DE10084887T1 - Parallele Platten-Diode - Google Patents

Parallele Platten-Diode

Info

Publication number: DE10084887T1
Authority: DE; Germany
Prior art keywords: parallel plate; plate diode; diode; parallel; plate
Prior art date: 1999-08-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

DE10084887T

Other languages

English (en)

Inventor

Yelin Xu

Ling Jiang

Qiang Xu

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Institute of Biophysics of CAS

Original Assignee

Institute of Biophysics of CAS

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1999-08-30

Filing date

2000-03-29

Publication date

2002-09-12

2000-03-29 Application filed by Institute of Biophysics of CAS filed Critical Institute of Biophysics of CAS

2002-09-12 Publication of DE10084887T1 publication Critical patent/DE10084887T1/de

Status Withdrawn legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes

DE10084887T 1999-08-30 2000-03-29 Parallele Platten-Diode Withdrawn DE10084887T1 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
CN99118929		1999-08-30
PCT/CN2000/000068 WO2001017027A1 (en)	1999-08-30	2000-03-29	A parallel plate diode

Publications (1)

Publication Number	Publication Date
DE10084887T1 true DE10084887T1 (de)	2002-09-12

Family

ID=5280594

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE10084887T Withdrawn DE10084887T1 (de)	1999-08-30	2000-03-29	Parallele Platten-Diode

Country Status (8)

Country	Link
US (1)	US6768177B1 (de)
EP (1)	EP1211732A4 (de)
JP (1)	JP2003508918A (de)
AU (1)	AU3549600A (de)
DE (1)	DE10084887T1 (de)
GB (1)	GB2369726B (de)
RU (1)	RU2212079C1 (de)
WO (1)	WO2001017027A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB0611594D0 (en) *	2006-06-13	2006-07-19	Taylor Gareth A	Electrical switching device and method of embedding catalytic material in a diamond substrate
IT1394649B1 (it) *	2009-06-01	2012-07-05	St Microelectronics Srl	Fotodiodo con contatto schottky sulle pareti di trincee parallele e relativo metodo di fabbricazione
US20150130067A1 (en) *	2013-11-11	2015-05-14	Richtek Technology Corporation	Ohmic contact structure and semiconductor device having the same
RU2713908C2 (ru) *	2018-11-23	2020-02-11	Общество С Ограниченной Ответственностью "Кубик Мкм" (Ооо "Кубик-Мкм")	Микроконтакт для поверхностного монтажа и массив микроконтактов
JP7337739B2 (ja) *	2020-03-19	2023-09-04	株式会社東芝	半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB945742A (de) *	1959-02-06		Texas Instruments Inc
US3987305A (en)	1975-06-10	1976-10-19	The United States Of America As Represented By The Secretary Of The Army	Low self-bias variable gap diode
US4947104A (en) *	1989-01-19	1990-08-07	Stephen C. Pyke	Device and method for detection of fluid concentration utilizing charge storage in a MIS diode
US4990988A (en) *	1989-06-09	1991-02-05	The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration	Laterally stacked Schottky diodes for infrared sensor applications
CA2064146C (en)	1991-03-28	1997-08-12	Hisashi Ariyoshi	Schottky barrier diode and a method of manufacturing thereof
US5365102A (en) *	1993-07-06	1994-11-15	North Carolina State University	Schottky barrier rectifier with MOS trench
DE19723176C1 (de) *	1997-06-03	1998-08-27	Daimler Benz Ag	Leistungshalbleiter-Bauelement und Verfahren zu dessen Herstellung

2000
- 2000-03-29 AU AU35496/00A patent/AU3549600A/en not_active Abandoned
- 2000-03-29 WO PCT/CN2000/000068 patent/WO2001017027A1/zh not_active Ceased
- 2000-03-29 GB GB0203041A patent/GB2369726B/en not_active Expired - Fee Related
- 2000-03-29 RU RU2002107778/28A patent/RU2212079C1/ru not_active IP Right Cessation
- 2000-03-29 EP EP00914019A patent/EP1211732A4/de not_active Withdrawn
- 2000-03-29 US US10/049,486 patent/US6768177B1/en not_active Expired - Lifetime
- 2000-03-29 JP JP2001520473A patent/JP2003508918A/ja not_active Withdrawn
- 2000-03-29 DE DE10084887T patent/DE10084887T1/de not_active Withdrawn

Also Published As

Publication number	Publication date
US6768177B1 (en)	2004-07-27
RU2002107778A (ru)	2004-03-20
JP2003508918A (ja)	2003-03-04
WO2001017027A1 (en)	2001-03-08
GB2369726A (en)	2002-06-05
AU3549600A (en)	2001-03-26
EP1211732A4 (de)	2005-08-10
EP1211732A1 (de)	2002-06-05
GB2369726B (en)	2004-01-21
RU2212079C1 (ru)	2003-09-10
GB0203041D0 (en)	2002-03-27

Publication	Publication Date	Title
DE69917850D1 (de)	2004-07-15	Batterie-Verbindungsplatte
DE69926157D1 (de)	2005-08-25	Plattenverbindungsvorrichtungen
DE60034405D1 (de)	2007-05-31	Diodenleuchte
EE200100374A (et)	2002-12-16	1-heterotsükliga asendatud diarüülamiinid
DE59905573D1 (de)	2003-06-18	Polsterträger
DE59900456D1 (de)	2002-01-10	Druckplattenzylinder
DE50000494D1 (de)	2002-10-17	Funktionsträgeranordnung
DE50010487D1 (de)	2005-07-14	Plattenreaktor
DE60136667D1 (de)	2009-01-08	Präzisionsträgerplatte
DE10083270D2 (de)	2002-01-31	Belagträgerplatte
DE60024171D1 (de)	2005-12-29	Plattenbehälter
DE59904914D1 (de)	2003-05-15	Plattenkette
ID25700A (id)	2000-11-02	Unit penggerak piringan
DE10084887T1 (de)	2002-09-12	Parallele Platten-Diode
EP1026754A4 (de)	2000-08-09	Diode
ATA1462001A (de)	2002-08-15	Plattenelement
DE60111418D1 (de)	2005-07-14	Verbesserter plattenhalter
ID24305A (id)	2000-07-13	Perangkat piringan
FIU20010494U0 (fi)	2001-12-28	Kiinnityslevy
DE60038397D1 (de)	2008-04-30	Plattengerät
FI20040440L (fi)	2004-03-23	Vastalevy
DE60206986D1 (de)	2005-12-08	Befestigungsplatte
NO20000295D0 (no)	2000-01-21	Monteringsplate
SE9902858D0 (sv)	1999-08-05	Ljusskylt
SE9904090D0 (sv)	1999-11-12	Märkbricka

Legal Events

Date	Code	Title	Description
2007-06-28	8141	Disposal/no request for examination