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CN201817544U - Movable magnetic control device of sputtering equipment - Google Patents

Movable magnetic control device of sputtering equipment Download PDF

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Publication number
CN201817544U
CN201817544U CN201020579640XU CN201020579640U CN201817544U CN 201817544 U CN201817544 U CN 201817544U CN 201020579640X U CN201020579640X U CN 201020579640XU CN 201020579640 U CN201020579640 U CN 201020579640U CN 201817544 U CN201817544 U CN 201817544U
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magnetic
spare
magnetic spare
magnetic control
pieces
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黄泳钊
郑博仁
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Bay Zu Precision Co Ltd
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Bay Zu Precision Co Ltd
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Abstract

A movable magnetic control device of sputtering equipment comprises a substrate and a magnetic control unit arranged on the substrate, wherein the magnetic control unit comprises two first magnetic pieces at intervals, a second magnetic piece which is positioned between the first magnetic pieces and has the same polarity, at least one third magnetic piece which is positioned between the second magnetic piece and the first magnetic piece at intervals and has opposite polarity, and a plurality of arc magnetic pieces which are connected with the first magnetic pieces and the second magnetic pieces, wherein the width between the first magnetic pieces and the third magnetic pieces is smaller than the width between the second magnetic pieces and the third magnetic pieces. The utility model discloses a novel structure is not only established to the design of this magnetic control device, can also improve the magnetic line of force intensity that the magnetic control device is close to the border position, borrows this to improve the magnetic control device reciprocating motion and treat the not good shortcoming of short produced sputtering degree of consistency of border position corresponding time of sputter thing.

Description

溅镀设备的移动式磁控装置 Mobile magnetron device for sputtering equipment

技术领域technical field

本实用新型涉及一种磁控装置,特别是涉及一种安装在溅镀设备上,并可往复移位的溅镀设备的移动式磁控装置。The utility model relates to a magnetron device, in particular to a movable magnetron device of the sputtering device which is installed on the sputtering device and can be moved back and forth.

背景技术Background technique

溅镀设备是一种使用电浆对靶材进行离子轰击,使靶材表面的原子可以被撞击出来,最后沉积在待溅镀物上形成薄膜的专用器具。根据激发电浆方式的不同,现有的溅镀设备有许多种不同的形式,其中,磁控式溅镀设备是在靠近靶材的位置安装一个磁控装置,利用磁场与电场间的电磁效应所产生的电磁力,来影响电浆内的电子的移动,使电子可以进行螺旋式的运动,进而增进电子和气体分子间的碰撞次数,以提高气体分子离子化的机会。为了提高靶材的利用率,有些溅镀设备的磁控装置被设计成移动式。Sputtering equipment is a special device that uses plasma to bombard the target with ions, so that the atoms on the surface of the target can be knocked out, and finally deposited on the object to be sputtered to form a thin film. According to the different ways of exciting the plasma, the existing sputtering equipment has many different forms. Among them, the magnetron sputtering equipment installs a magnetron device near the target, and uses the electromagnetic effect between the magnetic field and the electric field. The generated electromagnetic force affects the movement of electrons in the plasma, so that the electrons can move in a spiral manner, thereby increasing the number of collisions between electrons and gas molecules, so as to increase the chance of ionization of gas molecules. In order to improve the utilization rate of the target, the magnetron device of some sputtering equipment is designed to be mobile.

参阅图1及图2,现有的溅镀设备通常是在一图中未示出的腔座内安装一个靶材91,通过电浆的轰击,将靶材91表面的原子轰出,最后沉积在一个间隔的待溅镀物92上,为了提高溅镀反应速率,该溅镀设备还包含一个靠近该靶材91的磁控装置1,上述磁控装置1可以受到驱动沿着一平行于待溅镀物92的长度方向93往复移动,且其包含一片矩形的基板11,该基板11具有两个间隔的长边111,以及两个垂直衔接在所述长边111的相反侧的短边112,所述磁控装置1还包含一个安装在该基板11上的磁控单元12,上述磁控单元12包括两个沿着长度方向93延伸并分别靠近一个长边111的第一磁件121、一条平行地位于所述第一磁件121中央的第二磁件122、两条平行地位于所述第一磁件121及第二磁件122之间的第三磁件123,以及数个靠近其中一个短边112的垂直磁件124。上述第一磁件121、第二磁件122及第三磁件123都是由数个磁铁120并接而成的,其中第一磁件121、第二磁件122及垂直磁件124的极性相同,例如都是N极,而第三磁件123的极性相反,例如S极。所述相邻的第一磁件121、第三磁件123之间,以及相邻的第二磁件122及第三磁件123之间的宽度W都相同。Referring to Fig. 1 and Fig. 2, the existing sputtering equipment usually installs a target material 91 in a chamber seat not shown in the figure, and through the bombardment of plasma, the atoms on the surface of the target material 91 are blasted out, and finally deposited On a spaced object to be sputtered 92, in order to improve the sputtering reaction rate, the sputtering equipment also includes a magnetron device 1 close to the target material 91, and the above-mentioned magnetron device 1 can be driven along a The length direction 93 of the sputter 92 moves back and forth, and it includes a rectangular substrate 11, the substrate 11 has two long sides 111 at intervals, and two short sides 112 vertically connected to the opposite sides of the long sides 111 The magnetron device 1 also includes a magnetron unit 12 installed on the substrate 11, the magnetron unit 12 includes two first magnets 121 extending along the length direction 93 and respectively close to a long side 111, A second magnet 122 parallel to the center of the first magnet 121, two third magnets 123 parallel between the first magnet 121 and the second magnet 122, and several close One of the short sides 112 is a vertical magnetic piece 124 . Above-mentioned first magnetic piece 121, second magnetic piece 122 and third magnetic piece 123 are all formed by parallel connection of several magnets 120, wherein the poles of first magnetic piece 121, second magnetic piece 122 and vertical magnetic piece 124 The polarities are the same, for example, they are all N poles, and the polarities of the third magnetic member 123 are opposite, for example, S poles. The width W between the adjacent first magnetic pieces 121 and the third magnetic pieces 123 and between the adjacent second magnetic pieces 122 and the third magnetic pieces 123 is the same.

现有的溅镀设备在进行溅镀加工时,通常在真空腔体内部通入惰性气体,并且在靶材91及待溅镀物92间通以电源,此时,产生的电浆会被靶材91吸引进行撞击,被撞离靶材91的原子就会被待溅镀物92吸引并沉积在待溅镀物92的表面上,而该磁控装置1会受到驱动沿着该长度方向93往复移动,从而提高溅镀时的反应速率。由于该磁控装置1如何移动及如何提高反应速率为现有技术,所以不再说明。When the existing sputtering equipment is performing sputtering, inert gas is usually introduced into the vacuum chamber, and a power supply is passed between the target material 91 and the object to be sputtered 92. At this time, the generated plasma will be absorbed by the target. The atoms knocked away from the target 91 will be attracted by the object 92 to be sputtered and deposited on the surface of the object 92 to be sputtered, and the magnetron device 1 will be driven along the length direction 93 Reciprocating movement, thereby increasing the reaction rate during sputtering. Since how the magnetic control device 1 moves and how to increase the reaction rate is the prior art, it will not be described again.

现有的磁控装置1在使用时会沿着长度方向93往复移动,以图2的方向作说明,当磁控装置1往图2的左侧移动并到达终点时,会立刻往右侧移动,在到达右侧的终点时再往左移动,因此,该磁控装置1对应待溅镀物92的每个位置的时间不太一样,也就是说,该磁控装置1对应待溅镀物92两侧的时间比对应待溅镀物92中间部位的时间短。而现有的磁控装置1的各个磁件121、122、123间的宽度W相同,所产生的磁力线强度大致相同,因此,当磁控装置1对应待溅镀物92两侧的时间较短时,靶材91受到撞击并沉积在待溅镀物92表面的时间也相对较短,造成溅镀均匀度不佳。另一方面,所述垂直磁件124和极性相反的第三磁件123垂直设置,会因为垂直磁件124及第三磁件123之间的某些部位(例如对角位置)距离较长,而削弱磁力线的强度。The existing magnetic control device 1 will reciprocate along the length direction 93 when in use, as illustrated in the direction of Figure 2, when the magnetic control device 1 moves to the left side of Figure 2 and reaches the end point, it will immediately move to the right , and then move to the left when reaching the end point on the right side, therefore, the time of the magnetron device 1 corresponding to each position of the object to be sputtered 92 is not the same, that is to say, the magnetron device 1 corresponds to the object to be sputtered The time on both sides of 92 is shorter than the time corresponding to the middle part of object 92 to be sputtered. And the width W between each magnetic piece 121,122,123 of existing magnetron device 1 is identical, and the intensity of the magnetic force line that produces is roughly the same, therefore, when magnetron device 1 corresponds to the time on both sides of object 92 to be sputtered is shorter , the time for the target 91 to be impacted and deposited on the surface of the object 92 to be sputtered is relatively short, resulting in poor sputtering uniformity. On the other hand, the vertical magnetic piece 124 and the third magnetic piece 123 with opposite polarity are vertically arranged, because the distance between some parts (such as diagonal positions) between the vertical magnetic piece 124 and the third magnetic piece 123 is relatively long. , and weaken the strength of the magnetic field lines.

发明内容Contents of the invention

本实用新型的目的在于提供一种可以提高溅镀均匀度的溅镀设备的移动式磁控装置。The purpose of the utility model is to provide a mobile magnetron device of sputtering equipment which can improve sputtering uniformity.

本实用新型移动式磁控装置包含一个基板,以及一个安装在该基板上的磁控单元,该磁控单元包括两个彼此间隔的第一磁件、一个位于所述第一磁件之间且极性相同的第二磁件、至少一个介于第二磁件与第一磁件之间且极性相反的第三磁件,以及数个连接在第一磁件及第二磁件之间的弧连磁件,上述第三磁件和相邻的第一磁件之间的宽度小于上述第三磁件和第二磁件之间的宽度。The utility model mobile magnetic control device comprises a substrate, and a magnetic control unit installed on the substrate, the magnetic control unit includes two first magnetic parts spaced apart from each other, a magnetic control unit located between the first magnetic parts and A second magnetic piece with the same polarity, at least one third magnetic piece with opposite polarity between the second magnetic piece and the first magnetic piece, and several connected between the first magnetic piece and the second magnetic piece The arc-connected magnetic parts, the width between the third magnetic part and the adjacent first magnetic part is smaller than the width between the third magnetic part and the second magnetic part.

本实用新型该磁控单元的第三磁件的数量是两个,分别位于该第二磁件的相反侧。The number of the third magnetic parts of the magnetic control unit of the utility model is two, which are respectively located on opposite sides of the second magnetic parts.

本实用新型的弧连磁件都具有一个与第一磁件垂直连接的平连段,以及一个连接在该平连段及第二磁件之间的弧连段。The arc connecting magnetic parts of the utility model all have a flat connecting section vertically connected to the first magnetic part, and an arc connecting section connected between the flat connecting section and the second magnetic part.

本实用新型该基板包括两个彼此平行且分别靠近其中一个第一磁件的长边,且所述第一磁件、第二磁件及第三磁件间隔设置,并且和所述长边平行。The substrate of the utility model includes two long sides parallel to each other and respectively close to one of the first magnetic parts, and the first magnetic part, the second magnetic part and the third magnetic part are arranged at intervals and parallel to the long sides .

本实用新型的基板还包括两个垂直连接在所述长边之间的短边,而所述弧连磁件左右对称地靠近其中一个短边。The substrate of the present invention also includes two short sides vertically connected between the long sides, and the arc-connected magnetic part is symmetrically close to one of the short sides.

本实用新型的有益功效在于:通过改变相邻磁件之间的宽度,可以改善磁控装置因为往复移动和对应待溅镀物的各部位的时间不同,所可能产生的溅镀均匀度不佳的缺点。The beneficial effects of the utility model are: by changing the width between adjacent magnetic parts, the magnetron device can improve the poor sputtering uniformity that may occur due to the different time between the reciprocating movement and the corresponding parts of the object to be sputtered. Shortcomings.

附图说明Description of drawings

图1是一种现有的溅镀设备的一个磁控装置的主视示意图;Fig. 1 is a front view schematic diagram of a magnetron device of a kind of existing sputtering equipment;

图2是该现有的磁控装置的一个使用状态参考图;Fig. 2 is a reference diagram of a state of use of the existing magnetic control device;

图3是本实用新型磁控装置的一个较佳实施例的立体图;Fig. 3 is a perspective view of a preferred embodiment of the utility model magnetic control device;

图4是该较佳实施例的一个主视示意图;Fig. 4 is a schematic front view of the preferred embodiment;

图5是该较佳实施例的一个使用状态参考图。Fig. 5 is a reference diagram of a usage state of the preferred embodiment.

具体实施方式Detailed ways

下面结合附图及实施例对本实用新型进行详细说明。Below in conjunction with accompanying drawing and embodiment the utility model is described in detail.

参阅图3、4、5,本实用新型移动式磁控装置的一较佳实施例安装在一个溅镀设备的一个腔座(图未示)上,上述溅镀设备具有一靶材2,通过产生的电浆对靶材2的表面进行撞击,被轰离靶材2的原子最后会沉积在一个待溅镀物3的表面并形成薄膜,由于靶材2上的原子如何被轰离并沉积在待溅镀物3上为现有技术,不再详述。Referring to Fig. 3, 4, 5, a preferred embodiment of the utility model mobile magnetron device is installed on a cavity seat (not shown) of a sputtering equipment, and above-mentioned sputtering equipment has a target material 2, by The generated plasma strikes the surface of the target 2, and the atoms that are bombarded off the target 2 will finally deposit on the surface of an object to be sputtered 3 and form a thin film, because how the atoms on the target 2 are bombarded off and deposited It is a prior art on the object to be sputtered 3 and will not be described in detail.

本实施例的磁控装置靠近该靶材2,并和待溅镀物3分别位于该靶材2的相反侧,所述磁控装置包含:一个基板4,以及一个安装在该基板4上的磁控单元5。该基板4是一个矩形的板体,故具有两个平行的长边41,以及两个垂直连接在所述长边41的相反侧的短边42。The magnetron device of the present embodiment is close to the target material 2, and is respectively located on the opposite side of the target material 2 with the object to be sputtered 3. The magnetron device comprises: a substrate 4, and a substrate mounted on the substrate 4 Magnetic control unit 5. The base plate 4 is a rectangular board, so it has two parallel long sides 41 and two short sides 42 vertically connected to opposite sides of the long sides 41 .

本实施例的磁控单元5包括:两个分别靠近其中一个长边41的第一磁件51、一个位于所述第一磁件51中央的第二磁件52、两条平行且间隔地位于相邻的第一磁件51及第二磁件52之间的第三磁件53,以及数条靠近基板4的其中一个短边42的弧连磁件54。其中,所述第三磁件53,分别位于该第二磁件52的相反侧,弧连磁件54左右对称地靠近基板4的其中一个短边42。该第一磁件51、第二磁件52、第三磁件53以及弧连磁件54都是由数个具有磁性的磁铁50对接而成的,所述第一磁件51、第二磁件52及弧连磁件54都具有一个第一极性,在本实施例中该第一极性是N极,而第三磁件53具有一个相反于第一极性的第二极性,在本实施例中该第二极性是S极。本实施例的磁控装置,所述第一磁件51、第二磁件52及第三磁件53间隔设置,并且和所述长边41平行;所述第三磁件53和相邻的第一磁件51之间具有一个第一宽度W1,而上述第三磁件53和第二磁件52之间具有一个第二宽度W2,该第一宽度W1小于该第二宽度W2。本实施例的所述弧连磁件54都具有一个与其中一个第一磁件51垂直连接的平连段541,以及一个自该平连段541往第二磁件52方向弯弧延伸的弧连段542。The magnetic control unit 5 of this embodiment includes: two first magnetic pieces 51 close to one of the long sides 41 respectively, a second magnetic piece 52 located in the center of the first magnetic piece 51, two parallel and spaced The third magnetic piece 53 between the adjacent first magnetic piece 51 and the second magnetic piece 52 , and several arc-connected magnetic pieces 54 close to one of the short sides 42 of the substrate 4 . Wherein, the third magnetic parts 53 are respectively located on opposite sides of the second magnetic part 52 , and the arc-connected magnetic parts 54 are symmetrically close to one of the short sides 42 of the substrate 4 . The first magnetic part 51, the second magnetic part 52, the third magnetic part 53 and the arc connecting magnetic part 54 are all formed by butt joints of several magnetic magnets 50. The first magnetic part 51, the second magnetic part Both the part 52 and the arc connecting magnetic part 54 have a first polarity, which is N pole in this embodiment, and the third magnetic part 53 has a second polarity opposite to the first polarity, In this embodiment, the second polarity is S pole. In the magnetic control device of this embodiment, the first magnetic part 51, the second magnetic part 52 and the third magnetic part 53 are arranged at intervals and parallel to the long side 41; the third magnetic part 53 and the adjacent There is a first width W1 between the first magnetic parts 51 , and a second width W2 between the third magnetic part 53 and the second magnetic part 52 , and the first width W1 is smaller than the second width W2 . The arc connecting magnetic parts 54 in this embodiment have a flat connecting segment 541 vertically connected to one of the first magnetic parts 51, and an arc extending from the flat connecting segment 541 to the direction of the second magnetic part 52. Combination 542.

由上所述可知,本实用新型的磁控单元5包括:两个彼此间隔的第一磁件51、一个位于所述第一磁件51之间且极性相同的第二磁件52、以及至少一个介于第二磁件52与第一磁件51之间且极性相反的第三磁件53,以及数个连接在第一磁件51及第二磁件52之间的弧连磁件54。It can be seen from the above that the magnetic control unit 5 of the present invention includes: two first magnetic parts 51 spaced apart from each other, a second magnetic part 52 located between the first magnetic parts 51 and having the same polarity, and At least one third magnetic piece 53 with opposite polarity between the second magnetic piece 52 and the first magnetic piece 51, and several arc-connected magnetic pieces connected between the first magnetic piece 51 and the second magnetic piece 52 piece 54.

本实施例的磁控装置在使用时,也是沿着该待溅镀物3的一个长度方向30往复移动,当该磁控装置移动而靠近该待溅镀物3的其中一个侧边时,由于磁控装置的第一磁件51及第三磁件53之间的第一宽度W1小于第二磁件52及第三磁件53之间的第二宽度W2,因此,在第一磁件51及第三磁件53之间可以产生较强的磁力强度,从而改善磁控装置在移动时,对应待溅镀物3的两侧时间较短所衍生的溅镀均匀度不佳的缺点。另一方面,本实施例所述弧连磁件54的设计,可以拉近所述弧连磁件54与第三磁件53之间的距离,借此提高磁控装置两侧的磁力强度。故本实用新型该移动式磁控装置的设计不但结构新颖,还具有提高溅镀均匀度的功效。When the magnetron device of this embodiment is in use, it also moves back and forth along a length direction 30 of the object to be sputtered 3. When the magnetron device moves close to one of the sides of the object to be sputtered 3, due to The first width W1 between the first magnetic part 51 and the third magnetic part 53 of the magnetic control device is smaller than the second width W2 between the second magnetic part 52 and the third magnetic part 53, therefore, in the first magnetic part 51 and the third magnetic member 53 can generate strong magnetic strength, so as to improve the shortcoming of poor sputtering uniformity derived from the relatively short time for the magnetron to move on both sides of the object to be sputtered 3 . On the other hand, the design of the arc-connecting magnetic part 54 in this embodiment can shorten the distance between the arc-connecting magnetic part 54 and the third magnetic part 53 , thereby increasing the magnetic strength on both sides of the magnetic control device. Therefore, the design of the mobile magnetron device of the present invention not only has a novel structure, but also has the effect of improving the uniformity of sputtering.

Claims (5)

1. the portable magnetic control means of a sputtering equipment, comprise: a substrate, and magnetic control unit that is installed on this substrate, the first magnetic spare, one that this magnetic control unit comprises two each intervals is between the described first magnetic spare and the second identical magnetic spare of polarity, and at least one is between the second magnetic spare and the first magnetic spare and opposite polarity the 3rd magnetic spare; It is characterized in that: this magnetic control unit comprises that also several arcs that are connected between the first magnetic spare and the second magnetic spare connect magnetic spare, and the width between above-mentioned the 3rd magnetic spare and the adjacent first magnetic spare is less than the width between above-mentioned the 3rd magnetic spare and the second magnetic spare.
2. the portable magnetic control means of sputtering equipment according to claim 1, it is characterized in that: the quantity of unitary the 3rd magnetic spare of this magnetic control is two, lays respectively at the opposition side of this second magnetic spare.
3. the portable magnetic control means of sputtering equipment according to claim 1 and 2 is characterized in that: described arc magnetic spare all has one and flatly connects section with the first magnetic spare is connected vertically, and one is connected this flat arc that connects between the section and the second magnetic spare and connects section.
4. the portable magnetic control means of sputtering equipment according to claim 3, it is characterized in that: this substrate comprise two parallel to each other and respectively near the long limit of one of them first magnetic spare, and the described first magnetic spare, the second magnetic spare and the 3rd magnetic spare are provided with at interval, and parallel with described long limit.
5. the portable magnetic control means of sputtering equipment according to claim 4, it is characterized in that: this substrate also comprises two minor faces that are vertically connected between the described long limit, and described arc connects magnetic spare left and right symmetrically near one of them minor face.
CN201020579640XU 2010-10-28 2010-10-28 Movable magnetic control device of sputtering equipment Expired - Fee Related CN201817544U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
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TWI482871B (en) * 2012-10-05 2015-05-01 Mega Energy Vacuum Co Ltd Sputtering target with movable cells-like magnetic controller
CN112366059A (en) * 2020-10-29 2021-02-12 珠海和泽科技有限公司 Magnetic plate and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI482871B (en) * 2012-10-05 2015-05-01 Mega Energy Vacuum Co Ltd Sputtering target with movable cells-like magnetic controller
CN112366059A (en) * 2020-10-29 2021-02-12 珠海和泽科技有限公司 Magnetic plate and manufacturing method thereof

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