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CN1929120A - Stacked chip package structure, chip package body and manufacturing method thereof - Google Patents

Stacked chip package structure, chip package body and manufacturing method thereof Download PDF

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Publication number
CN1929120A
CN1929120A CN200510102505.XA CN200510102505A CN1929120A CN 1929120 A CN1929120 A CN 1929120A CN 200510102505 A CN200510102505 A CN 200510102505A CN 1929120 A CN1929120 A CN 1929120A
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chip
those
perforation
line layer
patterned line
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CN100481420C (en
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潘玉堂
周世文
吴政庭
邱士峰
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Chipmos Technologies Inc
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Chipmos Technologies Bermuda Ltd
Chipmos Technologies Inc
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Abstract

本发明是有关于一种堆叠型芯片封装结构、芯片封装体及其制造方法。该芯片封装体,其包括一封装基板、一芯片与一封装胶体。其中,封装基板包括一核心层与配置于核心层上的一图案化线路层。核心层具有一第一贯孔与多个第二贯孔,其中第一贯孔与这些第二贯孔分别暴露出部分图案化线路层。芯片配置于第一贯孔内,并与图案化线路层电性连接。封装胶体配置于第一贯孔内,以将芯片固着于封装基板内。基于上述,本发明的芯片封装体的厚度能够变薄。此外,本发明亦提出一种堆叠型芯片封装结构与芯片封装体的制造方法。

Figure 200510102505

The present invention relates to a stacked chip packaging structure, a chip package and a manufacturing method thereof. The chip package comprises a packaging substrate, a chip and a packaging colloid. The packaging substrate comprises a core layer and a patterned circuit layer arranged on the core layer. The core layer has a first through hole and a plurality of second through holes, wherein the first through hole and the second through holes respectively expose a portion of the patterned circuit layer. The chip is arranged in the first through hole and electrically connected to the patterned circuit layer. The packaging colloid is arranged in the first through hole to fix the chip in the packaging substrate. Based on the above, the thickness of the chip package of the present invention can be thinned. In addition, the present invention also proposes a stacked chip packaging structure and a manufacturing method of the chip package.

Figure 200510102505

Description

堆叠型芯片封装结构、芯片封装体及其制造方法Stacked chip package structure, chip package body and manufacturing method thereof

技术领域technical field

本发明是有关于一种封装结构,且特别是有关于一种具有高封装积集度的堆叠型芯片封装结构。The present invention relates to a package structure, and more particularly to a stacked chip package structure with high package density.

背景技术Background technique

在现今的资讯社会中,使用者均是追求高速度、高品质、多工能性的电子产品。就产品外观而言,电子产品的设计也朝向轻、薄、短、小的趋势迈进。为了达到上述目的,许多公司在进行电路设计时,均融入系统化的概念,使得单颗芯片可以具备有多种功能,以节省配置在电子产品中的芯片数目。另外,就电子封装技术而言,为了配合轻、薄、短、小的设计趋势,亦发展出多芯片模组(multi-chip module,MCM)的封装设计概念、芯片尺寸构装(chip scale package,CSP)的封装设计概念及堆叠型多芯片封装设计的概念等。以下就分别针对几种现有习知堆叠型芯片封装结构进行说明。In today's information society, users are pursuing high-speed, high-quality, and multi-functional electronic products. In terms of product appearance, the design of electronic products is also moving towards the trend of light, thin, short and small. In order to achieve the above purpose, many companies incorporate the concept of systemization when designing circuits, so that a single chip can have multiple functions, so as to save the number of chips configured in electronic products. In addition, as far as electronic packaging technology is concerned, in order to meet the design trend of light, thin, short, and small, the packaging design concept of multi-chip module (MCM) and chip scale package (chip scale package) have also been developed. , CSP) package design concept and the concept of stacked multi-chip package design. Several existing conventional stacked chip packaging structures are described below.

请参阅图1所示,是现有习知堆叠型芯片封装结构的剖面示意图。现有习知的堆叠型芯片封装结构100包括一封装基板(package substrate)110、芯片120a、120b、一间隔物(spacer)130、多条导线140与一封装胶体(encapsulant)150。其中,芯片120a与120b配置于封装基板110上,且间隔物130配置于芯片120a与120b之间。部分导线140分别电性连接于芯片120a与封装基板110之间,而其他部分导线140则分别电性连接于芯片120b与封装基板110之间。此外,封装胶体150配置于封装基板110上,并包覆这些导线140、芯片120a与120b。Please refer to FIG. 1 , which is a schematic cross-sectional view of a conventional stacked chip packaging structure. The conventional stacked chip package structure 100 includes a package substrate 110 , chips 120 a , 120 b , a spacer 130 , a plurality of wires 140 and an encapsulant 150 . Wherein, the chips 120a and 120b are disposed on the packaging substrate 110, and the spacer 130 is disposed between the chips 120a and 120b. Some wires 140 are respectively electrically connected between the chip 120 a and the package substrate 110 , while other parts of the wires 140 are respectively electrically connected between the chip 120 b and the package substrate 110 . In addition, the encapsulant 150 is disposed on the encapsulation substrate 110 and covers the wires 140 and the chips 120a and 120b.

由于芯片120a与120b之间必须相距一定的距离,以便于进行打线制程(wire bonding process),因此现有习知堆叠型芯片封装结构100的整体厚度会因为间隔物130的厚度而无法进一步缩减。此外,现有习知堆叠型芯片封装结构100也会产生散热方面的问题。因此,为了解决上述问题,发展出另一种堆叠型芯片封装结构。Since the chips 120a and 120b must be separated by a certain distance to facilitate the wire bonding process, the overall thickness of the conventional stacked chip package structure 100 cannot be further reduced due to the thickness of the spacer 130 . In addition, the conventional stacked chip packaging structure 100 also has heat dissipation problems. Therefore, in order to solve the above problems, another stacked chip packaging structure has been developed.

请参阅图2所示,是另一现有习知堆叠型芯片封装结构的剖面示意图。现有习知的堆叠型芯片封装结构10包括一封装基板12与多个芯片封装体200a、200b,其中这些芯片封装体200a、200b堆叠于封装基板12上,并与封装基板12电性连接。每一芯片封装体200a、200b包括一封装基板210、一芯片220、多个凸块230、一底胶240与多个焊球250。芯片220与这些凸块230配置于封装基板210上,而这些凸块230配置于芯片220与封装基板210之间,且芯片220经由这些凸块电性连接至封装基板210。底胶240配置于芯片220与封装基板210之间,以包覆这些凸块230。Please refer to FIG. 2 , which is a schematic cross-sectional view of another conventional stacked chip packaging structure. The conventional stacked chip package structure 10 includes a package substrate 12 and a plurality of chip packages 200 a, 200 b, wherein the chip packages 200 a, 200 b are stacked on the package substrate 12 and electrically connected to the package substrate 12 . Each chip package 200 a , 200 b includes a package substrate 210 , a chip 220 , a plurality of bumps 230 , a primer 240 and a plurality of solder balls 250 . The chip 220 and the bumps 230 are disposed on the packaging substrate 210 , and the bumps 230 are disposed between the chip 220 and the packaging substrate 210 , and the chip 220 is electrically connected to the packaging substrate 210 through the bumps. The primer 240 is disposed between the chip 220 and the packaging substrate 210 to cover the bumps 230 .

封装基板210具有多个导电柱212与多个焊球垫214,其中这些导电柱212分别贯穿封装基板210,且这些焊球垫214分别配置于这些导电柱212上。此外,这些焊球250配置于这些焊球垫214上。值得注意的是,芯片封装体200a与200b经由焊球250彼此电性连接,而芯片封装体200b经由焊球250电性连接至封装基板12。The package substrate 210 has a plurality of conductive pillars 212 and a plurality of solder ball pads 214 , wherein the conductive pillars 212 respectively penetrate the package substrate 210 , and the solder ball pads 214 are respectively disposed on the conductive pillars 212 . In addition, the solder balls 250 are disposed on the solder ball pads 214 . It should be noted that the chip packages 200 a and 200 b are electrically connected to each other via the solder balls 250 , and the chip package 200 b is electrically connected to the package substrate 12 via the solder balls 250 .

相较于现有习知的堆叠型芯片封装结构100,此种现有习知的堆叠型芯片封装结构10虽然制程复杂度较低,但此种现有习知的堆叠型芯片封装结构10的厚度却是大于现有习知的堆叠型芯片封装结构100的厚度。Compared with the conventional stacked chip packaging structure 100, although the conventional stacked chip packaging structure 10 has lower manufacturing complexity, the conventional stacked chip packaging structure 10 The thickness is greater than that of the conventional stacked chip packaging structure 100 .

发明内容Contents of the invention

有鉴于此,本发明的目的就是在提供一种芯片封装体,其整体的厚度较薄。In view of this, the purpose of the present invention is to provide a chip package with a thinner overall thickness.

此外,本发明的再一目的就是提供一种堆叠型芯片封装结构,其具有较高的封装积集度。In addition, another object of the present invention is to provide a stacked chip packaging structure, which has a higher packaging density.

另外,本发明的又一目的就是提供一种芯片封装体的制造方法,以制造出嵌入式芯片封装体。In addition, another object of the present invention is to provide a method for manufacturing a chip package to manufacture an embedded chip package.

基于上述目的或其他目的,本发明提出一种芯片封装体,其包括一封装基板、一芯片与一封装胶体。其中,封装基板包括一核心层(core layer)与配置于核心层上的一图案化线路层。核心层具有一第一贯孔与多个第二贯孔,其中第一贯孔与这些第二贯孔分别暴露出部分图案化线路层。芯片配置于第一贯孔内,并与图案化线路层电性连接。封装胶体配置于第一贯孔内,以将芯片固着于封装基板内。Based on the above purpose or other purposes, the present invention provides a chip package, which includes a package substrate, a chip and a package compound. Wherein, the packaging substrate includes a core layer and a patterned circuit layer disposed on the core layer. The core layer has a first through hole and a plurality of second through holes, wherein the first through hole and the second through holes respectively expose part of the patterned circuit layer. The chip is arranged in the first through hole and is electrically connected with the patterned circuit layer. The encapsulant is disposed in the first through hole to fix the chip in the encapsulation substrate.

依照本发明实施例,芯片封装体更可以包括多个外部连接端子(external terminal),其分别配置于这些第二贯孔内,且每一外部连接端子经由图案化线路层电性连接至芯片。According to an embodiment of the present invention, the chip package may further include a plurality of external connection terminals (external terminals), which are respectively disposed in the second through holes, and each external connection terminal is electrically connected to the chip through the patterned circuit layer.

依照本发明实施例,芯片封装体更可以包括多个凸块,其配置于芯片与图案化线路层之间,而芯片经由这些凸块电性连接至图案化线路层,且封装胶体包覆这些凸块。此外,封装胶体可以是暴露出芯片的远离图案化线路层的表面。According to an embodiment of the present invention, the chip package may further include a plurality of bumps disposed between the chip and the patterned circuit layer, and the chip is electrically connected to the patterned circuit layer through these bumps, and the encapsulant covers these bump. In addition, the encapsulant may expose the surface of the chip away from the patterned circuit layer.

依照本发明实施例,芯片封装体更可以包括多条导线,其中芯片经由这些导线电性连接至图案化线路层,且封装胶体包覆这些导线。According to an embodiment of the present invention, the chip package may further include a plurality of wires, wherein the chip is electrically connected to the patterned circuit layer through the wires, and the encapsulant covers the wires.

基于上述目的或其他目的,本发明提出一种堆叠型芯片封装结构,其包括一共同承载器与多个芯片封装体,其中这些芯片封装体堆叠于共同承载器上,并与共同承载器电性连接。每一芯片封装体包括一封装基板、一芯片与一封装胶体。其中,封装基板包括一核心层与配置于核心层上的一图案化线路层。核心层具有一第一贯孔与多个第二贯孔,其中第一贯孔与这些第二贯孔分别暴露出部分图案化线路层。芯片配置于第一贯孔内,并与图案化线路层电性连接。封装胶体配置于第一贯孔内,以将芯片固着于封装基板内。这些外部连接端子分别配置于这些第二贯孔内,且每一外部连接端子经由图案化线路层电性连接至芯片。每一芯片封装体经由对应的这些外部连接端子电性连接至共同承载器或另一芯片封装体。Based on the above purpose or other purposes, the present invention proposes a stacked chip package structure, which includes a common carrier and a plurality of chip packages, wherein these chip packages are stacked on the common carrier and are electrically connected to the common carrier. connect. Each chip package includes a package substrate, a chip and a package glue. Wherein, the packaging substrate includes a core layer and a patterned circuit layer arranged on the core layer. The core layer has a first through hole and a plurality of second through holes, wherein the first through hole and the second through holes respectively expose part of the patterned circuit layer. The chip is arranged in the first through hole and is electrically connected with the patterned circuit layer. The encapsulant is disposed in the first through hole to fix the chip in the encapsulation substrate. The external connection terminals are respectively disposed in the second through holes, and each external connection terminal is electrically connected to the chip through the patterned circuit layer. Each chip package is electrically connected to the common carrier or another chip package via the corresponding external connection terminals.

依照本发明实施例,共同承载器可以是电路板或导线架。According to an embodiment of the present invention, the common carrier may be a circuit board or a lead frame.

基于上述目的或其他目的,本发明提出一种芯片封装体的制造方法,其包括下列步骤。首先,提供一芯片与一封装基板,其中封装基板包括一核心层与配置于核心层上的一图案化线路层,而在核心层内已形成一第一贯孔与多个第二贯孔,且第一贯孔与这些第二贯孔分别暴露出部分图案化线路层。将芯片配置于第一贯孔内,以使芯片与图案化线路层电性连接。在第一贯孔内形成一封装胶体,以将芯片固着于封装基板内。Based on the above purpose or other purposes, the present invention proposes a method for manufacturing a chip package, which includes the following steps. First, a chip and a packaging substrate are provided, wherein the packaging substrate includes a core layer and a patterned circuit layer disposed on the core layer, and a first through hole and a plurality of second through holes have been formed in the core layer, And the first through hole and the second through holes respectively expose part of the patterned circuit layer. The chip is arranged in the first through hole, so that the chip is electrically connected with the patterned circuit layer. An encapsulation compound is formed in the first through hole to fix the chip in the encapsulation substrate.

依照本发明实施例,芯片封装体的制造方法更可以在这些第二贯孔内形成多个外部连接端子,且每一外部连接端子经由图案化线路层电性连接至芯片。According to the embodiment of the present invention, the manufacturing method of the chip package can further form a plurality of external connection terminals in the second through holes, and each external connection terminal is electrically connected to the chip through the patterned circuit layer.

依照本发明实施例,芯片封装体的制造方法更可以在芯片与图案化线路层之间形成多个凸块,且芯片经由这些凸块电性连接至图案化线路层。According to the embodiment of the present invention, the manufacturing method of the chip package can further form a plurality of bumps between the chip and the patterned circuit layer, and the chip is electrically connected to the patterned circuit layer through these bumps.

依照本发明实施例,芯片封装体的制造方法更可以形成多条导线,且这些导线连接芯片与图案化线路层之间。According to the embodiment of the present invention, the manufacturing method of the chip package can further form a plurality of wires, and these wires are connected between the chip and the patterned circuit layer.

基于上述,本发明将芯片嵌入封装基板的核心层内,因此所形成的堆叠型芯片封装结构或是芯片封装体的厚度均可变薄。Based on the above, the present invention embeds the chip into the core layer of the package substrate, so that the formed stacked chip package structure or chip package can be thinned.

为让本发明的上述和其他目的、特征和优点能更明显易懂,下文特举较佳实施例,并配合所附图式,作详细说明如下。In order to make the above and other objects, features and advantages of the present invention more comprehensible, preferred embodiments will be described in detail below together with the accompanying drawings.

附图说明Description of drawings

图1是现有习知堆叠型芯片封装结构的剖面示意图。FIG. 1 is a schematic cross-sectional view of a conventional stacked chip packaging structure.

图2是另一现有习知堆叠型芯片封装结构的剖面示意图。FIG. 2 is a schematic cross-sectional view of another conventional stacked chip packaging structure.

图3A至图3E是依照本发明第一实施例的堆叠型芯片封装结构的制造流程剖面示意图。3A to 3E are schematic cross-sectional views of the manufacturing process of the stacked chip packaging structure according to the first embodiment of the present invention.

图4A至图4B是依照本发明第二实施例的堆叠型芯片封装结构的制造流程剖面示意图。4A to 4B are schematic cross-sectional views of the manufacturing process of the stacked chip packaging structure according to the second embodiment of the present invention.

图5是依照本发明第三实施例的芯片封装结构的剖面示意图。5 is a schematic cross-sectional view of a chip packaging structure according to a third embodiment of the present invention.

10、100:现有习知的堆叠型芯片封装结构10, 100: Existing known stacked chip packaging structure

12、110、210、310:封装基板12, 110, 210, 310: package substrate

20、30:堆叠型芯片封装结构20, 30: Stacked chip packaging structure

22、32:共用承载器22, 32: shared carrier

22a、22b、214、360:焊球垫22a, 22b, 214, 360: Solder ball pads

24、250、370:焊球24, 250, 370: solder balls

120a、120b、220、320、410:芯片120a, 120b, 220, 320, 410: chips

130:间隔物130: spacer

140、420:导线140, 420: wire

150、340、430:封装胶体150, 340, 430: encapsulation colloid

200a、200b、300a、300b、300c、400a、400b、400c、500a:芯片封装体200a, 200b, 300a, 300b, 300c, 400a, 400b, 400c, 500a: chip package

212、350:导电柱212, 350: Conductive column

230、330:凸块230, 330: bump

240:底胶240: primer

312:核心层312: core layer

312a:第一贯孔312a: first through hole

312b:第二贯孔312b: second through hole

314:图案化线路层314: Patterned circuit layer

316:焊罩层316: Solder mask layer

440:外部连接端子440: External connection terminal

510:粘着层510: Adhesive layer

具体实施方式Detailed ways

【第一实施例】【The first embodiment】

图3A至图3E是依照本发明第一实施例的堆叠型芯片封装结构的制造流程剖面示意图。请参阅图3A,本实施例的堆叠型芯片封装结构的制造方法包括下列步骤。首先,提供一封装基板310,而封装基板310可以是电路板或是软性电路板。此外,封装基板310包括一核心层312与配置于核心层312上的一图案化线路层314,其中核心层312可以是双顺丁烯二酸酰亚胺-三氮杂苯(Bismaleimide-Triazine, BT)材料、介电材料或其他薄膜材料。另外,封装基板310也可以包括一焊罩层316,而焊罩层316配置于核心层312上,并覆盖部分图案化线路层314。3A to 3E are schematic cross-sectional views of the manufacturing process of the stacked chip packaging structure according to the first embodiment of the present invention. Please refer to FIG. 3A , the manufacturing method of the stacked chip packaging structure of this embodiment includes the following steps. Firstly, a packaging substrate 310 is provided, and the packaging substrate 310 can be a circuit board or a flexible circuit board. In addition, the packaging substrate 310 includes a core layer 312 and a patterned circuit layer 314 disposed on the core layer 312, wherein the core layer 312 may be Bismaleimide-Triazine (Bismaleimide-Triazine, BT ) materials, dielectric materials or other thin film materials. In addition, the package substrate 310 may also include a solder mask layer 316 , and the solder mask layer 316 is disposed on the core layer 312 and covers part of the patterned circuit layer 314 .

然后,在核心层312内形成一第一贯孔312a与多个第二贯孔312b,且第一贯孔312a与这些第二贯孔312b分别暴露出部分图案化线路层314。此外,形成第一贯孔312a与第二贯孔312b的方法可以是雷射钻孔、机械钻孔或是其他能够形成贯孔的制程。Then, a first through hole 312 a and a plurality of second through holes 312 b are formed in the core layer 312 , and the first through hole 312 a and the second through holes 312 b respectively expose part of the patterned circuit layer 314 . In addition, the method of forming the first through hole 312a and the second through hole 312b may be laser drilling, mechanical drilling or other processes capable of forming through holes.

请参阅图3B所示,提供一芯片320,并将芯片320配置于第一贯孔312a内。然后,将芯片320与图案化线路层314电性连接,其中芯片320与图案化线路层314电性连接的方式可以是覆晶接合技术。就覆晶接合技术而言,芯片320系藉由凸块330与图案化线路层314电性连接。在本实施例中,凸块330可以是形成在图案化线路层314上或是形成在芯片320上,然后再经过回焊(reflow)以使得芯片320能够藉由凸块330与图案化线路层314电性连接。Referring to FIG. 3B , a chip 320 is provided, and the chip 320 is disposed in the first through hole 312 a. Then, the chip 320 is electrically connected to the patterned circuit layer 314 , wherein the chip 320 is electrically connected to the patterned circuit layer 314 by flip-chip bonding technology. For the flip-chip bonding technology, the chip 320 is electrically connected to the patterned circuit layer 314 through the bump 330 . In this embodiment, the bumps 330 may be formed on the patterned circuit layer 314 or on the chip 320, and then undergo reflow so that the chip 320 can be connected to the patterned circuit layer by the bumps 330. 314 is electrically connected.

请参阅图3C所示,在第一贯孔312a内形成一封装胶体340,以将芯片320固着于封装基板310内。在本发明的一实施例中,封装胶体340系包覆凸块330与部分图案化线路层314。至此,初步完成芯片封装体300a的制作。值得一提的是,本实施例的封装胶体340可暴露出芯片320的远离图案化线路层314的表面,以改善芯片320的散热效率。换言之,封装胶体340暴露出芯片320的背面,然而封装胶体340也可以是完全包覆芯片320。此外,封装胶体340与封装基板310也可以是切齐,然而封装胶体340也可以是突出于封装基板310。Referring to FIG. 3C , an encapsulant 340 is formed in the first through hole 312 a to fix the chip 320 in the encapsulation substrate 310 . In an embodiment of the present invention, the encapsulant 340 covers the bump 330 and part of the patterned circuit layer 314 . So far, the fabrication of the chip package 300a is preliminarily completed. It is worth mentioning that the encapsulant 340 of this embodiment can expose the surface of the chip 320 away from the patterned circuit layer 314 to improve the heat dissipation efficiency of the chip 320 . In other words, the encapsulant 340 exposes the backside of the chip 320 , but the encapsulant 340 can also completely cover the chip 320 . In addition, the encapsulant 340 and the encapsulation substrate 310 can also be aligned, but the encapsulant 340 can also protrude from the encapsulation substrate 310 .

请参阅图3D所示,在这些第二贯孔312b内形成多个导电柱350,以作为外部连接端子之用,且每一导电柱350经由图案化线路层314电性连接至芯片320。更详细而言,形成这些导电柱350的方式也可以是无电电镀制程、有电电镀制程或是其他金属沈积制程。然而,也可以是将无铅焊料、锡铅焊料、其他类型的焊料或其他导电材质填入这些第二贯孔312b内,以形成外部连接端子(如图4A所示)。就导电柱350作为外部连接端子而言,在这些导电柱350上形成多个焊球垫360。然后,在这些焊球垫360上形成多个焊球370,而这些焊球370可以是无铅焊球或是锡铅焊球。至此,大致完成芯片封装体300a的制作。Referring to FIG. 3D , a plurality of conductive pillars 350 are formed in the second through holes 312 b to be used as external connection terminals, and each conductive pillar 350 is electrically connected to the chip 320 through the patterned circuit layer 314 . In more detail, the method of forming the conductive pillars 350 may also be an electroless plating process, an electroplating process or other metal deposition processes. However, lead-free solder, tin-lead solder, other types of solder or other conductive materials may also be filled into the second through holes 312b to form external connection terminals (as shown in FIG. 4A ). As far as the conductive pillars 350 are used as external connection terminals, a plurality of solder ball pads 360 are formed on these conductive pillars 350 . Then, a plurality of solder balls 370 are formed on the solder ball pads 360 , and the solder balls 370 may be lead-free solder balls or tin-lead solder balls. So far, the fabrication of the chip package 300a is roughly completed.

请参阅图3E所示,重复上述的步骤,以制造出芯片封装体300b与300c。然后,提供一共用承载器22,而共用承载器22具有多个焊球垫22a与22b。在本实施例中,共用承载器22为电路板,但是共用承载器22也可以是导线架。然后,将芯片封装体300a、300b与300c堆叠于共用承载器22上,其中这些芯片封装体300a、300b与300c的焊球370与对应的焊球垫360接触。此外,芯片封装体300c的焊球370与共用承载器22的焊球垫22a接触。然后,对于上述结构进行回焊制程(reflow process),以使得这些芯片封装体300a、300b与300c彼此电性,并使得芯片封装体300c与共用承载器22连接。Referring to FIG. 3E , the above steps are repeated to manufacture chip packages 300b and 300c. Then, a common carrier 22 is provided, and the common carrier 22 has a plurality of solder ball pads 22a and 22b. In this embodiment, the common carrier 22 is a circuit board, but the common carrier 22 may also be a lead frame. Then, the chip packages 300 a , 300 b and 300 c are stacked on the common carrier 22 , wherein the solder balls 370 of the chip packages 300 a , 300 b and 300 c are in contact with the corresponding solder ball pads 360 . In addition, the solder balls 370 of the chip package 300 c are in contact with the solder ball pads 22 a of the common carrier 22 . Then, a reflow process is performed on the above structure, so that the chip packages 300 a , 300 b and 300 c are electrically connected to each other, and the chip package 300 c is connected to the common carrier 22 .

值得一提的是,这些芯片封装体300a、300b与300c并不限定图3E所绘示的排列方式,而这些芯片封装体300a、300b或300c也可以翻转180度。以芯片封装体300b翻转180度而言,此时,芯片封装体300b与300c的图案化线路层314将面向彼此(类似图4B所示)。It is worth mentioning that the chip packages 300a, 300b, and 300c are not limited to the arrangement shown in FIG. 3E , and the chip packages 300a, 300b, or 300c can also be flipped 180 degrees. If the chip package 300b is turned 180 degrees, at this time, the patterned circuit layers 314 of the chip packages 300b and 300c will face each other (similar to that shown in FIG. 4B ).

然后,在共用承载器22的焊球垫22b上形成多个焊球24,以完成堆叠型芯片封装结构20的制作。此堆叠型芯片封装结构20便可以藉由焊球24配置于一电路板(图中未示)上。值得一提的是,本实施例并不限制堆叠型芯片封装结构20内的芯片封装体的排列方式与数量。Then, a plurality of solder balls 24 are formed on the solder ball pads 22 b of the common carrier 22 to complete the fabrication of the stacked chip package structure 20 . The stacked chip package structure 20 can be disposed on a circuit board (not shown in the figure) through solder balls 24 . It is worth mentioning that the present embodiment does not limit the arrangement and quantity of the chip packages in the stacked chip package structure 20 .

由于每一个芯片封装体300a、300b与300c的芯片320系嵌入核心层312内,因此每一个芯片封装体300a、300b与300c的厚度便可变薄。换言之,堆叠型芯片封装结构20的整体厚度也随着变薄。此外,由于每一个芯片封装体300a、300b与300c均是单独制造而成,因此不良品的芯片封装体不会使用至堆叠型芯片封装结构20内,以提高堆叠型芯片封装结构20的良率。另外,每一个芯片封装体300a、300b与300c的芯片320的背面均是裸露,因此堆叠型芯片封装结构20能够具有较佳的散热效率。Since the chip 320 of each chip package 300a, 300b and 300c is embedded in the core layer 312, the thickness of each chip package 300a, 300b and 300c can be reduced. In other words, the overall thickness of the stacked chip packaging structure 20 also becomes thinner. In addition, since each chip package 300a, 300b, and 300c is manufactured separately, defective chip packages will not be used in the stacked chip package structure 20, so as to improve the yield of the stacked chip package structure 20. . In addition, the backside of the chip 320 of each chip package 300a, 300b, and 300c is exposed, so the stacked chip package structure 20 can have better heat dissipation efficiency.

值得一提的是,在本实施例中,芯片封装体300a、300b与300c均是覆晶接合封装体,但是也可以使用打线接合封装体,其详述如后。It is worth mentioning that in this embodiment, the chip packages 300 a , 300 b and 300 c are all flip-chip bonded packages, but wire bonded packages can also be used, which will be described in detail later.

【第二实施例】【Second Embodiment】

图4A至图4B是依照本发明第二实施例的堆叠型芯片封装结构的制造流程剖面示意图。请参阅图4A,本实施例与上述实施例相似,其不同之处在于:将芯片410置于第一贯孔310a内的后,形成多条导线420,以连接图案化线路层314与芯片410之间。同样地,在第一贯孔312a内形成一封装胶体430,以将芯片410固着于封装基板310内,且封装胶体430包覆芯片410、导线420与部分图案化线路层314。至此,初步完成芯片封装体400a的制作。4A to 4B are schematic cross-sectional views of the manufacturing process of the stacked chip packaging structure according to the second embodiment of the present invention. Please refer to FIG. 4A , this embodiment is similar to the above-mentioned embodiment, the difference is that after the chip 410 is placed in the first through hole 310a, a plurality of wires 420 are formed to connect the patterned circuit layer 314 and the chip 410 between. Similarly, an encapsulant 430 is formed in the first through hole 312 a to fix the chip 410 in the package substrate 310 , and the encapsulant 430 covers the chip 410 , the wire 420 and part of the patterned circuit layer 314 . So far, the fabrication of the chip package 400a is preliminarily completed.

值得一提的是,在本实施例中,封装胶体430突出于封装基板310,然而封装胶体430与封装基板310也可以是切齐。然后,将无铅焊料、锡铅焊料、其他类型的焊料或是其他导电材料填入这些第一贯孔312b内,以形成多个外部连接端子440。然而,上述实施例中的导电柱350也可以取代本实施例的外部连接端子440。It is worth mentioning that, in this embodiment, the encapsulant 430 protrudes from the packaging substrate 310 , however, the encapsulant 430 and the encapsulation substrate 310 may also be aligned. Then, lead-free solder, tin-lead solder, other types of solder or other conductive materials are filled into the first through holes 312b to form a plurality of external connection terminals 440 . However, the conductive posts 350 in the above embodiments can also replace the external connection terminals 440 in this embodiment.

请参阅图4B所示,重复上述步骤,以形成芯片封装体400b与400c。提供一共同承载器32,而在本实施例中,共同承载器32为导线架,但是共同承载器32也可以是电路板(类似图3E所示)。将这些芯片封装体400a、400b与400c堆叠于共同承载器32上,且这些芯片封装体400a、400b与400c藉由外部连接端子440彼此电性连接。此外,芯片封装体400c藉由外部连接端子440电性连接至共同承载器32。同样地,此堆叠型芯片封装结构30也可以藉由焊料(solder)或预焊料(pre-solder)配置于一电路板(图中未示)上。Referring to FIG. 4B , the above steps are repeated to form chip packages 400b and 400c. A common carrier 32 is provided, and in this embodiment, the common carrier 32 is a lead frame, but the common carrier 32 can also be a circuit board (similar to that shown in FIG. 3E ). These chip packages 400 a , 400 b and 400 c are stacked on the common carrier 32 , and these chip packages 400 a , 400 b and 400 c are electrically connected to each other through external connection terminals 440 . In addition, the chip package 400c is electrically connected to the common carrier 32 through the external connection terminal 440 . Likewise, the stacked chip package structure 30 can also be configured on a circuit board (not shown) by solder or pre-solder.

值得一提的是,虽然芯片封装体400a与400b的图案化线路层314是面向彼此,但本实施例并不限制堆叠型芯片封装结构30内的芯片封装体的排列方式与数量。It is worth mentioning that although the patterned circuit layers 314 of the chip packages 400 a and 400 b face each other, the present embodiment does not limit the arrangement and quantity of the chip packages in the stacked chip package structure 30 .

【第三实施例】[Third embodiment]

请参阅图5所示,是依照本发明第三实施例的芯片封装结构的剖面示意图。本实施例与第一实施例相似,其不同之处在于:将芯片320的部分区域上或图案化线路层314上形成一粘着层510,并使得芯片320与图案化线路层314接合。然后,进行一引脚压合制程,以使得图案化线路层314与凸块330接合,因此图案化线路层314能够经由凸块330与芯片320。更详细而言,引脚压合制程可以是用于贴带自动接合(Tape AutomaticBonding,TAB)的内引脚接合(inner lead bonding,ILB)制程。Please refer to FIG. 5 , which is a schematic cross-sectional view of a chip package structure according to a third embodiment of the present invention. This embodiment is similar to the first embodiment, except that: an adhesive layer 510 is formed on a part of the chip 320 or on the patterned circuit layer 314 , and the chip 320 is bonded to the patterned circuit layer 314 . Then, a pin bonding process is performed to bond the patterned circuit layer 314 to the bump 330 , so that the patterned circuit layer 314 can be connected to the chip 320 via the bump 330 . In more detail, the pin bonding process may be an inner lead bonding (ILB) process for Tape Automatic Bonding (TAB).

然后,在第一贯孔312a内形成一封装胶体340,以将芯片320固着于封装基板310内,且封装胶体340包覆芯片320、凸块330与部分图案化线路层314。至此,初步完成芯片封装体500a的制作。值得一提的是,在本实施例中,封装胶体340完全包覆芯片320,但是封装胶体340也可以暴露出芯片320的背面。再者,本实施例的芯片封装体500a也可以用于第一实施例或第二实施例的堆叠型芯片封装结构中,在此不再赘述。Then, an encapsulant 340 is formed in the first through hole 312 a to fix the chip 320 in the package substrate 310 , and the encapsulant 340 covers the chip 320 , the bump 330 and part of the patterned circuit layer 314 . So far, the fabrication of the chip package 500a is preliminarily completed. It is worth mentioning that, in this embodiment, the encapsulant 340 completely covers the chip 320 , but the encapsulant 340 can also expose the backside of the chip 320 . Furthermore, the chip package 500a of this embodiment can also be used in the stacked chip package structure of the first embodiment or the second embodiment, and details will not be repeated here.

综上所述,本发明至少具有下列优点:In summary, the present invention has at least the following advantages:

一、由于本发明将芯片嵌入封装基板的核心层内,因此本发明的堆叠型芯片封装结构或是芯片封装体的厚度能够变薄。1. Since the chip is embedded in the core layer of the packaging substrate in the present invention, the thickness of the stacked chip packaging structure or the chip package of the present invention can be reduced.

二、本发明的堆叠型芯片封装结构或是芯片封装体能应用于覆晶接合制程或是打线接合制程。2. The stacked chip package structure or chip package body of the present invention can be applied to a flip chip bonding process or a wire bonding process.

三、相较于现有习知技术,本发明的堆叠型芯片封装结构或是芯片封装体具有较佳的散热效率。3. Compared with the prior art, the stacked chip package structure or chip package of the present invention has better heat dissipation efficiency.

虽然本发明已以较佳实施例揭露如上,然其并非用以限定本发明,任何熟习此技艺者,在不脱离本发明的精神和范围内,当可作些许的更动与润饰,因此本发明的保护范围当视后权利要求所界定为准。Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Anyone skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, this The scope of protection of the invention shall prevail as defined by the following claims.

Claims (10)

1. chip packing-body is characterized in that it comprises:
One base plate for packaging comprises a core layer and is configured in a patterned line layer on this core layer that wherein this core layer has one first perforation and a plurality of second perforation, and this first perforation and those second perforations expose partly this patterned line layer respectively;
One chip is configured in this first perforation, and electrically connects with this patterned line layer; And
One packing colloid is configured in this first perforation, so that this chip is anchored in this base plate for packaging.
2. chip packing-body according to claim 1 is characterized in that it more comprises a plurality of external connection terminals, be configured in respectively in those second perforations, and each those external connection terminals is electrically connected to this chip via this patterned line layer.
3. chip packing-body according to claim 1, it is characterized in that it more comprises a plurality of projections, be configured between this chip and this patterned line layer, and this chip is electrically connected to this patterned line layer via those projections, and this packing colloid coats those projections.
4. chip packing-body according to claim 1 is characterized in that it more comprises many leads, and wherein this chip is electrically connected to this patterned line layer via those leads, and this packing colloid coats those leads.
5. stack chip packaging structure is characterized in that it comprises:
One common carrier;
A plurality of chip packing-bodies are stacked on this common carrier, and electrically connect with this common carrier, and each those chip packing-body comprises:
One base plate for packaging comprises a core layer and is configured in a patterned line layer on this core layer that wherein this core layer has one first perforation and a plurality of second perforation, and this first perforation and those second perforations expose partly this patterned line layer respectively;
One chip is configured in this first perforation, and electrically connects with this patterned line layer;
One packing colloid is configured in this first perforation, so that this chip is anchored in this base plate for packaging; And
A plurality of external connection terminals, be configured in respectively in those second perforations, and each those external connection terminals is electrically connected to this chip via this patterned line layer, and each those chip packing-body is electrically connected to this common carrier or another those chip packing-bodies via those external connection terminals of correspondence.
6. stack chip packaging structure according to claim 5 is characterized in that wherein said common carrier comprises circuit board or lead frame.
7. the manufacture method of a chip packing-body is characterized in that it comprises:
One chip and a base plate for packaging are provided, wherein this base plate for packaging comprises a core layer and a patterned line layer that is configured on this core layer, and formed one first perforation and a plurality of second perforation in this core layer, and this first perforation and those second perforations expose this patterned line layer of part respectively;
With this chip configuration in this first perforation, so that this chip and this patterned line layer electrically connect; And
In this first perforation, form a packing colloid, so that this chip is anchored in this base plate for packaging.
8. the manufacture method of chip packing-body according to claim 7 it is characterized in that it more is included in a plurality of external connection terminals of formation in those second perforations, and each those external connection terminals is electrically connected to this chip via this patterned line layer.
9. the manufacture method of chip packing-body according to claim 7 it is characterized in that it more is included in a plurality of projections of formation between this chip and this patterned line layer, and this chip is electrically connected to this patterned line layer via those projections.
10. the manufacture method of chip packing-body according to claim 7 it is characterized in that it more comprises many leads of formation, and those leads connects between this chip and this patterned line layer.
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CN1183588C (en) * 2002-01-15 2005-01-05 威盛电子股份有限公司 Ball grid array package substrate and manufacturing method thereof
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US8093703B2 (en) 2007-08-10 2012-01-10 Samsung Electronics Co., Ltd. Semiconductor package having buried post in encapsulant and method of manufacturing the same
US8846446B2 (en) 2007-08-10 2014-09-30 Samsung Electronics Co., Ltd. Semiconductor package having buried post in encapsulant and method of manufacturing the same
CN102693965A (en) * 2011-03-24 2012-09-26 南茂科技股份有限公司 Package-on-package structure
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