TWI901368B - Gas shower head, vapor deposition equipment and method of use thereof - Google Patents

Abstract

The present invention discloses a gas shower head, a vapor deposition device, and a method for using the same. The gas shower head includes a gas distribution plate, a plurality of first gas holes, and a plurality of second gas holes. The first/second gas holes are used to supply the first and second gases to the surface of the substrate to be processed. The first gas delivery channel located at the center of the gas distribution plate is referred to as the central first gas delivery channel, and the second gas delivery channel adjacent to the central first gas delivery channel is referred to as the central second gas delivery channel. A plurality of second gas central replenishing holes are provided, and the outlets of the plurality of second gas central replenishing holes are spaced apart and distributed on the area where the central first gas delivery channel is located, so as to replenish the second gas to the central area below the gas distribution plate. The present invention improves the uniformity of the distribution of the gaseous precursor in the central area of the reaction chamber.

Description

Gas shower head, vapor deposition equipment and method of use thereof

The present invention relates to the field of semiconductor equipment technology, and in particular to a gas shower head, a vapor deposition device, and a method of using the same.

Growing thin films on substrate surfaces using vapor deposition technology under vacuum conditions is an important approach to obtaining thin film materials with excellent mechanical properties and special physical/chemical properties, and is a current research hotspot in fields such as materials science and physics.

ALD (Atomic Layer Deposition) is one of the most widely used thin film growth techniques. Essentially a type of chemical vapor deposition (CVD), it involves alternately pulsed vapor precursors into a reactor, where they adsorb onto a substrate and react chemically between atoms to form a deposited film. Compared to other thin film deposition methods such as CVD and physical vapor deposition (PVD), ALD offers significant advantages in terms of conformality and uniformity of grown films due to its unique reaction mechanism.

During atomic layer deposition (ALD) processing, different types of gaseous precursors (referred to as the first gas and the second gas) are required to be alternately introduced into the processing chamber containing the substrate via a gas showerhead within the VLD equipment. Furthermore, a uniform amount of reactive gas must be provided to the substrate. This requires that the different types of gaseous precursors not only be prevented from mixing within the gas showerhead but also be isolated from each other to prevent crosstalk. Therefore, the structure of existing gas showerheads includes multiple concentric circular gas channels, each of which includes multiple first gas delivery channels and multiple second gas delivery channels. The multiple first gas delivery channels and the multiple second gas delivery channels are arranged alternately with each other, and the delivery channels for the same type of gas are connected between the concentric circles via a third gas channel located on the cover plate. In this type of gas showerhead structure, the gas delivery channels located in the center ring can only be used to transport the first gas. Assuming that the gas delivery channels in the center ring are the first gas delivery channels and the channels outside them are the second gas delivery channels, this will result in a significantly reduced concentration of the second gas in the center area of the reaction chamber, that is, the first gas and the second gas are unevenly distributed in the center area of the reaction chamber.

The present invention aims to provide a gas shower head, vapor deposition equipment, and methods for using the same, which enable uniformly distributed delivery of different types of vapor precursors to a reaction chamber while isolating the different types of vapor precursors within the gas shower head.

In order to achieve the above objectives, the present invention is implemented through the following technical solutions:

A gas showerhead includes a gas distribution plate having gas delivery channels, the gas delivery channels comprising a plurality of first gas delivery channels for delivering a first gas and a plurality of second gas delivery channels for delivering a second gas, the plurality of first gas delivery channels and the plurality of second gas delivery channels being arranged alternately and concentrically with each other; a plurality of first gas holes spaced apart on the first gas delivery channels; and a plurality of second gas holes spaced apart on the second gas delivery channels, the first gas holes and the second gas holes being used to supply the first gas and the second gas to the surface of a substrate to be processed.

The first gas delivery channel located at the center of the gas distribution plate is a central first gas delivery channel, and the second gas delivery channel adjacent to the central first gas delivery channel is a central second gas delivery channel.

There are multiple central air supply holes for the second gas, and the inlets of the multiple central air supply holes for the second gas are arranged on the central second gas delivery channel. The outlets of the multiple central air supply holes for the second gas are spaced and distributed between the two first gas holes of the central first gas delivery channel, so as to supply the second gas to the central area below the gas distribution plate.

Optionally, there is a partition between the first gas delivery channel and the second gas delivery channel, and the outlets of multiple second gas central air supply holes are spaced and distributed on the partition between the central first gas delivery channel and the central second gas delivery channel, for supplying the second gas to the central area below the gas distribution plate.

Optionally, the gas outlet direction of each of the second gas center air supply holes is toward the central axis of the gas distribution plate.

Optionally, the distance between the outlet of each of the second gas center air-filling holes and the outlets of two adjacent first gas holes is equal.

Optionally, the angle between the inclined direction and the vertical direction of each of the second gas center air filling holes is in the range of 30° to 60°.

Optionally, the gas shower head further includes a cover plate that covers the gas distribution plate, the cover plate being provided with gas communication channels, the gas communication channels including a plurality of first gas communication channels and a plurality of second gas communication channels. The first gas communication channels span the second gas communication channels to connect to two adjacent first gas delivery channels. The second gas communication channels span the first gas delivery channels to connect to two adjacent second gas delivery channels.

Optionally, each of the first gas delivery channels and each of the second gas delivery channels are disconnected C-shaped grooves. A plurality of first partition plates are provided, each of the first partition plates is disposed within a corresponding first gas delivery channel. A plurality of second partition plates are provided, each of the second partition plates is disposed within a corresponding second gas delivery channel.

Multiple first gas replenishing holes, the inlet of each first gas replenishing hole is located on the first gas delivery channel and is arranged close to the first partition plate; the outlet of each first gas replenishing hole is located on the partition area and is arranged close to the intersection between the first partition plate and the partition area to replenish the first gas to the area where the corresponding second gas delivery channel is located.

Multiple second gas replenishing holes, the inlet of each second gas replenishing hole is located on the second gas delivery channel and is arranged close to the second partition plate; the outlet of each second gas replenishing hole is located on the partition area and is arranged close to the intersection between the second partition plate and the partition area to replenish the second gas to the area where the corresponding first gas delivery channel is located.

Optionally, the outlet of each first gas replenishing hole is located between the outlets of two second gas holes on the corresponding second gas delivery channel. The outlet of each second gas replenishing hole is located between the outlets of two first gas holes on the corresponding first gas delivery channel.

Optionally, the outlet of each first gas replenishing hole is equal to the outlets of two adjacent second gas holes. The outlet of each second gas replenishing hole is equal to the outlet of two adjacent first gas holes.

Optionally, the gas outlet direction of each of the first gas replenishing holes and the second gas replenishing holes is not toward the central axis of the gas distribution plate.

Optionally, an angle between an inclined direction of the first gas filling hole or the second gas filling hole and a vertical direction is less than 45°.

Optionally, an angle between an inclined direction of the first gas pore or the second gas pore and a vertical direction is 10° to 30°.

Optionally, the central first gas delivery channel is provided with two circles of first gas holes, wherein the inlet of one circle of first gas holes is located near the inner annular sidewall of the first gas delivery channel, and the inlet of the other circle of first gas holes is located near the outer annular sidewall of the first gas delivery channel. The central second gas delivery channel is further provided with a circle of second gas holes, wherein the inlet of the second gas holes is located near the outer annular sidewall of the second gas delivery channel.

Optionally, a first inlet port connected to the first gas delivery channel is used to deliver a first gas into the first gas delivery channel. A first low-pressure source is connected to a first outlet port of the first gas delivery channel and is used to provide a low pressure at the first outlet port. A second inlet port connected to the second gas delivery channel is used to deliver a second gas into the second gas delivery channel. A second low-pressure source is connected to a second outlet port of the second gas delivery channel and is used to provide a low pressure at the second outlet port.

On the other hand, the present invention also provides a vapor deposition apparatus comprising: a reaction chamber; a susceptor disposed at the bottom of the reaction chamber and configured to support a substrate; and a gas shower head as described above, disposed at the top of the reaction chamber, opposite the susceptor, and configured to provide a reaction gas to the surface of the substrate.

On the other hand, the present invention also provides a method of using the vapor deposition apparatus as described above, comprising: step a, introducing the first gas into the first gas delivery channel, and the second low-pressure source is in a closed state.

Step b: Stop introducing the first gas, introduce purge gas into the first gas delivery channel, and keep the first low-pressure source on.

Step c: Turn off the first low-pressure source and introduce the second gas into the second gas delivery channel. The second gas is replenished into the central area below the first gas delivery channel located at the center of the gas distribution plate through multiple second gas center supply holes spaced apart in the second gas delivery channel adjacent to the first gas delivery channel located at the center of the gas distribution plate. Step d: Stop introducing the second gas and introduce purge gas into the second gas delivery channel, leaving the second low-pressure source on. Repeat steps a-d.

The present invention has at least one of the following technical effects:

The present invention provides a gas shower head that, through first and second gas delivery channels, enables different types of gaseous precursors (a first gas and a second gas) to be supplied to a reaction chamber while being isolated from each other within the gas shower head.

By providing a plurality of second gas central gas supply holes, the second gas is supplied to the lower central area of the gas distribution plate, thereby solving the problem that, due to the presence of only one type of gas delivery channel (for example, the first gas delivery channel) in the central area of the gas distribution plate, the concentration of this type of gas (for example, the first gas) in the central area of the gas distribution plate is too high, while the concentration of other types of gas (for example, the second gas) is relatively low, which in turn leads to uneven distribution of the gaseous precursor in the central area of the reaction chamber.

The gas outlet direction of the second gas center gas supply hole of the present invention is toward the central axis of the gas distribution plate, thereby better supplying gas to the central area of the reaction chamber and promoting a more uniform distribution of the gas-phase precursor in the central area of the reaction chamber.

The first gas supply hole and the second gas supply hole of the present invention can supply gas to the interval area where the first gas hole and the second gas hole cannot be opened, and can supply gas to the area where the corresponding first gas delivery channel and the second gas delivery channel are located, thereby improving the uniformity of the gas phase precursor distribution in the area.

The following, combined with diagrams and specific embodiments, further details the gas shower head, vapor deposition equipment, and methods of use proposed by the present invention. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the diagrams are highly simplified and not to exact scale, and are intended solely to facilitate and clearly illustrate the embodiments of the present invention. Please refer to the diagrams to make the objects, features, and advantages of the present invention more clearly understood. It should be noted that the structures, proportions, sizes, etc. illustrated in the figures of this specification are intended solely to facilitate understanding and reading by those skilled in the art in conjunction with the contents disclosed herein. They are not intended to limit the implementation of the present invention and therefore have no substantive technical significance. Any structural modifications, changes in proportions, or adjustments in size, provided they do not affect the efficacy and objectives of the present invention, shall remain within the scope of the technical content disclosed herein.

As shown in FIG1 , this embodiment provides a gas shower head, comprising a gas distribution plate 10 having gas delivery channels. The gas delivery channels include a plurality of first gas delivery channels 100 for delivering a first gas and a plurality of second gas delivery channels 200 for delivering a second gas. The plurality of first gas delivery channels 100 and the plurality of second gas delivery channels 200 are alternately arranged and concentrically disposed.

As shown in Figure 2, the cover plate 11 is covered on the gas distribution plate 10, and the cover plate 11 is provided with a gas communication channel, which includes a plurality of first gas communication channels 120 and a plurality of second gas communication channels 220; the first gas communication channel 120 crosses the second gas delivery channel 200 to connect with two adjacent first gas delivery channels 100; the second gas communication channel 220 crosses the first gas delivery channel 100 to connect with two adjacent second gas delivery channels 200.

A plurality of first gas holes (as shown by reference numerals 101 and 102 in FIG. 1 ) are spaced apart on the first gas delivery channel 100 . The inlet of the first gas hole is disposed on the first gas delivery channel 100 , and the outlet of the first gas hole is disposed on the spacer 103 between the first gas delivery channel 100 and the second gas delivery channel 200 .

A plurality of second gas holes (as indicated by reference numeral 203 in FIG. 1 , and reference numerals 204 and 205 in FIG. 2 ) are spaced apart on the second gas delivery channel 200. The inlets of the second gas holes are disposed on the second gas delivery channel 200, and the outlets of the second gas holes are disposed on the spacer 103 between the first gas delivery channel 100 and the second gas delivery channel 200. The first gas holes and the second gas holes are used to supply the first gas A and the second gas B to the surface of a substrate to be processed (not shown in FIG. 1 ).

It is understandable that, for the sake of convenience, the first gas delivery channel 100 located at the center of the gas distribution plate 10 is referred to as the central first gas delivery channel, and the second gas delivery channel 200 adjacent to the central first gas delivery channel is referred to as the central second gas delivery channel.

Multiple second gas central air supply holes 201, the outlets of the multiple second gas central air supply holes 201 are spaced apart and distributed in the gap between the central first gas delivery channel and the central second gas delivery channel, and are used to supply the second gas to the lower central area of the gas distribution plate 10.

Continuing with FIG. 2 , in this embodiment, the gas distribution plate 10 has a front face 12 and a back face 13, which are positioned opposite each other. The back face 13 is positioned within the reaction chamber, while the front face 12 is positioned away from the interior of the reaction chamber. The front face 12 of the gas distribution plate 10 is provided with the gas delivery channel, which is recessed toward the back face 13. The cover plate 11 covers the front face 12 of the gas distribution plate 10 and is sealed to the gas distribution plate 10 to prevent the first gas and the second gas from mixing within the gas distribution plate and from diffusing into the external atmosphere through the gap between the two gas distribution plates, thereby contaminating the environment.

Each of the first gas delivery channels 100 is provided with two circles of first gas holes. The inlet of each of the first gas holes (as shown by the number 101 in FIG. 2 ) in one circle is located near the inner sidewall of the first gas delivery channel 100, and the outlet of the first gas holes (as shown by the number 101 in FIG. 2 ) is located on the back surface 13 of the gas distribution plate 10 and faces the central axis of the gas distribution plate 10. The inlet of each of the first gas holes (as shown by the number 102 in FIG. 2 ) in the other circle is located near the outer sidewall of the first gas delivery channel 100, and the outlet of the first gas holes (as shown by the number 102 in FIG. 2 ) is located on the back surface 13 of the gas distribution plate 10 and faces away from the central axis of the gas distribution plate 10.

Please continue to refer to Figure 2. In this embodiment, in addition to the central second gas delivery channel, each of the second gas delivery channels 200 is provided with two circles of second gas holes (as shown by the numbers 204 and 205 in Figure 2), wherein the inlet of each of the second gas holes in one circle (as shown by the number 204 in Figure 2) is arranged close to the inner circle side wall of the second gas delivery channel 200, and the outlet of the second gas hole (as shown by the number 204 in Figure 2) is opened on the back side 13 of the gas distribution plate 10 and faces the center axis of the gas distribution plate 10. The inlet of each second gas hole (as shown by label 205 in Figure 2) in another circle is arranged close to the outer circle side wall of the second gas delivery channel 200, and the outlet of the second gas hole (as shown by label 205 in Figure 2) is opened on the back side 13 of the gas distribution plate 10 and is arranged away from the central axis of the gas distribution plate 10.

As shown in Figures 1 and 2 , the central second gas delivery channel is provided with a circle of second gas holes (as indicated by reference numeral 203 in Figures 1 or 2 ) and a circle of second gas central replenishment holes 201. The inlets of the second gas holes (as indicated by reference numeral 203 in Figure 2 ) in the central second gas delivery channel are located near the outer sidewall of the central second gas delivery channel, while the outlets of the second gas holes (as indicated by reference numeral 203 in Figure 2 ) are located on the back surface 13 of the gas distribution plate 10 and away from the central axis of the gas distribution plate 10.

The inlet of each of the second gas center air supply holes 201 is arranged near the center line of the central second gas delivery channel, and the outlet of the second gas center air supply hole 201 is opened on the back side 13 of the gas distribution plate 10 and is arranged near the center axis of the gas distribution plate 10.

As shown in Figures 1 and 2 , a partition 103 exists between the two first gas supply channels 100 and the second gas supply channel 200. The outlets of multiple central second gas supply holes 201 are spaced and distributed in this partition 103 between the central first gas supply channel and the central second gas supply channel to supply the second gas to the lower central area of the gas distribution plate 10. The partition 103 should be as small as possible to accommodate more first gas supply channels 100 and second gas supply channels 200.

Continuing with Figure 1 , each of the second gas central supply holes 201 directs gas outflow toward the central axis of the gas distribution plate 10. This facilitates the replenishment of the second gas to the lower central region of the gas distribution plate 10, improving the supply efficiency and the uniformity of the distribution of various gaseous precursors in the lower central region of the gas distribution plate 10.

Continuing with Figure 1, in this embodiment, the outlet of each central second gas replenishment hole 201 is located between the outlets of two first gas holes (see reference numeral 102 in Figure 1) in the central first gas delivery channel. This arrangement ensures that the first and second gas outlets within the same partition 103 are arranged alternately, ensuring that the gas outlets within the same radius on the gas distribution plate 10 are evenly arranged, thereby ensuring uniform distribution of the first and second gases. The second gas center air supply hole 201 can also supply air to the area between the outlets of the two first gas holes (refer to the label 102 in Figure 1), thereby supplying air to the lower central area of the gas distribution plate 10, thereby improving the distribution uniformity of various gas-phase precursors in this area.

In this embodiment or some other embodiments, the outlet of each second central gas supply hole 201 is equidistant from the outlets of two adjacent first gas holes (see reference numeral 102 in FIG. 1 ). This allows for more uniform gas supply to the area between the outlets of the two first gas holes (see reference numeral 102 in FIG. 1 ).

In this embodiment or some other embodiments, the angle β1 between the tilt direction and the vertical direction of each second gas central supply hole 201 ranges from 30° to 60°. The outlet of each second gas central supply hole 201 is oriented toward the central axis of the gas distribution plate 10, thereby better supplying the second gas to the central area. Optionally, the tilt angle of each of the second gas central supply holes 201 is such that the intersection of the centerline of the tilted hole and the bottom surface exactly coincides with the centerline of the partition 103.

As shown in Figure 3, each first gas delivery channel 100 and each second gas delivery channel 200 is a non-connected C-shaped groove. Due to the need for rapid exhaust, the first gas delivery channel 100 and the second gas delivery channel 200 are each connected to an external low-pressure source (not shown). To further increase the exhaust speed and ensure a continuous flow of each transported gas from intake to exhaust, thereby achieving faster exhaust, each first gas delivery channel 100 and each second gas delivery channel 200 is a non-connected C-shaped groove. Two adjacent first gas delivery channels 100 are connected by a first gas connecting channel 120, and two adjacent second gas delivery channels 200 are connected by a second gas connecting channel 220.

A plurality of first partition plates 110 are provided, each of which is disposed in a corresponding first gas transport channel 100. In this embodiment or some other embodiments, the first partition plates 110 may be provided integrally with the first gas transport channel 100. A plurality of second partition plates 210 are provided, each of which is disposed in a corresponding second gas transport channel 200. In this embodiment or some other embodiments, the second partition plates 210 may be provided integrally with the second gas transport channel 200. In some embodiments, the first gas communication channel 120 may be provided in the vertical direction of the first partition plate, and the second gas communication channel 220 may be provided in the vertical direction of the second partition plate 210.

Please continue to refer to Figure 3, which shows multiple first gas replenishment holes 104. The inlet of each first gas replenishment hole 104 is located in the first gas delivery channel 100 and is arranged near the first partition plate 110; the outlet of each first gas replenishment hole 104 is located on the partition area 103 and is arranged near the intersection between the first partition plate 110 and the partition area 103 to replenish the first gas in the area where the corresponding second gas delivery channel 200 is located.

Multiple second gas supply holes 202 are provided. The inlet of each second gas supply hole 202 is located within the second gas delivery channel 200 and is disposed near the second partition plate 210. The outlet of each second gas supply hole 202 is located on the partition area 103 and is disposed near the intersection between the second partition plate 210 and the partition area 103, so as to supply the second gas to the corresponding area of the first gas delivery channel 100. The provision of the first gas supply holes 104 and/or the second gas supply holes 202 can solve the problem in the prior art where the presence of the first partition plate 110 and/or the second partition plate 210 prevents the provision of first gas holes or second gas holes in the area where the partition plate is located, i.e., the presence of a jump hole defect, which in turn causes uneven distribution of the gaseous precursor in this area.

3 , the outlet of each first gas replenishing hole 104 is located between the outlets of two second gas holes (as shown by reference numeral 205 in FIG. 3 ) on the corresponding second gas delivery channel 200 .

The outlet of each second gas replenishing hole 202 is located between the outlets of two first gas holes (refer to the reference numeral 102 in FIG. 3 ) on the corresponding first gas delivery channel 100 .

It is understood that the outlets of all types of gas holes involved in this embodiment are opened on the corresponding partition 103. Therefore, it can be considered that the outlet of each first gas replenishing hole 104 is located between the outlets of two second gas holes (refer to the number 205 in Figure 3) on the partition 103. It can also be considered that the outlet of each second gas replenishing hole 202 is located between the outlets of two first gas holes (refer to the number 102 in Figure 3) on the partition 103.

In some embodiments, the distances between the outlet of each first gas replenishing hole 104 and the outlets of two adjacent second gas holes (refer to the reference numeral 205 in FIG. 3 ) are equal.

The outlet of each second gas replenishing hole 202 is equidistant from the outlets of the two adjacent first gas holes (as shown by reference numeral 102 in FIG3 ). This arrangement allows the gaseous precursor to be more evenly distributed in this area.

Continuing with FIG. 3 , in this embodiment or some other embodiments, the gas outlet direction of each of the first gas supply holes 104 and the second gas supply holes 202 is not toward the central axis of the gas distribution plate 10. Optionally, the angle between the inclined direction of the first gas supply hole 104 or the second gas supply hole 202 and the vertical direction is less than 45°.

Continuing to refer to FIG. 4 , the angle β1 between the tilt direction of the second gas center air supply hole 201 and the vertical direction is 30° to 60°.

Continuing with FIG. 4 , the angle β between the tilt direction of the first gas holes (indicated by 101 or 102 in FIG. 4 ) or the second gas holes (indicated by 203 in FIG. 2 ) and the vertical direction is 10° to 30°. The tilted and staggered arrangement of all types of gas holes avoids the formation of a gas curtain caused by vertically oriented holes, which can hinder the uniform distribution of different gases within the reaction chamber or on the substrate surface.

In this embodiment or some other embodiments, please continue to refer to FIG. 3 . The first inlet end of the first gas delivery channel 100 is connected to the first outlet end of the first gas delivery channel 100 and is used to deliver a first gas to the first outlet end. A first low-pressure source (not shown in FIG. 3 ) is connected to the first outlet end of the first gas delivery channel 100 and is used to provide a low pressure to the first outlet end. A second inlet end of the second gas delivery channel 200 is connected to the second outlet end of the second gas delivery channel 200 and is used to deliver a second gas to the second outlet end. It will be understood that in some embodiments, the first low-pressure source and the second low-pressure source may be vacuum pumps.

As shown in FIG5 , this embodiment further provides a vapor deposition apparatus, comprising: a reaction chamber 50; a susceptor 51 disposed at the bottom of the reaction chamber 50 and configured to support a substrate 53; and a gas showerhead 52 having a gas distribution plate 10 as described in the above embodiment. The gas showerhead 52 is disposed at the top of the reaction chamber 50, opposite the susceptor 51, and configured to supply reactive gases to the surface of the substrate 53. This allows for uniform supply of multiple reactive gases to the surface of the substrate 53.

In another aspect, this embodiment further provides a method for using the vapor deposition apparatus, comprising:

Step a: introducing the first gas into the first gas delivery channel, and the second low-pressure source is in a closed state.

Step b: Stop introducing the first gas, introduce purge gas into the first gas delivery channel, and keep the first low-pressure source on.

Step c: Turn off the first low-pressure source and introduce the second gas into the second gas delivery channel.

The second gas is replenished to the central area below the first gas delivery channel located at the center of the gas distribution plate through a plurality of second gas central gas replenishing holes spaced apart on the second gas delivery channel adjacent to the first gas delivery channel located at the center of the gas distribution plate.

Step d: Stop the second gas flow and introduce purge gas into the second gas delivery channel, with the second low-pressure source turned on. Repeat steps a-d.

As can be seen, by simultaneously introducing a purge gas into the first or second gas delivery channel and simultaneously performing a vacuum, residual reactive gas in the first/second gas delivery channel can be quickly removed, preventing the two reactive gases from reacting and forming deposits within the gas showerhead. Furthermore, while the corresponding reactive gas is introduced into the first/second gas delivery channel, the second gas can be replenished through the plurality of central second gas replenishment holes to the central area below the first gas delivery channel located at the center of the gas distribution plate. Furthermore, the plurality of first and second gas replenishment holes can be used to replenish gas to the area where the first or second partition plate is located (or where the jump hole exists), thereby further improving the uniformity of the distribution of the multiple reactive gases on the substrate surface.

It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements includes not only those elements, but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a..." does not preclude the presence of additional identical elements in the process, method, article, or apparatus that includes the element.

In the description of the present invention, it should be understood that terms such as "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," and "circumferential" indicate positions or locations based on those shown in the drawings. These terms are used solely to facilitate and simplify the description of the present invention and do not indicate or imply that the devices or components referred to must have, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations of the present invention. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

In the description of this invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "connected," and "fixed" should be interpreted broadly. For example, they may refer to fixed or removable connections, or integration; mechanical or electrical connections; direct connections or indirect connections through an intermediate medium; and internal connections between two components or interactions between two components. Those skilled in the art will understand the specific meanings of these terms in the context of this invention.

In the present invention, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or the first and second features not being in direct contact but being in contact via another feature between them. Furthermore, the phrases "above," "above," and "above" a first feature include the phrases "directly above" and "diagonally above" the second feature, or simply indicate that the first feature is higher in level than the second feature. The phrases "below," "below," and "below" a first feature being "directly below" and "diagonally below" the second feature, or simply indicate that the first feature is lower in level than the second feature.

Although the present invention has been described in detail through the preferred embodiments described above, it should be understood that the above description should not be considered as limiting the present invention. After reading the above description, various modifications and alternatives to the present invention will be apparent to those skilled in the art. Therefore, the scope of protection of the present invention is defined by the attached patent application.

10: Gas distribution plate 11: Cover plate 50: Reaction chamber 51: Base 52: Gas showerhead 53: Substrate 100: First gas delivery channel 101, 102: Reference numbers 103: Spacer 104: First gas refill hole 110: First partition plate 120: First gas communication channel 200: Second gas delivery channel 201: Second gas center refill hole 202: Second gas refill hole 203, 204, 205: Reference numbers 210: Second partition plate 220: Second gas communication channel A: First gas B: Second gas β: Intersection angle β1: Intersection angle

Figure 1 is a schematic top view of the central region of a gas shower head provided in accordance with an embodiment of the present invention; Figure 2 is a schematic longitudinal cross-sectional view of a gas shower head provided in accordance with an embodiment of the present invention; Figure 3 is a schematic top view of a gas shower head provided in accordance with an embodiment of the present invention; Figure 4 is a schematic longitudinal cross-sectional view of various types of air holes provided in accordance with an embodiment of the present invention; Figure 5 is a schematic structural diagram of a vapor deposition apparatus provided in accordance with an embodiment of the present invention.

10: Gas distribution plate

100: First gas delivery channel

101: Label

102: Label

103: Interval area

110: First partition plate

200: Second gas delivery channel

201: Second gas center air hole

202: Second gas filling hole

203: Label

210: Second partition

A: First Gas

B: Second gas

Claims (16)

A gas showerhead comprises: A gas distribution plate having gas delivery channels formed thereon, the gas delivery channels comprising a plurality of first gas delivery channels for delivering a first gas and a plurality of second gas delivery channels for delivering a second gas, the plurality of first gas delivery channels and the plurality of second gas delivery channels being arranged alternately and concentrically; A plurality of first gas holes spaced apart on the first gas delivery channels; A plurality of second gas holes spaced apart on the second gas delivery channels, the first gas holes and the second gas holes being used to supply the first gas and the second gas to the surface of a substrate to be processed; The first gas delivery channel located at the center of the gas distribution plate is referred to as the central first gas delivery channel, and the second gas delivery channel adjacent to the central first gas delivery channel is referred to as the central second gas delivery channel; Multiple central second gas supply holes are provided, with inlets of the multiple second gas supply holes disposed on the central second gas delivery channel and outlets of the multiple second gas supply holes spaced between two first gas holes in the central first gas delivery channel, for supplying the second gas to the central area below the gas distribution plate. The gas shower head of claim 1, wherein a partition exists between the first gas supply channel and the second gas supply channel; and outlets of a plurality of central gas replenishment holes for the second gas are spaced apart and distributed in the partition between the central first gas supply channel and the central second gas supply channel, for replenishing the second gas to the central area below the gas distribution plate. A gas shower head as described in claim 2, wherein the gas outlet direction of each of the second gas center air supply holes is toward the central axis of the gas distribution plate. A gas shower head as described in claim 3, wherein the distance between the outlet of each of the second gas center air replenishment holes and the outlets of the two adjacent first gas holes is equal. The gas shower head as described in claim 4, wherein the angle between the inclined direction and the vertical direction of each second gas center air supply hole is in the range of 30° to 60°. The gas shower head according to claim 2, further comprising: a cover plate covering the gas distribution plate, the cover plate being provided with gas communication channels; The gas communication channels include a plurality of first gas communication channels and a plurality of second gas communication channels; The first gas communication channels connect to two adjacent first gas delivery channels across the second gas delivery channels; The second gas communication channels connect to two adjacent second gas delivery channels across the first gas delivery channels. The gas shower head of claim 6, wherein each first gas delivery channel and each second gas delivery channel are non-connected C-shaped grooves; a plurality of first partition plates, each of which is disposed within a corresponding first gas delivery channel; a plurality of second partition plates, each of which is disposed within a corresponding second gas delivery channel; a plurality of first gas replenishment holes, wherein the inlet of each first gas replenishment hole is located on the first gas delivery channel and adjacent to the first partition plate; and the outlet of each first gas replenishment hole is located on the partition area and adjacent to the intersection between the first partition plate and the partition area, so as to replenish the first gas to the area where the corresponding second gas delivery channel is located; Multiple second gas supply holes are provided. The inlet of each second gas supply hole is located on the second gas delivery channel and is disposed near the second partition plate. The outlet of each second gas supply hole is located on the partition area and is disposed near the intersection between the second partition plate and the partition area, so as to supply the second gas to the corresponding area where the first gas delivery channel is located. The gas shower head of claim 7, wherein the outlet of each first gas replenishment hole is located between the outlets of two second gas holes on the corresponding second gas delivery channel; The outlet of each second gas replenishment hole is located between the outlets of two first gas holes on the corresponding first gas delivery channel. The gas shower head of claim 8, wherein: the outlet of each first gas replenishment hole is equidistant from the outlets of two adjacent second gas holes; the outlet of each second gas replenishment hole is equidistant from the outlets of two adjacent first gas holes. A gas shower head as described in claim 9, wherein the gas outlet direction of each of the first gas replenishing holes and the second gas replenishing holes is not toward the central axis of the gas distribution plate. A gas shower head as described in claim 10, wherein the angle between the inclined direction of the first gas supply hole or the second gas supply hole and the vertical direction is less than 45°. The gas shower head according to claim 2, wherein an angle between an inclined direction of the first gas hole or the second gas hole and a vertical direction is 10° to 30°. The gas shower head according to claim 2, wherein: The central first gas supply channel is provided with two circles of first gas holes, the inlet of one circle of first gas holes is located near the inner circumferential wall of the first gas supply channel; and the inlet of the other circle of first gas holes is located near the outer circumferential wall of the first gas supply channel; the central second gas supply channel is further provided with a circle of second gas holes, the inlet of the second gas holes being located near the outer circumferential wall of the second gas supply channel. The gas shower head according to claim 2, wherein a first inlet end connected to the first gas delivery channel is used to deliver the first gas into the first gas delivery channel; a first low-pressure source is connected to a first outlet end of the first gas delivery channel and is used to provide low pressure at the first outlet end; a second inlet end connected to the second gas delivery channel is used to deliver the second gas into the second gas delivery channel; a second low-pressure source is connected to a second outlet end of the second gas delivery channel and is used to provide low pressure at the second outlet end. A vapor deposition apparatus comprises: a reaction chamber; a susceptor disposed at the bottom of the reaction chamber and configured to support a substrate; and a gas shower head as described in any one of claims 1 to 14, the gas shower head being disposed at the top of the reaction chamber, opposite the susceptor, and configured to provide a reaction gas to the surface of the substrate. A method for using the vapor deposition apparatus of claim 15, comprising: step a) introducing a first gas into a first gas delivery channel with a second low-pressure source in an off state; step b) ceasing the introduction of the first gas and introducing a purge gas into the first gas delivery channel with the first low-pressure source in an on state; step c) shutting off the first low-pressure source and introducing a second gas into the second gas delivery channel; supplementing the second gas to a central region below the first gas delivery channel located in the center of the gas distribution plate through a plurality of second gas center supply holes spaced apart on a second gas delivery channel adjacent to the first gas delivery channel located in the center of the gas distribution plate; Step d: Stop supplying the second gas, and introduce the purge gas into the second gas delivery channel, with the second low-pressure source turned on. Repeat steps a-d.