2022-01-18 东京毅力科创株式会社 具有可控金属蚀刻选择性的气相蚀刻
CN116177550B (zh) * 2023-03-09 2024-02-27 浙江大学 一种硅纳米材料的表面钝化方法及用途

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3511727A (en) * 1967-05-08 1970-05-12 Motorola Inc Vapor phase etching and polishing of semiconductors
US4498953A (en) * 1983-07-27 1985-02-12 At&T Bell Laboratories Etching techniques
JPS61174639A (ja) * 1985-01-28 1986-08-06 Semiconductor Energy Lab Co Ltd 光エツチング方法
JP2757546B2 (ja) * 1990-08-27 1998-05-25 日本電気株式会社 Ｆｅを含む物質のエッチング方法およびエッチング装置
US5318668A (en) * 1991-10-24 1994-06-07 Matsushita Electric Industrial Co., Ltd. Dry etching method
JPH07109825B2 (ja) * 1992-01-13 1995-11-22 富士通株式会社 半導体基板表面もしくは薄膜表面のドライ洗浄法
US5380370A (en) * 1993-04-30 1995-01-10 Tokyo Electron Limited Method of cleaning reaction tube
US5350480A (en) * 1993-07-23 1994-09-27 Aspect International, Inc. Surface cleaning and conditioning using hot neutral gas beam array
US5814156A (en) * 1993-09-08 1998-09-29 Uvtech Systems Inc. Photoreactive surface cleaning
US5431774A (en) * 1993-11-30 1995-07-11 Texas Instruments Incorporated Copper etching
US5534107A (en) * 1994-06-14 1996-07-09 Fsi International UV-enhanced dry stripping of silicon nitride films

Also Published As

Publication number Publication date
GB2322235A (en) 1998-08-19
GB9807268D0 (en) 1998-06-03
WO1997015069A1 (en) 1997-04-24
JPH11513846A (ja) 1999-11-24
GB2322235B (en) 2000-09-27
US6083413A (en) 2000-07-04

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Legal Events

Date Code Title Description
8141 Disposal/no request for examination