DE1270695B - Semiconductor arrangement with a semiconductor body enclosed in a housing - Google Patents

Description

FEDERAL REPUBLIC OF GERMANY

GERMAN

PATENT OFFICE

EDITORIAL

Int. CL:

HOIl

German class: 21 g - 11/02

Number: 1 270 695

File number: P 12 70 695.5-33

Filing date: June 12, 1963

Opening day: June 20, 1968

The main patent application relates to a semiconductor arrangement with a semiconductor element enclosed in a housing, consisting of a disk-shaped, essentially monocrystalline semiconductor body and a metallic carrier plate which covers one flat side and is connected to it in a materially bonded manner and whose thermal expansion coefficient is adapted to the semiconductor body. According to the main patent application, the semiconductor element with a metal disc located on its other flat side is slidably clamped between a heat sink and another current-carrying metal body with a surface pressure of 100 to 500 kg / cm ² by means of a spring part located outside the current path.

The construction of a semiconductor device of this type requires a larger number of individual parts, which enclose and hold the semiconductor element. The invention relates to a further improvement such a semiconductor arrangement and creates a particularly compact design of the housing.

According to the invention, the semiconductor arrangement is further developed according to the main patent application, that a holding part pressing the metal disk is designed as part of the housing wall. Advantageous Such a holding part is made of a tensile and pressure-resistant ceramic material. That The holding part consists in particular of sintered aluminum oxide. The device according to the invention has the additional advantage that it can be assembled particularly easily.

In the drawing, an embodiment is shown, from which further advantages and details emerge from the invention.

The figure shows a capsule base 2, which can for example consist of copper and which serves as a heat sink. He is provided with a threaded bolt, with the help of which he is on further Cooling devices can be screwed on. A semiconductor element, in the present example a Rectifier is placed on the capsule base 2. It consists of a molybdenum disk 3, one Silicon wafer 4 and an upper alloy electrode 5. The lower alloy electrode, with their The aid of the silicon wafer 4 being alloyed to the molybdenum wafer 3 is not particularly indicated in the drawing.

Advantageously, the lower contact surface of the molybdenum disk 3 and the contact surface of the capsule base 2 are specially treated, e.g. B. by lapping according to the German Auslegeschrift 1 248 811. By lapping, a completely semiconductor device with one in a housing
enclosed semiconductor body

Addition to registration: S 74774 VIII c / 21 g -
Interpretation document 1263 190

Applicant:

Siemens Aktiengesellschaft, Berlin and Munich, 8520 Erlangen, Werner-von-Siemens-Str. 50

Named as inventor:

Dr.-Ing. Reimer Emeis, 8553 Ebermannstadt - -

created flat contact surface, which has a low roughness, whereby a good current and Heat transfer is guaranteed.

A silver foil 6 is expediently inserted between the molybdenum disk 3 and the capsule base 2, which, for example, can be 100 to 200 μm thick and which advantageously have a patterned surface having. For example, rolling a waffle pattern, similar to the knurling of knurled screws, to be imprinted. The silver foil can also be rolled out completely flat and then annealed and then z. B. be etched with the help of nitric acid. This results in a fine etched pattern on the surface, which is also particularly suitable, the transfer of electricity and heat to ensure.

Preferably, the pressure contact surfaces are formed so that at least one of these surfaces is roughened uniformly, such that its surface roughness has a value between 0.5 and 50 μ, and that each of the two contact surfaces is so flat that the mutual deviations of the averaged Area of a geometric plane is not greater than the surface roughness, ζ. Β. according to the Austrian patent specification 231 567.

On the surface of the contact electrode 5, which for example consists of a gold semiconductor eutectic, z. B. a gold-silicon eutectic, may exist, a stempeif-shaped part is attached, which is composed of a copper bolt 7 and a molybdenum plate 8. The molyb

809 560/394

Danish plate 8 can ζ. B. 2 to 3 mm thick and be soldered to the copper bolt 7 hard. Advantageous are the contact surfaces with which the molybdenum plate 8 and the contact electrode 5 touch each other, also lapped flat, whereby the required flatness and roughness can be achieved.

A bell-shaped housing part is put over the whole thing, which consists of various individual parts is composed. The core consists of a substantially cylindrical ceramic part 9 to which a lower metal part 10 and an upper metal part 11 are soldered. The ceramic part can be attached to the relevant Be metallized in a known manner before soldering. The metal part 11 is on Another metal part 12 with an H-shaped cross section is brazed on. For example, this can Metal part 12 made of copper, the metal part 11 made of an iron-nickel-cobalt alloy and the metal part 10 also consist of an iron-nickel-cobalt alloy. The ceramic part 9 is preferably made of sintered aluminum oxide, which has sufficient compressive and tensile strength so that the pressure the pressure contact connection can be supported.

A washer 13 made of iron, for example, and three disc springs are pushed onto the copper bolt 7 14, 15 and 16. In the ceramic part 9, which is offset at one point on the inside, there is a ring 17 made of a ductile material, e.g. B. silver or iron, inserted against which the spring 16 presses.

In the upper opening of the H-shaped part 12, a cable 18 is inserted and crimped connected to part 12. Also with the part 7, the part 12 is crimped after assembly connected from the side.

The metal part 10 is connected to the capsule base 2 by flanging in that an edge web 2 α is bent over the foot part of the metal part 10. The metal part 10 can also be connected to the capsule 2 by welding or brazing.

The entire semiconductor component enclosed in a housing preferably has a rotationally symmetrical structure, whereby the assembly is also made much easier.

Claims (4)

Patent claims: 1. Semiconductor arrangement with a semiconductor element enclosed in a housing, consisting of a disk-shaped, essentially monocrystalline semiconductor body and one of its flat sides, which is cohesively connected to the latter and whose thermal expansion coefficient is matched to the semiconductor body, consisting of a metallic carrier plate, the semiconductor element with one on the other Flat side metal disk between a heat sink and another current-carrying metal body with a surface pressure of 100 to 500 kg / cm ² by means of a spring part lying outside the current path is slidably clamped, according to patent application S 74774 VIII c / 21 g (German Auslegeschrift 1 263 190), characterized in that a metal disc (8) pressing holding part (9) is designed as part of the housing wall. 2. Semiconductor arrangement according to claim 1, characterized in that the holding part (9) trained part of the housing wall is deposited inside at one point. 3. Semiconductor arrangement according to claim 1 or 2, characterized in that the holding part (9) consists of tensile and pressure-resistant ceramic material. 4. Semiconductor arrangement according to claim 3, characterized in that the holding part (9) from sintered aluminum oxide. Considered publications:
U.S. Patent No. 2,712,619. 1 sheet of drawings 809 560/394 6.68 © Bundesdruckerei Berlin