CN203950832U - A kind of small size semiconductor LED eutectic wafer - Google Patents
A kind of small size semiconductor LED eutectic wafer Download PDFInfo
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- CN203950832U CN203950832U CN201420181374.3U CN201420181374U CN203950832U CN 203950832 U CN203950832 U CN 203950832U CN 201420181374 U CN201420181374 U CN 201420181374U CN 203950832 U CN203950832 U CN 203950832U
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- wafer
- small size
- size semiconductor
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- led eutectic
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- 230000005496 eutectics Effects 0.000 title claims abstract description 51
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 238000007598 dipping method Methods 0.000 claims abstract description 8
- 238000002955 isolation Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000009792 diffusion process Methods 0.000 claims abstract description 4
- 229910000679 solder Inorganic materials 0.000 claims abstract description 4
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 3
- 239000010980 sapphire Substances 0.000 claims abstract description 3
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000010949 copper Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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Abstract
The utility model relates to a kind of small size semiconductor LED eutectic wafer, described small size semiconductor LED eutectic wafer is the turriform LED wafer of the reverse mould inverted structure of top bright dipping, comprises from top to bottom: the dielectric isolation layer between sapphire or SiC substrate, N-type conductive layer, P-type conduction layer, ITO current-diffusion layer, positive and negative electrode and positive and negative electrode; Wherein said positive and negative electrode comprises pad, and the solder side of described pad is exposed to the below of described LED eutectic bottom of wafer and/or is exposed to the side of described LED eutectic bottom of wafer; Described small size semiconductor LED eutectic wafer be size at 300 μ m～19 μ m, thickness is not less than 0.001 μ m, power is at the LED of 80mW-0.001mW wafer.
Description
Technical field
The utility model relates to semiconductor applications, relates in particular to a kind of small size semiconductor LED eutectic wafer.
Background technology
At present, in LED video display board manufacture process, owing to being limited by the rear operation of general electronics processing, for example need to first implement encapsulation then to LED wafer, carry out again DIP or SMT assembling etc., made LED industry not think and be necessary to carry out making and the encapsulation of extra small wafer.But just so, cause LED in super-high density, to have no chance to bring into play the advantages such as its super bright long-life stable performance, cannot cover the application of the field of video displaying of similar high-resolution screen.In order to adapt to the application of demonstration of super-high density pixel, must make improvement to the packing forms of current LED wafer.
Utility model content
The purpose of this utility model is to provide the small size semiconductor LED eutectic wafer of a kind of low cost, high light-emitting rate.
In first aspect, the utility model provides a kind of small size semiconductor LED eutectic wafer, and described small size semiconductor LED eutectic wafer is the turriform LED wafer of the reverse mould inverted structure of top bright dipping, comprises from top to bottom:
Dielectric isolation layer between sapphire or SiC substrate, N-type conductive layer, P-type conduction layer, ITO current-diffusion layer (not shown), positive and negative electrode and positive and negative electrode;
Wherein said positive and negative electrode comprises pad, and the solder side of described pad is exposed to the below of described LED eutectic bottom of wafer and/or is exposed to the side of described LED eutectic bottom of wafer;
Described small size semiconductor LED eutectic wafer be size at 300 μ m～19 μ m, thickness is not less than 0.001 μ m, power is at the LED of 80mW-0.001mW wafer.
Preferably, described N-type conductive layer is specially N-type GaN or InGaN or InGaAlP.
Preferably, described P-type conduction layer is specially P type GaN or InGaN or InGaAlP.
Preferably, the pad of described positive and negative electrode is specially AuSn or Cu.
Preferably, the top surface area of described small size semiconductor LED eutectic wafer is not more than (108X188) μ m
2, base area is not more than (240X320) μ m
2, the PN junction area that N-type conductive layer and P-type conduction layer form is not more than (196X266) μ m
2, thickness is 1～140 μ m
2.
Preferably, the width of the pad of described positive electrode is not more than 80 μ m, and length is for being not more than 196 μ m; The width of the pad of described negative electrode is for being not more than 120 μ m, and length is for being not more than 196 μ m; The width of described dielectric isolation layer is for being not more than 100 μ m.
Preferably, described small size semiconductor LED eutectic wafer also comprises current barrier layer CBL, is positioned at P-type conduction layer below.
The small size semiconductor LED eutectic wafer providing at the utility model is the turriform LED wafer with the reverse mould inverted structure of top bright dipping, even bright dipping can be provided, and compare traditional LED wafer and improved 10% light extraction efficiency, also increased rising angle simultaneously.Adopt simultaneously and be structured in portion's bottom face of LED wafer or the electrode structure of side, can directly on the PCB of application product, do eutectic welding procedure completes and the electric connection of other electronic devices and components, be applicable to the flexible Application under different size, effectively saved equipment processing cost and cost of labor.
Brief description of the drawings
Look up-section-the vertical view of the small size semiconductor LED eutectic wafer that Fig. 1 provides for the utility model embodiment;
The floor structure schematic diagram of the LED eutectic die pads that Fig. 2 provides for the utility model embodiment;
The sidepiece syndeton schematic diagram of the LED eutectic die pads that Fig. 3 provides for the utility model embodiment;
The change in physical properties curve of the small size semiconductor LED eutectic wafer that Fig. 4 provides for the utility model embodiment;
The light intensity of the small size semiconductor LED eutectic wafer that Fig. 5 provides for the utility model embodiment and the schematic diagram of lighting angle.
Embodiment
Below in conjunction with drawings and Examples, the utility model is elaborated.
Small size semiconductor LED eutectic wafer of the present utility model is mainly used in demonstration aspect, mainly comprises LED display, Ultra fine pitch LED display, super-high density LED display, the just luminous TV of LED, the just luminous monitor of LED, LED video wall, LED instruction, LED special lighting etc.
Look up-section-the vertical view of the small size semiconductor LED eutectic wafer that Fig. 1 provides for the utility model embodiment.Wherein, Fig. 1-1 is upward view, and Fig. 1-2 is profile, and Fig. 1-3 are vertical view.
As shown in Figure 1, the small size semiconductor LED eutectic wafer of the present embodiment is the turriform LED wafer of the reverse mould inverted structure of top bright dipping, comprises from top to bottom: the dielectric isolation layer between sapphire (Al2O3) or SiC substrate, N-type conductive layer, P-type conduction layer, ITO current-diffusion layer, positive and negative electrode and positive and negative electrode.
Wherein said positive and negative electrode comprises pad, and the solder side of described pad is exposed to the below of described LED eutectic bottom of wafer and/or is exposed to the side of described LED eutectic bottom of wafer.
Wherein, N-type conductive layer is specially N-type GaN or InGaN or InGaAlP; P-type conduction layer is specially P type GaN or InGaN or InGaAlP; The pad of positive and negative electrode is specially AuSn or Cu.
Small size semiconductor LED eutectic wafer also comprises current barrier layer CBL, is positioned at the below (not shown) of electrode pad top, P-type conduction layer.Adopting the object of current barrier layer CBL is to make do not have or seldom have electric current to pass through below barrier layer, luminous just little so herein, therefore can improve amount of light.
In the present embodiment, the top surface area of small size semiconductor LED eutectic wafer is less than or equal to (108X188) μ m
2, base area is less than or equal to (240X320) μ m
2, the PN junction area that N-type conductive layer and P-type conduction layer form is for being less than or equal to (196X266) μ m
2, thickness is 1～140 μ m
2.The width of positive electrode pad is less than or equal to 80 μ m, and length is less than or equal to 196 μ m; The width of negative electrode pad is less than or equal to 120 μ m, and length is less than or equal to 196 μ m; The width of dielectric isolation layer is less than or equal to 100 μ m; The thickness of positive and negative electrode pad is less than or equal to 3 μ m.Every size all has certain deviation allowed band, specifically in table 1.
| Describe | Size | Deviation |
| (μ m) for PN junction area | ≤196X266 | ≤±35 |
| (μ m) for wafer base area | ≤240X320 | ≤±35 |
| (μ m) for wafer top surface area | ≤108X188 | ≤±35 |
| (μ m) for wafer thickness | 1～140 | ≤±15 |
| Anodal AuSn or copper pad are wide, and (μ m) | ≤80 | ≤±15 |
| Anodal AuSn or copper pad are long, and (μ m) | ≤196 | ≤±35 |
| Negative pole AuSn or copper pad are wide, and (μ m) | ≤120 | ≤±35 |
| Negative pole AuSn or copper pad are long, and (μ m) | ≤196 | ≤±35 |
| Between pad, (μ m) for insulator separation layer distance | ≤100 | ≤±15 |
| On pad, (μ m) for the thickness of AuSn or copper | ≤3 | ≤±0.5 |
Table 1
The positive and negative electrode pad of the small size semiconductor LED eutectic wafer that the utility model embodiment provides can be positioned at the below (as shown in Figure 2) of bottom of wafer and/or the side (as shown in Figure 3) of bottom of wafer.Therefore can adopt mode and the substrate of direct subsides welderings (Direct Attach, DA) to join.The reverse mould inverted structure at top makes the front at top and side can have higher amount of light.
In conjunction with if following table 2 is to table 4, can learn the main object characteristic of small size semiconductor LED eutectic wafer of the present utility model.
| Main Physical Characteristics | Parameter |
| Wavelength (nm) | 450-770 |
| Power (mw) | ≤80 |
Table 2
| Electrical characteristic Ta=25 DEG C | Parameter |
| Wavelength (nm) | 450-770 |
| Power (mw) | ≤80 |
| Forward voltage (V) | 1.8～3.6 (nominals 3.1) |
| Forward current (mA) | ≤5 |
| Peak forward current (mA) | ≤10 |
| Reverse voltage (V) | 5 |
| Reverse current (μ A) | ≤2 |
| Half band-width (nm) | 20 |
[0035]?
| Working temperature (DEG C) | -40-+100 |
| Storing temperature (DEG C) | -40-+100 |
| Static load threshold value (HBM) (V) | 1000 |
| Static load class (MIL-STD-883E) | 2 |
Table 3
Gray scale (MCD)
| M | N | P | Q |
| 3.6-6.4 | 6.4-9.2 | 12.8-18.4 | 25.6-36.8 |
Table 4
The change in physical properties curve chart of the small size semiconductor LED eutectic wafer that further, the utility model embodiment provides is as shown in 4; Wherein Fig. 4-1 is forward voltage and forward current graph of relation, and Fig. 4-2 are wave length shift and forward current graph of relation, and Fig. 4-3 are relative light intensity and forward current graph of relation, and Fig. 4-4 are relative light intensity and wavelength relationship curve chart.The light intensity of small size semiconductor LED eutectic wafer that the utility model embodiment provides and the schematic diagram of lighting angle are as shown in Figure 5.
The small size semiconductor LED eutectic wafer that the utility model embodiment provides is the pyramidal structure of the reverse mould upside-down mounting of high brightness top bright dipping, there is low driving voltage, the characteristics such as high light efficiency, even bright dipping can be provided, and compare traditional LED wafer and improved 10% light extraction efficiency, also increased rising angle simultaneously.Adopt simultaneously and be structured in portion's bottom face of LED wafer or the electrode structure of side, can directly on the PCB of application product, do eutectic welding procedure completes and the electric connection of other electronic devices and components, be applicable to the flexible Application under different size, effectively saved equipment processing cost and cost of labor.
In addition, the small size semiconductor LED eutectic wafer that the utility model provides broken through semiconductor light emitting wafer in little spacing (PITCH) application restric-tion below 1.0 millimeters, because can not be limited to again the restriction of the additional volumes that semiconductor light emitting body brings because of rear processing (conventional package), can make the eutectic device of arbitrary dimension.Can realize thus the application of more wide semiconductor light emitting.
Above-described embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only embodiment of the present utility model; and be not used in limit protection range of the present utility model; all within spirit of the present utility model and principle, any amendment of making, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.
Claims (7)
1. a small size semiconductor LED eutectic wafer, is characterized in that, described small size semiconductor LED eutectic wafer is the turriform LED wafer of the reverse mould inverted structure of top bright dipping, comprises from top to bottom:
Dielectric isolation layer between sapphire or SiC substrate, N-type conductive layer, P-type conduction layer, ITO current-diffusion layer, positive and negative electrode and positive and negative electrode;
Wherein said positive and negative electrode comprises pad, and the solder side of described pad is exposed to the below of described LED eutectic bottom of wafer and/or is exposed to the side of described LED eutectic bottom of wafer;
Described small size semiconductor LED eutectic wafer be size at 300 μ m～19 μ m, thickness is not less than 0.001 μ m, power is at the LED of 80mW-0.001mW wafer.
2. small size semiconductor LED eutectic wafer according to claim 1, is characterized in that, described N-type conductive layer is specially N-type GaN or InGaN or InGaAlP.
3. small size semiconductor LED eutectic wafer according to claim 1, is characterized in that, described P-type conduction layer is specially P type GaN or InGaN or InGaAlP.
4. small size semiconductor LED eutectic wafer according to claim 1, is characterized in that, the pad of described positive and negative electrode is specially AuSn or Cu.
5. small size semiconductor LED eutectic wafer according to claim 1, is characterized in that, the top surface area of described small size semiconductor LED eutectic wafer is not more than (108X188) μ m
2, base area is not more than (240X320) μ m
2, the PN junction area that N-type conductive layer and P-type conduction layer form is not more than (196X266) μ m
2, thickness is 1～140 μ m
2.
6. small size semiconductor LED eutectic wafer according to claim 1, is characterized in that, the width of the pad of described positive electrode is not more than 80 μ m, and length is for being not more than 196 μ m; The width of the pad of described negative electrode is for being not more than 120 μ m, and length is for being not more than 196 μ m; The width of described dielectric isolation layer is for being not more than 100 μ m.
7. small size semiconductor LED eutectic wafer according to claim 1, is characterized in that, described small size semiconductor LED eutectic wafer also comprises current barrier layer CBL, is positioned at P-type conduction layer below.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420181374.3U CN203950832U (en) | 2014-04-15 | 2014-04-15 | A kind of small size semiconductor LED eutectic wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420181374.3U CN203950832U (en) | 2014-04-15 | 2014-04-15 | A kind of small size semiconductor LED eutectic wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203950832U true CN203950832U (en) | 2014-11-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201420181374.3U Expired - Lifetime CN203950832U (en) | 2014-04-15 | 2014-04-15 | A kind of small size semiconductor LED eutectic wafer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114613899A (en) * | 2022-03-09 | 2022-06-10 | 湖北长江新型显示产业创新中心有限公司 | Display panel and display device |
| CN114975745A (en) * | 2022-01-07 | 2022-08-30 | 友达光电股份有限公司 | light-emitting device |
-
2014
- 2014-04-15 CN CN201420181374.3U patent/CN203950832U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114975745A (en) * | 2022-01-07 | 2022-08-30 | 友达光电股份有限公司 | light-emitting device |
| CN114613899A (en) * | 2022-03-09 | 2022-06-10 | 湖北长江新型显示产业创新中心有限公司 | Display panel and display device |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160815 Address after: 214100, Jiangsu, Wuxi Province, high road, Binhu District No. 999 (software R & D building) Patentee after: HUANSHI ADVANCED DIGITAL DISPLAY WUXI CO.,LTD. Address before: 100097 room B1F, unit four, building No. three, Far East Road, Haidian District, Beijing Patentee before: Yan Min Patentee before: Cheng Jun Patentee before: Zhou Mingbo |
|
| CX01 | Expiry of patent term |
Granted publication date: 20141119 |
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| CX01 | Expiry of patent term |