CN201383911Y - Heat radiation module and electric device using same - Google Patents

Abstract

A heat radiation module and an electric device using the same are provided, the heat radiation module is matched with at least one heating component for application, and the heat radiation module comprises a thermoelectric cooling component and a heat conduction component. The thermoelectric cooling element has a hot surface and a cold surface, wherein the cold surface is electrically connected to the heat generating element and the heat conducting element is in contact with the hot surface. Wherein, the material of the thermoelectric cooling component comprises silicon element and at least one transition metal element. The heat generated by the heating component can be discharged by dissociation and matched with the heat transfer way of conduction by the thermoelectric cooling and heat conduction mechanism, so that the heat can be dissipated quickly and effectively.

Description

Heat dissipation module and electrical device for its application

Technical field:

The utility model relates to a heat dissipation structure, in particular to a heat dissipation module and an electrical device applied thereto.

Background technique:

Since the current electronic components are often operated at a relatively high frequency, the resulting thermal energy is quite considerable. Direct contact, so when the electronic components operate to generate heat energy, in addition to assisting the dissipation of heat energy through the heat dissipation components adjacent to the electronic components, it is still necessary to dissipate heat through the circuit substrate. However, as we all know, the circuit The heat conduction rate of the substrate is not good, which leads to electrical failure problems often caused by heat accumulation in electronic components during operation.

In view of the above-mentioned problems, a thermoelectric cooling technology has been developed in the known technology to be applied to cool the operating temperature of small electronic components (such as: laser diode charge-coupled components). (Thermoelectric Cooler) must be supplied with external DC power to make it produce thermal cooling effect. At the same time, it needs to connect a heat sink or heat conduction sheet at the heat release end so that the heat energy generated by the electronic components can be exported to the outside. When the electronic When the number of components increases, or when electronic components generate more heat due to higher operating frequency, known thermoelectric coolers must even be equipped with a forced cooling mechanism (such as: an electric fan) to force cooling, Otherwise, the electronic components will fail due to thermal degradation.

In view of the technical bottlenecks encountered by the above-mentioned known technologies, the utility model discloses a heat dissipation module and an electrical device applied thereto, which can quickly and effectively dissipate the heat energy generated by the heating components to the external environment, avoiding the heat dissipation of the heating components The problem of thermal decay of components due to excessive heat accumulation.

Utility model content:

The technical problem to be solved by the utility model is: aiming at the deficiencies of the above-mentioned prior art, provide a heat dissipation module and its applied electrical device, which can dissipate the heat energy generated by the heating component by means of the mechanism of thermoelectric cooling and heat conduction. The heat transfer method of heat dissipation and conduction enables the heat energy to dissipate quickly and effectively.

In order to solve the above technical problems, the technical solution adopted by the utility model is: a heat dissipation module, which is used in conjunction with at least one heating component, and its characteristic is: the heat dissipation module includes: a thermoelectric cooling component, which has a heat a cold surface, the cold surface of the thermoelectric cooling element is electrically connected to the heat generating element; and a heat conducting element, which is in contact with the hot surface of the thermoelectric cooling element.

The utility model adopts an electrical device, which includes at least one heating component, a thermoelectric conduction circuit, and a heat dissipation module. The heat dissipation module is used in conjunction with the heating component. A component, which has a hot surface and a cold surface, the cold surface of the thermoelectric cooling component is provided with the thermoelectric conduction circuit, and is electrically connected to the heating component through the thermoelectric conduction circuit; and a heat conduction component, which is connected to the The hot surface of the thermoelectric cooling component is in contact.

In this way, the heat dissipation module and the electrical device applied thereto can transmit the heat energy generated by the heating element simultaneously through two different heat conduction mechanisms of thermoelectric cooling and conduction, so as to ensure that the surface connected to the heating element has a lower temperature, and Most of the heat energy generated by the heat-generating component is transferred to the heat-conducting component through the heat surface in contact with the heat-conducting component, and then dissipated by the heat-conducting component. Compared with the known technology, the utility model can use the thermoelectric cooling components made of semiconductor materials to achieve rapid and effective heat dissipation through the effect of mutual conversion between heat and electricity without the need to provide additional power (DC power supply) Effect, so that heat-generating components can be operated in a lower temperature environment.

Description of drawings:

Fig. 1 is a schematic diagram of the implementation state of the heat dissipation module of the present invention.

Fig. 2 is a schematic diagram of an implementation state in which the electrical device of the present invention is applied to a light emitting device.

Label description:

10: Thermal conduction components 20: Thermoelectric cooling components

30: heating component 30’: light emitting component

40: Thermoelectric conduction circuit 401: The first circuit

402: second circuit 50: outer shell

60: Power supply 70: Reflector

CS: cold surface HS: hot surface

L: Lighting device M: Cooling module

Detailed ways:

Due to the high-frequency or long-term operation of electronic components, considerable heat energy will be generated. If the heat energy cannot be dissipated effectively and quickly, once the problem of heat accumulation occurs, the electronic components may be damaged due to the The temperature of the environment is too high, or its own temperature is too high to cause thermal decay. Therefore, in order to solve the above-mentioned difficulties, the present invention discloses a heat dissipation module and an electrical device applied thereto, which can provide an effective and rapid heat dissipation mechanism.

First, please refer to FIG. 1 , which is a schematic diagram of the implementation state of the heat dissipation module of the present invention. The heat dissipation module disclosed herein includes a thermoelectric cooling element 20 and a heat conduction element 10 . The thermoelectric cooling element 20 has a hot surface HS and a cold surface CS, wherein the cold surface CS is electrically connected to the heating element 30 , and the heat conducting element 10 is in contact with the hot surface HS. Wherein, in order to enable the thermoelectric cooling component 20 and the heating component 30 to be electrically connected, a

There is a thermoelectric conduction circuit 40; in addition, the material of the above-mentioned heat conduction component 10 can be metal or alloy.

The above-mentioned thermoelectric cooling component 20 is a semiconductor thermoelectric cooling component 20, and its material contains silicon element and at least one transition metal element, and in order to improve the performance of the electrothermal cooling component, all materials must be nano-sized and homogenized processed and sintered at a high temperature to form a low-dimensional superlattice structure. However, in order to make the above-mentioned materials suitable for various application fields, they can be formed by high-pressure compression molding. For example, The specifications and dimensions of its appearance can be square, circular or other non-specific shapes.

The thermoelectric cooling assembly 20 disclosed in FIG. 1 includes the following characteristics in terms of electrical characteristics:

(1) The breakdown voltage (breakdown voltage) that can withstand is greater than 200 volts/mm;

(2) The permittivity is less than or equal to 12 picofarads;

(3) The allowable value of surge current is greater than 15,000 amperes;

(4) In a constant discharge state, the electrostatic withstand capacity is greater than 10,000 volts;

(5) Thermal power (thermal power, α) is greater than 470.

On the other hand, the physical characteristics of the thermoelectric cooling component 20 include the following characteristics:

(1) The insulation is greater than or equal to 10 ⁹ ohms;

(2) The water absorption rate is not more than 0.02%;

(3) Density greater than or equal to 3.96 g/cubic centimeter;

(4) Mohs hardness is greater than or equal to 9;

(5) The surface roughness is between 1 and 100 nanometers.

According to the above electrical and physical characteristics, it can be seen that the operating temperature range of the thermoelectric cooling assembly 20 disclosed in the utility model is quite large, and because of its high hardness, the thermoelectric cooling assembly 20 of the utility model can withstand quite strong The impact of the external force is not easy to break. In addition, the thermoelectric cooling element 20 disclosed here has the characteristic of anti-ultraviolet.

In addition, as is well known, the performance index of the thermoelectric cooling assembly 20 can refer to the size of its thermoelectric figure of merit (Z), in other words, the higher the thermoelectric figure of merit of the thermoelectric cooling assembly 20, the more the thermoelectric cooling assembly 20 for better heat dissipation. The thermoelectric figure of merit is expressed by formula (1):

Z＝α ² σ/K(1)

Wherein, α is the thermal power of the thermoelectric cooling component 20 , σ is the electrical conductivity of the thermoelectric cooling component 20 , and K is the thermal conductivity of the thermoelectric cooling component 20 .

Based on the formula (1), it can be seen that if a higher thermoelectric figure of merit Z is desired, the thermoelectric cooling component 20 must have a higher thermal power α and electrical conductivity σ, but the thermal conductivity K should not be too high. In other words, An ideal thermoelectric cooling assembly 20 must have high

Electrical conductivity and poor thermal conductivity. However, most of the heat dissipation materials widely used in the market are mainly copper, aluminum or their alloys. Therefore, the thermoelectric effect of the produced heat dissipation structures (such as heat sinks or heat pipes, etc.) The valence energy band and the conduction band overlap, which causes electrons and holes to cancel each other out. Therefore, the thermal power value of this kind of heat dissipation structure with metal as the main material is extremely low. Therefore, the thermoelectric conversion efficiency that can be achieved is generally low. Suitable for application as a heat transfer element.

However, in contrast to the thermoelectric cooling element 20 disclosed in the present invention, its main constituent materials include silicon and transition metal elements. Therefore, the thermal power of the thermoelectric cooling element 20 can be increased by the spin action of the internal electrons. . More specifically, in the composition of the thermoelectric cooling element 20, ionic compounds with different ions and ion valences are used to perform reactions such as substitution and melting, so as to control the heat and electricity of the semiconductor material. Therefore, the thermoelectric cooling component 20 disclosed in the utility model can increase the degree of freedom of movement of electrons (or holes) in the crystal, and correspondingly increase the conductivity of the thermoelectric cooling component 20 . Therefore, compared with the known heat dissipation structure with metal as the main material, the thermoelectric cooling assembly 20 disclosed in the present utility model has extremely high thermal power and electrical conductivity. Naturally, the thermoelectric figure of merit of the thermoelectric cooling assembly 20 is greater than that of the known Thermoelectric figure of merit of heat dissipation structures made of metal materials.

It is worth noting that the thermoelectric cooling element 20 disclosed in the present invention can control the concentration of holes (or electrons) between lattices by doping impurities in the semiconductor crystal structure, so that the thermoelectric cooling element 20 can The electrical conductivity is not easily affected by gas pressure. Furthermore, since the thermoelectric cooling assembly 20 disclosed in the utility model belongs to a semiconductor thermoelectric cooling assembly 20, it can form a layered structure by means of covalent bonds with strong bonding force, so it can exert the effect of hindering heat transfer. , thereby greatly improving the thermoelectric figure of merit of the thermoelectric cooling component 20 .

In addition, the above-mentioned thermoelectric conduction circuit 40 formed between the thermoelectric cooling element 20 and the heating element 30 can be formed on the cold surface CS of the thermoelectric cooling element 20 by direct wiring. A first circuit 401 (such as a silver circuit) is laid on the cold surface CS of the thermoelectric cooling component 20, and a second circuit 402 is plated on the first circuit 401 by electroplating, wherein the constituent material of the second circuit 402 is It can be selected from nickel, tin, other metals or alloy materials according to different applications. Therefore, the thermoelectric conduction circuit 40 disclosed here has the characteristics of low resistance, so it can provide a very good ohmic contact interface between the thermoelectric cooling element 20 and the heating element 30, and at the same time, it can be made of different materials. The second circuit 402 is formed, eg, nickel or tin, to provide a good soldering interface.

Therefore, when the heating element 30 (for example: the P/N junction of the light-emitting diode) is operating and generates a voltage (for example: the forward voltage generated by the P/N junction of the light-emitting diode), due to the electrons and holes The thermal energy generated by the combination will be transferred to the thermoelectric cooling assembly 20 through the thermoelectric conduction circuit 40. At this time, for the two (or more than two) different As far as the metal is concerned, the temperature difference of a closed circuit is formed through the close electrical connection relationship, thereby generating thermoelectromotive force, so that the current circulates inside the thermoelectric cooling component 20, and then using the thermoelectric cooling component 20 can By absorbing heat to generate current in a specific direction, the temperature of the cold surface CS of the thermoelectric cooling element 20 is greatly reduced to achieve the purpose of temperature control, thus preventing thermal decay of the heating element 30 .

Furthermore, the present invention further proposes an electrical device, which includes at least one heating element, a thermoelectric conduction circuit, and a heat dissipation module, and the heat dissipation module includes a thermoelectric cooling element and a heat conduction element. The thermoelectric cooling component has a hot surface and a cold surface, wherein a thermoelectric conduction circuit is laid on the cold surface, so that the thermoelectric cooling component is electrically connected with the heating component through the thermoelectric conduction circuit, and the heat conduction component is in contact with the hot surface. Moreover, the material of the above-mentioned thermoelectric cooling element includes silicon element and at least one transition metal element.

Since the materials, electrical characteristics and physical characteristics of the thermoelectric cooling components have been described in detail above, they will not be repeated here. However, in order to make the electrical device disclosed in the present utility model more specific, a light-emitting device will be used as an example to illustrate the electrical device of the present utility model. , The following embodiment is only a state of the utility model, and is not intended to limit the scope of the utility model.

Please refer to FIG. 2 , which is an implementation state diagram of the electrical device of the present invention applied to a light emitting device. The light emitting device L includes at least one light emitting element 30', a thermoelectric conduction circuit (not shown in the figure) and a heat dissipation module M, and the heat dissipation module M includes a thermoelectric cooling element 20 and a heat conduction element 10. The thermoelectric cooling component 20 has a hot surface (not shown in the figure) and a cold surface (not shown in the figure), wherein the cold surface is provided with a thermoelectric conduction circuit, so that the thermoelectric cooling component 20 can communicate with the light emitting component 30 through the thermoelectric conduction circuit. 'Electrically connected, while the thermally conductive component 10 is in contact with the hot surface. Moreover, the material of the thermoelectric cooling element 20 disclosed in this embodiment also includes silicon and at least one transition metal element, and its electrical and physical properties have been described in detail above, so only the light-emitting device L will be described in detail below. structure.

According to the light-emitting device L shown in FIG. 2, it can be seen that the light-emitting device L is a lamp (such as a street lamp), in which the light-emitting component 30' is arranged on the cold surface of the thermoelectric cooling component 20, and the light-emitting component 30' can be already The packaged light-emitting element or the unpackaged light-emitting chip is illustrated here as an example of the packaged light-emitting element; and the electrical connection method between the light-emitting component 30' and the thermoelectric conduction circuit can be selected from flip-chip bonding, punching, etc. Wire bonding or any other electrical connection methods are acceptable, and here the flip-chip bonding method is used as an example for illustration.

It is worth noting that in the light-emitting device L disclosed in FIG. 2 , the heat-conducting component 10 is directly connected to the outer casing 50 (for example: lampshade) of the light-emitting device L as an integral structure, and when the surface of the outer casing 50 is formed with a metal layer , or even when the material of the outer shell 50 is metal, the outer shell 50 can also play the role of auxiliary heat dissipation.

In addition, the above-mentioned light-emitting device L further includes a power supply 60 and a reflector 70, wherein the power supply 60 can supply power to the light-emitting component 30', and because of different application environments, the power supply 60 is more waterproof and dustproof. and other designs, and the reflector 70 is arranged corresponding to the light-emitting component 30' and a light-transmitting lampshade (not shown), so that the light generated by the light-emitting component 30' can be emitted concentratedly. The material of the reflector 70 can be high It is made of high-purity aluminum, and in order to make the reflection effect better, the surface of the reflector 70 can be treated by anodic reaction after polishing.

Therefore, for the light-emitting device L disclosed in this embodiment, most of the heat energy generated by the light-emitting element 30' during the light-emitting process can be discharged through the thermoelectric cooling element 20 in the form of thermal dissociation, and at the same time Due to the connection relationship between the thermoelectric cooling component 20 and the heat conducting component 10, the remaining heat energy can be dissipated through heat conduction. In addition, when the entire or partial structure of the outer casing 50 is made of a material capable of dissipating heat, it is more The outer casing 50 can be used as an aid to accelerate the dissipation of heat energy, so the stability and safety of the light emitting device L can be ensured.

Certainly, although the above-mentioned description is an example of a light-emitting device, the electrical device disclosed in the present invention is not limited to a light-emitting device, but can be any common electronic device. For example, the heating components in an electrical device can be In addition to light-emitting components, it can also be electronic components with high operating frequency and high operating temperature such as central processing units and computing chips.

Based on the above, the heat dissipation module disclosed in the present invention and the electrical device applied thereto can transmit the heat energy generated by the heating element through two different heat conduction mechanisms of thermoelectric cooling and conduction at the same time, so as to ensure that the heat energy connected to the heating element The surface has a lower temperature, and most of the heat energy generated by the heat-generating component is transferred to the heat-conducting component through the hot surface in contact with the heat-conducting component, and then dissipates the heat energy through the heat-conducting component. Compared with the known technology, the utility model can use the thermoelectric cooling components made of semiconductor materials to achieve rapid and effective heat dissipation through the effect of mutual conversion between heat and electricity without providing additional power (DC power supply) Effect, so that heat-generating components can be operated in a lower temperature environment.

The above description is for illustration only, not for limitation. Any equivalent modification or change made without departing from the spirit and scope of the present utility model shall be included in the scope of the appended patent application.

Claims (25)

1. radiating module, itself and the collocation of at least one heat generating component are used, and it is characterized in that: described radiating module comprises:

One thermoelectric cooling assembly, it has a hot surface and a cold surface, and this cold surface and this heat generating component of this thermoelectric cooling assembly are electrically connected; And

One heat-conductive assembly, it contacts with this hot surface of this thermoelectric cooling assembly.

2. radiating module as claimed in claim 1 is characterized in that: described thermoelectric cooling assembly is the semiconductor thermoelectric refrigerating assembly.

3. radiating module as claimed in claim 1 is characterized in that: the breakdown voltage of described thermoelectric cooling assembly is greater than 200 volts/millimeter.

4. radiating module as claimed in claim 1 is characterized in that: the dielectric constant of described thermoelectric cooling assembly is smaller or equal to 12 pico farads.

5. radiating module as claimed in claim 1 is characterized in that: the burst current of described thermoelectric cooling assembly is greater than 15000 amperes.

6. radiating module as claimed in claim 1 is characterized in that: the thermal power of described thermoelectric cooling assembly is greater than 470.

7. radiating module as claimed in claim 1 is characterized in that: the insulating properties of described thermoelectric cooling assembly is more than or equal to 10 ⁹Ohm.

8. radiating module as claimed in claim 1 is characterized in that: the water absorption rate of described thermoelectric cooling assembly is not more than 0.02%.

9. radiating module as claimed in claim 1 is characterized in that: the density of described thermoelectric cooling assembly is more than or equal to 3.96 gram/cubic centimetres.

10. radiating module as claimed in claim 1 is characterized in that: the Mohs' hardness of described thermoelectric cooling assembly is more than or equal to 9.

11. radiating module as claimed in claim 1 is characterized in that: the surface roughness of described thermoelectric cooling assembly is between 1 to 100 nanometer.

12. radiating module as claimed in claim 1 is characterized in that: be laid with a thermoelectric order wire circuit between described thermoelectric cooling assembly and this heat generating component.

13. radiating module as claimed in claim 1 is characterized in that: described heat-conductive assembly is made by metal or alloy.

14. an electric device, it comprises at least one heat generating component, a thermoelectric order wire circuit, a radiating module, and this radiating module and the collocation of this heat generating component are used, and it is characterized in that: described radiating module comprises:

One thermoelectric cooling assembly, it has a hot surface and a cold surface, this cold surface of this thermoelectric cooling assembly is laid this thermoelectricity order wire circuit, and by this thermoelectricity order wire circuit to be electrically connected with this heat generating component; And

One heat-conductive assembly, it contacts with this hot surface of this thermoelectric cooling assembly.

15. electric device as claimed in claim 14 is characterized in that: described thermoelectric cooling assembly is the semiconductor thermoelectric refrigerating assembly.

16. electric device as claimed in claim 14 is characterized in that: the breakdown voltage of described thermoelectric cooling assembly is greater than 200 volts/millimeter.

17. electric device as claimed in claim 14 is characterized in that: the dielectric constant of described thermoelectric cooling assembly is smaller or equal to 12 pico farads.

18. electric device as claimed in claim 14 is characterized in that: the burst current of described thermoelectric cooling assembly is greater than 15000 amperes.

19. electric device as claimed in claim 14 is characterized in that: the thermal power of described thermoelectric cooling assembly is greater than 470.

20. electric device as claimed in claim 14 is characterized in that: the insulating properties of described thermoelectric cooling assembly is more than or equal to 10 ⁹Ohm.

21. electric device as claimed in claim 14 is characterized in that: the water absorption rate of described thermoelectric cooling assembly is not more than 0.02%.

22. electric device as claimed in claim 14 is characterized in that: the density of described thermoelectric cooling assembly is more than or equal to 3.96 gram/cubic centimetres.

23. electric device as claimed in claim 14 is characterized in that: the Mohs' hardness of described thermoelectric cooling assembly is more than or equal to 9.

24. electric device as claimed in claim 14 is characterized in that: the surface roughness of described thermoelectric cooling assembly is between 1 to 100 nanometer.

25. electric device as claimed in claim 14 is characterized in that: described heat-conductive assembly is made by metal or alloy.

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