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DE102016200026B8 - wafer manufacturing process - Google Patents

wafer manufacturing process Download PDF

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Publication number
DE102016200026B8
DE102016200026B8 DE102016200026.8A DE102016200026A DE102016200026B8 DE 102016200026 B8 DE102016200026 B8 DE 102016200026B8 DE 102016200026 A DE102016200026 A DE 102016200026A DE 102016200026 B8 DE102016200026 B8 DE 102016200026B8
Authority
DE
Germany
Prior art keywords
manufacturing process
wafer manufacturing
wafer
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102016200026.8A
Other languages
German (de)
Other versions
DE102016200026A1 (en
DE102016200026B4 (en
Inventor
Kazuya Hirata
Kunimitsu Takahashi
Yoko Nishino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of DE102016200026A1 publication Critical patent/DE102016200026A1/en
Publication of DE102016200026B4 publication Critical patent/DE102016200026B4/en
Application granted granted Critical
Publication of DE102016200026B8 publication Critical patent/DE102016200026B8/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H10P52/00—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Laser Beam Processing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE102016200026.8A 2015-01-06 2016-01-05 wafer manufacturing process Active DE102016200026B8 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-001040 2015-01-06
JP2015001040A JP6391471B2 (en) 2015-01-06 2015-01-06 Wafer generation method

Publications (3)

Publication Number Publication Date
DE102016200026A1 DE102016200026A1 (en) 2016-07-07
DE102016200026B4 DE102016200026B4 (en) 2023-04-27
DE102016200026B8 true DE102016200026B8 (en) 2023-06-22

Family

ID=56133244

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102016200026.8A Active DE102016200026B8 (en) 2015-01-06 2016-01-05 wafer manufacturing process

Country Status (8)

Country Link
US (1) US9925619B2 (en)
JP (1) JP6391471B2 (en)
KR (1) KR102341604B1 (en)
CN (1) CN105750741B (en)
DE (1) DE102016200026B8 (en)
MY (1) MY177233A (en)
SG (1) SG10201510273SA (en)
TW (1) TWI662612B (en)

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JP6478821B2 (en) * 2015-06-05 2019-03-06 株式会社ディスコ Wafer generation method
JP6723877B2 (en) * 2016-08-29 2020-07-15 株式会社ディスコ Wafer generation method
JP6773506B2 (en) * 2016-09-29 2020-10-21 株式会社ディスコ Wafer generation method
JP6887722B2 (en) * 2016-10-25 2021-06-16 株式会社ディスコ Wafer processing method and cutting equipment
JP6773539B2 (en) * 2016-12-06 2020-10-21 株式会社ディスコ Wafer generation method
JP6858587B2 (en) * 2017-02-16 2021-04-14 株式会社ディスコ Wafer generation method
JP6858586B2 (en) * 2017-02-16 2021-04-14 株式会社ディスコ Wafer generation method
JP6904793B2 (en) * 2017-06-08 2021-07-21 株式会社ディスコ Wafer generator
DE112018003116T5 (en) 2017-06-19 2020-03-05 Rohm Co., Ltd. SEMICONDUCTOR COMPONENT PRODUCTION METHOD AND STRUCTURE WITH FIXED WAFER
JP6976745B2 (en) * 2017-06-30 2021-12-08 株式会社ディスコ Wafer generator
JP6961297B2 (en) * 2017-07-24 2021-11-05 株式会社ディスコ Chip manufacturing method
JP2019033134A (en) * 2017-08-04 2019-02-28 株式会社ディスコ Wafer generation method
JP6946153B2 (en) * 2017-11-16 2021-10-06 株式会社ディスコ Wafer generation method and wafer generator
JP6974133B2 (en) * 2017-11-22 2021-12-01 株式会社ディスコ How to mold a SiC ingot
JP6976828B2 (en) * 2017-11-24 2021-12-08 株式会社ディスコ Peeling device
JP7034683B2 (en) * 2017-11-29 2022-03-14 株式会社ディスコ Peeling device
JP6959120B2 (en) * 2017-12-05 2021-11-02 株式会社ディスコ Peeling device
JP7009194B2 (en) * 2017-12-12 2022-01-25 株式会社ディスコ Wafer generator and transport tray
JP7046617B2 (en) * 2018-01-22 2022-04-04 株式会社ディスコ Wafer generation method and wafer generation device
JP7123583B2 (en) * 2018-03-14 2022-08-23 株式会社ディスコ Wafer production method and wafer production apparatus
JP7027215B2 (en) * 2018-03-27 2022-03-01 株式会社ディスコ Wafer generation method and wafer generation device
JP7073172B2 (en) * 2018-04-03 2022-05-23 株式会社ディスコ How to generate a wafer
US10896815B2 (en) * 2018-05-22 2021-01-19 Semiconductor Components Industries, Llc Semiconductor substrate singulation systems and related methods
JP7140576B2 (en) * 2018-07-12 2022-09-21 株式会社ディスコ Wafer division method
JP7327920B2 (en) * 2018-09-28 2023-08-16 株式会社ディスコ Diamond substrate production method
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) * 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
CN111463172A (en) * 2019-01-21 2020-07-28 瀚宇彩晶股份有限公司 Manufacturing method of electronic device
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
SE543075C2 (en) 2019-05-23 2020-09-29 Ascatron Ab Crystal efficient SiC device wafer production
JP7442332B2 (en) 2020-02-07 2024-03-04 株式会社ディスコ How to generate wafers
JP7408475B2 (en) * 2020-04-16 2024-01-05 株式会社ディスコ Peeling device
CN111889896B (en) * 2020-07-02 2022-05-03 松山湖材料实验室 Ingot stripping method by ultrasonic-laser cooperation
EP4447091A4 (en) 2021-12-08 2025-03-12 Denso Corporation WAFER MANUFACTURING PROCESS
JP7741000B2 (en) * 2022-01-25 2025-09-17 株式会社ディスコ Method for manufacturing single crystal silicon substrate
CN116093006B (en) * 2023-03-06 2023-07-25 西北电子装备技术研究所(中国电子科技集团公司第二研究所) SiC wafer high-low frequency composite vibration heating stripping device and SiC wafer preparation method
CN120460941A (en) * 2024-02-07 2025-08-12 深圳市大族半导体装备科技有限公司 Processing method, device, device, equipment and storage medium

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Also Published As

Publication number Publication date
KR20160084800A (en) 2016-07-14
MY177233A (en) 2020-09-09
DE102016200026A1 (en) 2016-07-07
US9925619B2 (en) 2018-03-27
KR102341604B1 (en) 2021-12-22
TW201635363A (en) 2016-10-01
JP6391471B2 (en) 2018-09-19
DE102016200026B4 (en) 2023-04-27
SG10201510273SA (en) 2016-08-30
CN105750741B (en) 2020-01-31
CN105750741A (en) 2016-07-13
TWI662612B (en) 2019-06-11
US20160193691A1 (en) 2016-07-07
JP2016124015A (en) 2016-07-11

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