CN201812815U - Rectifier for preventing crystal grains from drifting - Google Patents
Rectifier for preventing crystal grains from drifting Download PDFInfo
- Publication number
- CN201812815U CN201812815U CN2010202717482U CN201020271748U CN201812815U CN 201812815 U CN201812815 U CN 201812815U CN 2010202717482 U CN2010202717482 U CN 2010202717482U CN 201020271748 U CN201020271748 U CN 201020271748U CN 201812815 U CN201812815 U CN 201812815U
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- groove
- rectifier
- lead frame
- crystal grains
- diode crystal
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- H10W72/30—
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- H10W72/07337—
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- H10W72/075—
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- H10W72/076—
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- H10W72/07651—
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- H10W72/07653—
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- H10W72/531—
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- H10W72/60—
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- H10W72/631—
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- H10W72/931—
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- H10W74/00—
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- H10W90/736—
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Abstract
Description
技术领域technical field
本实用新型涉及一种整流器,尤其涉及一种防止晶粒漂移的整流器。 The utility model relates to a rectifier, in particular to a rectifier for preventing grain drift. the
背景技术Background technique
整流器是利用二极管的单向导电特性对交流电进行整流,故被广泛应用于交流电转换成直流电的电路中。现有整流器二极管晶粒的引线框的焊接区域常见结构为平面结构。引线框的焊接区域涂点焊锡膏,放上二极管晶粒之后,在入炉焊接过程中锡膏处于融融状态,焊接后二极管晶粒的位置偏移难以准确控制。因此如何解决现有锡膏焊接过程中二极管晶粒漂移的问题,是本实用新型研究的问题。 The rectifier uses the unidirectional conductivity of the diode to rectify alternating current, so it is widely used in circuits that convert alternating current into direct current. The common structure of the welding area of the lead frame of the existing rectifier diode grain is a planar structure. Apply some solder paste to the welding area of the lead frame, and after placing the diode crystal, the solder paste is in a molten state during the soldering process in the furnace, and it is difficult to accurately control the positional deviation of the diode crystal after welding. Therefore, how to solve the problem of diode crystal grain drift in the existing solder paste welding process is the problem studied by the utility model. the
发明内容Contents of the invention
本实用新型提供一种防止晶粒漂移的整流器,该整流器可防止焊接过程中焊锡融融状态时晶粒的漂移问题。 The utility model provides a rectifier for preventing crystal grain drift, and the rectifier can prevent the problem of crystal grain drift when the solder is molten during the welding process. the
为达到上述目的,本实用新型采用的技术方案是:一种防止晶粒漂移的整流器,该整流器的环氧封装体内部由连接片、引线框、二极管晶粒组成,该引线框的焊接区与所述二极管晶粒之间通过焊锡膏连接;所述引线框的焊接区上表面设有凹槽,所述焊锡膏位于该凹槽内及凹槽周边,所述二极管晶粒位于所述凹槽上方并通过所述焊锡膏与引线框的焊接区上连接。 In order to achieve the above purpose, the technical solution adopted by the utility model is: a rectifier for preventing crystal grain drift, the epoxy package of the rectifier is composed of connecting piece, lead frame, and diode crystal grain, the welding area of the lead frame and The diode crystal grains are connected by solder paste; the upper surface of the welding area of the lead frame is provided with a groove, the solder paste is located in the groove and around the groove, and the diode crystal grain is located in the groove above and connected to the solder pads of the lead frame through the solder paste. the
上述技术方案中的有关内容解释如下: The relevant content in the above-mentioned technical scheme is explained as follows:
1、上述方案中,所述凹槽为方形或圆形。 1. In the above solution, the groove is square or circular. the
由于上述技术方案运用,本实用新型与现有技术相比具有下列优点: Due to the use of the above-mentioned technical solutions, the utility model has the following advantages compared with the prior art:
本实用新型是一种防止晶粒漂移的整流器,在该引线框晶粒焊接区域的中心位置有一个小于晶粒尺寸的圆形或方形凹槽。在入炉焊接过程中,凹槽内的锡膏厚度大于其周围平面区域,锡膏处于高温融融状态时,芯片受到凹槽内液态锡膏的粘结力大于周围区域,故此结构可以有效的减少芯片漂移,使焊接后晶粒的位置更趋于焊接区域中心。该结构同时具有其他两优点,第一,当芯片摆放位置稍微偏离焊接区域中心时,由于上述凹槽内锡膏的粘结力,芯片可以自动向中心位置对齐;第二,当焊接区域涂点的锡膏量略多于正常水平时凹槽内可以含有一定量的锡膏,避免由于锡膏过量导致芯片严重偏移或芯片短路污染等问题。 The utility model relates to a rectifier for preventing crystal grain drift. There is a circular or square groove smaller than the grain size at the center of the grain welding area of the lead frame. During the soldering process in the furnace, the thickness of the solder paste in the groove is greater than that of the surrounding plane area. When the solder paste is in a high-temperature melting state, the bonding force of the chip by the liquid solder paste in the groove is greater than that of the surrounding area, so this structure can effectively reduce Chip drift, so that the position of the grain after welding tends to be closer to the center of the welding area. This structure has two other advantages at the same time. First, when the chip is placed slightly away from the center of the soldering area, the chip can be automatically aligned to the center due to the adhesive force of the solder paste in the groove; second, when the soldering area is coated with When the amount of solder paste is slightly more than the normal level, a certain amount of solder paste can be contained in the groove to avoid problems such as serious chip offset or chip short-circuit pollution due to excessive solder paste. the
附图说明Description of drawings
附图1为现有现有引线框结构; Accompanying
附图2为本实用性新型引线框结构主视图; Accompanying
附图3为附图2的侧视图; Accompanying
附图4为本实用性新型结构示意图。 Accompanying
以上附图中:1、连接片;2、引线框;3、二极管晶粒;4、焊接区;5、焊锡膏;6、电流传输端;7、凹槽。 In the above drawings: 1. Connecting piece; 2. Lead frame; 3. Diode grain; 4. Welding area; 5. Solder paste; 6. Current transmission end; 7. Groove. the
具体实施方式Detailed ways
下面结合附图及实施例对本实用新型作进一步描述: Below in conjunction with accompanying drawing and embodiment the utility model is further described:
实施例:一种防止晶粒漂移的整流器, Embodiment: a kind of rectifier that prevents grain from drifting,
该整流器的环氧封装体内部主要由连接片1、引线框2、二极管晶粒3组成,该引线框2一端的焊接区4与所述二极管晶粒3之间通过焊锡膏5连接,该引线框2另一端是作为所述整流器的电流传输端6;其特征在于:所述引线框2的焊接区4上表面设有凹槽7,所述焊锡膏5位于该凹槽7内及凹槽7周边,所述二极管晶粒3位于所述凹槽7上方并通过所述焊锡膏5与引线框2的焊接区4连接。 The interior of the epoxy package of the rectifier is mainly composed of a connecting
所述凹槽7为方形或圆形。 The
所述二极管晶粒3的中心与所述凹槽7中心在所述二极管晶粒3的水平方向上重叠。 The center of the
上述实施例只为说明本实用新型的技术构思及特点,其目的在于让熟悉此项技术的人士能够了解本实用新型的内容并据以实施,并不能以此限制本实用新型的保护范围。凡根据本实用新型精神实质所作的等效变化或修饰,都应涵盖在本实用新型的保护范围之内。 The above-mentioned embodiments are only to illustrate the technical concept and characteristics of the present utility model, and its purpose is to enable those familiar with this technology to understand the content of the present utility model and implement it accordingly, and not to limit the protection scope of the present utility model. All equivalent changes or modifications made according to the spirit of the utility model shall fall within the protection scope of the utility model. the
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202717482U CN201812815U (en) | 2010-07-27 | 2010-07-27 | Rectifier for preventing crystal grains from drifting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202717482U CN201812815U (en) | 2010-07-27 | 2010-07-27 | Rectifier for preventing crystal grains from drifting |
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| Publication Number | Publication Date |
|---|---|
| CN201812815U true CN201812815U (en) | 2011-04-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010202717482U Expired - Fee Related CN201812815U (en) | 2010-07-27 | 2010-07-27 | Rectifier for preventing crystal grains from drifting |
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| CN (1) | CN201812815U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102832207A (en) * | 2011-06-15 | 2012-12-19 | 上海金克半导体设备有限公司 | Block bridge pile |
| CN106471631A (en) * | 2014-06-18 | 2017-03-01 | Lg伊诺特有限公司 | Light emitting device package |
-
2010
- 2010-07-27 CN CN2010202717482U patent/CN201812815U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102832207A (en) * | 2011-06-15 | 2012-12-19 | 上海金克半导体设备有限公司 | Block bridge pile |
| CN106471631A (en) * | 2014-06-18 | 2017-03-01 | Lg伊诺特有限公司 | Light emitting device package |
| CN106471631B (en) * | 2014-06-18 | 2018-12-18 | Lg伊诺特有限公司 | Light emitting device package |
| US10396247B2 (en) | 2014-06-18 | 2019-08-27 | Lg Innotek Co., Ltd. | Light-emitting device package |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110427 Termination date: 20180727 |