DE102008023027B4 - Electrode arrangement for magnetic-field-guided plasma-assisted processes in vacuum - Google Patents
Electrode arrangement for magnetic-field-guided plasma-assisted processes in vacuum Download PDFInfo
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- DE102008023027B4 DE102008023027B4 DE102008023027A DE102008023027A DE102008023027B4 DE 102008023027 B4 DE102008023027 B4 DE 102008023027B4 DE 102008023027 A DE102008023027 A DE 102008023027A DE 102008023027 A DE102008023027 A DE 102008023027A DE 102008023027 B4 DE102008023027 B4 DE 102008023027B4
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- 238000000034 method Methods 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000000919 ceramic Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000005266 casting Methods 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000002689 soil Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 239000002800 charge carrier Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
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- 238000000151 deposition Methods 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000009489 vacuum treatment Methods 0.000 description 2
- 241000093804 Berzelia galpinii Species 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
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- 239000011230 binding agent Substances 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
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- 230000001590 oxidative effect Effects 0.000 description 1
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- 230000035939 shock Effects 0.000 description 1
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- 239000002904 solvent Substances 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/3255—Material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/48—Generating plasma using an arc
- H05H1/50—Generating plasma using an arc and using applied magnetic fields, e.g. for focusing or rotating the arc
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
Vorrichtung (4) zur Entfernung dünner Schichten von der Oberfläche eines Substrats (5) im Vakuum, umfassend eine Transporteinrichtung (41) für Substrate (5) sowie eine Elektrodenanordnung mit einer auf relativem Anodenpotential liegenden, zumindest teilweise parallel zu der zu behandelnden Oberfläche des Substrats (5) angeordneten Gegenelektrode (1), einer Dunkelfeldabschirmung (2) und einem zwischen der Gegenelektrode (1) und der Dunkelfeldabschirmung (2) angeordneten elektrisch isolierenden Element (3), dadurch gekennzeichnet, dass die Elektrodenanordnung vollständig in der Vorrichtung (4) angeordnet ist, die Dunkelfeldabschirmung (2) die vom Substrat (5) abgewandte Seite der Gegenelektrode (1) vollständig überdeckt und das elektrisch isolierende Element (3) zumindest den parallel zur Oberfläche des Substrats (5) angeordneten Teil der Gegenelektrode (1) vollständig überdeckt.Device (4) for removing thin layers from the surface of a substrate (5) in a vacuum, comprising a transport device (41) for substrates (5) and an electrode arrangement with a surface of the substrate to be treated at a relative anode potential, at least partially parallel to the surface to be treated (5) arranged counter electrode (1), a dark field shield (2) and an electrically insulating element (3) arranged between the counter electrode (1) and the dark field shield (2), characterized in that the electrode arrangement is arranged completely in the device (4) is, the dark field shield (2) completely covers the side of the counter electrode (1) facing away from the substrate (5) and the electrically insulating element (3) completely covers at least the part of the counter electrode (1) arranged parallel to the surface of the substrate (5).
Description
Die Erfindung betrifft eine Elektrodenanordnung für magnetfeldgeführte plasmagestützte Prozesse, beispielsweise die Abscheidung dünner Schichten auf der Oberfläche eines Substrats oder die Entfernung dünner Schichten von der Oberfläche eines Substrats im Vakuum.The invention relates to an electrode arrangement for magnetic-field-guided plasma-assisted processes, for example the deposition of thin layers on the surface of a substrate or the removal of thin layers from the surface of a substrate in a vacuum.
In den hier betrachteten Prozessen wird zwischen dem zu behandelnden Substrat und einer Gegenelektrode ein Plasma gezündet, dessen positive Ladungsträger durch den sogenannten Sputtereffekt (Abstäuben, d. h. durch Ionenbombardement induziertes Herausschlagen von Atomen aus der Festkörperoberfläche) die oberen Schichten einer Oberfläche (Beschichtungsmaterial oder Verunreinigungen des Substrats) abtragen. Je nach Verfahren kann die Gegenelektrode gegenüber dem Substrat Kathode oder Anode sein. Bei der Abscheidung dünner Schichten auf der Oberfläche eines Substrats wird das zu zerstäubende Material in Form sogenannter Targets bereitgestellt und auf (relatives) Kathodenpotential gelegt, während das Substrat auf (relativem) Anodenpotential liegt. Demgegenüber liegt bei der Entfernung dünner Schichten von der Oberfläche eines Substrats das Substrat auf (relativem) Kathodenpotential, wobei sich das Plasma zwischen dem Substrat und einer auf (relativem) Anodenpotential liegenden Elektrode (häufig als Anodenplatte oder Anodenkasten ausgeführt) ausbildet. Zur Unterstützung der Plasmabildung wie auch zum gezielten Verstärken der Bewegung der im Plasma enthaltenen Ladungsträger (Ionen) auf die abzutragende Oberfläche (Target beim Beschichten bzw. Substrat beim Abtragen) ist auf der dem Plasma abgewandten Seite dieser Oberfläche eine Magneteinrichtung vorgesehen, die die Bewegung der Ladungsträger beeinflusst und zur Erhöhung der Ladungsträgerdichte führt.In the processes considered here, a plasma is ignited between the substrate to be treated and a counterelectrode whose positive charge carriers by the so-called sputtering effect (dusting, ie by ion bombardment induced striking out of atoms from the solid surface), the upper layers of a surface (coating material or impurities of the substrate ) ablate. Depending on the method, the counter electrode may be cathode or anode with respect to the substrate. In the deposition of thin layers on the surface of a substrate, the material to be sputtered is provided in the form of so-called targets and placed on (relative) cathode potential, while the substrate is at (relative) anode potential. In contrast, when removing thin layers from the surface of a substrate, the substrate is at (relative) cathode potential, with the plasma forming between the substrate and an electrode (often anode plate or anode box) located at (relative) anode potential. In order to support the plasma formation as well as to selectively enhance the movement of the charge carriers (ions) contained in the plasma on the surface to be ablated (target during coating or substrate during ablation) on the side facing away from the plasma of this surface, a magnetic device is provided which controls the movement of Carrier influenced and leads to increase the charge carrier density.
In
Um unerwünschte Entladungen zu verhindern, bei denen die Rückseite der Gegenelektrode ebenfalls zerstäubt wird oder/und eine Verunreinigung der aufgestäubten Schicht verursacht wird, verwendet man eine geerdete Abschirmung, welche die vor der Zerstäubung zu bewahrenden Teile umschließt. Diese sogenannte Dunkelfeldabschirmung muss dabei so dicht an den abzuschirmenden Teilen liegen, dass ihr Abstand geringer ist als die zum Brennen der Entladung nötige Länge des Dunkelraums vor der Gegenelektrode.To prevent unwanted discharges in which the back of the counter electrode is also sputtered or / and contamination of the sputtered layer is caused, a grounded shield is used which encloses the parts to be preserved prior to sputtering. This so-called dark field shield must be so close to the shielded parts that their distance is less than the time necessary for firing the discharge length of the dark space in front of the counter electrode.
Problematisch dabei ist, dass auch zwischen der Gegenelektrode und der Dunkelfeldabschirmung Entladungen auftreten können, die den Prozess gefährden. Diese werden meist durch metallischen Flitter verursacht, der beispielsweise aus abgetragenen Partikeln des Targets oder des Substrats besteht, die in den Zwischenraum zwischen der Gegenelektrode und der Dunkelfeldabschirmung gelangt sind. Um derartige Störungen des ablaufenden Prozesses zu verhindern, wird bei einer Vorrichtung zur Entfernung dünner Schichten von der Oberfläche eines Substrats im Vakuum, die eine Transporteinrichtung für Substrate sowie eine Elektrodenanordnung mit einer auf relativem Anodenpotential liegenden, zumindest teilweise parallel zu der zu behandelnden Oberfläche des Substrats angeordneten Gegenelektrode, einer Dunkelfeldabschirmung und einem zwischen der Gegenelektrode und der Dunkelfeldabschirmung angeordneten elektrisch isolierenden Element umfasst vorgeschlagen, dass die Elektrodenanordnung vollständig in der Vorrichtung angeordnet ist, die Dunkelfeldabschirmung die vom Substrat abgewandte Seite der Gegenelektrode vollständig überdeckt und das elektrisch isolierende Element zumindest den parallel zur Oberfläche des Substrats angeordneten Teil der Gegenelektrode vollständig überdeckt.The problem with this is that even between the counter electrode and the dark field shield discharges may occur that jeopardize the process. These are usually caused by metallic baubles, which consists for example of abraded particles of the target or the substrate, which have come into the space between the counter electrode and the dark field shield. In order to prevent such disturbances of the process running, in a device for removing thin layers from the surface of a substrate in vacuum, which is a transport device for substrates and an electrode assembly having a relative anode potential, at least partially parallel to the surface of the substrate to be treated arranged arranged counterelectrode, a dark field shielding and arranged between the counter electrode and the dark field shield electrically insulating element comprises proposed that the electrode assembly is disposed completely in the device, the dark field shield completely covers the side facing away from the substrate side of the counter electrode and the electrically insulating element at least parallel to Surface of the substrate arranged part of the counter electrode completely covered.
Wenn die Gegenelektrode ein Anodenkasten mit einem Boden und den Boden umschließenden Seitenwänden ist, kann weiter vorgesehen sein, dass die Dunkelfeldabschirmung ein die Außenseite des Anodenkastens umschließender Abschirmungskasten mit einem Boden und den Boden umschließenden Seitenwänden ist, wobei die Böden von Anodenkasten und Abschirmungskasten sowie die Seitenwände von Anodenkasten und Abschirmungskasten zueinander beabstandet sind.Further, when the counter electrode is an anode box having bottom and bottom enclosing sidewalls, the dark field shield may be a shield box enclosing the outside of the anode box with bottom and bottom sidewalls, the bottom of the anode box and shield box, and the sidewalls of anode box and shield box are spaced from each other.
Dabei kann sich das elektrisch isolierende Element vollflächig zumindest zwischen den Böden des Anodenkastens und des Abschirmungskastens erstrecken. Auf diese Weise wird verhindert, dass in den Zwischenraum gelangender Flitter zu einer Entladung zwischen den beiden Böden führt, insbesondere wenn der Anodenkasten innerhalb der Prozessanlage mit nach oben gerichteter Öffnung angeordnet ist. Das elektrisch isolierende Element kann dabei als Einlage ausgeführt sein oder so, dass es den gesamten Zwischenraum zwischen den Böden des Anodenkastens und des Abschirmungskastens ausfüllt.In this case, the electrically insulating element can extend over the entire surface at least between the bottoms of the anode box and the shielding box. In this way it is prevented that in the intermediate space passing tinsel leads to a discharge between the two floors, especially when the anode box is disposed within the process plant with upward opening. The electrically insulating element can be embodied as an insert or so that it fills the entire space between the bottoms of the anode box and the shielding box.
Weiter kann vorgesehen sein, dass sich das elektrisch isolierende Element vollflächig zwischen den Böden und Seitenwänden des Anodenkastens und des Abschirmungskastens erstreckt. Auch hierbei kann das elektrisch isolierende Element eine Einlage sein, deren Dicke geringer ist als der Abstand zwischen den Seitenwänden und den Böden oder so aus geführt sein, dass es den gesamten Zwischenraum zwischen dem Anodenkasten und dem Abschirmungskasten ausfüllt.It can further be provided that the electrically insulating element extends over the entire surface between the bottoms and side walls of the anode box and the shielding box. Again, the electrically insulating member may be an insert, the thickness of which is less than the distance between the side walls and the floors or be performed so that it covers the entire Gap between the anode box and the shield box fills.
Das elektrisch isolierende Element kann aus Keramikpapier oder Keramikvlies gefertigt sein. Diese Materialien basieren auf keramischen Fasern unterschiedlicher Länge und können wie gewöhnliches Papier oder textiles Vlies geschnitten und gefaltet werden. Dieses Fasermaterial ist extrem beständig gegen Alterung, ist temperaturschockresistent und hat eine geringe thermische Leitfähigkeit sowie eine hohe Reißfestigkeit und reversible Formtreue. Es ist beständig in reduzierenden und oxidierenden Gasatmosphären, gegen die meisten Chemikalien und Lösemittel, sowie gegen viele Metallschmelzen, für Einsatztemperaturen bis 1260°C–1650°C geeignet und in verschiedenen Dicken lieferbar.The electrically insulating element can be made of ceramic paper or ceramic fleece. These materials are based on ceramic fibers of different lengths and can be cut and folded like ordinary paper or textile nonwoven. This fiber material is extremely resistant to aging, is temperature shock resistant and has a low thermal conductivity as well as a high tear resistance and reversible dimensional stability. It is resistant in reducing and oxidizing gas atmospheres, against most chemicals and solvents, as well as against many metal melts, for operating temperatures up to 1260 ° C-1650 ° C and available in different thicknesses.
Eine andere Möglichkeit besteht darin, das elektrisch isolierende Element aus einer keramischen Gussmasse zu fertigen, die zur Material- und Gewichtsersparnis aufgeschäumt sein kann. Derartige Gussmassen werden meist aus zwei Komponenten, Pulver und Binder, geliefert und härten chemisch aus.Another possibility is to manufacture the electrically insulating element of a ceramic casting material, which may be foamed for material and weight savings. Such casting compounds are usually supplied from two components, powder and binder, and cure chemically.
Geeignete Grundstoffe für das elektrisch isolierende Element sind beispielsweise Aluminiumoxid, Aluminiumsilikat, Zirkonoxid, Bornitrid, Siliziumdioxid.Suitable base materials for the electrically insulating element are, for example, aluminum oxide, aluminum silicate, zirconium oxide, boron nitride, silicon dioxide.
Nachfolgend wird die beschriebene Elektrodenanordnung anhand von Ausführungsbeispielen und zugehörigen Zeichnungen naher erläutert. Dabei zeigenThe described electrode arrangement will be explained in more detail on the basis of exemplary embodiments and associated drawings. Show
In
Auf dem Boden
Dazu wird das Substrat
Der Abschirmungskasten
Der Zwischenraum zwischen dem Anodenkasten
BezugszeichenlisteLIST OF REFERENCE NUMBERS
- 11
- Gegenelektrode, AnodenkastenCounter electrode, anode box
- 1111
- Bodenground
- 1212
- SeitenwandSide wall
- 1313
- Verbindungsleitungconnecting line
- 1414
- Isolationsrohrinsulating tube
- 1515
- Stromversorgungpower supply
- 22
- Dunkelfeldabschirmung, AbschirmungskastenDark field shield, shield box
- 2121
- Bodenground
- 2222
- SeitenwandSide wall
- 33
- elektrisch isolierendes Elementelectrically insulating element
- 44
- Vorrichtung zur VakuumbehandlungApparatus for vacuum treatment
- 4141
- Transporteinrichtungtransport means
- 4242
- Magneteinrichtungmagnetic device
- 55
- Substratsubstratum
- 66
- Plasmaentladungplasma discharge
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008023027A DE102008023027B4 (en) | 2008-05-09 | 2008-05-09 | Electrode arrangement for magnetic-field-guided plasma-assisted processes in vacuum |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008023027A DE102008023027B4 (en) | 2008-05-09 | 2008-05-09 | Electrode arrangement for magnetic-field-guided plasma-assisted processes in vacuum |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE102008023027A1 DE102008023027A1 (en) | 2009-11-19 |
| DE102008023027B4 true DE102008023027B4 (en) | 2012-06-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| DE102008023027A Expired - Fee Related DE102008023027B4 (en) | 2008-05-09 | 2008-05-09 | Electrode arrangement for magnetic-field-guided plasma-assisted processes in vacuum |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE102008023027B4 (en) |
Families Citing this family (20)
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| US9458536B2 (en) | 2009-07-02 | 2016-10-04 | Sio2 Medical Products, Inc. | PECVD coating methods for capped syringes, cartridges and other articles |
| US11624115B2 (en) | 2010-05-12 | 2023-04-11 | Sio2 Medical Products, Inc. | Syringe with PECVD lubrication |
| US9878101B2 (en) | 2010-11-12 | 2018-01-30 | Sio2 Medical Products, Inc. | Cyclic olefin polymer vessels and vessel coating methods |
| US9272095B2 (en) | 2011-04-01 | 2016-03-01 | Sio2 Medical Products, Inc. | Vessels, contact surfaces, and coating and inspection apparatus and methods |
| WO2013071138A1 (en) | 2011-11-11 | 2013-05-16 | Sio2 Medical Products, Inc. | PASSIVATION, pH PROTECTIVE OR LUBRICITY COATING FOR PHARMACEUTICAL PACKAGE, COATING PROCESS AND APPARATUS |
| US11116695B2 (en) | 2011-11-11 | 2021-09-14 | Sio2 Medical Products, Inc. | Blood sample collection tube |
| EP2846755A1 (en) | 2012-05-09 | 2015-03-18 | SiO2 Medical Products, Inc. | Saccharide protective coating for pharmaceutical package |
| US20150297800A1 (en) | 2012-07-03 | 2015-10-22 | Sio2 Medical Products, Inc. | SiOx BARRIER FOR PHARMACEUTICAL PACKAGE AND COATING PROCESS |
| US9664626B2 (en) | 2012-11-01 | 2017-05-30 | Sio2 Medical Products, Inc. | Coating inspection method |
| DE102012110927A1 (en) | 2012-11-14 | 2014-05-15 | Von Ardenne Anlagentechnik Gmbh | Vacuum processing of substrates for treating substrate, comprises igniting magnetron discharge by supplying e.g. inert working gas, displacing first plasma zone, igniting additional magnetron discharge and concentrating second plasma zone |
| EP2920567B1 (en) | 2012-11-16 | 2020-08-19 | SiO2 Medical Products, Inc. | Method and apparatus for detecting rapid barrier coating integrity characteristics |
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| US9764093B2 (en) | 2012-11-30 | 2017-09-19 | Sio2 Medical Products, Inc. | Controlling the uniformity of PECVD deposition |
| WO2014134577A1 (en) | 2013-03-01 | 2014-09-04 | Sio2 Medical Products, Inc. | Plasma or cvd pre-treatment for lubricated pharmaceutical package, coating process and apparatus |
| US9937099B2 (en) | 2013-03-11 | 2018-04-10 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging with low oxygen transmission rate |
| KR102167557B1 (en) | 2013-03-11 | 2020-10-20 | 에스아이오2 메디컬 프로덕츠, 인크. | Coated Packaging |
| US9863042B2 (en) | 2013-03-15 | 2018-01-09 | Sio2 Medical Products, Inc. | PECVD lubricity vessel coating, coating process and apparatus providing different power levels in two phases |
| EP3122917B1 (en) | 2014-03-28 | 2020-05-06 | SiO2 Medical Products, Inc. | Antistatic coatings for plastic vessels |
| CA2995225C (en) | 2015-08-18 | 2023-08-29 | Sio2 Medical Products, Inc. | Pharmaceutical and other packaging with low oxygen transmission rate |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4169031A (en) * | 1978-01-13 | 1979-09-25 | Polyohm, Inc. | Magnetron sputter cathode assembly |
| US4422896A (en) * | 1982-01-26 | 1983-12-27 | Materials Research Corporation | Magnetically enhanced plasma process and apparatus |
| DE3738845A1 (en) * | 1987-11-16 | 1989-05-24 | Leybold Ag | SPRAYING CATODE ACCORDING TO THE MAGNETRON PRINCIPLE |
| DD292124A5 (en) * | 1990-02-08 | 1991-07-18 | Veb Elektromat Dresden,De | DEVICE FOR CLEANING WORKSTICK SURFACES BY CATODE SCREENING |
| DE4235064A1 (en) * | 1992-10-17 | 1994-04-21 | Leybold Ag | Device for generating a plasma by means of sputtering |
| DE4336830A1 (en) * | 1993-10-28 | 1995-05-04 | Leybold Ag | Plasma sputtering installation with microwave assistance |
| JPH08167594A (en) * | 1994-12-15 | 1996-06-25 | Nissin Electric Co Ltd | Plasma treatment device |
-
2008
- 2008-05-09 DE DE102008023027A patent/DE102008023027B4/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4169031A (en) * | 1978-01-13 | 1979-09-25 | Polyohm, Inc. | Magnetron sputter cathode assembly |
| US4422896A (en) * | 1982-01-26 | 1983-12-27 | Materials Research Corporation | Magnetically enhanced plasma process and apparatus |
| DE3738845A1 (en) * | 1987-11-16 | 1989-05-24 | Leybold Ag | SPRAYING CATODE ACCORDING TO THE MAGNETRON PRINCIPLE |
| DD292124A5 (en) * | 1990-02-08 | 1991-07-18 | Veb Elektromat Dresden,De | DEVICE FOR CLEANING WORKSTICK SURFACES BY CATODE SCREENING |
| DE4235064A1 (en) * | 1992-10-17 | 1994-04-21 | Leybold Ag | Device for generating a plasma by means of sputtering |
| DE4336830A1 (en) * | 1993-10-28 | 1995-05-04 | Leybold Ag | Plasma sputtering installation with microwave assistance |
| JPH08167594A (en) * | 1994-12-15 | 1996-06-25 | Nissin Electric Co Ltd | Plasma treatment device |
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|---|---|
| DE102008023027A1 (en) | 2009-11-19 |
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