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JP2000094221A - Electric discharge wire saw - Google Patents

Electric discharge wire saw

Info

Publication number
JP2000094221A
JP2000094221A JP10269196A JP26919698A JP2000094221A JP 2000094221 A JP2000094221 A JP 2000094221A JP 10269196 A JP10269196 A JP 10269196A JP 26919698 A JP26919698 A JP 26919698A JP 2000094221 A JP2000094221 A JP 2000094221A
Authority
JP
Japan
Prior art keywords
wire
cutting
cutting wire
voltage
discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10269196A
Other languages
Japanese (ja)
Inventor
Tameyoshi Hirano
▲為▼義 平野
Kanji Handa
貫士 半田
Keiji Kawaguchi
桂司 川口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Advanced Technologies Co Ltd
Original Assignee
Toyo Advanced Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Advanced Technologies Co Ltd filed Critical Toyo Advanced Technologies Co Ltd
Priority to JP10269196A priority Critical patent/JP2000094221A/en
Publication of JP2000094221A publication Critical patent/JP2000094221A/en
Pending legal-status Critical Current

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  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)

Abstract

PROBLEM TO BE SOLVED: To secure a high electric discharge voltage for each cut wire portion by forming a plurality of wire portions to be cut by using one cutting wire. SOLUTION: This electric discharge wire saw is constructed in such a manner that a plurality of cut wire portions W1, W2, ..., are formed by winding a wire W to be cut on a plurality of guide rollers 24A, 24B, 26A and 26B, a work 28 is cut and fed while applying a voltage between each cut wire portion and the work 28, and then this is cut by electric discharging. In this case, by forming coil portions 51, ..., in the wire to be cut between the cut wire portions or setting a wire length to be sufficiently large so as to secure high impedance, the cut wire portions are insulated from each other on the appearance.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、低抵抗シリコン等
の導電性を有する材料からなるワークを切断用ワイヤに
よって放電切断加工するための放電式ワイヤソーに関す
るものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electric discharge wire saw for performing electric discharge cutting of a work made of a conductive material such as low-resistance silicon with a cutting wire.

【0002】[0002]

【従来の技術】従来、円柱状インゴットからウェハを切
り出す場合等における切断手段として、砥粒を用いたワ
イヤソーが知られている。このワイヤソーでは、複数の
ガイドローラ間に巻回された切断用ワイヤをその長手方
向に高速駆動しながら、そのワイヤに対してワークを切
断送りすることにより、このワークから多数枚の薄片が
同時に切り出される。
2. Description of the Related Art Conventionally, as a cutting means for cutting a wafer from a cylindrical ingot, a wire saw using abrasive grains has been known. In this wire saw, a cutting wire wound between a plurality of guide rollers is driven at a high speed in the longitudinal direction while a workpiece is cut and fed to the wire, whereby a large number of thin pieces are simultaneously cut out from the workpiece. It is.

【0003】しかし、このようなワイヤソーでは、ガイ
ドローラ間に形成された複数本の切断ワイヤ部分に対
し、加工用砥粒が混合された加工液(スラリー)を同時
供給する必要があり、その取扱いは容易でない。また、
ワイヤがワークに直接接触するため、切断中にワイヤが
断線するおそれがあり、このような断線が生じた場合に
は復旧までに長時間を要する不都合がある。
However, in such a wire saw, it is necessary to simultaneously supply a machining liquid (slurry) in which abrasive grains for machining are mixed to a plurality of cutting wire portions formed between guide rollers. Is not easy. Also,
Since the wire directly contacts the workpiece, the wire may be disconnected during cutting, and if such a disconnection occurs, it takes a long time to recover.

【0004】さらに、加工能率についても、上記従来の
ワイヤソーでは、直径8インチのインゴットからウェハ
を切り出すのに8時間程度を要しており、加工時間短縮
のニーズが高まっている。
[0004] Further, with regard to the processing efficiency, in the above-mentioned conventional wire saw, it takes about 8 hours to cut out a wafer from an ingot having a diameter of 8 inches, and there is an increasing need to shorten the processing time.

【0005】そこで近年は、導電性を有するワークを効
率良く切断する手段として、当該ワークと切断用ワイヤ
との間に電圧を断続的に印加し、各切断ワイヤ部分によ
ってワークを放電加工の原理で切断する放電式ワイヤソ
ーの開発が進められている。(例えば特開平9−248
719号公報)。
[0005] In recent years, as a means for efficiently cutting a conductive work, a voltage is intermittently applied between the work and the cutting wire, and the work is applied to each cut wire portion by the principle of electric discharge machining. Development of a discharge type wire saw for cutting is in progress. (For example, Japanese Patent Application Laid-Open No.
719).

【0006】[0006]

【発明が解決しようとする課題】従来の砥粒を用いたワ
イヤソーでは、単一の切断用ワイヤを複数のガイドロー
ラに巻回することにより複数本の切断ワイヤ部分を形成
するようにしているので、各切断ワイヤ部分同士は相互
導通された状態にある。従って、それぞれの切断ワイヤ
部分に個別に電圧を印加しようとしても、この電圧は他
の切断ワイヤ部分に分散されてしまうため、高い放電電
圧を発生させるのが非常に困難であるという不都合があ
る。
In a conventional wire saw using abrasive grains, a plurality of cutting wire portions are formed by winding a single cutting wire around a plurality of guide rollers. The cutting wire portions are in a state of mutual conduction. Therefore, even if an attempt is made to individually apply a voltage to each cutting wire portion, this voltage is dispersed to the other cutting wire portions, so that it is very difficult to generate a high discharge voltage.

【0007】その対策として、前記特開平9−2487
19号公報には、図10に示すように複数本(図例では
3本)の切断用ワイヤ1,2,3を用意し、各切断用ワ
イヤ1,2,3をそれぞれガイドローラ4,5間に複数
回(図例では3回)巻回することにより、1本当たりの
切断用ワイヤについて複数本(図例では3本)の切断ワ
イヤ部分1a,2a,3aをそれぞれ形成し、これらの
切断ワイヤ部分1a,2a,3aに対してワーク6を切
断送りする(図では奥側へ移動させる)とともに、各切
断用ワイヤ1,2,3ごとに個別に接触子1b,2b,
3bを接触させて電圧を印加するようにしたものが開示
されている。しかし、この場合でも、各切断用ワイヤに
印加された電圧は複数本の切断ワイヤ部分(例えば切断
用ワイヤ1に印加された電圧は3本の切断ワイヤ部分1
a)に分散されてしまい、電圧を印加する切断ワイヤ部
分が1本の場合に比べて切断能率が3分の1に低下する
という問題を有している。
As a countermeasure, Japanese Patent Laid-Open Publication No. 9-2487
In Japanese Patent No. 19, a plurality of (three in the illustrated example) cutting wires 1, 2, 3 are prepared as shown in FIG. By winding a plurality of times (three times in the illustrated example) in between, a plurality of (three in the illustrated example) cutting wire portions 1a, 2a and 3a are formed for each cutting wire, and these are respectively formed. The workpiece 6 is cut and sent to the cutting wire portions 1a, 2a, 3a (moved to the far side in the figure), and the contacts 1b, 2b,
There is disclosed one in which a voltage is applied by bringing 3b into contact. However, even in this case, the voltage applied to each cutting wire is a plurality of cutting wire portions (for example, the voltage applied to the cutting wire 1 is three cutting wire portions 1).
a), there is a problem that the cutting efficiency is reduced to one third as compared with the case where only one cutting wire portion is applied with a voltage.

【0008】なお、高い切断能率を確保する手段とし
て、ワイヤ切断部分の必要本数と同じ本数だけ切断用ワ
イヤを張設し(すなわち1本の切断用ワイヤで1本のワ
イヤ切断部分のみを形成し)、切断用ワイヤ同士を絶縁
しながら各切断用ワイヤに電圧を印加することが考えら
れるが、この場合には極めて多数本の切断用ワイヤが必
要であり、構造も複雑になる。
[0008] As means for securing high cutting efficiency, the same number of cutting wires as the required number of wire cutting portions are stretched (that is, only one wire cutting portion is formed with one cutting wire). It is conceivable to apply a voltage to each cutting wire while insulating the cutting wires, but in this case, an extremely large number of cutting wires are required, and the structure becomes complicated.

【0009】本発明は、このような事情に鑑み、切断用
ワイヤをガイドローラに巻回することにより多数本の切
断ワイヤ部分を形成しながら、各切断ワイヤ部分で高い
放電電圧を発生させることができる放電式ワイヤソーを
提供することを目的とする。
In view of such circumstances, the present invention can generate a high discharge voltage at each cutting wire portion while forming a large number of cutting wire portions by winding a cutting wire around a guide roller. It is an object of the present invention to provide a discharge type wire saw that can be used.

【0010】[0010]

【課題を解決するための手段】上記課題を解決するため
の手段として、本発明は、複数のガイドローラに切断用
ワイヤを巻回することにより1本の切断用ワイヤで複数
本の切断ワイヤ部分を形成し、各切断ワイヤ部分とワー
クとの間に電圧を印加しながらワークを各切断ワイヤ部
分に対して切断送りすることにより当該ワークを各切断
ワイヤ部分で放電切断する放電式ワイヤソーであって、
各切断ワイヤ部分ごとに、その切断ワイヤ部分とワーク
との間に電圧を断続的に印加する電圧印加手段を設ける
とともに、上記各切断ワイヤ部分同士の間の部分で切断
用ワイヤをコイル状にしたものである。
As a means for solving the above-mentioned problems, the present invention provides a method for winding a cutting wire around a plurality of guide rollers to form a plurality of cutting wire portions with one cutting wire. A discharge wire saw that discharges and cuts the work at each cutting wire portion by cutting and feeding the work to each cutting wire portion while applying a voltage between each cutting wire portion and the work, ,
A voltage applying means for intermittently applying a voltage between the cutting wire portion and the work was provided for each cutting wire portion, and the cutting wire was coiled at a portion between the cutting wire portions. Things.

【0011】この構成によれば、切断ワイヤ部分同士の
間にコイル状部分が形成されることにより、当該部分で
インダクタンス及びワイヤ抵抗が稼がれ、ひいてはその
合成インピーダンスが増大する。これにより、切断ワイ
ヤ部分同士の間の電気的絶縁性が高められ、各切断ワイ
ヤ部分に電圧が印加された際にこれに隣接する切断ワイ
ヤ部分に放電電圧が分散されることが防がれ、もしくは
抑制される。その結果、共通の切断用ワイヤで複数本の
切断ワイヤ部分を形成しながら、各切断ワイヤ部分に高
い放電電圧を確保することができる。
According to this configuration, since the coil-shaped portion is formed between the cut wire portions, an inductance and a wire resistance are obtained at the portion, and the combined impedance is increased. Thereby, the electrical insulation between the cutting wire portions is enhanced, and when a voltage is applied to each cutting wire portion, the discharge voltage is prevented from being dispersed to the cutting wire portion adjacent thereto, Or it is suppressed. As a result, it is possible to secure a high discharge voltage at each cutting wire portion while forming a plurality of cutting wire portions with a common cutting wire.

【0012】上記コイル状部分を形成する手段として、
上記各切断ワイヤ部分同士の間の部分で切断用ワイヤを
単一のガイドローラに複数回巻回するようにすれば、既
存のガイドローラを利用しながらコイル状部分を形成す
ることができる。
As means for forming the coil-shaped portion,
If the cutting wire is wound a plurality of times around a single guide roller at a portion between the cutting wire portions, a coil-shaped portion can be formed using an existing guide roller.

【0013】また本発明では、上記コイル状部分を形成
しなくても、各切断ワイヤ部分間のワイヤ長を大きくし
てインピーダンスを稼げば、切断ワイヤ部分間の電気的
絶縁性を高めることが可能である。この場合、目安とし
て、切断ワイヤ部分に50kHzの周波数(放電切断加工で
使用される周波数の推定平均値)で電圧が印加された時
に当該印加電圧とこれに隣接する切断ワイヤ部分に分散
される電圧との比が20%以下(より好ましくは10%以
下)となる程度に上記ワイヤ長を設定すればよい。ま
た、切断用ワイヤに抵抗の高い材料(例えば鋼材)を用
いることにより、ワイヤ長は従来のワイヤソーと同等で
あっても十分なインピーダンスを稼ぐことが可能であ
る。
According to the present invention, even if the coil-shaped portion is not formed, the electrical insulation between the cut wire portions can be improved by increasing the wire length between the cut wire portions and increasing the impedance. It is. In this case, as a guide, when a voltage is applied to the cutting wire portion at a frequency of 50 kHz (estimated average value of the frequency used in electric discharge cutting), the applied voltage and the voltage distributed to the cutting wire portion adjacent thereto are applied. The wire length may be set so that the ratio of the wire length becomes 20% or less (more preferably, 10% or less). Further, by using a material having a high resistance (for example, a steel material) for the cutting wire, it is possible to obtain a sufficient impedance even if the wire length is equivalent to that of a conventional wire saw.

【0014】ここで、5本以上のガイドローラを具備
し、そのうちの少なくとも3本のガイドローラに対して
切断用ワイヤをジグザグ状に掛け渡すようにすれば、コ
ンパクトな構造で大きなワイヤ長を稼ぐことが可能であ
る。
Here, if at least five guide rollers are provided and at least three guide rollers are wound around the zigzag cutting wire, a large wire length can be obtained with a compact structure. It is possible.

【0015】本発明では、複数本の切断用ワイヤを使用
してもよいが、1本の切断用ワイヤのみを用い、全切断
ワイヤ部分を単一の切断用ワイヤで構成することによ
り、構造が最も簡素化され、より効果的となる。
In the present invention, a plurality of cutting wires may be used. However, only one cutting wire is used, and the entire cutting wire portion is constituted by a single cutting wire. Most simplified and more effective.

【0016】また、各切断ワイヤ部分に電圧を印加する
ための具体的な構造として、電圧印加用の複数の導体を
相互に絶縁した状態で一体化した電極ユニットを備え、
この電極ユニットの各導体を上記各切断ワイヤ部分に接
触させるようにすれば、各切断ワイヤ部分に対応して複
数の導体を個別に配設する場合に比べ、取扱いが簡便に
なって組上げ効率が高くなる。
As a specific structure for applying a voltage to each cutting wire portion, there is provided an electrode unit in which a plurality of voltage applying conductors are integrated while being insulated from each other.
If each conductor of the electrode unit is brought into contact with each of the cutting wire portions, the handling becomes simpler and assembly efficiency is improved as compared with a case where a plurality of conductors are individually arranged corresponding to each of the cutting wire portions. Get higher.

【0017】[0017]

【発明の実施の形態】本発明にかかる第1の実施の形態
を図1〜図4に示す。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment according to the present invention is shown in FIGS.

【0018】図3に示すワイヤソーは、一対のワイヤ繰
出し・巻取り装置10A,10B、プーリ12A,12
B、プーリ14A,14B、プーリ16A,16B、ワ
イヤ張力調節装置18A,18B、プーリ22A,22
B、及び4つのガイドローラ24A,24B,26A,
26Bを備えている。ガイドローラ24A,24Bは互
いに同じ高さ位置に配され、ガイドローラ26A,26
Bはそれぞれガイドローラ24A,24Bの下方の位置
に配されており、ガイドローラ26Aが駆動モータ25
によって回転駆動されるようになっている。
The wire saw shown in FIG. 3 comprises a pair of wire feeding / winding devices 10A, 10B, pulleys 12A, 12B.
B, pulleys 14A, 14B, pulleys 16A, 16B, wire tension adjusting devices 18A, 18B, pulleys 22A, 22
B, and four guide rollers 24A, 24B, 26A,
26B. The guide rollers 24A and 24B are arranged at the same height position, and the guide rollers 26A and 26
B are disposed below the guide rollers 24A and 24B, respectively.
Is driven to rotate.

【0019】各ワイヤ繰出し・巻取り装置10A,10
Bは、切断用のワイヤWが巻かれるボビン9A,9B
と、これを回転駆動するボビン駆動モータ11A,11
Bとを備えている。一方のワイヤ繰出し・巻取り装置1
0Aのボビン9Aから繰り出されたワイヤWは、プーリ
12A,14A,16A、ワイヤ張力調節装置18Aの
プーリ20A、及びプーリ22Aの順に掛けられ、さら
に多数のガイド溝をもつガイドローラ24A,24B,
26B,26Aの外側に多数回巻回された後、プーリ2
2B、ワイヤ張力調節装置18Bのプーリ20B、プー
リ16B,14B,12Bの順に掛けられ、他方のワイ
ヤ繰出し・巻取り装置10Bのボビン9Bに巻き取られ
ており、両ワイヤ張力調節装置18A,18Bによって
ワイヤWに適当な張力が与えられている。そして、駆動
モータ25によるガイドローラ26Aの回転駆動方向
と、各ボビン駆動モータ11A,11Bによるボビン9
A,9Bの回転駆動方向が正逆に切換えられることによ
り、ワイヤWがボビン9Aから繰り出されてボビン9B
に巻き取られる状態と、ワイヤWがボビン9Bから繰り
出されてボビン9Aに巻き取られる状態とに切換えられ
るようになっている。
Each wire feeding / winding device 10A, 10
B is a bobbin 9A, 9B around which a cutting wire W is wound.
And bobbin drive motors 11A and 11
B. One wire feeding and winding device 1
The wire W fed out from the bobbin 9A of 0A is applied to the pulleys 12A, 14A, 16A, the pulley 20A of the wire tension adjusting device 18A, and the pulley 22A in this order, and further has guide rollers 24A, 24B having a large number of guide grooves.
After being wound many times around the outside of 26B, 26A, pulley 2
2B, the pulley 20B and the pulleys 16B, 14B and 12B of the wire tension adjusting device 18B are wound in this order, and are wound around the bobbin 9B of the other wire feeding / winding device 10B. An appropriate tension is applied to the wire W. The driving direction of the guide roller 26A by the driving motor 25 and the bobbin 9 by the bobbin driving motors 11A and 11B.
The wire W is fed out from the bobbin 9A by switching the rotation driving direction of the A, 9B between forward and reverse, and the bobbin 9B
And the state in which the wire W is unwound from the bobbin 9B and wound on the bobbin 9A.

【0020】すなわち、このワイヤソーにおいては、図
1に示すように、ガイドローラ24A,24Bの間に、
単一の切断用ワイヤWで構成された多数本のワイヤ切断
部分(図1では便宜上5本の切断ワイヤ部分W1,W
2,W3,W4,W5のみ図示)が互いに平行な状態で
張られながらその長手方向に往復駆動されるようになっ
ている。
That is, in this wire saw, as shown in FIG. 1, between the guide rollers 24A and 24B,
A large number of wire cutting portions constituted by a single cutting wire W (five cutting wire portions W1, W in FIG. 1 for convenience)
2, W3, W4, and W5) are reciprocated in the longitudinal direction while being stretched in parallel with each other.

【0021】図3に示すように、ガイドローラ24A,
24B間に張られたワイヤWの上方には、円柱状のワー
ク28を横向きの状態で昇降させるワーク送り装置30
が設けられている。このワーク送り装置30は、ワーク
保持部32と、ワーク送りモータ34とを備えている。
ワーク保持部32は、上記ワーク28をその軸方向とワ
イヤ並び方向とが合致する向きに保持するものであり、
ワーク送りモータ34は、図略のボールネジとの組み合
わせにより、上記ワーク保持部32とワーク28とを一
体に昇降させる(すなわち切断送りする)ものである。
As shown in FIG. 3, the guide rollers 24A,
Above the wire W stretched between the wires 24B, a work feeding device 30 for raising and lowering the columnar work 28 in a horizontal state.
Is provided. The work feed device 30 includes a work holding unit 32 and a work feed motor 34.
The work holding unit 32 holds the work 28 in a direction in which the axial direction of the work 28 matches the wire arrangement direction.
The work feed motor 34 integrally moves the work holding unit 32 and the work 28 up and down (that is, cuts and feeds) in combination with a ball screw (not shown).

【0022】ガイドローラ24A,24Bの間に張られ
たワイヤWの上方において、ワーク28とその左右両側
に位置する後述の電極ユニット40との間の位置には、
加工液供給装置36A,36Bが設けられている。これ
らの加工液供給装置36A,36Bは、高速駆動される
各ワイヤWに対して加工液(スラリーではない)を同時
供給し、これをワイヤWに付着させるものである。
Above the wire W stretched between the guide rollers 24A and 24B, a position between the work 28 and an electrode unit 40 which will be described later, which is located on the left and right sides of the work 28,
Processing fluid supply devices 36A and 36B are provided. These processing liquid supply devices 36A and 36B simultaneously supply a processing liquid (not a slurry) to each of the wires W driven at a high speed, and attach the processing liquid to the wires W.

【0023】従って、このワイヤソーでは、ガイドロー
ラ24A,24B間に張られた多数本の切断ワイヤ部分
W1,W2,W3,W4,W5,…(図1)がその長手
方向に同時高速駆動され、かつ、これらのワイヤWに加
工液供給装置36A,36Bから供給された加工液が放
電切断位置に供給されながら、これらのワイヤWに対し
てワークWが下方に切断送りされるようになっている。
Therefore, in this wire saw, a large number of cutting wire portions W1, W2, W3, W4, W5,... (FIG. 1) stretched between the guide rollers 24A, 24B are simultaneously driven at high speed in the longitudinal direction. In addition, while the machining fluid supplied to the wires W from the machining fluid supply devices 36A and 36B is supplied to the discharge cutting position, the workpiece W is cut and sent downward to the wires W. .

【0024】そして、このワイヤソーでは、各切断ワイ
ヤ部分W1,W2,W3,W4,W5,…によってワー
ク28を放電切断すべく、このワーク28と各切断ワイ
ヤ部分W1,W2,W3,W4,W5,…との間に電圧
を印加する手段を備えている。
In this wire saw, the workpiece 28 and the respective cutting wire portions W1, W2, W3, W4, W5 are cut so as to discharge-discharge the workpiece 28 by the respective cutting wire portions W1, W2, W3, W4, W5,. ,... Are provided.

【0025】具体的に、このワイヤソーでは、ワーク2
8の前後の位置に電極ユニット40(図1,図2)が配
設されるとともに、これら電極ユニット40を媒介とし
てワーク−切断ワイヤ部分間に電圧を印加するため電圧
印加回路(図4)が具備されている。
Specifically, in this wire saw, the work 2
The electrode units 40 (FIGS. 1 and 2) are disposed at positions before and after the position 8 and a voltage application circuit (FIG. 4) for applying a voltage between the work and the cutting wire portion through the electrode units 40 is provided. Provided.

【0026】図2に示すように、各電極ユニット40
は、切断ワイヤ部分W1,W2,…と同数の導体ブロッ
ク41と絶縁ブロック42とが交互に並べて配置された
ものであり、これらのブロック41,42をボルト43
が横方向に貫通した状態で当該ボルト43の端部にナッ
ト44が締め付けられることにより、ブロック41,4
2が一体化されている。各導体ブロック41の上端に
は、電圧印加回路から導出されたケーブル46の導体端
末46aがはんだ付け47によって接続されるととも
に、図2に示すように各導体ブロック41の下面が各切
断ワイヤ部分W1,W2,…と接触する位置に、電極ユ
ニット40が配設されている。また、各ブロック41,
42とボルト43との間には、その隙間を埋めるための
カラー45が介設されている。
As shown in FIG. 2, each electrode unit 40
Are arranged in such a manner that the same number of conductor blocks 41 and insulating blocks 42 as the cutting wire portions W1, W2,... Are alternately arranged.
The nuts 44 are tightened to the ends of the bolts 43 in a state in which the blocks 41 and 4 penetrate in the lateral direction, so that
2 are integrated. At the upper end of each conductor block 41, a conductor terminal 46a of a cable 46 derived from a voltage application circuit is connected by soldering 47, and as shown in FIG. , W2,..., The electrode unit 40 is disposed at a position where the electrode unit 40 comes into contact. In addition, each block 41,
A collar 45 is provided between 42 and the bolt 43 to fill the gap.

【0027】なお、この電極ユニット40は必ずしもワ
ーク28の前後の位置に設けなくてもよく、その前側位
置もしくは後側位置にのみ設けるようにしてもよい。
The electrode unit 40 does not necessarily need to be provided at the front and rear positions of the work 28, but may be provided only at the front position or the rear position.

【0028】上記電圧印加回路を図4に示す。なお、こ
の図では便宜上、3本の切断ワイヤ部分W1,W2,W
3に対応する回路のみを示している。
FIG. 4 shows the voltage application circuit. In this figure, three cutting wire portions W1, W2, W
Only the circuit corresponding to No. 3 is shown.

【0029】同図において、R1,R2,R3は、各切
断ワイヤ部分W1,W2,W3とワーク28との間に発
生する放電抵抗を示しており、各放電抵抗ごとに(すな
わち各切断ワイヤ部分ごとに)、電圧印加用の電源E
1,E2,E3と、各電源E1,E2,E3からの電圧
供給を個別にオンオフするスイッチング素子であるトラ
ンジスタT1,T2,T3が設けられている。
In the figure, R1, R2, and R3 indicate discharge resistances generated between the cutting wire portions W1, W2, and W3 and the work 28, and each discharge resistance (ie, each cutting wire portion). Power supply E for voltage application
1, E2, and E3, and transistors T1, T2, and T3, which are switching elements that individually turn on and off the voltage supply from the power supplies E1, E2, and E3.

【0030】各トランジスタT1,T2,T3のベース
はコントローラ50に接続されており、このコントロー
ラ50による制御信号の出力によって各トランジスタT
1,T2,T3が個別に所定の周波数でオンオフ作動
し、これにより当該周波数をもつパルス電圧がワーク2
8と各切断ワイヤ部分W1,W2,W3との間に個別に
印加される(すなわち電圧が断続的に印加される)よう
になっている。そして、このような所定の周波数による
電圧の印加を行いながら、各切断ワイヤ部分W1,W
2,…に対してワーク28を切断送りすることにより、
このワーク28から多数枚のウェハが切り出されるので
ある。
The bases of the transistors T1, T2, and T3 are connected to a controller 50. The output of a control signal from the controller 50 causes each transistor T1, T2, and T3 to output a signal.
1, T2 and T3 are individually turned on and off at a predetermined frequency, so that a pulse voltage having the frequency is applied to the work 2
8 and each cutting wire portion W1, W2, W3 is applied individually (that is, voltage is applied intermittently). Then, while applying a voltage at such a predetermined frequency, each cutting wire portion W1, W
By cutting and feeding the work 28 to 2,.
A large number of wafers are cut out from the work 28.

【0031】さらに、このワイヤソーの特徴として、各
切断ワイヤ部分W1,W2,W3,W4,…の間のワイ
ヤ部分が特定のガイドローラ(図例ではガイドローラ2
6B)に複数回(図1では5回)巻かれることにより、
コイル状部分51,52,…が形成されており、これら
のコイル状部分51,52,…の形成により、各切断ワ
イヤ部分W1,W2,W3,…同士の間にインダクタン
スL12,L23,…が形成され、このインダクタンスL
12,L23,…とワイヤ自身の抵抗R12,R23,…とから
なる合成インピーダンスZ12,L23,…(図4)が確保
されるようになっている。
Further, as a feature of this wire saw, a wire portion between the cutting wire portions W1, W2, W3, W4,.
6B) is wound several times (five times in FIG. 1),
Coiled section 51, 52, ... are formed, these coiled portions 51 and 52, by ... formation of each cutting wire part W1, W2, W3, ... inductance L 12, L 23 between the adjacent, Are formed, and this inductance L
12, L 23, ... and the resistor R 12 of the wire itself, R 23, composed of ... and combined impedance Z 12, L 23, ... so that the (FIG. 4) is ensured.

【0032】ここで、「十分なインピーダンス」とは、
特定の切断ワイヤ部分に印加された電圧がこれに隣接す
る切断ワイヤ部分に分散されるのを抑制して十分な放電
電圧を確保するに足るインピーダンスを意味する。換言
すれば、各切断ワイヤ部分間に十分なインダクタンスを
確保して切断ワイヤ部分同士を実質上電気的にほぼ絶縁
された状態にすることにより、特定の切断ワイヤ部分に
印加された電圧がこれに隣接する切断ワイヤ部分に分散
されるのを抑制して十分な放電電圧が確保されるのであ
る。その原理を図4の回路を用いて以下に詳述する。
Here, “sufficient impedance” means
It means an impedance sufficient to prevent a voltage applied to a specific cutting wire portion from being distributed to a cutting wire portion adjacent thereto and to secure a sufficient discharge voltage. In other words, by ensuring sufficient inductance between each cutting wire portion and making the cutting wire portions substantially electrically insulated, the voltage applied to a particular cutting wire portion will Sufficient discharge voltage is ensured by suppressing dispersion to adjacent cutting wire portions. The principle will be described in detail below using the circuit of FIG.

【0033】同図に示すRL回路は、ローパスフィルタ
の特性を有する。例えば、放電抵抗R1についての電圧
印加回路について着目すると、その入力電圧(電源E1
の電圧)V1に対する漏れ電圧(抵抗R1に隣接する抵
抗R2に分散して発生する電圧)V2の比すなわち電圧
比Hv(=V2/V1)は次式で表される。
The RL circuit shown in the figure has characteristics of a low-pass filter. For example, paying attention to the voltage application circuit for the discharge resistor R1, its input voltage (power supply E1
The ratio of the leakage voltage (a voltage generated and distributed to the resistor R2 adjacent to the resistor R1) V2 to the voltage V1), that is, the voltage ratio Hv (= V2 / V1) is expressed by the following equation.

【0034】[0034]

【数1】 (Equation 1)

【0035】このときの振幅特性|Hv|は次式で表され
る。
The amplitude characteristic | Hv | at this time is represented by the following equation.

【0036】[0036]

【数2】 (Equation 2)

【0037】この電圧比の振幅 |Hv| が小さいほど、
隣接する切断ワイヤ部分に放電電圧が分散される割合が
小さく、十分な放電電圧を確保できるということにな
る。この電圧比振幅 |Hv| は、前記数1に示されるイ
ンピーダンスZ12(インダクタンスL12及びワイヤ抵抗
12からなる合成インピーダンス)が大きいほど小さく
なるのであるから、このインピーダンスZ12を大きくす
る(具体的に図1の構成ではコイル状部分51,52,
53,…の巻数を増やしてインダクタンスL12を大きく
し、またワイヤ長を大きくしてワイヤ抵抗R12を大きく
する)ことにより、高い放電電圧を確保することが可能
になる。すなわち、この構成により、単一本のワイヤW
で複数本の切断ワイヤ部分W1,W2,…を形成して簡
素な構造としながら、各切断ワイヤ部分W1,W2,…
とワーク28との間に十分な放電電圧を確保することが
できる。
As the amplitude | Hv | of this voltage ratio becomes smaller,
The rate at which the discharge voltage is dispersed to the adjacent cutting wire portion is small, and a sufficient discharge voltage can be secured. Since the voltage ratio amplitude | Hv | decreases as the impedance Z 12 (combined impedance including the inductance L 12 and the wire resistance R 12 ) shown in Equation 1 increases, the impedance Z 12 is increased (specifically, In the configuration of FIG. 1, the coil-shaped portions 51, 52,
53, to increase the inductance L 12 Increase ... number of turns of, also by increasing the wire length increases the wire resistance R 12) by, it is possible to ensure a high discharge voltage. That is, with this configuration, a single wire W
, A plurality of cutting wire portions W1, W2,... Are formed to have a simple structure, while each cutting wire portion W1, W2,.
A sufficient discharge voltage can be secured between the workpiece and the work 28.

【0038】第2の実施の形態を図5に示す。この実施
の形態では、前記第1の実施の形態のようにコイル状部
分51,52,…を形成する代わりに、ガイドローラ2
6A,26Bの間において両ガイドローラ26A,26
Bよりも高い位置にガイドローラ27を配し、これらが
ガイドローラ26A,27,26BにワイヤWをジグザ
グ状に掛け渡すことにより、切断ワイヤ部分同士の間の
ワイヤ長を稼いでそのインピーダンスを高めるようにし
ている。
FIG. 5 shows a second embodiment. In this embodiment, instead of forming the coiled portions 51, 52,... As in the first embodiment, the guide rollers 2
6A and 26B, both guide rollers 26A and 26
The guide rollers 27 are arranged at a position higher than B, and these guide the wires W in a zigzag manner over the guide rollers 26A, 27, 26B, thereby increasing the wire length between the cut wire portions and increasing the impedance. Like that.

【0039】この構成においても、ワイヤWを蛇行させ
ることにより、コンパクトな構造としながら、切断ワイ
ヤ部分間に十分なインピーダンスを確保して不都合のな
い放電切断加工をすることが可能である。
Also in this configuration, by making the wire W meander, it is possible to secure a sufficient impedance between the cutting wire portions and to perform a trouble-free electric discharge cutting while keeping the compact structure.

【0040】なお、ここでいう「切断ワイヤ部分間のワ
イヤ長」とは、例えば前記図1に示したようにワーク2
8の前後に電極ユニット40またはこれに相当する接触
子が配設されている構造においては、後側の電極ユニッ
ト40(または接触子)からガイドローラ24A,26
A,26B,24Bを経由して前側の電極ユニット40
(または接触子)に至るまでの長さ(換言すれば、切断
用ワイヤWの1周当たりの長さから両電極ユニット40
間の距離または接触子間の距離を差し引いた長さ)を意
味する。また、電極ユニット40(または接触子)が前
側位置もしくは後側位置にのみ設けられている場合に
は、切断用ワイヤWの1周当たりの長さを意味する。
The “wire length between the cutting wire portions” here means, for example, the work 2 as shown in FIG.
In the structure in which the electrode unit 40 or a contact corresponding thereto is provided before and after the electrode unit 8, the electrode rollers 40 (or the contact) on the rear side form the guide rollers 24A and 26A.
A, 26B, and 24B via the front electrode unit 40
(Or a contact) (in other words, from the length per circumference of the cutting wire W to the two electrode units 40).
(The length obtained by subtracting the distance between the contacts or the distance between the contacts). Further, when the electrode unit 40 (or the contact) is provided only at the front position or the rear position, it means the length per circumference of the cutting wire W.

【0041】本発明は、その他、次のような実施の形態
をとることが可能である。
The present invention can also adopt the following embodiments.

【0042】(1)図1には、導体ブロック41と絶縁
ブロック42とを交互に並べた電極ユニット40を用い
たものを示したが、本発明はこれに限らず、例えば各切
断ワイヤ部分に個別に接触する導体接触子を相互独立に
設置するようにしてもよい。ただし、上記のようにユニ
ット化すれば、取扱いが容易となり、ワイヤソー全体の
組付作業性が高まるという利点が得られる。
(1) FIG. 1 shows an embodiment using an electrode unit 40 in which conductive blocks 41 and insulating blocks 42 are alternately arranged. However, the present invention is not limited to this. The conductor contacts that individually contact each other may be installed independently of each other. However, when the unit is formed as described above, there is an advantage that the handling becomes easy and the assembling workability of the entire wire saw is improved.

【0043】(2)図1には、ガイドローラ26Bの周
囲にコイル状部分51,52,…を形成したものを示し
たが、コイル状にワイヤを巻くガイドローラは適宜設定
すればよく、また、複数のガイドローラに対してワイヤ
をコイル状に巻くようにしてもよい。
(2) FIG. 1 shows a configuration in which the coiled portions 51, 52,... Are formed around the guide roller 26B, but the guide roller for winding the wire in a coil shape may be appropriately set. Alternatively, a wire may be wound in a coil shape around a plurality of guide rollers.

【0044】(3)本発明では、具体的なガイドローラ
の個数を問わず、2個以上のガイドローラを具備するす
べてのワイヤソーについて適用が可能なものである。第
2の実施の形態のようにワイヤ長を稼ぐ場合でも、その
個数は適宜設定が可能であり、必ずしもジグザグ状にワ
イヤWを掛け渡す必要はない。ただし、図5に示したよ
うに少なくとも3つのガイドローラについてワイヤWを
ジグザグ状に掛け渡すことにより、コンパクトな構造で
十分なワイヤ長を確保できる利点が得られる。
(3) The present invention is applicable to all wire saws having two or more guide rollers regardless of the number of guide rollers. Even when the wire length is increased as in the second embodiment, the number thereof can be set as appropriate, and it is not always necessary to extend the wire W in a zigzag shape. However, as shown in FIG. 5, by winding the wire W in at least three guide rollers in a zigzag manner, an advantage that a sufficient wire length can be secured with a compact structure can be obtained.

【0045】また、切断用ワイヤWとして、通常用いら
れる線材(モリブデン等からなる線材)よりも抵抗の高
い線材(すなわちインピーダンスの高い線材;例えばピ
アノ線をはじめとする鋼線)を用いれば、通常のワイヤ
ソーと比べて特にワイヤ長を大きく稼がなくても、十分
な放電電圧を確保するに足る切断ワイヤ部分間のインピ
ーダンスを得ることが可能である。
If a wire having a higher resistance (ie, a wire having a high impedance; for example, a steel wire such as a piano wire) than a wire (a wire made of molybdenum) is used as the cutting wire W, It is possible to obtain an impedance between the cut wire portions that is sufficient to secure a sufficient discharge voltage, even if the wire length is not particularly large compared to the wire saw.

【0046】[0046]

【実施例】1)第1実施例 前記第1の実施の形態で示した構造において、切断用ワ
イヤWに直径0.18mmのモリブデン製ワイヤを用い、外周
面に不導体をコーティングした直径300mmのS10C製ガイ
ドローラ26BにワイヤWを相互非接触の状態で5回巻
くことにより、切断ワイヤ部分間のワイヤ長を6m、抵
抗を10Ω、コイル状部分のインダクタンスを50μHとし
た。このときの放電周波数に対する振幅特性(|Hv|の
特性)を図6に示す。
EXAMPLE 1) First Example In the structure shown in the first embodiment, a 300 mm diameter S10C in which a molybdenum wire having a diameter of 0.18 mm was used for the cutting wire W and a nonconductor was coated on the outer peripheral surface. By winding the wire W around the guide roller 26B five times in a non-contact state, the wire length between the cut wire portions was 6 m, the resistance was 10Ω, and the inductance of the coil portion was 50 μH. FIG. 6 shows the amplitude characteristic (the characteristic of | Hv |) with respect to the discharge frequency at this time.

【0047】同図のように、この実施例によれば、1kH
z以上の放電周波数において、振幅特性を20%以下に抑
えることが可能であり、一般に放電ワイヤ加工で用いら
れる平均周波数(50kHz)では振幅特性を10%まで抑え
ることが可能となっている。これにより、放電中の切断
ワイヤ部分に隣接する切断ワイヤ部分で放電が生じるの
を防ぐことができる。
As shown in the figure, according to this embodiment, 1 kHz
The amplitude characteristic can be suppressed to 20% or less at a discharge frequency of z or more, and the amplitude characteristic can be suppressed to 10% at an average frequency (50 kHz) generally used in discharge wire machining. Thus, it is possible to prevent discharge from occurring at the cutting wire portion adjacent to the cutting wire portion during discharge.

【0048】2)第2実施例 前記第2の実施の形態で示した構造において、切断用ワ
イヤWに直径0.18mmのモリブデン製ワイヤを用い、切断
ワイヤ部分間のワイヤ長を3.5mにした。このときの放
電周波数に対する振幅特性を図7に示す。
2) Second Example In the structure shown in the second embodiment, a molybdenum wire having a diameter of 0.18 mm was used as the cutting wire W, and the wire length between the cutting wire portions was set to 3.5 m. FIG. 7 shows amplitude characteristics with respect to the discharge frequency at this time.

【0049】同図のように、この実施例によれば、切断
用ワイヤの抵抗成分の増大により、全周波数領域におい
て振幅特性を20%以下に抑えることが可能であり、切断
用ワイヤによる放電切断を不都合なく行うことができ
る。
As shown in the figure, according to this embodiment, the amplitude characteristic can be suppressed to 20% or less in the entire frequency range by increasing the resistance component of the cutting wire. Can be performed without any inconvenience.

【0050】3)第3実施例 前記第3の実施の形態で示した構造において、切断用ワ
イヤWに直径0.18mmのモリブデン製ワイヤを用い、切断
ワイヤ部分間のワイヤ長を7.0mにした。このときの放
電周波数に対する振幅特性を図8に示す。
3) Third Example In the structure shown in the third embodiment, a molybdenum wire having a diameter of 0.18 mm was used as the cutting wire W, and the wire length between the cutting wire portions was set to 7.0 m. FIG. 8 shows the amplitude characteristics with respect to the discharge frequency at this time.

【0051】同図のように、この実施例によれば、全周
波数領域において、振幅特性を10%以下に抑えることが
可能であり、第2実施例よりもさらに効率の高い切断加
工をすることができる。
As shown in the figure, according to this embodiment, it is possible to suppress the amplitude characteristic to 10% or less in the entire frequency range, and it is possible to perform cutting with higher efficiency than in the second embodiment. Can be.

【0052】4)第4実施例 従来のワイヤソーと同等の構造(図1に示した構造でコ
イル状部分51,52,…を形成しないもの;切断ワイ
ヤ部分間のワイヤ長が2.5mのもの)において、モリブ
デン製ワイヤの代わりにこれよりも単位長さ当たりの抵
抗値が高いピアノ線からなるワイヤを用い、放電周波数
に対する振幅特性を調べた。その結果を図9に示す。図
示のように、この実施例によれば、特にワイヤ長を稼が
なくても全周波数領域において優れた振幅特性(約9
%)を得ることが可能である。
4) Fourth Embodiment A structure equivalent to the conventional wire saw (the structure shown in FIG. 1 without the coiled portions 51, 52,...; The wire length between the cut wire portions is 2.5 m) In Example 2, a wire made of a piano wire having a higher resistance value per unit length was used instead of the molybdenum wire, and the amplitude characteristics with respect to the discharge frequency were examined. FIG. 9 shows the result. As shown, according to this embodiment, excellent amplitude characteristics (approximately 9
%).

【0053】[0053]

【発明の効果】以上のように本発明は、複数のガイドロ
ーラに切断用ワイヤを巻回することにより1本の切断用
ワイヤで複数本の切断ワイヤ部分を形成し、かつ、各切
断ワイヤ部分ごとに、その切断ワイヤ部分とワークとの
間に電圧を断続的に印加するとともに、上記各切断ワイ
ヤ部分同士の間の部分で切断用ワイヤをコイル状にし、
あるいは大きなワイヤ長をとることにより、当該部分で
インピーダンスを稼ぎ、切断ワイヤ部分間に高い電気的
絶縁性を確保したものであるので、使用する切断用ワイ
ヤの本数を少なくして構造を簡素化しながら、各切断ワ
イヤ部分について高い放電電圧を確保して効率の高い切
断加工ができる効果がある。
As described above, according to the present invention, a plurality of cutting wire portions are formed by a single cutting wire by winding a cutting wire around a plurality of guide rollers. Each time, while applying a voltage intermittently between the cutting wire portion and the workpiece, the cutting wire in the portion between the respective cutting wire portions into a coil shape,
Alternatively, by adopting a large wire length, the impedance is gained in the portion, and high electrical insulation is secured between the cutting wire portions, so that the number of cutting wires to be used is reduced and the structure is simplified. In addition, there is an effect that a high discharge voltage can be secured for each cutting wire portion and a cutting operation with high efficiency can be performed.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施の形態にかかる放電式ワイ
ヤソーの要部を示す斜視図である。
FIG. 1 is a perspective view showing a main part of a discharge type wire saw according to a first embodiment of the present invention.

【図2】上記ワイヤソーに用いられる電極ユニットの断
面正面図である。
FIG. 2 is a sectional front view of an electrode unit used for the wire saw.

【図3】上記ワイヤソーの全体構成図である。FIG. 3 is an overall configuration diagram of the wire saw.

【図4】上記ワイヤソーに具備される電圧印加回路を示
した図である。
FIG. 4 is a diagram showing a voltage application circuit provided in the wire saw.

【図5】本発明の第2の実施の形態にかかる放電式ワイ
ヤソーの要部を示す正面図である。
FIG. 5 is a front view showing a main part of a discharge type wire saw according to a second embodiment of the present invention.

【図6】本発明の第1実施例にかかる放電式ワイヤソー
の放電周波数と振幅特性との関係を示すグラフである。
FIG. 6 is a graph showing a relationship between a discharge frequency and an amplitude characteristic of the discharge type wire saw according to the first embodiment of the present invention.

【図7】本発明の第2実施例にかかる放電式ワイヤソー
の放電周波数と振幅特性との関係を示すグラフである。
FIG. 7 is a graph showing a relationship between a discharge frequency and an amplitude characteristic of a discharge type wire saw according to a second embodiment of the present invention.

【図8】本発明の第3実施例にかかる放電式ワイヤソー
の放電周波数と振幅特性との関係を示すグラフである。
FIG. 8 is a graph showing a relationship between a discharge frequency and an amplitude characteristic of a discharge type wire saw according to a third embodiment of the present invention.

【図9】本発明の第4実施例にかかる放電式ワイヤソー
の放電周波数と振幅特性との関係を示すグラフである。
FIG. 9 is a graph showing a relationship between a discharge frequency and an amplitude characteristic of a discharge type wire saw according to a fourth embodiment of the present invention.

【図10】従来の放電式ワイヤソーの要部を示す平面図
である。
FIG. 10 is a plan view showing a main part of a conventional discharge wire saw.

【符号の説明】[Explanation of symbols]

W 切断用ワイヤ W1,W2,W3,W4,W5 切断ワイヤ部分 E1,E2,E3 電源(電圧印加手段) T1,T2,T3 トランジスタ(電圧印加手段) 24A,24B,26A,26B,27 ガイドローラ 28 ワーク 40 電極ユニット 41 導体ブロック 42 絶縁ブロック 51,52,53 コイル状部分 W Cutting wire W1, W2, W3, W4, W5 Cutting wire portion E1, E2, E3 Power supply (voltage applying means) T1, T2, T3 Transistor (voltage applying means) 24A, 24B, 26A, 26B, 27 Guide roller 28 Work 40 Electrode unit 41 Conductor block 42 Insulation block 51, 52, 53 Coiled part

───────────────────────────────────────────────────── フロントページの続き (72)発明者 川口 桂司 広島市南区宇品東5丁目3番38号 トーヨ ーエイテック株式会社内 Fターム(参考) 3C059 AA01 AB05 BA15 BA21 FB04 ──────────────────────────────────────────────────続 き Continuation of front page (72) Inventor Keiji Kawaguchi 5-3-38 Ujinahigashi, Minami-ku, Hiroshima-shi F-term in TOYO ATEC Corporation (reference) 3C059 AA01 AB05 BA15 BA21 FB04

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 複数のガイドローラに切断用ワイヤを巻
回することにより1本の切断用ワイヤで複数本の切断ワ
イヤ部分を形成し、各切断ワイヤ部分とワークとの間に
電圧を印加しながらワークを各切断ワイヤ部分に対して
切断送りすることにより当該ワークを各切断ワイヤ部分
で放電切断する放電式ワイヤソーであって、各切断ワイ
ヤ部分ごとに、その切断ワイヤ部分とワークとの間に電
圧を断続的に印加する電圧印加手段を設けるとともに、
上記各切断ワイヤ部分同士の間の部分で切断用ワイヤを
コイル状にしたことを特徴とする放電式ワイヤソー。
1. A cutting wire is wound around a plurality of guide rollers to form a plurality of cutting wire portions with one cutting wire, and a voltage is applied between each cutting wire portion and a work. A discharge wire saw that discharges and cuts the work at each cutting wire portion by cutting and sending the work to each cutting wire portion, and for each cutting wire portion, between the cutting wire portion and the work. A voltage applying means for intermittently applying a voltage is provided,
A discharge wire saw, wherein the cutting wire is formed in a coil shape at a portion between the cutting wire portions.
【請求項2】 請求項1記載の放電式ワイヤソーにおい
て、上記各切断ワイヤ部分同士の間の部分で切断用ワイ
ヤを単一のガイドローラに複数回巻回することによりコ
イル状としたことを特徴とする放電式ワイヤソー。
2. The discharge wire saw according to claim 1, wherein a cutting wire is wound a plurality of times around a single guide roller at a portion between the cutting wire portions to form a coil. Discharge type wire saw.
【請求項3】 複数のガイドローラに切断用ワイヤを巻
回することにより1本の切断用ワイヤで複数本の切断ワ
イヤ部分を形成し、各切断ワイヤ部分とワークとの間に
電圧を印加しながらワークを各切断ワイヤ部分に対して
切断送りすることにより当該ワークを各切断ワイヤ部分
で放電切断する放電式ワイヤソーであって、各切断ワイ
ヤ部分ごとに、その切断ワイヤ部分とワークとの間に電
圧を断続的に印加する電圧印加手段を設けるとともに、
上記各切断ワイヤ部分間のワイヤ長を、当該切断ワイヤ
部分に50kHzの周波数で電圧が印加された時に当該印加
電圧とこれに隣接する切断ワイヤ部分に分散される電圧
との比が20%以下となる長さに設定したことを特徴とす
る放電式ワイヤソー。
3. A cutting wire is wound around a plurality of guide rollers to form a plurality of cutting wire portions with one cutting wire, and a voltage is applied between each cutting wire portion and the work. A discharge wire saw that discharges and cuts the work at each cutting wire portion by cutting and sending the work to each cutting wire portion, and for each cutting wire portion, between the cutting wire portion and the work. A voltage applying means for intermittently applying a voltage is provided,
When the wire length between the respective cutting wire portions is set to 20% or less, the ratio between the applied voltage and the voltage distributed to the cutting wire portion adjacent thereto when a voltage is applied to the cutting wire portion at a frequency of 50 kHz. A discharge type wire saw characterized by having a length set.
【請求項4】 請求項3記載の放電式ワイヤソーにおい
て、上記各切断ワイヤ部分間のワイヤ長を、当該切断ワ
イヤ部分に50kHzの周波数で電圧が印加された時に当該
印加電圧とこれに隣接する切断ワイヤ部分に分散される
電圧との比が10%以下となる長さに設定したことを特徴
とする放電式ワイヤソー。
4. The discharge wire saw according to claim 3, wherein the wire length between the respective cutting wire portions is set such that when a voltage is applied to the cutting wire portion at a frequency of 50 kHz, the applied voltage and the cutting adjacent thereto are applied. A discharge type wire saw characterized in that the length of the wire saw is set so that the ratio of the voltage to the wire portion is 10% or less.
【請求項5】 請求項3または4記載の放電式ワイヤソ
ーにおいて、5本以上のガイドローラを具備し、そのう
ちの少なくとも3本のガイドローラに対して切断用ワイ
ヤをジグザグ状に掛け渡したことを特徴とする放電式ワ
イヤソー。
5. The discharge wire saw according to claim 3, further comprising five or more guide rollers, wherein at least three of the guide rollers have a cutting wire wound in a zigzag manner. Discharge type wire saw.
【請求項6】 請求項3〜5のいずれかに記載の放電式
ワイヤソーにおいて、上記ワイヤが鋼線からなることを
特徴とする放電式ワイヤソー。
6. The discharge wire saw according to claim 3, wherein said wire is made of steel wire.
【請求項7】 請求項1〜6のいずれかに記載の放電式
ワイヤソーにおいて、全切断ワイヤ部分を単一の切断用
ワイヤで構成したことを特徴とする放電式ワイヤソー。
7. The discharge type wire saw according to claim 1, wherein the entire cutting wire portion is constituted by a single cutting wire.
【請求項8】 請求項1〜7のいずれかに記載の放電式
ワイヤソーにおいて、電圧印加用の複数の導体を相互に
絶縁した状態で一体化した電極ユニットを備え、この電
極ユニットの各導体を上記各切断ワイヤ部分に接触させ
たことを特徴とする放電式ワイヤソー。
8. The discharge wire saw according to claim 1, further comprising an electrode unit in which a plurality of conductors for voltage application are integrated while being insulated from each other. A discharge type wire saw, wherein the wire saw is in contact with each of the cutting wire portions.
JP10269196A 1998-09-24 1998-09-24 Electric discharge wire saw Pending JP2000094221A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10269196A JP2000094221A (en) 1998-09-24 1998-09-24 Electric discharge wire saw

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10269196A JP2000094221A (en) 1998-09-24 1998-09-24 Electric discharge wire saw

Publications (1)

Publication Number Publication Date
JP2000094221A true JP2000094221A (en) 2000-04-04

Family

ID=17469023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10269196A Pending JP2000094221A (en) 1998-09-24 1998-09-24 Electric discharge wire saw

Country Status (1)

Country Link
JP (1) JP2000094221A (en)

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Publication number Priority date Publication date Assignee Title
JP2006075952A (en) * 2004-09-10 2006-03-23 Mitsubishi Electric Corp Wire electrical discharge machine
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DE112009001483T5 (en) 2008-06-16 2011-04-21 Mitsubishi Electric Corp. A wire electric discharge machining apparatus and a wire electric discharge machining method, a semiconductor wafer manufacturing apparatus and a semiconductor wafer manufacturing method, and a solar cell wafer manufacturing apparatus and a solar cell wafer manufacturing method
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US20120312787A1 (en) * 2010-04-09 2012-12-13 Mitsubishi Electric Corporation Electrical discharge machining apparatus and electrical discharge machining method
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DE102018221394A1 (en) 2017-12-12 2019-06-13 Disco Corporation Wafer-making device and transport tray
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US10886127B2 (en) 2018-03-14 2021-01-05 Disco Corporation Method of producing wafer and apparatus for producing wafer
KR20190108488A (en) 2018-03-14 2019-09-24 가부시기가이샤 디스코 Wafer producing method and wafer producing apparatus
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