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DE1278002C2 - LUMINESCENT DIODE FROM GAAS AS BASIC MATERIAL - Google Patents

LUMINESCENT DIODE FROM GAAS AS BASIC MATERIAL

Info

Publication number
DE1278002C2
DE1278002C2 DE1966S0101435 DES0101435A DE1278002C2 DE 1278002 C2 DE1278002 C2 DE 1278002C2 DE 1966S0101435 DE1966S0101435 DE 1966S0101435 DE S0101435 A DES0101435 A DE S0101435A DE 1278002 C2 DE1278002 C2 DE 1278002C2
Authority
DE
Germany
Prior art keywords
gaas
conductive zone
zone
luminescent diode
basic material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1966S0101435
Other languages
German (de)
Other versions
DE1278002B (en
Inventor
Günter Dr.; Zschauer Karl-Heinz Dipl.-Phys.; 8000 München Winstel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DES101436A priority Critical patent/DE1257965B/en
Priority to DE1966S0101435 priority patent/DE1278002C2/en
Priority to NL6616658A priority patent/NL6616658A/xx
Priority to GB1311/67A priority patent/GB1156903A/en
Priority to AT28967A priority patent/AT266939B/en
Priority to CH43167A priority patent/CH459365A/en
Priority to FR90844A priority patent/FR1507827A/en
Priority to SE481/67A priority patent/SE323144B/xx
Priority to JP226967A priority patent/JPS5132076B1/ja
Publication of DE1278002B publication Critical patent/DE1278002B/en
Application granted granted Critical
Publication of DE1278002C2 publication Critical patent/DE1278002C2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/74—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing arsenic, antimony or bismuth
    • C09K11/7492—Arsenides; Nitrides; Phosphides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Led Devices (AREA)

Description

Die Erfindung betrifft eine Lumineszenzdiode nach dem Oberbegriff des Patentanspruchs.The invention relates to a light emitting diode according to the preamble of the patent claim.

Bekanntlich ist in einer A1MBV-Lumineszenzdiode die Photonenenergie in der η-leitenden Zone meist größer als in der p-leitenden Zone. Das bedeutet, daß im wesentlichen nur die in der p-leitenden Zone erzeugte Lumineszenzstrahlung durch die η-leitende Zone nach außen gelangen kann, ohne stark absorbiert zu werden. Bei üblichen Betriebstemperaturen sind die Absorptionsverluste aber noch so hoch, daß nur wenige Prozent der in der p-leitenden Zone erzeugten Lumineszenzstrahlung die η-leitende Zone durchdringen kann.It is known that in an A 1M B V luminescent diode the photon energy in the η-conducting zone is usually greater than in the p-conducting zone. This means that essentially only the luminescence radiation generated in the p-conductive zone can reach the outside through the η-conductive zone without being strongly absorbed. At normal operating temperatures, however, the absorption losses are still so high that only a few percent of the luminescence radiation generated in the p-conductive zone can penetrate the η-conductive zone.

Zur Verringerung der Absorptionsverluste in der η-leitenden Zone ist es bekannt (J. Appl. Phys., Bd. 36, Nr. 2, 1965, S. 460 bis 461), eine Lumineszenzdiode auf GaAs-GaP-Basis zu verwenden, deren Absorptionsverluste beim Durchgang der in der p-leitenden Zone der Diode entstandenen Lumineszenzstrahlung durch die η-leitende Zone dadurch vermindert sind, daß mittels kontinuierlicher Änderung der Zusammensetzung des halbleitenden Grundmaterials die η-leitende Zone einen mit zunehmendem Abstand von pn-Übergang wachsenden effektiven Bandabstand hat. Hierzu wird auf einem Substrat aus einer Ga(As-P)-Legierung eine GaAs-Schicht epitaktisch abgeschieden.To reduce absorption losses in the In the η-conductive zone, it is known (J. Appl. Phys., Vol. 36, No. 2, 1965, pp. 460 to 461) to have a light-emitting diode To use GaAs-GaP base, whose absorption losses when passing through in the p-type zone of the Diode resulting luminescence radiation are reduced by the η-conductive zone that by means of continuous change in the composition of the semiconducting base material, the η-conductive zone the effective band gap increases with increasing distance from the pn junction. This is done on a Substrate made of a Ga (As-P) alloy, a GaAs layer is deposited epitaxially.

Es ist außerdem bekannt, daß die Intensität der austretenden Strahlung noch dadurch merklich erhöht werden kann, daß man dem η-dotierten Teil der Diode an der Außengrenze eine solche Form, etwa Weierstraß-Geometrie, gibt, daß die Strahlung auf diese Grenzfläche so auftrifft, daß sie praktisch ohne Totalreflexionsverluste nach außen durchtreten kann.It is also known that the intensity of the exiting radiation is noticeably increased as a result can be that the η-doped part of the diode at the outer border has a shape such as Weierstrass geometry, gives that the radiation impinges on this interface in such a way that it is practically without Total reflection losses can pass through to the outside.

Aufgabe der vorliegenden Erfindung ist es, die Lichtausbeute der A1MBV-Lumineszendiode darüber hinaus noch dadurch zu erhöhen, daß die Absorptionsverluste an Lumineszenzstrahlung längs des Weges von ihrer Entstehung am pn-Übergang durch die η-Zone der Diode bis hin zur äußeren Grenzfläche möglichst vermieden werden.The object of the present invention is to further increase the luminous efficiency of the A 1M B V luminescent diode by reducing the absorption losses of luminescent radiation along the path from its formation at the pn junction through the η zone of the diode to the outer interface should be avoided if possible.

Diese Aufgabe wird erfindungsgemäß durch die im kennzeichnenden Teil des Patentanspruchs angegebenen Merkmale gelöst.According to the invention, this object is given by what is stated in the characterizing part of the patent claim Features solved.

In der p-leitenden Zone ist also ein Teil des Galliums durch Indium und ein Teil des Arsens durch Antimon ersetzt. Dadurch und durch die Gegendotierung mit Sn wird in der p-leitenden Zone der Bandabstand verringert, so daß infolge der sprunghaften Änderung der effektiven Bandbreite am pn-Übergang ein größerer Anteil der in dieser Zone erzeugten Lumineszenzstrahlung ohne Absorption die η-leitende Zone durchqueren kann.In the p-conducting zone, therefore, part of the gallium is made up of indium and part of the arsenic is made up of antimony replaced. As a result of this and the counter-doping with Sn, the band gap is established in the p-conductive zone reduced, so that due to the sudden change in the effective bandwidth at the pn junction, a larger one Share of the luminescence radiation generated in this zone cross the η-conductive zone without absorption can.

Claims (1)

Patentanspruch:Claim: Lumineszenzdiode aus GaAs als Grundmaterial, bei der die in der η-leitenden Zone auftretende Absorption der in der p-leitenden Zone erzeugten Lumineszenzstrahlung gering ist, dadurch gekennzeichnet, daß bei aus homogenen GaAs bestehender η-leitender Zone die p-leitende Zone aus mit Zn p-dotierten und Sn als Gegendotierung enthaltenden (Gai-rIn,-)(Asi-s Sb4) besteht, wobei r und 5 zwischen 0 und 1 liegende Werte sind und die Werte von r und s sowie die Gegendotierung so gewählt wird, daß am pn-Übergang eine sprunghafte Änderung des effektiven Bandabstands um mindestens die Halbwertsbreite des Lumineszenzbandes vorhanden ist.Luminescent diode made of GaAs as the base material, in which the absorption of the luminescence radiation generated in the p-conductive zone in the η-conductive zone is low, characterized in that in the η-conductive zone consisting of homogeneous GaAs, the p-conductive zone is made of Zn p-type and Sn as a counter-doping containing (Ga r, -) (ASI s Sb 4), wherein r and 5 lying between 0 and 1 values and the values of r and s and the counter-doping is selected so that at the pn junction there is a sudden change in the effective band gap by at least the half width of the luminescent band.
DE1966S0101435 1966-01-14 1966-01-14 LUMINESCENT DIODE FROM GAAS AS BASIC MATERIAL Expired DE1278002C2 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DES101436A DE1257965B (en) 1966-01-14 1966-01-14 AIIIBA light emitting diode, especially based on GaAs, with high light yield
DE1966S0101435 DE1278002C2 (en) 1966-01-14 1966-01-14 LUMINESCENT DIODE FROM GAAS AS BASIC MATERIAL
NL6616658A NL6616658A (en) 1966-01-14 1966-11-25
GB1311/67A GB1156903A (en) 1966-01-14 1967-01-10 Improvements in or relating to Luminescent Diodes
AT28967A AT266939B (en) 1966-01-14 1967-01-11 A <III> B <V> luminescent diode
CH43167A CH459365A (en) 1966-01-14 1967-01-12 AIIIBv light emitting diode
FR90844A FR1507827A (en) 1966-01-14 1967-01-12 Light emitting diode
SE481/67A SE323144B (en) 1966-01-14 1967-01-12
JP226967A JPS5132076B1 (en) 1966-01-14 1967-01-13

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES101436A DE1257965B (en) 1966-01-14 1966-01-14 AIIIBA light emitting diode, especially based on GaAs, with high light yield
DE1966S0101435 DE1278002C2 (en) 1966-01-14 1966-01-14 LUMINESCENT DIODE FROM GAAS AS BASIC MATERIAL

Publications (2)

Publication Number Publication Date
DE1278002B DE1278002B (en) 1968-09-19
DE1278002C2 true DE1278002C2 (en) 1977-11-03

Family

ID=25998341

Family Applications (2)

Application Number Title Priority Date Filing Date
DES101436A Pending DE1257965B (en) 1966-01-14 1966-01-14 AIIIBA light emitting diode, especially based on GaAs, with high light yield
DE1966S0101435 Expired DE1278002C2 (en) 1966-01-14 1966-01-14 LUMINESCENT DIODE FROM GAAS AS BASIC MATERIAL

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DES101436A Pending DE1257965B (en) 1966-01-14 1966-01-14 AIIIBA light emitting diode, especially based on GaAs, with high light yield

Country Status (7)

Country Link
JP (1) JPS5132076B1 (en)
CH (1) CH459365A (en)
DE (2) DE1257965B (en)
FR (1) FR1507827A (en)
GB (1) GB1156903A (en)
NL (1) NL6616658A (en)
SE (1) SE323144B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3758875A (en) * 1970-05-01 1973-09-11 Bell Telephone Labor Inc Double heterostructure junction lasers
GB8715211D0 (en) * 1987-06-29 1987-08-05 Secr Defence Lensed photo detector

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1416939A (en) * 1963-12-12 1965-11-05 Gen Electric Improvements in optical transmission processes of alloyed semiconductor light sources

Also Published As

Publication number Publication date
GB1156903A (en) 1969-07-02
DE1257965B (en) 1968-01-04
JPS5132076B1 (en) 1976-09-10
DE1278002B (en) 1968-09-19
FR1507827A (en) 1967-12-29
CH459365A (en) 1968-07-15
SE323144B (en) 1970-04-27
NL6616658A (en) 1967-07-17

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Legal Events

Date Code Title Description
E77 Valid patent as to the heymanns-index 1977
8339 Ceased/non-payment of the annual fee