DE1672315U - RECTIFIER MADE FROM A SEMICONDUCTOR MATERIAL THAT CAN BE LOADED WITH A HIGH CURRENT DENSITY. - Google Patents

Description

Gm 24c11c1953

Rectifiers made of a semiconductor material that are loaded with a glad current density

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There are repeated in recent times! Brought in Vorsohlag dry rectifiers, allowing au transport their electrical properties to a much higher current density than üie hitherto customary Plaohengleiciirichter, S ₀ B ₀ with selenium or cuprous oxide as semiconductors ₉ Essentially are rectifiers from germanium However, these rectifiers have the difficulty that they have to be cooled very carefully in order to retain their electrical data during operation therefore heat accumulations are particularly to be feared «,

The present fire now relates to a rectifier made of a semiconductor material, in particular one that can be loaded with a high current density, for example with germanium or silicon as the semiconductor, which differs from the previously known one in that several small rectifiers, eiaheiten are arranged on a common base plate _o JLrt in this manner it is achieved that in addition to, removal of heat also takes place by convection or increased removal of heat by thermal conduction *

It is particularly advantageous if the base plate serves as a carrier electrode at the same time, since in this case a further heat transfer to the cooling surface formed by the base plate = before saved mrd ₀

Depending on the intended use, can the rectifier subtleties be arranged in this way _? that their counterelectrode ^ · .Each of them are provided with a supply line, or that the counterelectrodes are formed from a common cover plate, which also serves as a power supply »Here, too, the cover plate has the purpose of increasing the heat conduction ^ to discharge «,. .

5859 Gm -.2 *

In order to maintain or improve the blocking capacity of the rectifier elements , it is necessary to solder the semiconductor onto the iEi-agerelectrode with a defect line ~ b.eT- in the semiconductor! Material when using germanium, preferably -with indium, - although the hearing can be increased, yiexm. . the supply line or the cover plate with the semiconducting «= ^·: .. i; he Curtain About Schug line forming material, preferably tin ~ or antimony * on the semiconductor soldered nyirde Umgeireiirt i-st it - '--günetigi when ^ e #i; i "tj-tes dee germanium to use a J ^ teTial . " that causes overcuBsleitung, for example tin or. Anti · = mon _f -when the supply or the cover plates with a material that calls into the semiconductor defective conduction ^ "For example .Indium, resolved -beenzU". - ■ - -

The subject of the hiring is only limited to simple equivalents, but is also suitable for use with the addition of control elements and the like. ^ controllable Gleibnricliterni Eristallträgerlcem or! ΊΜοηβη «= ⁵ transistors _{f in} general for use in controllable, electrically asymmetrically conductive systems«

In Z ₀ T _{0, the} Moors show a schematic representation of an exemplary embodiment of a rectifier made from a semiconductor

material according to the 'firing _o "-'..". "" ■■

Are Xn "IGT, 1, 1 is a base _plate? To which the from the Trä-.gerelektrQden 2 and the semiconductors are soldered 5 existing rectifier = units provided" in turn connected to individual leads A- _c

In Pigc 2 the semiconductors 3 lie directly on the base plate 1 and are covered by counter electrodes 5 with the cover plate 6, it can be seen that in these two embodiments the base plate is once the base plate and the other these and those Deek plate contribute to cooling through heat dissipation, In the arrangement in Fig. 1, the loosened structure improves the heat radiation, while in the arrangement according to 'T ± g _o 2 _t, especially in the case of a vertical structure, additional cooling is provided by the chimney effect -entrance _o ":

Claims (1)

5859 Gm claims for protection Rectifiers, for example with germanium or silicon as semiconductor, characterized in that several small equal «=? judge units are arranged on a common base plate " Rectifier according to Claim 1, characterized in that the base plate simultaneously served as a carrier electrode Rectifier according to Claim 1 or 2, characterized in that the counter electrodes of the rectifier units 3 each with themselves «Are provided in a supply line, or from a common cover plate are formed, which also served as a power supply A rectifier according to claim 2 or 3 with germanium as a semiconductor, characterized in that _t the semiconductor to the support electric ^ - with a de-causing defect in the semiconductor line mate rial * = ρ preferably indium, soldered isto A rectifier according to claim 2 or 3 with germanium as a semiconductor _t characterized in that the semiconductor on uie Irägerelek · = trode is soldered with an inducing in the semiconductor circuit on pushes MaterialJ ₅ preferably tin or antimony ^ _o Rectifier according to Claim 4, characterized in that the feed lines or the cover plates are coated with a material which causes over-bus lines in the semiconductor, preferably tin or antimony _? are soldered to the semiconductor o Rectifier according to claim 5? characterized in that the supply lines or the cover plates with an inducing in the semiconductor De "= fect line material, preferably indium _f .lötet on ge" = are ο Rectifier according to claim 1 or one of the following ^ thereby characterized by the addition of suitable control electrodes as a controllable rectifier, crystal amplifier -or surface transistor can be used