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DE10140606B8 - Integriertes Speicher- und Sensierelement auf Basis des GMR-Effektes - Google Patents

Integriertes Speicher- und Sensierelement auf Basis des GMR-Effektes Download PDF

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Publication number
DE10140606B8
DE10140606B8 DE10140606A DE10140606A DE10140606B8 DE 10140606 B8 DE10140606 B8 DE 10140606B8 DE 10140606 A DE10140606 A DE 10140606A DE 10140606 A DE10140606 A DE 10140606A DE 10140606 B8 DE10140606 B8 DE 10140606B8
Authority
DE
Germany
Prior art keywords
sensing element
element based
integrated memory
gmr effect
gmr
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10140606A
Other languages
English (en)
Other versions
DE10140606C1 (de
Inventor
Peter Schmollngruber
Henrik Dr. Siegle
Andreas Dr. Huetten
Tobias Hempel
Lucinski
Doc.Dr.hab.
Guenter Prof. Dr. Reiss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to DE10140606A priority Critical patent/DE10140606B8/de
Application granted granted Critical
Publication of DE10140606C1 publication Critical patent/DE10140606C1/de
Publication of DE10140606B8 publication Critical patent/DE10140606B8/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Hall/Mr Elements (AREA)
DE10140606A 2001-08-18 2001-08-18 Integriertes Speicher- und Sensierelement auf Basis des GMR-Effektes Expired - Fee Related DE10140606B8 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE10140606A DE10140606B8 (de) 2001-08-18 2001-08-18 Integriertes Speicher- und Sensierelement auf Basis des GMR-Effektes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10140606A DE10140606B8 (de) 2001-08-18 2001-08-18 Integriertes Speicher- und Sensierelement auf Basis des GMR-Effektes

Publications (2)

Publication Number Publication Date
DE10140606C1 DE10140606C1 (de) 2003-05-08
DE10140606B8 true DE10140606B8 (de) 2005-03-31

Family

ID=7695905

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10140606A Expired - Fee Related DE10140606B8 (de) 2001-08-18 2001-08-18 Integriertes Speicher- und Sensierelement auf Basis des GMR-Effektes

Country Status (1)

Country Link
DE (1) DE10140606B8 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7436697B2 (en) 2003-03-31 2008-10-14 Matsushita Electric Industrial Co., Ltd. Memory cell, memory using the memory cell, memory cell manufacturing method, and memory recording/reading method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004032482B4 (de) 2004-07-05 2008-01-31 Infineon Technologies Ag Sensor und Verfahren zum Erfassen einer Verformung

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19843350A1 (de) * 1998-09-22 2000-03-23 Bosch Gmbh Robert Elektronisches Bauelement
DE10105894A1 (de) * 2001-02-09 2002-09-05 Bosch Gmbh Robert Magnetisch sensitive Schichtanordnung

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19843350A1 (de) * 1998-09-22 2000-03-23 Bosch Gmbh Robert Elektronisches Bauelement
DE10105894A1 (de) * 2001-02-09 2002-09-05 Bosch Gmbh Robert Magnetisch sensitive Schichtanordnung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
http://www.research.ibm.com/resources/news/ 20001207_mramimages.shtl. (Stand 18.08.2001) *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7436697B2 (en) 2003-03-31 2008-10-14 Matsushita Electric Industrial Co., Ltd. Memory cell, memory using the memory cell, memory cell manufacturing method, and memory recording/reading method

Also Published As

Publication number Publication date
DE10140606C1 (de) 2003-05-08

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Legal Events

Date Code Title Description
8100 Publication of patent without earlier publication of application
8304 Grant after examination procedure
8364 No opposition during term of opposition
8381 Inventor (new situation)

Inventor name: LUCINSKI, TADEUSC

Inventor name: HUETTEN, ANDREAS, DR., 33619 BIELEFELD, DE

Inventor name: SCHMOLLNGRUBER, PETER, 71134 AIDLINGEN, DE

Inventor name: REISS, GUENTER, PROF. DR., 33602 BIELEFELD, DE

Inventor name: HEMPEL, TOBIAS, 33611 BIELEFELD, DE

Inventor name: SIEGLE, HENRIK, DR., 71229 LEONBERG, DE

Inventor name: DR.DR.HAB., POZNAN, PL

8381 Inventor (new situation)

Inventor name: SIEGLE, HENRIK, DR., 71229 LEONBERG, DE

Inventor name: HEMPEL, TOBIAS, 33611 BIELEFELD, DE

Inventor name: SCHMOLLNGRUBER, PETER, 71134 AIDLINGEN, DE

Inventor name: HUETTEN, ANDREAS, DR., 33619 BIELEFELD, DE

Inventor name: REISS, GUENTER, PROF. DR., 33602 BIELEFELD, DE

Inventor name: DOC.DR.HAB., POZNAN, PL

Inventor name: LUCINSKI, TADEUSC

8396 Reprint of erroneous front page
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20130301