CN223816116U - Solar comprehensive utilization system and photo-thermal power station provided with same - Google Patents

Abstract

The utility model provides a solar comprehensive utilization system and a photo-thermal power station with the same. The solar comprehensive utilization system comprises a semitransparent photovoltaic cell, a photo-thermal reflector, a spectrum frequency divider, an opaque photovoltaic cell and a photo-thermal collector, wherein the semitransparent photovoltaic cell absorbs 200-800nm ultraviolet light and visible light in a solar spectrum, the photo-thermal reflector is positioned below the semitransparent photovoltaic cell and reflects residual spectrum which is not absorbed by the semitransparent photovoltaic cell, the spectrum frequency divider divides 800-1200nm near infrared light and 1200nm far infrared light in the residual spectrum to the opaque photovoltaic cell and the photo-thermal collector respectively, the opaque photovoltaic cell utilizes the near infrared light to carry out photovoltaic power generation, and the photo-thermal collector utilizes the far infrared light to carry out photo-thermal power generation. The system disclosed by the utility model has high comprehensive solar energy utilization efficiency, and can be widely applied to tower type, groove type, disc type, fresnel type and other photo-thermal power stations.

Description

Solar comprehensive utilization system and photo-thermal power station provided with same

Technical Field

The utility model relates to the technical field of solar energy utilization, in particular to a solar energy comprehensive utilization system and a photo-thermal power station with the same.

Background

The solar energy utilization mode mainly comprises photovoltaic power generation and photo-thermal power generation. Photovoltaic power generation directly converts light energy into electric energy by utilizing photovoltaic effect of a semiconductor interface, has the advantages of safety, reliability, short construction period and the like, is limited by band gap limitation and temperature effect of materials, and generally has low energy conversion efficiency. The photo-thermal power generation converts sunlight into heat energy through the heat collector, has the advantages of stable power output, flexible energy storage, adaptability to large-scale power grid adjustment and the like, but has higher initial construction cost and stronger regional dependence on concentrated light resources. At present, a single photovoltaic or photo-thermal system is difficult to cover the whole solar spectrum, light in a partial wave band cannot be fully utilized, and the comprehensive utilization efficiency of solar energy is low.

In order to further improve the comprehensive utilization efficiency of solar energy, it is considered to combine photovoltaic power generation with a photo-thermal power generation technology, thereby fully utilizing the wide spectral range of sunlight. In addition, the combination mode of the photovoltaic cell and the photo-thermal reflecting mirror has larger limitation, and lacks flexible structural design to adapt to different light path requirements, so that the synergy between the photovoltaic cell and the photo-thermal reflecting mirror cannot be optimized well, and the improvement range of the comprehensive utilization efficiency of solar energy is limited.

In view of this, the present utility model has been made.

Disclosure of utility model

The utility model aims to provide a solar comprehensive utilization system and a photo-thermal power station provided with the same, and the solar comprehensive utilization efficiency of the system is high, so that the system can be widely applied to tower type, groove type, disc type, fresnel type and other photo-thermal power stations.

The utility model provides a solar comprehensive utilization system which comprises a semitransparent photovoltaic cell, a photo-thermal reflector, a spectrum frequency divider, an opaque photovoltaic cell and a photo-thermal collector, wherein the semitransparent photovoltaic cell absorbs ultraviolet light and visible light with the wavelength of 200-800nm in a solar spectrum, the photo-thermal reflector is positioned below the semitransparent photovoltaic cell and reflects residual spectrum which is not absorbed by the semitransparent photovoltaic cell, the spectrum frequency divider divides near infrared light with the wavelength of 800-1200nm and far infrared light with the wavelength of more than 1200nm in the residual spectrum to the opaque photovoltaic cell and the photo-thermal collector respectively, the opaque photovoltaic cell utilizes the near infrared light to carry out photovoltaic power generation, and the photo-thermal collector utilizes the far infrared light to carry out photo-thermal power generation.

Further, the semitransparent photovoltaic cell is provided with a substrate, a first transparent conductive layer, a first transmission layer, a light absorption layer, a second transmission layer, a second transparent conductive layer and a packaging layer from bottom to top in sequence, wherein the first transmission layer and the second transmission layer are hole transmission layers or electron transmission layers.

Further, the photo-thermal reflector comprises a metal coating and a dielectric stack layer arranged on the surface of the metal coating, wherein the dielectric stack layer comprises a plurality of silicon dioxide layers and titanium dioxide layers which are alternately stacked.

Further, the thickness of the silicon dioxide layer is 50-200nm, the number of layers is 3-8, the thickness of the titanium dioxide layer is 30-120nm, and the number of layers is 3-8.

Further, the spectrum divider comprises a substrate and a dielectric film layer arranged on the surface of the substrate, wherein the dielectric film layer comprises a plurality of layers of high-refractive-index material layers and low-refractive-index material layers which are alternately stacked.

Further, the single-layer thickness of the high refractive index material layer is 30-300nm, the number of layers is 5-25, the single-layer thickness of the low refractive index material layer is 50-500nm, and the number of layers is 5-25.

Further, the opaque photovoltaic cell includes a substrate and a surface passivation layer disposed on a surface of the substrate.

Further, the semitransparent photovoltaic cell is coupled on the surface of the photo-thermal reflecting mirror to form a laminated structure, the spectrum frequency divider is arranged at the front end of the laminated structure, the opaque photovoltaic cell is arranged at the focus position of near infrared light reflected by the spectrum frequency divider, and the photo-thermal collector is arranged at the focus position of far infrared light transmitted by the spectrum frequency divider.

Further, an angle adjusting bracket is arranged at the bottom of the laminated structure and/or the opaque photovoltaic cell.

The utility model also provides a photo-thermal power station which is provided with the solar energy comprehensive utilization system, and the photo-thermal power station is a tower type photo-thermal power station, a groove type photo-thermal power station, a disc type photo-thermal power station or a Fresnel type photo-thermal power station.

The solar comprehensive utilization system is coupled with the structures of the semitransparent photovoltaic cell, the photo-thermal reflector, the spectrum divider, the opaque photovoltaic cell, the photo-thermal collector and the like, ultraviolet light and visible light in the range of 200-800nm in solar spectrum are absorbed by the semitransparent photovoltaic cell, the photoelectric conversion efficiency can reach 18-22%, near infrared light of 800-1200nm in the residual spectrum which is not absorbed is guided to the opaque photovoltaic cell to carry out photovoltaic power generation, the photoelectric conversion efficiency can reach 20-25%, far infrared light of more than 1200nm is guided to the photo-thermal collector to carry out photo-thermal power generation, the photo-thermal conversion efficiency can reach 70-80%, the whole solar comprehensive utilization system realizes the maximum utilization of energy in different wave bands of sunlight through the separation design of photovoltaic and photo-thermal, the loss caused by spectrum overlapping is reduced, and the solar comprehensive utilization efficiency is improved to 60-67% and is far beyond a single photovoltaic or photo-thermal system.

The spectrum frequency divider in the solar comprehensive utilization system has the separation efficiency of more than 85% aiming at a target wavelength range, obviously improves the light energy distribution accuracy, is suitable for tower type, groove type, disc type, fresnel type and other photo-thermal power stations, can reduce the system volume and light loss, has strong adaptability, and in addition, the bracket design allows the dynamic adjustment of the angle of the component, so that the light incidence angle is always in the optimal state, and the light energy utilization rate can be further improved by about 5-10% in high-sunlight areas. Under the condition of the same area, the power generation capacity of the solar comprehensive utilization system is improved by 20-40% compared with that of a single photovoltaic system, so that the additional land resources and equipment investment required by separate construction of the photo-thermal system and the photovoltaic system are reduced, the emission of 50 tons of carbon dioxide per year (taking 1MW installed capacity as a benchmark) can be reduced, and the sustainable development requirement of green energy sources is met.

Drawings

In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present utility model, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.

FIG. 1 is a side view of a solar energy comprehensive utilization system;

Fig. 2 is a top view of the solar energy comprehensive utilization system.

Reference numerals illustrate:

The solar photovoltaic module comprises a semitransparent photovoltaic cell, a photothermal reflector, a spectral frequency divider, an opaque photovoltaic cell, a photothermal heat collector, a support, a solar light, an infrared light, a near infrared light, a far infrared light and a laminated structure, wherein the semitransparent photovoltaic cell, the photothermal reflector, the spectral frequency divider, the opaque photovoltaic cell, the photothermal heat collector, the support, the solar light, the infrared light, the far infrared light and the laminated structure.

Detailed Description

It should be noted that the following detailed description is illustrative and is intended to provide further explanation of the application. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.

It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the present application. As used herein, the singular forms also include the plural unless the context clearly indicates otherwise, and furthermore, it is to be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof.

The technical solutions of the present utility model will be clearly and completely described in connection with the embodiments, and it is apparent that the described embodiments are some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.

Example 1

Referring to fig. 1 and 2, the solar energy comprehensive utilization system of the embodiment includes a semitransparent photovoltaic cell 1, a photo-thermal reflecting mirror 2, a spectrum divider 3, an opaque photovoltaic cell 4 and a photo-thermal collector 5, wherein the semitransparent photovoltaic cell 1 absorbs ultraviolet light and visible light of 200-800nm in sunlight 8, the photo-thermal reflecting mirror 2 is positioned below the semitransparent photovoltaic cell 1 and reflects a residual spectrum (infrared light 9) which is not absorbed by the semitransparent photovoltaic cell 1, the spectrum divider 3 divides near infrared light 10 of 800-1200nm and far infrared light 11 of more than 1200nm in the residual spectrum to the opaque photovoltaic cell 4 and the photo-thermal collector 5 respectively, the opaque photovoltaic cell 4 performs photovoltaic power generation by using near infrared light 10, and the photo-thermal collector 5 performs photo-thermal power generation by using the far infrared light 11.

The semitransparent photovoltaic cell 1 is provided with a substrate, a first transparent conductive layer, a first transmission layer, a light absorption layer, a second transmission layer, a second transparent conductive layer and a packaging layer from bottom to top in sequence, wherein the first transmission layer and the second transmission layer are hole transmission layers or electron transmission layers. In this embodiment, the translucent photovoltaic cell 1 is provided with a substrate, a first transparent conductive layer, a hole transport layer, a light absorption layer, an electron transport layer, a second transparent conductive layer, and an encapsulation layer in this order from bottom to top.

Specifically, the substrate may be a flexible substrate or a high-permeability rigid glass, and the thickness of the substrate may be 0.1 to 2mm, for example, 0.2 to 2mm. In this example, a highly transparent flexible substrate having a thickness of 0.2mm was used as the substrate.

The transparent conductive layer can be prepared from ATO (tin antimony oxide), ITO (indium tin oxide) and other materials by radio frequency magnetron sputtering, and has a thickness of 50-300nm, such as 150-300nm, and a transmittance of higher than 90%. In this example, a radio frequency magnetron sputtering method was used to deposit ITO (indium tin oxide), followed by heat treatment at 150 ℃ for 10min, to produce a first transparent conductive layer and a second transparent conductive layer having a thickness of 150nm and a transmittance of more than 90%.

The light absorbing layer may be prepared by using perovskite-based perovskite layers such as lead methyl ammonium iodide MAPbI ₃, lead methyl ammonium bromide (MAPbBr ₃)、CsFA-MAPb(Br_xI_1-x)₃, etc.), by solution spin coating, vacuum co-evaporation, doctor blading, etc., and may have a thickness of 300-700nm, for example 500-700nm, and may be combined with surface passivation techniques such as long chain amine salt passivation to achieve high photoelectric conversion efficiency and transmittance.

The electron transport layer can be made of [6,6] -phenyl-C ₆₁ -methyl butyrate (C60), snO ₂、TiO₂ and other materials by sol-gel method, vacuum evaporation and other methods, and the thickness of the electron transport layer can be 20-100nm, for example 30-100nm. In this example, methyl [6,6] -phenyl-C ₆₁ -butyrate (C60) was deposited on the light-absorbing layer by spin-coating with a solution, followed by annealing at 70℃for 10min, to prepare an electron-transport layer having a thickness of 30 nm.

The hole transport layer may be made of polymer materials PEDOT PSS (poly (3, 4-ethylenedioxythiophene) -polystyrene sulfonate), P3HT (poly (3-hexylthiophene)), etc., organic small molecular materials Spiro-OMeTAD (2, 2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene), PTAA (poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine ]), etc., and inorganic materials NiOx, cuSCN, etc., by sol-gel method, vacuum evaporation, etc., and the thickness of the hole transport layer may be 20-100nm, for example 40-100nm. In this example, poly (3, 4-ethylenedioxythiophene) -polystyrene sulfonate was deposited on the first transparent conductive layer by a solution spin coating method, followed by an annealing treatment at 80 ℃ for 10min, to prepare a hole transport layer having a thickness of 40 nm.

The encapsulation layer can adopt flexible high light-transmitting polymer (such as PEVA, PET, PI and the like) and is encapsulated by vacuum lamination process, the thickness of the encapsulation layer can be 10-9000 mu m, such as 250-500 mu m, and the encapsulation layer is mainly used for ensuring environmental stability and mechanical flexibility. In this example, ethylene-vinyl acetate (PEVA) was thermally pressed on the surface of the second transparent conductive layer in vacuum using a lamination process, and thermally pressed at 120 ℃ for 10 minutes, to prepare an encapsulation layer having a thickness of 200 μm.

The translucent photovoltaic cell 1 of this embodiment has an absorptivity of 90% for ultraviolet light and visible light in the 200-800nm wavelength band and a transmissivity of 90% for infrared light greater than 800 nm.

The photo-thermal mirror 2 includes a metal coating layer and a dielectric stack layer disposed on a surface of the metal coating layer. The metal coating can be prepared from high-reflectivity metal (such as silver and aluminum) by magnetron sputtering or vapor deposition, and the thickness of the metal coating is 100-300nm. In this example, a reflective surface having a uniform curvature was fabricated using a high precision embossing technique with a surface roughness (Ra) of less than 10nm, and then a silver thin film was uniformly deposited on the reflective surface using a vacuum evaporation process to form a metal coating having a thickness of 100 nm.

The dielectric lamination comprises a plurality of silicon dioxide layers and titanium dioxide layers which are alternately laminated, wherein the silicon dioxide layers and the titanium dioxide layers which are alternately laminated can be deposited by an electron beam evaporation or sputtering method, the single-layer thickness of the silicon dioxide layers can be 50-200nm, the number of layers can be 3-8, the single-layer thickness of the titanium dioxide layers can be 30-120nm, and the number of layers can be 3-8. In the embodiment, a chemical vapor deposition method is adopted to sequentially and alternately deposit a silicon dioxide layer and a titanium dioxide layer on the surface of the metal coating, the single-layer thickness of the silicon dioxide layer is 50nm, the number of layers is 8, the single-layer thickness of the titanium dioxide layer is 30nm, the number of layers is 8, and the dielectric stack with a reflection peak of 800-1200nm is prepared.

The photo-thermal mirror 2 of this embodiment has a reflectance of 96% for near infrared light 10 of 800-1200nm and far infrared light 11 of more than 1200 nm.

The spectrum divider 3 is mainly used for precisely dividing near infrared light 10 with the wavelength of 800-1200nm and far infrared light 11 with the wavelength of more than 1200nm in the residual spectrum to realize spectrum separation, so that the near infrared light 10 is reflected to the opaque photovoltaic cell 4 for photovoltaic power generation, and the far infrared light 11 is transmitted to the photo-thermal collector 5 for photo-thermal utilization.

The spectrum divider 3 comprises a substrate and a dielectric film layer arranged on the surface of the substrate, wherein the substrate can be made of high-temperature resistant quartz glass or borosilicate glass, and in the embodiment, the substrate is made of high-temperature resistant quartz glass.

The dielectric film layer comprises a plurality of layers of high-refractive-index material layers and low-refractive-index material layers which are alternately stacked, wherein the high-refractive-index material layers can adopt TiO ₂ layers and/or Ta ₂O₅ layers, the single-layer thickness of the high-refractive-index material layers can be 30-300nm, the number of layers can be 5-25 layers, the low-refractive-index material layers can adopt SiO ₂ layers and/or MgF ₂ layers, the single-layer thickness of the low-refractive-index material layers can be 50-500nm, and the number of layers can be 5-25 layers. In the embodiment, ta ₂O₅ layers and MgF ₂ layers are alternately deposited on a substrate in turn through an electron beam evaporation mode, the single-layer thickness of the Ta ₂O₅ layers is 30nm, the number of layers is 25, the single-layer thickness of the MgF ₂ layers is 50nm, the number of layers is 25, and the dielectric film with the reflection peak of 400-750nm is prepared.

The spectral divider 3 of this embodiment has a reflectance of 90% for near infrared light 10 of 800-1200nm and a transmittance of 85% for far infrared light 11 of more than 1200 nm.

The opaque photovoltaic cell 4 is mainly used for absorbing 800-1200nm near infrared light 10 to carry out photovoltaic power generation, and can be made of materials such as crystalline silicon batteries, gaAs batteries and the like. Specifically, the opaque photovoltaic cell 4 comprises a substrate and a surface passivation layer arranged on the surface of the substrate, wherein the substrate can adopt a high-efficiency crystalline silicon cell (PERC, TOPCon, etc.) with the efficiency exceeding 23%, the surface passivation layer can adopt hydrogenated silicon oxide (SiOx: H) and is prepared by a Plasma Enhanced Chemical Vapor Deposition (PECVD) process, the thickness of the surface passivation layer can be 5-15nm, and the thickness of the surface passivation layer is 10nm.

The photo-thermal collector 5 is mainly used for absorbing far infrared light 11 of more than 1200nm to generate photo-thermal power, and a photo-thermal collector conventional in the art can be adopted.

The coupling modes of the components are as follows:

Firstly, attaching a semitransparent photovoltaic cell 1 on the surface of a photo-thermal reflector 2 by adopting an adhesive method to form a laminated structure 12 of the semitransparent photovoltaic cell 1 and the photo-thermal reflector 2, and then, arranging a spectrum frequency divider 3 at the front end of the laminated structure 12, and arranging an opaque photovoltaic cell 4 and a photo-thermal collector 5 at the focal position of near infrared light 10 reflected by the spectrum frequency divider 3 and the focal position of far infrared light 11 transmitted by the spectrum frequency divider 3 respectively. Further, the laminated structure 12 and the opaque photovoltaic cell 4 are arranged to be angle-adjustable, the laminated structure 12 of the semitransparent photovoltaic cell 1 and the photo-thermal reflecting mirror 2 is angle-adjusted by the bracket 6 arranged at the bottom, the opaque photovoltaic cell 4 is angle-adjusted by the bracket 7 arranged at the bottom,

The working principle of the solar energy comprehensive utilization system of the embodiment is as follows:

Sunlight 8 firstly passes through the semitransparent photovoltaic cell 1, light with the wave band of 200-800nm in the sunlight 8 is absorbed by the semitransparent photovoltaic cell 1 and converted into electric energy, light which is not absorbed (mainly comprises near infrared light 10 with the wave band of 800-1200nm and infrared light with the wave band of >1200 nm) is transmitted to the photo-thermal reflecting mirror 2, the photo-thermal reflecting mirror 2 reflects near infrared light 10 to the opaque photovoltaic cell 4, the opaque photovoltaic cell 4 completes photoelectric conversion of the near infrared light 10, the photo-thermal reflecting mirror 2 simultaneously transmits far infrared light 11 to the downstream photo-thermal collector 5, and heat energy of the far infrared light 11 is used for photo-thermal power generation. The solar comprehensive utilization system utilizes the cooperation of photovoltaic and photo-thermal to generate electricity, the semitransparent photovoltaic cell 1 processes short-wave light, the opaque photovoltaic cell 4 is responsible for medium-wave light, the photo-thermal reflector 2 guides long-wave light to the photo-thermal collector 5 to form an efficient spectrum partition utilization system, so that full-band energy of sunlight 8 can be effectively utilized, the whole energy conversion efficiency is maximized, the system can be applied to tower type, groove type, disc type, fresnel type and other photo-thermal power stations, and customized design solutions are provided for different scenes.

In the solar comprehensive utilization system of the embodiment, the photoelectric conversion efficiency of the semitransparent photovoltaic cell 1 is 20%, the photoelectric conversion efficiency of the opaque photovoltaic cell 4 is 25%, the photo-thermal conversion efficiency of the photo-thermal collector 5 is 80%, and the solar comprehensive utilization efficiency of the whole coupling system is 67%.

Example 2

The translucent photovoltaic cell of example 1 was optimized in this example in the following manner:

In order to enhance the spectrum selectivity, quantum dots or photosensitive materials are introduced into the perovskite layer to realize the selective absorption and transmission of light in a specific wave band, specifically, the ultraviolet light and visible light in the wave band of 200-800nm are optimally absorbed, meanwhile, the transmissivity in the wave band of 800-1200nm is enhanced, and the purpose of improving the photoelectric conversion efficiency of a photovoltaic cell is achieved, and meanwhile, enough infrared light is provided for a photo-thermal component in a photovoltaic photo-thermal integrated system.

The quantum dots or the photosensitive material and the perovskite are introduced to form the composite material, so that the optical characteristics of different materials in different wavebands are fully utilized, the utilization efficiency of the whole spectrum range is improved, the photoelectric conversion efficiency of the photovoltaic cell is improved, the transmittance of the unabsorbed spectrum is maximized, the photo-thermal assembly can receive enough infrared light, and the high-efficiency energy utilization of the photovoltaic photo-thermal integrated system is realized.

Perovskite materials with proper band gap and photoelectric property, such as a band gap range of 1.65-2.30eV, can be selected as perovskite materials with better absorption property in a visible light range, quantum dot materials such as CdSe and PbS can be selected as quantum dots with small size, quantum finite field effect and capability of enhancing light absorption in a specific wave band, and photosensitive materials can be organic photosensitive dyes with higher light absorption coefficient and good stability.

Through the optimization mode, the effective application of the enhanced spectrum selectivity design in the photovoltaic photo-thermal integrated system can be realized, and the comprehensive energy utilization efficiency is improved.

In this example, a precursor solution (concentration of 0.5 mol/L) containing Cd ions and Se ions was placed in a high-pressure reaction vessel and reacted at 150℃under a pressure of 15MPa for 2 hours to obtain CdSe-like quantum dots having a size of about 5 nm.

The prepared CdSe isoquantum dots were dispersed in a solvent, and then uniformly mixed with the perovskite precursor solution of example 1, to prepare a mixed solution. The mixed solution is coated on a hole transport layer by adopting a solution spin coating method, a uniform quantum dot-perovskite film (CdSe-MAPbI ₃) is formed by wet chemical deposition, and then annealing treatment is carried out at 100 ℃ for 30min, so that a 500nm light absorption layer is prepared, wherein the content of CdSe quantum dots in the light absorption layer is 3.5wt%.

Through detection, the semitransparent photovoltaic cell provided with the perovskite layer with the quantum dots introduced by the embodiment has the absorptivity of 93% for ultraviolet light and visible light in the wave band of 200-800nm, the transmissivity for infrared light more than 800nm of 95%, and the photoelectric conversion efficiency of the semitransparent photovoltaic cell of 22%.

Comparative example 1

This comparative example is basically the same as example 1 except that a spectral divider is not provided.

Through detection, the solar comprehensive utilization efficiency of the solar comprehensive utilization system of the comparative example is only 50%.

It should be noted that the above embodiments are merely for illustrating the technical solution of the present utility model and not for limiting the same, and although the present utility model has been described in detail with reference to the above embodiments, it should be understood by those skilled in the art that the technical solution described in the above embodiments may be modified or some or all of the technical features may be equivalently replaced, and these modifications or substitutions do not make the essence of the corresponding technical solution deviate from the scope of the technical solution of the embodiments of the present utility model.

Claims (10)

1. A solar energy integrated utilization system, characterized in that it comprises a semi-transparent photovoltaic cell, a photothermal reflector, a spectral divider, an opaque photovoltaic cell, and a photothermal collector. The semi-transparent photovoltaic cell absorbs ultraviolet and visible light in the 200-800nm range of the solar spectrum. The photothermal reflector is located below the semi-transparent photovoltaic cell and reflects the remaining spectrum that is not absorbed by the semi-transparent photovoltaic cell. The spectral divider directs near-infrared light in the 800-1200nm range and far-infrared light greater than 1200nm in the remaining spectrum to the opaque photovoltaic cell and the photothermal collector, respectively. The opaque photovoltaic cell uses near-infrared light to generate photovoltaic power, and the photothermal collector uses far-infrared light to generate photothermal power. 2. The solar energy comprehensive utilization system according to claim 1, characterized in that the semi-transparent photovoltaic cell is provided with a substrate, a first transparent conductive layer, a first transmission layer, a light absorption layer, a second transmission layer, a second transparent conductive layer and an encapsulation layer in sequence from bottom to top; wherein the first transmission layer and the second transmission layer are hole transmission layers or electron transmission layers. 3. The solar energy comprehensive utilization system according to claim 1, characterized in that the photothermal reflector includes a metal coating and a dielectric stack disposed on the surface of the metal coating, the dielectric stack including multiple alternating layers of silicon dioxide and titanium dioxide. 4. The solar energy comprehensive utilization system according to claim 3, characterized in that the thickness of a single layer of silicon dioxide is 50-200 nm and the number of layers is 3-8; the thickness of a single layer of titanium dioxide is 30-120 nm and the number of layers is 3-8. 5. The solar energy comprehensive utilization system according to claim 1, characterized in that the spectral divider includes a substrate and a dielectric film layer disposed on the surface of the substrate, the dielectric film layer including multiple alternating layers of high refractive index material and low refractive index material. 6. The solar energy comprehensive utilization system according to claim 5, characterized in that the single-layer thickness of the high refractive index material layer is 30-300 nm and the number of layers is 5-25; the single-layer thickness of the low refractive index material layer is 50-500 nm and the number of layers is 5-25. 7. The solar energy integrated utilization system according to claim 1, wherein the opaque photovoltaic cell comprises a substrate and a surface passivation layer disposed on the surface of the substrate. 8. The solar energy integrated utilization system according to claim 1, characterized in that a semi-transparent photovoltaic cell is coupled to the surface of a photothermal reflector to form a stacked structure, a spectral frequency divider is arranged at the front end of the stacked structure, an opaque photovoltaic cell is arranged at the focal point of the near-infrared light reflected by the spectral frequency divider, and a photothermal collector is arranged at the focal point of the far-infrared light transmitted by the spectral frequency divider. 9. The solar energy integrated utilization system according to claim 8, characterized in that an angle adjustment bracket is provided at the bottom of the stacked structure and/or the opaque photovoltaic cell. 10. A solar thermal power plant, characterized in that it is equipped with a solar energy integrated utilization system as described in any one of claims 1-9, wherein the solar thermal power plant is a tower solar thermal power plant, a trough solar thermal power plant, a dish solar thermal power plant, or a Fresnel solar thermal power plant.