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DE1170086B - Process for the production of a halogen-doped photo-semiconductor with a low tendency to age - Google Patents

Process for the production of a halogen-doped photo-semiconductor with a low tendency to age

Info

Publication number
DE1170086B
DE1170086B DED32413A DED0032413A DE1170086B DE 1170086 B DE1170086 B DE 1170086B DE D32413 A DED32413 A DE D32413A DE D0032413 A DED0032413 A DE D0032413A DE 1170086 B DE1170086 B DE 1170086B
Authority
DE
Germany
Prior art keywords
halogen
production
age
semiconductor
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DED32413A
Other languages
German (de)
Inventor
Dr Karl-Wolfgang Boeer
Wolfgang Borchardt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Berlin Brandenburg Academy of Sciences and Humanities
Original Assignee
Berlin Brandenburg Academy of Sciences and Humanities
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Berlin Brandenburg Academy of Sciences and Humanities filed Critical Berlin Brandenburg Academy of Sciences and Humanities
Priority to DED32413A priority Critical patent/DE1170086B/en
Publication of DE1170086B publication Critical patent/DE1170086B/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass

Landscapes

  • Photoreceptors In Electrophotography (AREA)

Description

Verfahren zur Herstellung eines mit Halogen dotierten Photohalbleiters mit geringer Alterungsneigung Die Erfindung betrifft ein Verfahren zur Herstellung eines mit Halogen dotierten Photohalbleiters mit geringer Alterungsneigung.Process for the production of a halogen-doped photosemiconductor with a low tendency to age The invention relates to a method for production a halogen-doped photo semiconductor with a low tendency to age.

Es ist bekannt, daß aus photohalbleitenden Substanzen hergestellte Photowiderstände einer Alterung unterliegen, die durch photochemische Reaktionen ausgelöst wird und von Zelle zu Zelle verschieden sein kann. Die Folge ist, daß ein großer Teil der hergestellten Photowiderstände wegen zu hoher Alterung nicht verwendet werden kann bzw. nach einer gewissen Zeit ausgewechselt werden muß, weil die charakteristischen Werte nicht mehr im geforderten Bereich liegen.It is known that made of photo-semiconductor substances Photoresistors are subject to aging caused by photochemical reactions is triggered and can vary from cell to cell. The consequence is that a large part of the photoresistors produced are not due to excessive aging can be used or must be replaced after a certain time because the characteristic values are no longer in the required range.

Der Erfindung liegt die Aufgabe zugrunde, Photohalbleiter mit geringer Alterungsneigung herzustellen. Erfindungsgemäß werden Photohalbleiter mit geringer Alterungsneigung hergestellt, indem als Dotierungssubstanz elementares Halogen verwendet wird. Dadurch werden die die Alterung bedingenden photochemischen Reaktionen verhindert und die gewünschte Konstanz der Betriebswerte gewährleistet.The invention is based on the object of photo semiconductors with low To produce aging tendency. According to the invention, photo semiconductors are less Aging tendency produced by using elemental halogen as a doping substance will. This prevents the photochemical reactions that cause aging and guarantees the desired constancy of the operating values.

An Hand eines Ausführungsbeispieles sei das Verfahren nach der Erfindung näher erläutert.The method according to the invention is based on an exemplary embodiment explained in more detail.

Mit Chlor dotierte CdS-Photowiderstände mit geringer Alterungsneigung werden unter Bedingungen bekannter Art mit elementarem Chlor dotiert. Die Kristalle zeigen nach einer derartigen Dotierung bis zu Betriebstemperaturen von 150° C keinerlei und bei höheren Temperaturen nur geringe Alterungserscheinungen. Die maximale Empfindlichkeitsänderung bei Temperaturen oberhalb 150° C überschreitet dabei nicht den Faktor 2,5.CdS photoresistors doped with chlorine with low aging tendency are doped with elemental chlorine under known conditions. The crystals do not show any after such doping up to operating temperatures of 150 ° C and only slight signs of aging at higher temperatures. The maximum change in sensitivity at temperatures above 150 ° C does not exceed a factor of 2.5.

Der Vorteil der mit elementaren Halogenatomen dotierten Photowiderstände zeigt sich darin, daß die Lebensdauer nicht mehr durch photochemische Reaktionen im Kristall bestimmt wird, sondern bei guter Kontaktierung praktisch unbegrenzt ist.The advantage of photoresistors doped with elementary halogen atoms shows that the lifetime is no longer due to photochemical reactions is determined in the crystal, but with good contact practically unlimited is.

Claims (1)

Patentanspruch: Verfahren zur Herstellung eines mit Halogen dotierten Photohalbleiters mit geringer Alterungsneigung, dadurch gekennzeichnet, daß als Dotierungssubstanz elementares Halogen verwendet wird. In Betracht gezogene Druckschriften: Deutsche Patentschriften Nr. 868199, 915 718; Chemisches Zentralblatt (1959), S. 13/14; Physikalische Berichte (1958), S. 2250/2251; Physical Review (1958), S. 1040 bis 1049.Claim: Process for the production of a halogen-doped one Photo semiconductor with low aging tendency, characterized in that as Doping substance elemental halogen is used. Considered publications: German Patent Nos. 868199, 915 718; Chemisches Zentralblatt (1959), p. 13/14; Physical reports (1958), pp. 2250/2251; Physical Review (1958), p. 1040 to 1049.
DED32413A 1960-01-23 1960-01-23 Process for the production of a halogen-doped photo-semiconductor with a low tendency to age Pending DE1170086B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DED32413A DE1170086B (en) 1960-01-23 1960-01-23 Process for the production of a halogen-doped photo-semiconductor with a low tendency to age

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DED32413A DE1170086B (en) 1960-01-23 1960-01-23 Process for the production of a halogen-doped photo-semiconductor with a low tendency to age

Publications (1)

Publication Number Publication Date
DE1170086B true DE1170086B (en) 1964-05-14

Family

ID=7041302

Family Applications (1)

Application Number Title Priority Date Filing Date
DED32413A Pending DE1170086B (en) 1960-01-23 1960-01-23 Process for the production of a halogen-doped photo-semiconductor with a low tendency to age

Country Status (1)

Country Link
DE (1) DE1170086B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE868199C (en) * 1951-05-05 1953-02-23 Fritz Dr Michelssen Electrically sensitive body
DE915718C (en) * 1930-11-22 1954-07-26 Siemens Ag Self-powered photocell, consisting of a semiconductor layer arranged between two electrodes

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE915718C (en) * 1930-11-22 1954-07-26 Siemens Ag Self-powered photocell, consisting of a semiconductor layer arranged between two electrodes
DE868199C (en) * 1951-05-05 1953-02-23 Fritz Dr Michelssen Electrically sensitive body

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