CN218812237U - Improve film quality's air inlet structure - Google Patents
Improve film quality's air inlet structure Download PDFInfo
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- CN218812237U CN218812237U CN202223233561.5U CN202223233561U CN218812237U CN 218812237 U CN218812237 U CN 218812237U CN 202223233561 U CN202223233561 U CN 202223233561U CN 218812237 U CN218812237 U CN 218812237U
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- gas inlet
- graphite
- gas
- gas flow
- flow channels
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- 239000007789 gas Substances 0.000 claims abstract description 82
- 239000012495 reaction gas Substances 0.000 claims abstract description 31
- 230000001681 protective effect Effects 0.000 claims abstract description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 58
- 229910002804 graphite Inorganic materials 0.000 claims description 57
- 239000010439 graphite Substances 0.000 claims description 57
- 238000000576 coating method Methods 0.000 claims description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 230000004308 accommodation Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000000376 reactant Substances 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses an air inlet structure for improving the film forming quality, which relates to the technical field of semiconductor production equipment and comprises an air inlet chamber, a reaction chamber and a base; a plurality of protective gas flow channels and a plurality of reaction gas flow channels are arranged in the gas inlet chamber; the gas inlet ends of the plurality of protective gas flow channels and the plurality of reaction gas flow channels are positioned at the outer side of the gas inlet chamber, and the gas outlet ends of the plurality of protective gas flow channels and the plurality of reaction gas flow channels are positioned at the bottom of the gas inlet chamber; and the gas outlet ends of adjacent reactant gas flow channels are completely separated by the gas outlet ends of the protective gas flow channels. The utility model provides an improve inlet structure of film quality adopts a plurality of mutually independent airtight runners to admit air, and the cover gas keeps apart multiple reaction gas to through setting up the adjusting part, change the cross-sectional area of every kind of reaction gas runner, avoid the deposit with the velocity of flow that changes the reaction gas at the end of giving vent to anger.
Description
Technical Field
The utility model relates to a semiconductor production equipment technical field especially relates to an improve film quality's air inlet structure.
Background
The vertical equipment is used for preparing epitaxial films according to the chemical vapor deposition principle, the interior of a reaction chamber of the equipment is in a normal pressure or negative pressure state, and various process gases are introduced into the chamber to be in contact with the substrate wafer in a high-temperature environment for reaction and deposition.
Wafer preparation is usually carried out continuously for a long time, and the reaction chamber gas inlet duct nozzle end part can influence the subsequent gas inlet rate due to the reaction deposition generated at the nozzle caused by the backflow of the reaction gas. Meanwhile, the influence of loss generated in the process, the size of the gas inlet guide pipe, installation error and the like is considered, so that the reaction gas is not uniformly introduced in the process.
Disclosure of Invention
For technical problem more than solving, the utility model provides an improve inlet structure of film quality through the sectional area at adjustment admission pipe both ends for the gas velocity of flow of the end of giving vent to anger reduces size error's influence.
In order to achieve the above object, the utility model provides a following scheme:
the utility model provides an air inlet structure for improving the film forming quality, which comprises an air inlet chamber, a reaction chamber and a base; the reaction chamber is arranged at the bottom of the air inlet chamber, and the air inlet chamber is communicated with the reaction chamber; the base is positioned at the lower part in the reaction chamber and is positioned right below the air inlet chamber; the top of the base is used for supporting a wafer; a pedestal thermal field is arranged in the pedestal and used for heating the wafer; an exhaust port is formed at the bottom of the reaction chamber; a sleeve is arranged in the reaction chamber, and an upper thermal field is arranged between the sleeve and the side wall of the reaction chamber; a plurality of protective gas flow channels and a plurality of reaction gas flow channels are arranged in the gas inlet chamber; the gas inlet ends of the plurality of protective gas flow channels and the plurality of reaction gas flow channels are positioned at the outer side of the gas inlet chamber, and the gas outlet ends of the plurality of protective gas flow channels and the plurality of reaction gas flow channels are positioned at the bottom of the gas inlet chamber; and the gas outlet ends of the adjacent reaction gas flow channels are completely separated by the gas outlet end of the protective gas flow channel.
Optionally, a plurality of graphite plates are arranged in the air inlet chamber, a graphite cover plate is arranged above each graphite plate, and a reaction gas flow channel is arranged between each graphite plate and the corresponding graphite cover plate above the graphite plate; each reaction gas flow channel is communicated to the bottom of the gas inlet chamber through a gas inlet guide pipe; and the protective gas flow channel is respectively arranged between the graphite cover plate positioned on the uppermost layer and the inner top of the air inlet chamber and below the graphite plate on each layer.
Optionally, the top of the air inlet duct is located between the graphite disc and the graphite cover plate, and the other end of the air inlet duct extends to the bottom of the air inlet chamber.
Optionally, the top of air inlet pipe is provided with the horizontal spacing ring that extends to the outside along circumference, the mounting hole that is provided with on the graphite plate, graphite apron on with the corresponding holding tank that is provided with of horizontal spacing ring, the internal dimension of holding tank is greater than the external dimension of horizontal spacing ring.
Optionally, an outer adjusting ring is arranged around the transverse limiting ring, and the outer size of the outer adjusting ring is smaller than the inner size of the accommodating groove.
Optionally, the outer adjustment ring is made of high-purity graphite.
Optionally, the top end of the inner wall of the air inlet guide pipe is provided with a first adjusting groove, an inner adjusting ring is arranged in the first adjusting groove, and the middle part of the inner adjusting ring is provided with an air vent along the axial direction.
Optionally, the inner adjusting ring is made of high-purity graphite.
Optionally, a second adjusting groove is formed in the top end of the inner wall of the air inlet guide pipe, and an adjusting pipe is arranged in the second adjusting groove; the upper portion of the adjusting pipe is provided with a transverse through hole along the radial direction, the middle portion of the adjusting pipe is provided with a vertical through hole along the axial direction, and the top of the vertical through hole is communicated with the transverse through hole.
Optionally, the air inlet duct, the graphite cover plate and the graphite plate are all made of graphite, and a silicon carbide coating is arranged on the outer surface of the graphite cover plate.
The utility model discloses for prior art gain following technological effect:
the utility model provides an improve inlet structure of film quality adopts a plurality of mutually independent airtight runners to admit air, and the cover gas keeps apart multiple reaction gas to through setting up the adjusting part, change the cross-sectional area of every kind of reaction gas runner, avoid the deposit with the velocity of flow that changes the reaction gas at the end of giving vent to anger.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic cross-sectional view of a film forming apparatus employing a side-view air intake structure;
FIG. 2 is an enlarged schematic cross-sectional view of an inlet chamber of a film forming apparatus;
FIG. 3 is a schematic view of an inlet duct peripheral adjustment ring configuration and mounting location;
FIG. 4 is a schematic view of an internal tuning ring structure and mounting location of the intake air conduit;
fig. 5 is a schematic view of an intake duct end trim tube structure and mounting location.
Description of reference numerals: 1. an air intake chamber; 2. a reaction chamber; 3. a thermal field; 4. a sleeve; 5. a wafer; 6. a substrate; 7. a base; 8. a rotation mechanism; 9. a graphite cover plate; 10. a graphite plate; 11. an air intake duct; 12. an outer adjustment ring; 13. an inner adjusting ring; 14. and (4) a regulating pipe.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
The first embodiment is as follows:
as shown in fig. 1 to 3, the present embodiment provides a gas inlet structure for improving film forming quality, comprising a gas inlet chamber 1, a reaction chamber 2 and a susceptor 7; the bottom of the air inlet chamber 1 is provided with a reaction chamber 2, and the air inlet chamber 1 is communicated with the reaction chamber 2; the base 7 is positioned at the lower part in the reaction chamber 2, and the base 7 is positioned right below the air inlet chamber 1; the top of the base 7 is used for supporting the wafer 5; a susceptor thermal field is arranged in the susceptor 7 and used for heating the wafer 5; the bottom of the reaction chamber 2 is provided with an exhaust port; a sleeve 4 is arranged in the reaction chamber 2, and an upper thermal field is arranged between the sleeve 4 and the side wall of the reaction chamber 2; three protective gas flow channels and two reaction gas flow channels are arranged in the gas inlet chamber 1, and silicon source reaction gas and carbon source reaction gas are respectively introduced into the two reaction gas flow channels; the gas inlet ends of the three protective gas flow channels and the two reaction gas flow channels are positioned at the outer side of the gas inlet chamber 1, and the gas outlet ends of the three protective gas flow channels and the two reaction gas flow channels are positioned at the bottom of the gas inlet chamber 1; and the gas outlet ends of adjacent reactant gas flow channels are completely separated by the gas outlet ends of the protective gas flow channels.
In this embodiment, a sleeve 4 is disposed at the middle upper portion of the reaction chamber 2, a thermal field 3 is disposed between the sleeve 4 and the inner wall of the reaction chamber 2, and the inlet air can be uniformly preheated by the thermal field 3 and the sleeve 4. The base 7 is provided with a substrate 6 on top, and the substrate 6 is used for supporting the wafer 5 on top. The base 7 is connected to a rotating mechanism 8 at the bottom thereof, and the rotating mechanism 8 rotates the base 7.
Two layers of graphite plates 10 are arranged in the air inlet chamber 1, a graphite cover plate 9 is arranged above each layer of graphite plate 10, and a reaction gas flow channel is arranged between each graphite plate 10 and the corresponding graphite cover plate 9 above the graphite plate; each reaction gas flow passage is communicated to the bottom of the gas inlet chamber 1 through a gas inlet guide pipe 11; a protective gas flow passage is respectively arranged between the uppermost graphite cover plate 9 and the inner top of the air inlet chamber 1 and below each layer of graphite plate 10.
The top of the air inlet duct 11 is located between the graphite disc 10 and the graphite cover plate 9, and the other end of the air inlet duct 11 extends to the bottom of the air inlet chamber 1. Specifically, the top of air inlet guide pipe 11 is provided with the horizontal spacing ring that extends outward along circumference, and the mounting hole that is provided with on the graphite dish 10, and graphite apron 9 is last to be provided with the holding tank with horizontal spacing ring is corresponding, and the internal dimension of holding tank is greater than the external dimension of horizontal spacing ring. In this embodiment, the accommodating groove is a cylindrical groove, the horizontal limiting ring is a circular ring structure, and the thickness of the horizontal limiting ring is smaller than the depth of the accommodating groove.
The top end of the air inlet guide pipe 11 is provided with an adjusting piece, and the sectional area of the adjusting piece before and after installation is changed to 40-90% of the drift diameter of the original flow passage. When the adjusting piece is installed, only a gap necessary for installation needs to be reserved on the size, and the phenomenon that the adjusting piece is obviously deviated in the air inlet process to influence the air inlet uniformity is avoided.
In this embodiment, the adjusting member is an outer adjusting ring 12, the outer adjusting ring 12 is disposed around the lateral limiting ring, and the outer dimension of the outer adjusting ring 12 is smaller than the inner dimension of the receiving groove. The outer adjusting ring 12 is made of high-purity graphite. The high-purity graphite has better processability and meets the processing size required by adjustment.
The air inlet guide pipe 11, the graphite cover plate 9 and the graphite disc 10 are all made of graphite, and the outer surfaces of the air inlet guide pipe, the graphite cover plate and the graphite disc are provided with silicon carbide coatings, so that the high heat-resistant surface coatings can increase the reflectivity, reduce the heat conduction of the thermal field 3 to the air inlet chamber 1 and inhibit deposition.
Example two:
as shown in fig. 4, this embodiment is a modified embodiment based on the first embodiment, in this embodiment, the adjusting member is an inner adjusting ring 13, a first adjusting groove is provided at the top end of the inner wall of the air intake duct 11, the inner adjusting ring 13 is provided in the first adjusting groove, and a vent hole is provided in the middle of the inner adjusting ring 13 along the axial direction. The inner adjusting ring 13 is made of high-purity graphite.
Example three:
as shown in fig. 5, this embodiment is a modified embodiment based on the first embodiment, in this embodiment, a second adjusting groove is arranged at the top end of the inner wall of the air intake conduit 11, and an adjusting pipe 14 is arranged in the second adjusting groove; the upper part of the adjusting pipe 14 is provided with a transverse through hole along the radial direction, the middle part of the adjusting pipe 14 is provided with a vertical through hole along the axial direction, and the top of the vertical through hole is communicated with the transverse through hole. The adjusting pipe 14 is installed in the second adjusting groove and is provided with a plurality of transverse through holes uniformly distributed in the circumferential direction, and chamfering processing is carried out on the second adjusting groove for ensuring smooth air inlet.
It should be noted that, as is obvious to a person skilled in the art, the invention is not limited to details of the above-described exemplary embodiments, but can be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein, and any reference signs in the claims are not intended to be construed as limiting the claim concerned.
The principle and the implementation mode of the present invention are explained by applying specific examples in the present specification, and the above descriptions of the examples are only used to help understanding the method and the core idea of the present invention; meanwhile, for the general technical personnel in the field, according to the idea of the present invention, there are changes in the concrete implementation and the application scope. In summary, the content of the present specification should not be construed as a limitation of the present invention.
Claims (10)
1. An air inlet structure for improving the film forming quality is characterized by comprising an air inlet chamber, a reaction chamber and a base; the reaction chamber is arranged at the bottom of the air inlet chamber, and the air inlet chamber is communicated with the reaction chamber; the base is positioned at the lower part in the reaction chamber and is positioned right below the air inlet chamber; the top of the base is used for supporting a wafer; a pedestal thermal field is arranged in the pedestal and used for heating the wafer; an exhaust port is formed at the bottom of the reaction chamber; a sleeve is arranged in the reaction chamber, and an upper thermal field is arranged between the sleeve and the side wall of the reaction chamber;
a plurality of protective gas flow channels and a plurality of reaction gas flow channels are arranged in the gas inlet chamber; the gas inlet ends of the plurality of protective gas flow channels and the plurality of reaction gas flow channels are positioned at the outer side of the gas inlet chamber, and the gas outlet ends of the plurality of protective gas flow channels and the plurality of reaction gas flow channels are positioned at the bottom of the gas inlet chamber; and the gas outlet ends of the adjacent reaction gas flow channels are completely separated by the gas outlet end of the protective gas flow channel.
2. The gas inlet structure for improving film forming quality according to claim 1, wherein a plurality of graphite discs are arranged in the gas inlet chamber, a graphite cover plate is arranged above each graphite disc, and a reaction gas flow channel is arranged between each graphite disc and the corresponding graphite cover plate above the graphite disc; each reaction gas flow channel is communicated to the bottom of the gas inlet chamber through a gas inlet guide pipe;
and the protective gas flow channel is respectively arranged between the graphite cover plate positioned on the uppermost layer and the inner top of the air inlet chamber and below the graphite plate on each layer.
3. The gas inlet structure for improving the film forming quality as claimed in claim 2, wherein the top of the gas inlet duct is located between the graphite disc and the graphite cover plate, and the other end of the gas inlet duct extends to the bottom of the gas inlet chamber.
4. A gas inlet structure for improving film formation quality according to claim 3, wherein a lateral stopper ring extending outward is provided at the top of the gas inlet duct in the circumferential direction, a mounting hole is provided in the graphite plate, and a receiving groove having an inner dimension larger than an outer dimension of the lateral stopper ring is provided in the graphite cover plate in correspondence with the lateral stopper ring.
5. A gas inlet structure for improving film forming quality as claimed in claim 4, wherein an outer adjustment ring is disposed around the lateral limiting ring, and the outer dimension of the outer adjustment ring is smaller than the inner dimension of the accommodation groove.
6. The gas inlet structure for improving the film forming quality as claimed in claim 5, wherein the outer adjusting ring is made of high-purity graphite.
7. A gas inlet structure according to claim 4, wherein a first adjustment groove is provided in a top end of an inner wall of the gas inlet duct, an inner adjustment ring is provided in the first adjustment groove, and a vent hole is provided in a middle portion of the inner adjustment ring in an axial direction.
8. The gas inlet structure for improving film formation quality according to claim 7, wherein the inner adjusting ring is made of high purity graphite.
9. The gas inlet structure for improving the film forming quality as claimed in claim 4, wherein a second adjusting groove is formed at the top end of the inner wall of the gas inlet duct, and an adjusting pipe is arranged in the second adjusting groove; the upper portion of the adjusting pipe is provided with a transverse through hole along the radial direction, the middle portion of the adjusting pipe is provided with a vertical through hole along the axial direction, and the top of the vertical through hole is communicated with the transverse through hole.
10. A gas inlet structure for improving film forming quality according to claim 2, wherein the gas inlet duct, the graphite cover plate and the graphite plate are made of graphite, and the outer surface of the gas inlet structure is provided with a silicon carbide coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223233561.5U CN218812237U (en) | 2022-12-05 | 2022-12-05 | Improve film quality's air inlet structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223233561.5U CN218812237U (en) | 2022-12-05 | 2022-12-05 | Improve film quality's air inlet structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218812237U true CN218812237U (en) | 2023-04-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202223233561.5U Active CN218812237U (en) | 2022-12-05 | 2022-12-05 | Improve film quality's air inlet structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218812237U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115821376A (en) * | 2022-12-05 | 2023-03-21 | 宁波恒普真空科技股份有限公司 | A kind of intake structure to improve the quality of film formation |
-
2022
- 2022-12-05 CN CN202223233561.5U patent/CN218812237U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115821376A (en) * | 2022-12-05 | 2023-03-21 | 宁波恒普真空科技股份有限公司 | A kind of intake structure to improve the quality of film formation |
| CN115821376B (en) * | 2022-12-05 | 2025-07-01 | 宁波恒普技术股份有限公司 | An air intake structure for improving film forming quality |
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Address after: No. 365, Xinxing 1st Road, Cixi hi tech Industrial Development Zone, Ningbo City, Zhejiang Province, 315300 Patentee after: Ningbo Hengpu Technology Co.,Ltd. Address before: No. 365, Xinxing 1st Road, Cixi hi tech Industrial Development Zone, Ningbo City, Zhejiang Province, 315300 Patentee before: Ningbo Hengpu Vacuum Technology Co.,Ltd. |